差分吸收光谱法测量大气污染的测量误差分析

差分吸收光谱技术被广泛地应用于测量大气中微量元素的浓度，尽管该技术利用最小二乘法来反演待测气体的浓度，能够得到很高的测量精度。但是，由于仪器本身的噪声以及测量波段其它气体的干扰等，使得仪器的测量有一定的误差，而且上述因素还决定着仪器的测量下限。对差分吸收光谱方法的测量误差以及引起误差的原因作了详细的分析。     

生长温度对碳纳米管阴极场发射性能的影响

碳纳米管(Carbon Nanotubes,CNTs)场发射平面显示器(Field Emission Display,FED)与其他显示器比较显示了其独特优点,被认为是未来理想的平面显示器之一。碳纳米管阴极作为器件的核心部分,其性能的好坏直接影响显示器的性能。针对30~60英寸(76.2~152.4cm)大屏幕显示器所用的厚膜工艺,即采用丝网印刷法制备了碳纳米管阴极阵列,研究了化学气相沉积法在不同温度下生长的CNTs的场发射电流-电压特性,找到了适合FED用碳纳米管的最佳生长温度。结果表明生长温度越高(750℃),CNTs场发射性能越好。并用荧光粉阳极测试这些CNTs的场发射发光显示效果,验证了上述结论。     

两种方法制备ITO薄膜的红外特性分析

比较了用电束加热蒸发法和直流磁控溅射法制备的氧化锡铟(ITO)薄膜在红外波段的光学特性实验发现,通过直流磁控溅射在常温下制备的ITO薄膜在红外波段折射率稳定、消光系数小,比电子束加热蒸发制备的膜有较高的透过率在波长1550nm附近的透过率可达86%以上,消光系数约为004,方电阻最低为100Ω/□.     

基于同步辐射加速器的康普顿背散射γ射线源(Ⅰ)产生MeV量级γ光子的数值计算

提出在筹建的上海同步辐射装置上建造一条MeV量级γ射线束及应用站,采用μm波长的红外(或远红外)激光与储存环中3.5GeV电子束进行康普顿背散射,从而获得能区为1—25MeV的康普顿背散射γ光子束,该光子束具有高强度、高极化度(线和圆极化)、准单色、方向性好的优点,可以广泛地应用于核物理和核天体物理基础研究及相关的应用研究领域.介绍了康普顿背散射的基本原理,并结合储存环参数给出了光子束性能的数值计算结果.     

Soliton interaction under the influence of higher-order effects

In this paper, we present exact N-soliton solution by employing simple, straightforward Darboux transformation based on the Lax pair for Hirota equation, a higher-order nonlinear Schrödinger (HNLS) equation. As examples, one- and two-soliton solutions in explicit forms are given and their properties are also analyzed. A bound solution without interaction will be theoretically predicted if one can adjust frequency shift for each soliton appropriately. Further, we obtain the approximate eigenvalues by employing two-soliton solution and discuss analytically the interaction between neighboring solitons under the influence of the higher-order effects. It is shown that the combined effects of the higher-order effects can restrain the interaction between neighboring solitons to some extent. The results are proved by directly solving HNLS equation numerically.     

Combined effect of PMD and PDL on four-wave-mixing-induced crosstalk in WDM system

We derive an explicit autocorrelation function (ACF) formula of state of polarization for a fiber transmission system with polarization mode dispersion (PMD) and polarization dependent loss (PDL), which is found to agree well with Monte Carlo simulation. Then we use the new ACF to investigate the combined effect of PMD and PDL on the polarization multiplexed scheme. We find the performance of the polarization multiplexed scheme can be deteriorated more severely than the case without PDL.     

Algorithms for flattened Gaussian beams passing through apertured and unapertured paraxial ABCD optical systems

The propagation property of flattened Gaussian beams (FGBs) is studied based on the Collins formula, and analytical propagation equations for FGBs with and without an aperture are derived. It is shown that the closed-form expressions for the FGB of order N passing through paraxial ABCD optical systems without an aperture can be written as the combinations of Confluent Hyper-geometric Functions, and that the analytical equations for the FGB of order N passing through apertured paraxial ABCD optical systems may involve Error Functions. The proposed algorithms for the considered beams can save computing time, provide intuitive physical insights, and help to design optical systems. Our results are confirmed and illustrated with numerical examples.     

U：CaF2晶体的分凝特性与光谱性质

应用TGT法生长了直径为75mm的U：CaF2晶体，宏观上透明完整.应用公式K0=Cs/Cl计算了U在CaF2晶体中的分凝系数等于0.53.应用溶质分布一般公式Cs=K0C0(1-g)K0-1，计算U的浓度分布与测量值，数值符合说明晶体生长过程接近平衡状态.分析不同条件下生长的U: CaF2晶体的晶胞参数和吸收光谱，结果表明生长气氛决定U的价态及电荷补偿机理：无PbF2存在的条件下，U为+4价，晶体呈绿色；PbF2的加入起到氟化去氧作用，U倾向于以离子半径最接近于Ca2+的U3+存在，晶体呈红色.从晶体生长开始到结束的部位，U3+:CaF2晶体吸收光谱的峰位不变，峰强呈现与U浓度相同的增加趋势.U3+:CaF2晶体外层厚约5mm处呈黄色，含有U3+和U2+的混合价态离子，其原理是石墨坩埚的还原作用通过单质铅，使部分的U3+进一步还原成了U2+. 关键词： 铀 氟化钙晶体 分凝系数 晶胞参数     

Asymptotic Analysis of the Current-Voltage Curve of a pnpn Semiconductor Device

We consider the one-dimensional steady-state semiconductor deviceequations modelling a pnpn device. There are two relevant scalingsof the equations corresponding to small and large applied voltages.In both scalings, the semiconductor equations can be consideredas singularly perturbed. It turns out that the small-voltagescaling breaks down for current values between two saturationcurrents. In that interval, the large-voltage scaling has tobe employed. For both scalings, we derive the first-order termsof an asymptotic expansion and show that the reduced problemhas a solution. An example verifies that the current-voltagecurves obtained have the expected qualitative structure.     

一类图的特征多项式与匹配多项式

本文对一类具有对称轴的图A_n(n≥0),得到了它的特征多项式及匹配多项式的精确表达式;同时还得到A_(?)的完美匹配数。