Graphene growth on h-BN by molecular beam epitaxy

The growth of single layer graphene nanometer size domains by solid carbon source molecular beam epitaxy on hexagonal boron nitride (h-BN) flakes is demonstrated. Formation of single-layer graphene is clearly apparent in Raman spectra which display sharp optical phonon bands. Atomic-force microscope images and Raman maps reveal that the graphene grown depends on the surface morphology of the h-BN substrates. The growth is governed by the high mobility of the carbon atoms on the h-BN surface, in a manner that is consistent with van der Waals epitaxy. The successful growth of graphene layers depends on the substrate temperature, but is independent of the incident flux of carbon atoms.     

Os(VIII)-catalysed oxidation of sulfides by sodium salt of N-chlorobenzenesulfonamide

Catalytic activity of Os(VIII) in the oxidation of some twenty organic sulfides with sodium salt of N-chlorobenzenesulfonamide (CAB) has been investigated in alkaline (pH8.7) t-butanol–water (1:1 v/v) medium. Significant retarding influence of [OH⁻] on the reactivity is exhibited. The catalysed reaction is strongly accelerated in the presence of Hg(II). Imperfections are observed in the linear Hammett relationship in the case of –NO₂ substituents.     

Über die allgemeinen Integrale von partiellen Differentialgleichungen erster Ordnung mit einer unbekannten Funktion und von Systemen solcher Gleichungen,die Integrale im Sinne von S. Lie zulassen

Ohne Zusammenfassung     

Neutral pion production at 350 MeV/u in the system20Ne +27Al

π⁰ -production probability of (9± 2)· 10^{? 3} per²⁰Ne+Al reaction has been measured at 350 MeV/u using the Two Arm Photon Spectrometer TAPS. This yield is consistent with an interpolation of published π-production rates in heavy ion collisions.