NPB厚度对异质结OLED载流子复合区域的调控

通过调控p型半导体N,N′-bis(naphthalen-1-y)-N,N′-bis(phenyl)benzidine(NPB)层的厚度,制备了结构为ITO/NPB/aluminum(Ⅲ)bis(2-methyl-8-quinolinato)-4-phenylphenolate(BAlq)/NPB(0~18nm)/tri-(8-hydroxyquinoline)-aluminum(Alq₃)/Mg:Ag的多层有机电致发光器件.分析结果表明,在该类异质结器件中,NPB不仅可以作为空穴传输材料,在适当的厚度范围内,它还可以起到调控载流子复合区域的作用;当NPB厚度在0~18nm之间变化时,随着其厚度增加器件发光颜色可由蓝色变为绿色.通过器件发光光谱的表征可以得知,器件的载流子复合区域相应地由BAlq层转移至Alq₃层.     

Modeling for V–O_2 reactive sputtering process using a pulsed power supply

In this article, we present a time-dependent model that enables us to describe the dynamic behavior of pulsed DC reactive sputtering and predict the film compositions of VOx prepared by this process. In this modeling, the average current J is replaced by a new parameter of Jeff. Meanwhile, the four species states of V, V2O3, VO2, and V2O5 in the vanadium oxide films are taken into consideration. Based on this work, the influences of the oxygen gas supply and the pulsed power parameters including the duty cycle and frequency on film compositions are discussed. The model suggests that the time to reach process equilibrium may vary substantially depending on these parameters. It is also indicated that the compositions of VOx films are quite sensitive to both the reactive gas supply and the duty cycle when the power supply works in pulse mode. The ‘steady-state’ balance values obtained by these simulations show excellent agreement with the experimental data, which indicates that the experimentally obtained dynamic behavior of the film composition can be explained by this time-dependent modeling for pulsed DC reactive sputtering process. Moreover, the computer simulation results indicate that the curves will essentially yield oscillations around the average value of the film compositions with lower pulse frequency.     

基于灰熵的西服缝制作业疲劳强度综合评价研究

目前我国西装生产缝制作业以手工作业为主,而且缝制工人劳动量大,极易累积损伤,严重制约了西装生产效率的提升.如何对缝制作业进行疲劳强度综合评价已成为西装生产人因工程改善的关键.基于灰熵综合评价法,将Human CAD与缝制作业虚拟仿真方法相结合,建立了西服缝制作业疲劳强度评价模型,并对作业人员的操作可及度、可视性以及舒适性等工效分析展开研究.通过WZ服装厂缝制作业疲劳强度实例分析对所建立的评价模型和标准进行验证,并得到了作业姿势是影响缝制作业疲劳强度的最主要因素,评价效果有助于缝制作业人因工程改善.评价方法获取贴近生产实际,计算方便,易于推广,能够为作业系统人因能效改善提供定量依据.     

Synthesis and Structure of PEDOT Prepared through a Modified LB Film Method

Adopting LB film method, an arachidic acid (AA)/PEDOT multilayer LB film and polymerized EDOT monomers in hydrophilic group of LB were chosen to prepare the arachidic acid (AA)/PEDOT multilayer LB film. UV-Vis, FT-IR and XPS analyses implied that EDOT was effectively polymerized in film, and thus PEDOT conducting polymer was produced. Analyses of XRR and SIMS indicated that the film had a well-arranged lamella structure, and further research showed that polymerization of EDOT in AA film destroyed the orderliness of the original LB film. This phenomenon could be related to the destructive effect of polymerization on the layered structure. We used four-point probe and semiconductor instrument to study the conductivity property of the film, and observed that the conductivity of AA/PEDOT film had sudden changes with the changes of processing time in an effective conduction network, which was caused by "permeability" in conducting channel of multilayer film. The test results also indicated that the conductivity of AA/PEDOT film was obviously better than that of spin-coating PEDOT/PSS or ODA-SA/PEDOT-PSS film due to the higher π structure of PEDOT structure and ordered film structure.     

航空光电成像系统像移补偿技术研究

航空光电成像系统由于像移的存在导致成像分辨率下降,严重影响航空光电系统的整机性能。采用像移补偿技术可以提高航空光电系统成像质量。分析了移动探测器像移补偿技术原理与运动光学元件像移补偿技术原理,重点研究了基于快调反射镜(FSM)的高精度像移补偿技术。通过工程简化分析,分别推导了快调反射镜位于平行光路和会聚光路的像移补偿随动角度规律,并针对会聚光路中快调反射镜带来的离焦量进行分析,讨论了离焦量对光学系统波像差的影响。仿真结果表明,随着离焦量的增加,波像差呈线性增大趋势。通过分析光学系统波像差对其光学调制传递函数（MTF）的影响,结果表明F数等于8,在奈奎斯特频率处,当离焦量在0.1 mm以内,光学调制传递函数MTF的下降量在26.6%以内。     

