Pb0.92Sr0.08-xBax(Sb2/3Mn1/3)0.05Zr0.48Ti0.47O3的制备与性能研究

采用传统固相烧结法制备了Pb0.92Sr0.08-xBax(Sb2/3 Mn1/3)005Zr0.48Ti0.47O3(PSBSM-PZT)压电陶瓷样品.研究了不同Sr2+、Ba2+掺杂含量对样品的相结构、微观形貌、压电和介电性能的影响.结果显示:所有样品均为钙钛矿结构.而当x=0.02～0.06时,陶瓷样品组分位于准同型相界区(MPB).由于位于准同型相界区域的陶瓷样品对于电畴的转向具有促进作用,所以处于MPB区域的陶瓷样品具有较大的压电和介电性能,但同时由于电畴转向带来的较大内摩擦和结构损耗,从而提高了材料的机械损耗和介电损耗.当x=0.02时的陶瓷样品获得最佳的综合性能:d33=346 pC/N,kp=0.58,Qm=1217,εr=1724,tanδ=0.774;.     

Sb-Na共掺p型ZnO的第一性原理研究

运用密度泛函理论,计算了Sbzn、Nazn、Sbzn-nNazn掺杂ZnO晶体的稳定性、能带结构和电子态密度.研究发现Sbzn、Nazn、Sbzn-nNazn掺杂ZnO晶体的结构稳定,Sb-Na共掺杂改善了体系的固溶度.能带结构表明,SbZn体系为n型间接带隙半导体材料;NaZn、Sbzn-2NaZn体系为p型半导体材料;Sbzn-NaZn、SbZn-3NaZn体系为本征半导体材料.对p型半导体材料体系的导电性能研究发现,Sbzn-2Nazn体系电导率大于NaZn体系的电导率,即Sbzn-2NaZn掺杂改善了体系的导电性.计算结果为实验制备p型ZnO材料提供了理论指导.     

超大孔聚合物亲和色谱层析介质的制备及评价

探索了用席夫碱法在超大孔聚合物微球表面偶联Protein A配基制备亲和层析介质的方法,以亲水化后的聚丙烯酸酯类超大孔微球为基质,考察了氧化剂浓度(H5IO6)对配基偶联量的影响,以扫描电子显微镜表征微球表面形貌,结果发现其偶联Protein A后微球仍能够保持其大孔结构。考察了该类亲和介质在不同操作流速(361~3 600 cm/h)下的动态载量,在3 600 cm/h操作流速下,人抗体载量与361 cm/h相比仅下降10%左右,表明该类介质适合抗体大分子的快速传质,能够满足快速、高效、高通量分离纯化的需求。     

基于Mueller矩阵椭偏仪的纳米压印模板与光刻胶光栅结构准确测量

在纳米压印工艺中,对模板和压印结构的几何参数进行快速、低成本、非破坏性地准确测量具有非常重要的意义.与传统光谱椭偏仪只能改变波长和入射角2个测量条件并且在每一组测量条件下只能获得振幅比和相位差2个测量参数相比,Mueller矩阵椭偏仪可以改变波长、入射角和方位角3个测量条件,而且在每一组测量条件下都可以获得一个4×4阶Mueller矩阵共16个参数,因此可以获得更为丰富的测量信息.通过选择合适的测量条件配置,充分利用Mueller矩阵中的测量信息,有望实现更为准确的纳米结构测量.基于此,本文利用自主研制的Mueller矩阵椭偏仪对硅基光栅模板和纳米压印光刻胶光栅结构进行了测量.实验结果表明,通过对Mueller矩阵椭偏仪进行测量条件优化配置,并且在光学特性建模时考虑测量过程中出现的退偏效应,可以实现压印工艺中纳米结构线宽、线高、侧壁角以及残胶厚度等几何参数更为准确的测量,同时对于纳米压印光刻胶光栅结构还可以直接得到光斑照射区域内残胶厚度的不均匀性参数.     

Universal order-parameter and quantum phase transition for two-dimensional q-state quantum Potts model

We investigate quantum phase transitions for q-state quantum Potts models (q=2,3,4) on a square lattice and for the Ising model on a honeycomb lattice by using the infinite projected entangled-pair state algorithm with a simplified updating scheme. We extend the universal order parameter to a two-dimensional lattice system, which allows us to explore quantum phase transitions with symmetry-broken order for any translation-invariant quantum lattice system of the symmetry group G. The universal order parameter is zero in the symmetric phase, and it ranges from zero to unity in the symmetry-broken phase. The ground-state fidelity per lattice site is computed, and a pinch point is identified on the fidelity surface near the critical point. The results offer another example highlighting the connection between (i) critical points for a quantum many-body system undergoing a quantum phase-transition and (ii) pinch points on a fidelity surface. In addition, we discuss three quantum coherence measures: the quantum Jensen-Shannon divergence, the relative entropy of coherence, and the l₁ norm of coherence, which are singular at the critical point, thereby identifying quantum phase transitions.     

