Time-Resolved Femtosecond Degenerate Four-Wave Mixing in LiNbO3：Fe,Mg Crystal

Forward degenerate four-wave mixing （DFWM） processes are investigated with a femtosecond pulsed laser in lithium niobate crystal doubly-doped with magnesium and iron （LiNbO3：Fe, Mg）. The pulse energy dependence reveals a pure third-order nonlinear response, and the third-order nonlinear susceptibility x^（3） in the material is evaluated to be 4.96 × 10^-13 esu. The time-resolved DFWM process shows a response time of x^（3） shorter than 100fs, which is due to the nonresonant electronic nonlinearities. Our results indicate that LiNbO3 crystals have potentials for ultrafast real-time optical processing systems, which require a large and fast x^（3） optical nonlinearity.     

Experimental 511 W Composite Nd：YAG Ceramic Laser

We demonstrate a 511 W laser diode pumped composite Nd：YAG ceramic laser. The optical pumping system is consisted of five laser diode stacked arrays arranged in a pentagonal shape around the ceramic rod whose size is φ6.35×144mm. When the pumping power is 1600 W, the cw laser output up to 511 W at 1064nm can be obtained with a linear piano-piano cavity, and the optical-to-optical efficiency is 31.9%. To our knowledge, this is the highest value of laser output by using a newly invented composite Nd：YAG ceramic rod as the gain medium.     

基于TMS320VC5416的计算装置设计

TMS320VC5416是TI公司生产的一款低功耗高性能：定点16位数字信号处理器，工作频率可达150MHz，具有很强的数字信号处理能力。采用基于TMS320VC5416的数字处理装置能够完成较复杂的数据采集、传输、处理和仿真通信功能。经过不断调试并改进，该计算装置在下面两方面取得初步成效。     

二维渗流中的最短开穿透

在二维边渗流模型中，设／ｒｎ／＝ｍｉｎ（／ｒ／：ｒ是正方形「０，ｎ」＾２的开穿透），这里／ｒ／表示ｒ的长度，本文证明了在上临界状态有ｌｉｍＥ／ｒｎ／／ｎ＝λ，在临界状态时，我们对Ｅ／ｎ／给出了上界，并对一个ｒｎｒｎ给出了Ｅ／ｒｎ／的下界。     

HL—1M托卡马克中的硼化

用碳硼烷加氢直流辉光放电，在ＨＬ－１Ｍ托卡马克内壁上原位涂覆了含碳硼膜，平均厚度５０－７０ｎｍ硼碳比约为１：６。硼化后器壁条件有了本质的改善，对器壁上氧源的抑制特别显著，也增强了石墨表面抗氢离子和氢原子化学蚀刻能力。硼化显著了改善了等主子体性能和提高了等离子体参数。扰动显著减小，放电稳定性和重复性提高。硼化为低混杂波电流驱动实验创造了良好的壁条件。     

解干扰力下平板动力响应的DQ半解析法

本文针对干扰力Ｆ（Ｔ，ｔ）－Ｑｓｉｎωｔ作用下圆形薄板的动力响应问题，提出了ＤＱ半解析法。该方法直接从控制秃分方程出发，在空间域采用ＤＱ法（Ｄｉｆｆｅｒｅｎｔｉａｌ Ｑｕａｄｒａｔｕｒｅ Ｍｅｔｈｏｄ），在时间域取级数，采用时域配点法得到求解位移场全部待定参数的线性方程组。解一次线性方程组即全域的动力响应位移场。     

Experimental Studies on Thermal and Electrical Properties of Platinum Nanofilms

We experimentally studied the in-plane thermal and electrical properties of a suspended platinum nanofilm in thickness of 15 nm. The measured results show that the in-plane thermal conductivity, the electrical conductivity and the resistance-temperature coefficient of the studied nanofilm are much less than those of the bulk material, while the Lorenz number is greater than the bulk value. Comparing with the results reported previously for the platinum nanofilm in thickness of 28 nm, we further find that the in-plane thermal conductivity, the electrical conductivity and the resistance-temperature coefficient decrease with the decreasing thickness of the nanotilm, while the Lorenz number increases with the decreasing thickness of the nanofilm. These results indicate that strong size effects exist on the in-plane thermal and electrical properties of platinum nanofilms.