FT-NIR光谱仪测定烟草化学成分不同谱区范围对数学模型影响的研究

应用傅里叶近红外技术建立快速定量分析烟草化学成分的数学模型 ,使用BrukerOptics公司的MPA型傅里叶变换近红外光谱仪 ,谱区扫描范围 12 0 0 0～ 4 0 0 0cm- 1 ,选择不同的谱区范围对烟碱、总糖和总氮三种组分的数学模型进行优化 ,结果显示不同谱区范围对同一组分数学模型影响有明显的差异 ,而且不同组分所选择的最佳建模谱区范围是不一样的 ,说明在模型优化过程中选择最佳谱区范围是非常关键的 ,烟碱、总糖和总氮三种组分模型的最佳谱区范围分别是 95 0 0～ 4 2 31 2cm- 1 ,75 0 2 1～ 4 2 4 6 7cm- 1 ,75 0 2 1～4 5 97 7cm- 1 ,三种组分最佳模型交叉检验的均方差 (RMSECV)分别为 0 0 815 ,0 80 8,0 0 5 6。     

氢化硅薄膜的晶化机理研究

采用PECVD工艺制备了非晶,微晶和多形硅薄膜,研究了电极间热梯度对氢化硅薄膜结构的影响.根据拉曼光谱得到了微晶硅的晶化率,并在椭偏仪中用BEMA模型验证了其准确性.根据理论模型研究了热梯度对微晶和多形硅薄膜沉积机理的影响.研究薄膜厚度对晶化率的影响表明微晶薄膜底端和表面之间存在晶化梯度,而多形硅薄膜中无晶化梯度存在.采用Tauc-Lorentz模型拟合得到薄膜的结构参数表明非晶硅薄膜的致密度和有序度低,而多形硅和微晶硅薄膜的有序度、致密度相近,且明显高于非晶硅. 关键词： 氢化硅 晶化 热梯度 结构     

六硼化镧场发射阴极阵列的制作及特性

 采用氧等离子体氧化刻蚀工艺,制备出尖锐的六硼化镧（LaBLaB₆）微尖锥场发射阵列。在二极管结构中测试了LaB₆-FEAs的场发射性能,得到了真空度为5×10^-5 Pa 下的I-V曲线及相应的Fowler-Nordheim节点。结果表明,由于LaBLaB₆材料较低的逸出功,使得阴极的开启电压较小,开启场仅为7 V/μm。此外,将氧等离子体氧化刻蚀方法与氩氧等离子体刻蚀方法和电化学刻蚀方法进行了比较,表明氧等离子体氧化刻蚀方法是制备LaB₆场发射阴极阵列的一种理想工艺。     

单晶LaB6场发射阵列的电化学腐蚀工艺

 六硼化镧（LaB₆）场发射尖锥阵列的刻蚀工艺是制备LaB₆场发射阵列阴极的关键。在(111)面单晶LaB₆基片上,用等离子体增强化学气相沉积法制备氮化硅层做掩膜,光刻后采用电化学腐蚀方法对基片进行刻蚀,得到具有一定高度的LaB₆尖锥场发射阵列。讨论了单晶LaB₆的电化学腐蚀机理。改变各种电化学腐蚀参数,包括电解液成分、电解液浓度、阳极所加电压,用电子扫描显微镜观察样品形貌。结果发现H₃PO₄是刻蚀单晶LaB₆的理想电解液,它克服了过去电化学实验中经常遇到的尖锥各向异性问题。随着电解液浓度或阳极电压的增大,尖锥高度增加,但是基底表面变得更为粗糙。另一方面,阳极电压太小时,有横向刻蚀现象产生,不利于提高发射体的场增强因子。此外,在二极管结构中初步测试了LaB6尖锥场发射阵列的电流发射特性,在真空度2×10^-4 Pa、极间距离0.1 mm、阳极电压900 V下,发射电流达到13 mA。     

椭偏透射法测量氢化非晶硅薄膜厚度和光学参数

针对多角度椭偏测量透明基片上薄膜厚度和光学参数时基片背面非相干反射光的影响问题,报道了利用椭偏透射谱测量等离子增强化学气相沉积法(PECVD)制备的a-Si:H薄膜厚度和光学参数的方法,分析了基片温度T_s和辉光放电前气体温度T_g的影响.研究表明,用椭偏透射法测量的a-Si:H薄膜厚度值与扫描电镜(SEM)测得的值相当,推导得到的光学参数与其他研究者得到的结果一致.该方法可用于生长在透明基片上的其他非晶或多晶薄膜. 关键词： 椭偏测量 透射法 光学参数 氢化非晶硅薄膜