不同类型石油卟啉标志物的光谱、质谱及色谱特征

本文利用紫外－可见光谱、质谱及色谱对ETIO、DPEP及Rhodo型石油卟啉标志物的特征性和相关性进行了研究，结果指出，在可见光谱带四个特征峰的吸收强度ETIO型为Ⅳ＞Ⅲ＞Ⅱ＞Ⅰ，DPEP型为Ⅳ＞Ⅱ＞Ⅲ＞ⅠRhodo型为Ⅲ＞Ⅱ＞Ⅳ＞Ⅰ，在反相高效液相色谱的体系中流出顺序为，先流出的是Rhodo型卟啉，其次是ETIO和DPEP型。不同类型卟啉的质谱特征是，各卟啉化合物基本以分子离子峰出现，极少碎片峰，同类卟啉化合物按正态分布。     

啁啾脉冲激光放大中的自相位调制效应

利用光与物质相互作用的半经典理论建立了啁啾脉冲激光放大的输运方程,数值分析了多程放大过程中自相位调制对啁啾脉冲时域特性和频域特性的影响研究结果表明,由于自相位调制引起附加频率啁啾产生,啁啾脉冲瞬时频率发生变化,放大特性受到影响.通过对增益饱和状态下自相位调制效应的研究,提出利用入射脉冲的线性频率啁啾抑制自相位调制的影响. 关键词：     

晶体压杆式压力传感器的动力传输性质

一般晶体压杆传感器的测时间隔均受压杆长度的限制。为此,我们研究了压杆的动力学性质。结果表明,要获得正确的压力波形,应设法减弱存在于压杆顶端部的径向振动和压杆尾端反射波对入射压力脉冲的干扰。本文提出波速色散压杆的设计,从而使传感器的性能改善,其最大优点在于测时间隔不受杆长的限制。     

Distinguishable RGE Running Effects Between Dirac Neutrinos and Majorana Neutrinos with Vanishing Majorana CP-Violating Phases

In a novel parametrization of neutrino mixing and in the approximation of т-lepton dominance, we show that the one-loop renormalization-group equations (RGEs) of Dirac neutrinos are different from those of Majorana neutrinos even if two Majorana CP-violating phases vanish. As the latter can keep vanishing from the electroweak scale to the typical seesaw scale, it makes sense to distinguish between the RGE running effects of neutrino mixing parameters in Dirac and Majorana cases. The differences are found to be quite large in the minimal supersymmetric standard model with sizable tanβ, provided the masses of three neutrinos are nearly degenerate or have an inverted hierarchy.     

退火工艺对ICF靶用冷轧镍膜的影响

 为了满足惯性约束聚变（ICF）和状态方程（EOS）实验以及靶装配工艺的需要，在薄膜轧制过程中间以及轧制工艺完成以后需要对镍膜进行热处理来改善其组织结构和力学性能。对多辊轧机冷轧的方法制备的厚11 mm镍膜中间退火工艺进行了研究，根据确定的合适的退火工艺退火后继续轧制得到成品镍膜厚7 mm，表面粗糙度小于50 nm，基本满足目前状态方程实验对箔膜的要求。金相显微照片表明镍膜晶粒经500 ℃保温1 h退火由轧制前的条带状变为等轴晶；镍膜硬度经500 ℃退火后由4 GPa降低到了2.3 GPa左右；XRD衍射测试表明镍膜经500 ℃以上温度退火后，高角度的衍射峰开始出现，织构得到一定程度的改善。由此可以确定镍膜合适的中间退火温度为520 ℃保温1 h。     

First-Principles Study of Electronic Properties in PbS（1^-00） with Vacancy Defect

Electronic properties of both Pb and S vacancy defects in PbS（1^-00） have been studied using the first-principles density functional theory （DFT） calculations with the plane-wave pseudopotentials. It is found that the density of states （DOS） near the top of the valence band and the bottom of the conduction band is significantly modified by these defects. Our calculation indicates that in the case of S vacancy defects the Fermi energy shifts to the conduction band making it as an n-type PbS （donor）. However, in the case of Pb vacancy, because of the appreciable change of the DOS, the system acts as a p-type PbS （accepter）. In addition, the structural relaxation shows that the defect leads to outward relaxation of the nearest-neighbouring atoms and inward relaxation of the next-nearest neighbouring atoms.     

利用非规整膜系实现宽角度入射减偏振、减反射薄膜的研究

利用非均匀膜系理论对宽角度入射减偏振、减反射薄膜进行优化设计,分析了在宽角度入射的情况下,偏振光产生透过率不同的原因,选取了Na3AlF6、Ta2O5和Al2O3三种不同折射率材料,采用BK7作为基底,模拟设计了光谱区在500～560 nm波段、入射角为0~70°之间的多层减偏振、减反射薄膜,设计结果表明,薄膜的透过率得到大幅度提高.     

倾斜均质表面上等径水滴聚合过程的可视化实验

对倾斜均匀表面上等直径水滴的聚合过程及特性进行了可视化实验研究,获得了水滴直径和表面倾角等参数对液滴聚合过程中液滴液桥半径、接触角和接触线变化特性的影响,分析了水滴聚合对其运动的影响.实验结果表明:表面倾角越大,下滑的临界半径越小;液滴的直径越大,液滴聚合后越容易下滑;液滴聚合可以加快液滴的运动,使下滑临界半径减小.     

First-Principles Study of Electronic Structure of the Laves Phase ZrFe2

We perform the ab initio calculation for obtaining the density of states and magnetic properties of ZrFe2 Laves phase compound based on the method of augmented plane waves plus local orbital The results indicate that the ferromagnetic state is more stable than the paramagnetic one, but with a slightly larger volume. The 3d - 4d exchange interactions between Fe and Zr electrons lead to the antiparallel coupling for Fe 3d and Zr 4d states, which is responsible for the ferrimagnetic ordering of the compound. The resulting magnetic moment of about 1.98μB for Fe is spatially localized near the Fe site, while around Zr a small but extended negative spin states causes a moment of about -0.44 μB. Moreover, the resulting magnetic moments with the generalized gradient approximation are more consistent with experimental values than that of the local-spin density approximation.     

Growth of Semi-Insulating GaN Using N2 as Nucleation Layer Carrier Gas Combining with an Optimized Annealing Time

Semi-insulating （SI） GaN is grown using N2 as the nucleation layer （NL） carrier gas combined with an optimized annealing time by metalorganic chemical vapour deposition. Influence of using 1-12 and N2 as the NL carrier gas is investigated in our experiment. It is found that the sheet resistance of unintentionally doped GaN can be increased from 10^4 Ω/sq to 10^10 Ω/sq by changing the NL carrier gas from 1-12 to N2 while keeping the other growth parameters to be constant, however crystal quality and roughness of the tilm are degraded unambiguously. This situation can be improved by optimizing the NL annealing time. The high resistance of GaN grown on NL using N2 as the carrier gas is due to higher density of threading dislocations caused by the higher density of nucleation islands and small statistic diameter grain compared to the one using 1-12 as carrier gas. Annealing the NL for an optimized annealing time can decrease the density of threading dislocation and improve the tilm roughness and interface of AlGaN/GaN without degrading the sheet resistance of as-grown GaN signiticantly. High-quality SI GaN is grown after optimizing the annealing time, and AlGaN/GaN high electron mobility transistors are also prepared.