Measurement of internal stresses via the polarization in epitaxial ferroelectric films

The relations between electrical and mechanical properties of constrained ferroelectric films are analyzed. It is shown that the internal stresses and the elastic constants can be determined through the measurement of the electrical response. The change in the polarization is proportional to internal stresses due to film-substrate misfit, whereas the linear electrical and electromechanical responses to external field do not depend on the misfit and are determined by the film constraint. The theoretical results are successfully applied to PbZr 0.2Ti 0.8O (3) films on (001) LaAlO (3) substrate which exhibit a considerable increase in the saturation polarization due to epitaxial stresses. Significant recovery in the piezoelectric constant and susceptibility is theoretically predicted and experimentally verified for specific film configurations which reduce the degree of constraint. The concept presented in this Letter can be expanded to constrained ferromagnetic and superconductor films.     

On Riesz spaces with b-property and strongly order bounded operators

A Riesz space E is said to have the b-property if each subset that is order bounded in the bidual remains to be order bounded in E. Properties of a Riesz space with the b-property, the relationship between the b-property and various classes of operators are studied.     

Boundary interpolation in the ball

We solve a boundary interpolation problem in the reproducing kernel Hilbert space of functions analytic in the unit ball of with reproducing kernel 1/(1−∑₁^Nz_kw_k^*). We introduce the notion of Brune factor (or Blaschke–Potapov factor of the third kind) in this setting.     

Self-injection length in La0.7Ca0.3MnO3-YBa2Cu3O7-δ ferromagnet-superconductor multilayer thin films

We have carried out extensive studies on the self-injection problem in barrierless heterojunctions between La_0.7Ca_0.3MnO₃ (LCMO) and YBa₂Cu₃O_7-δ (YBCO) thin films. The heterojunctions were formed in situ by sequentially growing LCMO and YBCO films on 〈100〉 LaAlO₃ (LAO) substrate using a pulsed laser deposition (PLD) system. YBCO micro-bridges with 64 μm width were patterned both on the LAO (control) and LCMO side of the substrate. Critical current, I _c, was measured at 77 K on both the control side as well as the LCMO side for different YBCO film thickness. It was observed that while the control side showed a J _c of ∼ 2 × 10⁶ A/cm², the LCMO side showed about half the value for the same thickness (1800 ?). The difference in J _c indicates that a certain thickness of YBCO has become ‘effectively’ normal due to self-injection. From the measurement of J _c at two different thicknesses (1800 ? and 1500 ?) of YBCO films both on the LAO as well as the LCMO side, the value of self-injection length (at 77 K) was estimated to be ∼ 900 ?. To the authors’ best knowledge, this is the first time that self-injection length has been quantified. A control experiment carried out with LaNiO₃ deposited by PLD on YBCO did not show any evidence of self-injection.     

A remark on CD 0(K)-spaces

A representation of the CD ₀(K)-space is given in [1, 2] for a compact Hausdorff space K without isolated points. We generalize this to an arbitrary countably compact space K without any assumption on isolated points.     

Fonctions rationnelles et problème de Gleason associés à l'opérateur de Dirac

We define developments in terms of homogeneous polynomials for regular functions (that is, in the kernel of the Dirac operator) and obtain new developments for hyperholomorphic functions (that is, in the kernel of the Cauchy–Fueter operator). Rational functions associated to the Dirac operator are also studied. To cite this article: D. Alpay et al., C. R. Acad. Sci. Paris, Ser. I 343 (2006).     

On the Equivalence of Probability Spaces

For a general class of Gaussian processes W, indexed by a sigma-algebra \({\mathscr {F}}\) of a general measure space \((M,{\mathscr {F}}, \sigma )\), we give necessary and sufficient conditions for the validity of a quadratic variation representation for such Gaussian processes, thus recovering \(\sigma (A)\), for \(A\in {\mathscr {F}}\), as a quadratic variation of W over A. We further provide a harmonic analysis representation for this general class of processes. We apply these two results to: (i) a computation of generalized Ito integrals and (ii) a proof of an explicit and measure-theoretic equivalence formula, realizing an equivalence between the two approaches to Gaussian processes, one where the choice of sample space is the traditional path space, and the other where it is Schwartz’ space of tempered distributions.     

A class of Gaussian processes with fractional spectral measures

We study a family of stationary increment Gaussian processes, indexed by time. These processes are determined by certain measures σ (generalized spectral measures), and our focus here is on the case when the measure σ is a singular measure. We characterize the processes arising from σ when σ is in one of the classes of affine selfsimilar measures. Our analysis makes use of Kondratiev white noise spaces. With the use of a priori estimates and the Wick calculus, we extend and sharpen (see Theorem 7.1) earlier computations of Ito stochastic integration developed for the special case of stationary increment processes having absolutely continuous measures. We further obtain an associated Ito formula (see Theorem 8.1).     

Study of magnetoresistance and conductance of bicrystal grain boundary in La0.67Ba0.33MnO3 thin film

La_0.67Ba_0.33MnO₃ (LBMO) thin film is deposited on a 36.7°C SrTiO₃ bicrystal substrate using laser ablation technique. A microbridge is created across bicrystal grain boundary and its characteristics are compared with a microbridge on the LBMO film having no grain boundary. Presence of grain boundary exhibits substantial magnetoresistance ratio (MRR) in the low field and low temperature region. Bicrystal grain boundary contribution in MRR disappears at temperature T>175 K. At low temperature, I-V characteristic of the microbridge across bicrystal grain boundary is nonlinear. Analysis of temperature dependence of dynamic conductance-voltage characteristics of the bicrystal grain boundary indicates that at low temperatures (T<175 K) carrier transport across the grain boundary in LBMO film is dominated by inelastic tunneling via pairs of manganese atoms and tunneling through disordered oxides. At higher temperatures (T>175 K), magnetic scattering process is dominating. Decrease of bicrystal grain boundary contribution in magnetoresistance with the increase in temperature is due to enhanced spin-flip scattering process.