Iterative filtered ghost imaging

It is generally believed that, in ghost imaging, there has to be a compromise between resolution and visibility. Here we propose and demonstrate an iterative filtered ghost imaging scheme whereby a super-resolution image of a grayscale object is achieved, while at the same time the signal-to-noise ratio (SNR) and visibility are greatly improved, without adding complexity. The dependence of the SNR, visibility, and resolution on the number of iterations is also investigated and discussed. Moreover, with the use of compressed sensing the sampling number can be reduced to less than 1% of the Nyquist limit, while maintaining image quality with a resolution that can exceed the Rayleigh diffraction bound by more than a factor of 10.     

Switching plasticity in compensated ferrimagnetic multilayers for neuromorphic computing

Current-induced multilevel magnetization switching in ferrimagnetic spintronic devices is highly pursued for the application in neuromorphic computing. In this work, we demonstrate the switching plasticity in Co/Gd ferrimagnetic multilayers where the binary states magnetization switching induced by spin-orbit toque can be tuned into a multistate one as decreasing the domain nucleation barrier. Therefore, the switching plasticity can be tuned by the perpendicular magnetic anisotropy of the multilayers and the in-plane magnetic field. Moreover, we used the switching plasticity of Co/Gd multilayers for demonstrating spike timing-dependent plasticity and sigmoid-like activation behavior. This work gives useful guidance to design multilevel spintronic devices which could be applied in high-performance neuromorphic computing.     

Quantum phase transitions in CePdAl probed by ultrasonic and thermoelectric measurements

CePdAl has been recently recognized as a frustrated antiferromagnetic heavy-fermion compound with a pressure- or field-tuned, extended quantum critical phase at zero temperature. Identifying characteristic signatures of the emerging quantum critical phase, which are expected to be distinct from those near a quantum critical point, remains challenging. In this work, by performing ultrasonic and thermoelectric measurements down to very low temperatures in a ³He-⁴He dilution refrigerator in the presence of magnetic field, we are able to obtain some crucial thermodynamic and thermal transport features of the quantum critical phase, including a frustration-related elastic softening detected by ultrasound and a Fermi-surface change probed by thermoelectric effect.     

Impact of AlxGa1-xN barrier thickness and Al composition on electrical properties of ferroelectric HfZrO/Al2O3/AlGaN/GaN MFSHEMTs

Ferroelectric (FE) HfZrO/Al$_{2}$O$_{3}$ gate stack AlGaN/GaN metal-FE-semiconductor heterostructure high-electron mobility transistors (MFSHEMTs) with varying Al$_{x}$Ga$_{1-x}$N barrier thickness and Al composition are investigated and compared by TCAD simulation with non-FE HfO$_{2}$/Al$_{2}$O$_{3}$ gate stack metal-insulator-semiconductor heterostructure high-electron mobility transistors (MISHEMTs). Results show that the decrease of the two-dimensional electron gas (2DEG) density with decreasing AlGaN barrier thickness is more effectively suppressed in MFSHEMTs than that in MISHEMTs due to the enhanced FE polarization switching efficiency. The electrical characteristics of MFSHEMTs, including transconductance, subthreshold swing, and on-state current, effectively improve with decreasing AlGaN thickness in MFSHEMTs. High Al composition in AlGaN barrier layers that are under 3-nm thickness plays a great role in enhancing the 2DEG density and FE polarization in MFSHEMTs, improving the transconductance and the on-state current. The subthreshold swing and threshold voltage can be reduced by decreasing the AlGaN thickness and Al composition in MFSHEMTs, affording favorable conditions for further enhancing the device.     

β-重氮-α-羰基酰胺类化合物的合成及其与烯烃的环丙烷化反应

以重氮丙酮酸乙酯和氨基醇为原料,经过氨解合成了一系列β-重氮-α-羰基酰胺类化合物,并与环己烯反应制备了环丙烷化产物,其结构经1H NMR,13C NMR,IR和HR-MS确证。