Transmission property for a one-dimensional photonic crystal containing a subwavelength layer and a nonlinear layer

Using the transfer matrix method, we investigate the transmission property of a one-dimensional photonic crystal doped with a linear subwavelength layer and a Kerr-type nonlinear layer. We find that a thin film of subwavelength layer can significantly modify the characteristic of optical bistability. We also find that the sequence of the thin film and the nonlinear layer has a major impact on the hysteretic behavior. With the investigations to the linear defect mode and the electric field distribution in the nonlinear material, we explain these phenomena. PACS 42.65.Pc; 42.25.Bs; 42.70.Qs; 42.65.-k; 78.66.-w     

Facile liquid phase deposition of thick reflective GeO2 film for hollow waveguide delivery of CO2 laser radiation

A new idea of using LPD (liquid phase deposition) to prepare a GeO₂ thick reflective film for hollow waveguide delivery of CO₂ laser radiation was investigated in this work. The LPD process was achieved by designedly adding acid to GeO₂–aqueous ammonia. The addition of acid could induce the transformation of germanate ions into GeO₂ solutes, leading to the deposition of a GeO₂ ceramic film when the concentration of GeO₂ solute is higher than its saturation solubility. It was found that the highest film growth rate occurred at a pH value of 3, while a film with low surface roughness and good adhesion to the substrate was produced at a pH value of 2 and the film could be converted to a smooth, compact hexagonal GeO₂ film by heat treatment at 1120 °C for 30 min. Two abnormal dispersion bands within 7.6–9 μm and 9.6–11.2 μm were mainly caused by the silica glass substrate and the GeO₂ film, respectively. The film was thick enough to achieve the total reflectance of the CO₂ laser radiation. The use of this GeO₂ film in a hollow waveguide structure for CO₂ laser radiation delivery is discussed based on the transmission loss and the feasibility of the deposition of the GeO₂ film inside silica capillary tubes. The results show that the hollow waveguides with low transmission loss are most likely fabricated at a low cost using the LPD-derived GeO₂ reflective film. PACS 78.20.-e; 78.66.-w; 42.70.-a; 78.20.Ci; 78.40.-q     

锐钛矿(TiO2)半导体的氧空位浓度对导电性能影响的第一性原理计算

基于低温重氧空位锐钛矿半导体的态密度计算,在同等条件下研究取不同大小模型的锐钛矿做适量浓度的氧空位存在,分别对进入导带的相对平均电子数和氧空位类杂质的散射迁移率进行计算,之后对电导率进行类比,发现锐钛矿半导体的导电性能对适量浓度低的氧空位有利可行得到了证明.同时,低温重氧空位的条件下,锐钛矿半导体的电导率不仅与氧空位浓度有关,而且和进入导带的平均电子数有关,和氧空位散射的电子迁移率有关的正确结论. 关键词： 锐钛矿半导体 氧空位浓度 电导率 第一性原理计算     

高氧空位简并锐钛矿TiO2半导体电子寿命的第一性原理研究

为了研究锐钛矿TiO₂晶体中高氧空位浓度对电子寿命的影响,利用基于局域密度泛函理论框架下的广义梯度近似平面波超软赝势方法, 用第一性原理对含高氧空位浓度的锐钛矿TiO₂晶体进行了结构优化处理、能带分布和态密度分布计算, 表明在温度一定和高氧空位浓度的条件下, 锐钛矿TiO₂的电子寿命随氧空位浓度的增大而减小;电子浓度的大小对电子寿命无影响.同时,锐钛矿TiO₂晶体中高氧空位浓度时,发现有莫特相变的现象. 关键词： 高氧空位 2半导体')" href="#">锐钛矿TiO₂半导体 电子寿命 第一性原理     

传输可见光的空芯光子带隙光纤的研究

利用全矢量平面波展开法(FVPWM)对采用改进的两次堆积法制备的空芯光子带隙光纤进行了数值模拟.在特定传播常数β下,光纤在500—1000 nm的波段内出现多条宽窄不同的有效光子带隙.依据有效折射率的不同,部分带隙中的空气-导模将以不同的形式存在.经过实验测试,发现测得的带隙位置相对于模拟结果向短波段发生了较明显的移动,主要原因被认为是光纤结构的纵向不均匀性和包层节点处间隙孔的存在. 关键词： 空芯光子带隙光纤 全矢量平面波展开法 有效光子带隙 空气-导模     

高增益双层组合GaAs光电导开关设计与实验研究

设计制备了一种由双层半绝缘GaAs:EL2晶体组成的新型超快光电导功率开关.由于触发状态下双层GaAs晶体之间满足动态分压关系,使该开关在强电场偏置下触发时,双层GaAs晶体既能先后发生高增益过程,又能相互抑制对方进入锁定状态,开关输出为近似方波的双峰脉冲.因此,这种开关的工作方式既具有非线性模式特有的所需触发光能小、上升速度快等优点,又具有线性模式特有的重复工作频率高、使用寿命长等优点.偏压6500V时用脉宽8ns、能量3mJ的1064nm激光触发,输出电脉冲的上升沿为13.2ns,下降沿为54.6ns 关键词： 光电半导体开关 高增益 锁定效应     

System Size Resonance Associated with Canard Phenomenon in a Biological Cell System

通过研究发现,内噪声对细胞内钙振荡是有影响的,当体系处于由确定性方程所确定的稳定区域时,如果考虑内噪声的作用,就会有随机的钙振荡发生. 并且这种振荡的行为随着体系尺度的变化出现两个最大值,表明了尺度共振现象的发生. 这种行为是与体系的Canard现象密切相关的. 最佳的体系尺度与真实的细胞体积是相吻合的,并且这种吻合基本不随控制参数的改变而改变.     

支持向量回归同时测定苯甲酸和水杨酸稳健模型的研究

按照均匀设计方法设计校正集实验数据,用支持向量回归方法(SVR)建立校正模型,采用留一交叉验证方法对SVR方法的参数进行优化,研究SVR稳健模型在分光光度法同时测定苯甲酸和水杨酸中的应用.结果表明,用不同日期测定的校正集数据建立SVR模型,对不同日期测定的检验集数据的预测结果也不同;检验集数据的测定日期与校正集数据的测定日期愈接近,则预测结果愈准确;将不同日期测定的校正集数据合并在一起建立SVR模型,模型的稳健性得到了明显的提高;将选定的校正集用于苯甲酸和水杨酸的同时测定,预测结果的回收率在97%-102%之间,结果满意.     

Fluorinated nanoporous SiO2 films with ultra-low dielectric constant

Fluorinated nanoporous silica (denoted as SiO₂:F) thin films with low dielectric constant were prepared by a sol-gel method and spin coating technique. The leakage current densities of the SiO₂:F thin films were 10⁻⁸ and 3 × 10⁻⁶ A/cm² respectively for the as-deposited films and for those subjected to annealing at a temperature of 450 °C. These currents are more than one order of magnitude lower than those of the common SiO₂ films. Photoluminescent results showed strong blue-light emission and a small blue shift in the SiO₂:F films that were related to the increment of the porosity. The dielectric properties were also characterized and the k value of the annealed SiO₂:F film was found to be about 1.67. The hole size in the films is small and the size distribution is uniform for the annealed SiO₂:F samples due to the effects of fluorination. The underlying mechanism for fluorination is discussed in this paper.