Monte Carlo study of interfacial silicon suboxide layers and oxidation kinetics

A simple simulation scheme that simultaneously describes the growth kinetics of SiO₂ films at the nanometer scale and the SiO_x/Si interface dynamics (its extent, and spatial/temporal evolution) is presented. The simulation successfully applies to experimental data in the region above and below 10 nm, reproduces the Deal and Grove linear-parabolic law and the oxide growth rate enhancement in the very thin film regime (the so-called anomalous region). According to the simulation, the oxidation is governed mainly by two processes: (a) the formation of a transition suboxide layer and (b) its subsequent drift towards the silicon bulk. We found that it is the superposition of these two processes that produces the crossover from the anomalous oxidation region behavior to the linear-parabolic law.     

Metastability in the Potts model on the Cayley tree

Metastability in the ferromagneticp-state Potts model defined on the Cayley tree is discussed. It is shown that the sign of the boundary fieldH _s determines the order of the transition as well as the stability of the low-temperature phase. Lowering the temperature withH _s >0, a system withp<2 (p>2) will display a second (first)-order transition to a metastable (stable) phase. ForH _s >0 a second (first)-order transition to a metastable (stable) phase occurs ifp>2 (p<2). In this case the system also has a residual entropy which is negative forp<2.     

Modification of the surface state of rough substrates by two different varnishes and influence on the reflected light

Modification of the visual appearance when a rough surface is covered by a varnish is mostly attributed to the levelling of the substrate surface, which depends on the molecular weight of the varnish. The topography of varnished surfaces, however, has never been measured directly. Surfaces of varnishes applied over glass substrates of varying roughness were studied, therefore, using mechanical profilometry. Two different varnishes made with a low and a high molecular weight resin were studied. Both varnishes lower the r.m.s. roughness of the substrates and filter the high spatial frequencies. These results are amplified for the varnish containing the low molecular weight resin. The light reflected by the varnished samples is modelled from these topographical data. Its angular distribution, calculated from the probability density of slopes is presented, taking into account separately the air/varnish and the varnish/substrate interfaces. These analyses are presented in a back-scattering configuration. They show that varnishing significantly reduces the angular width of the reflected light and that this effect is magnified for the low molecular weight resin. Modelling furthermore shows that the influence of the roughness of the varnish/substrate interface is negligible in the total reflected light.     

3D-TOFSIMS characterization of black spots in polymer light emitting diodes

The occurrence and formation of black spots areas in PolyLED devices has been studied by time-of-flight SIMS (TOFSIMS). The composition, shape and position of the black spots is visualised by three-dimensional (3D)-TOFSIMS depth-profiling. It has been established that the formation of non-emissive spots is due to the growth of aluminium oxide clusters at the AlBa/polymer interface. Electron injection in the black spots is lost by the resulting local increase of the resistivity of the cathode.     

Studies aimed at the synthesis of morphine V an economic approach to (±)-reticuline from 3,4-dihydropapaverine

Regioselective demethylation of 3,4-dihydropapaveraldine ($\text{2}$a) at 7 and 3' positions affords a properly substituted diphenolic key intermidiate ($\text{2}$d) for the synthesis of reticuline and N-norreticuline.     

2-fold and 3-fold mixing: why 3-dot-type counterexamples are impossible in one dimension

V.A. Rohlin asked in 1949 whether 2-fold mixing implies 3-fold mixing for a stationary process (ξ_i )_i2ℤ, and the question remains open today. In 1978, F. Ledrappier exhibited a counterexample to the 2-fold mixing implies 3-fold mixing problem, the socalled 3-dot system, but in the context of stationary random fields indexed by ℤ². In this work, we first present an attempt to adapt Ledrappier's construction to the onedimensional case, which finally leads to a stationary process which is 2-fold but not 3-fold mixing conditionally to the σ-algebra generated by some factor process. Then, using arguments coming from the theory of joinings, we will give some strong obstacles proving that Ledrappier's counterexample can not be fully adapted to one-dimensional stationary processes.     

The Henderson Approximation and the Mass Action Law of Guldberg and Waage

Using contemporary accounts, we describe the scope of the Henderson approximation, and its relationship to the mass action law of Guldberg & Waage. The Henderson approximation, apparently written in logarithmic form by Hasselbalch, has the same form as the mass action law, but has a completely different meaning and a much more restricted range of applicability. The Guldberg-Waage law is the fundamental mass action relationship valid for all chemical equilibria, whereas the Henderson approximation is useful only within a limited range of a sufficiently concentrated two-component buffer mixture.     

Rietveld refinement of CdSe phases annealed under argon atmosphere

Hexagonal and cubic cadmium selenide were prepared from a chemical route by using cadmium chloride and potassium selenium hydride obtained from reaction of selenium powder and potassium boron hydride. The product obtained was thermally treated under argon flux at 300, 500 and 600 °C for 2 h and characterized by X-ray photoelectron spectroscopy and X-ray diffraction. The X-ray diffraction data were refined by Rietveld method and the structural parameters were determined for the phases of each annealed samples. At 300 °C five phases were identified: Cubic and hexagonal cadmium selenides and the contaminants: Potassium chloride, boron oxide and cadmium boron oxide. At 500 and 600 °C only the hexagonal cadmium selenide phase was identified besides the other above mentioned contaminant.