Impact of amorphous Ge thin layer at the amorphous Si/Al interface on Al-induced crystallization

We investigated the impact of an amorphous Ge (a-Ge) thin layer inserted at the amorphous Si (a-Si)/Al interface on Al-induced crystallization. In situ observation of the growth process clarified that the nucleation rate is drastically reduced by insertion of a-Ge, which led to increase in the average size of crystal grains. This was interpreted as resulting from decrease in the driving force of crystallization, mainly due to the larger solubility of Ge in Al than that of Si in Al. The obtained films were SiGe alloys with lateral distribution of Ge content, and its origin is discussed based on the two-step nucleation process.     

Pattern formation mechanism of a periodically faceted interface during crystallization ofSi

We investigated the pattern formation mechanism of a periodically faceted crystal–melt interface during the crystallization of Si by in situ observation. It was directly proved that spacing between the reentrants of adjacent zigzag facets increases with the unification of adjacent facets when a facet with a higher growth velocity catches up with the one with a lower growth velocity. The spacing becomes stable after unification, and the stable spacing was found to increase with increase in growth velocity. The experimental results was discussed by taking the negative temperature gradient in front of the growth interface into account.     

A new class of rhodamine luminophores: design, syntheses and aggregation-induced emission enhancement

A new class of rhodamine luminophores, 3',3'-bis(oxospiroisobenzofuran)-3,7-bis(dialkylamino)benzopyrano-xanthene derivatives (ABPX), have been successfully developed. The emission behavior of ABPX series is directly opposite to the concentration quenching of conventional rhodamine dyes. ABPX series exhibit aggregation-induced emission enhancement (AIEE).     

Morita Equivalent Principal 3-Blocks of the Chevalley Groups G2(q)

The principal 3-block of a Chevalley group G₂(q) with q a powerof 2 satisfying q 2 or 5 mod 9 and the principal 3-block ofG₂(2) are Morita equivalent. 2000 Mathematical Subject Classification:20C05, 20C20, 20C33.     

Structural confirmation of ostreocin-D by application of negative-ion fast-atom bombardment collision-induced dissociation tandem mass spectrometric methods

Negative-ion fast-atom bombardment collision-induced dissociation tandem mass spectrometric (FAB-CID-MS/MS) methodology was successfully applied to verify the highly complex structure of ostreocin-D (MW 2633), a new palytoxin analog isolated from the marine dinoflagellate Ostreopsis siamensis and proposed to be 42-hydroxy-3,26-didemethyl-19,44-dideoxypalytoxin based on NMR data. The charge-remote fragmentations were facilitated by a negative charge introduced to a terminal amino group or to a hydroxyl group at the other terminus by a reaction with 2-sulfobenzoic acid cyclic anhydride. Product ions generated from the [M - H](-) ions provided information on the structural details of ostreocin-D. Comparisons between the spectral data for ostreocin-D and palytoxin also provided a rational basis for the assignments of product ions.     

Growth of multicrystalline Si with controlled grain boundary configuration by the floating zone technique

The floating zone technique was employed to grow multicrystalline Si with controlled grain boundary configuration. Purposely designed bi-crystals were utilized as seed crystals to investigate the effect of the tilt angle from the perfect twin boundary on the growth behavior. When the growth was initiated from a bi-crystal with a Σ3 twin boundary, no particular change took place on the grain boundary configuration during growth. On the other hand, the decrease of the tilt angle during growth was observed when the growth was initiated from a bi-crystal with a tilted boundary from Σ3. This was accompanied by the appearance of new crystal grains. The reduction of the total interface energy would be a possible driving mechanism for this phenomenon.     

Characterization of the E1′ center in quartz: Role of aluminum hole centers and oxygen vacancies

The growth of E₁′ centers in a variety of natural and synthetic quartz crystals has been investigated by employing the electron spin resonance technique. It has been reported that the growth of E₁′ centers, formed by irradiation and subsequent annealing at 300 °C for 15 min, scale with the concentration of the aluminum hole center, [AlO₄]⁰, till a limit. Later, the E₁′ centers show saturation even when the [AlO₄]⁰-center continues to grow. For quartz with low efficiency of the formation of [AlO₄]⁰-center or irradiated with low accumulated doses, the intensity of E₁′ center was small where not all oxygen vacancies are converted to the E₁′ center. Thus, besides the availability of a number of oxygen vacancy sites, the number of holes released from the [AlO₄]⁰-center plays an important role in the formation of E₁′ centers in quartz.     

Coexistence of ferro- and antiferromagnetism and phase transitions in itinerant electron systems

It is shown from a general point of view that the coexistence of ferro- and antiferromagnetism with a symmetry-breaking is possible in certain itinerant electron systems where the wave vector dependent susceptibility χ_q⁰ without the electron-electron interaction has two peaks at q = 0 and q = Q, the antiferromagnetic vector. The conditions for the coexistence and the possible phase diagrams in the H-T plane and the nature of phase transitions are discussed.     

Temperature-dependence of the angle-resolved photoemission in ferromagnetic transition metals

Temperature-dependence of the angle-resolved photoemission spectra in ferromagnetic metals is discussed in the light of a general picture of spin fluctuations. Calculations are made for Fe and Ni by using a local approach to the spin fluctuations and the results are compared with the recent calculation based on a long wave approximation.     

Predicted effects of gamma and neutron irradiation on silicon solar cells

Numerical analysis of the characteristics of silicon solar cells under-ray or fast neutron irradiation is presented. The degradation of spectral response, short-circuit current, maximum power, open-circuit voltage and curve power factor are discussed. The calculation is based on estimating the minority carrier lifetime by the Shockley-Read equation, assuming the introduction rate, capture cross-section and the energy level to be equal to those of various predominant recombination centres, such as E-centre (phosphorus-vacancy complex), A-centre (oxygen-vacancy complex) and J-centre (boron-vacancy complex) in-irradiated silicon single crystals. The simulated results show good agreement with experiment for N-type F·Z and C·Z bulk crystals with E-centres, and for P-type C·Z bulk crystal with J-centres.