强化物理实验提高教学质量

勿庸置疑，课堂只是学生腾飞的基地，社会才是学生飞翔的天空．如何架设课堂与社会之间的桥梁，使学生从理论走向实践，从空想走向实际，是每位教师必须思考的问题．就物理教学而言，实验是架设课堂和社会的桥梁之一．那就是通过物理实验来实现．     

光纤光栅的温度补偿

提出了一种简单、小型的光纤光栅温度补偿器件，将光纤光栅粘贴在具有负热膨胀系数的材料上，实现了光纤光栅的温度补偿。该器件在-20～44℃温度范围内光栅波长变化0.08m，是未补偿光纤光栅的1／8。     

Fluorous osmium tetraoxide (OsO4): a recoverable and reusable catalyst for dihydroxylation of olefins

A fluorous osmium catalyst was firstly developed. It had been effectively used as recoverable and reusable catalyst in the dihydroxylation of olefins.     

一类非线性微分方程的脉冲镇定

针对一般形式的常微分系统提出了脉冲指数镇定的概念，具体研究了一类分离变量型非线性常微分方程的脉冲镇定问题，得到了该方程可脉冲指数镇定的充分判据，全文的概念及结论突出了脉冲在方程稳定性方面的控制效果。     

The amplified model of erbium-doped fiber amplifier (EDFA) with cross-phase modulation (XPM)

Based on the rate equations and the power propagation equations, the amplified model is obtained which considers the cross-phase modulation (XPM)-induced intensity fluctuation between pump power and signal power in erbium-doped fiber amplifier (EDFA). Simulation results show: a higher nonlinear coefficient and a stronger pump power cause a stronger XPM in EDFA. Before the optimal length of EDF, the intensity caused by XPM increases with the increasing length, but after the optimal length, the XPM presents saturation. A bigger nonlinear coefficient γ corresponds to a smaller optimal length and gain, and makes gain saturation more easy. XPM effect will decrease EDFA’s amplified efficiency.     

System Identification Models of the Equivalent Permittivity for Rain Medium

The dielectric constant for rain medium is investigated by utilizing the system identification method. The rain rate model and frequency model of permittivity in millimeter waves band for rain medium are presented. The results obtained with models are in very good agreement with references in calculating the attenuation of electromagnetic waves induced by rain, which Shows that the obtained models are valid and practicable. The cross-polar discrimination gotten with rain rate model is in agreement with references.     

Single to 16-Channel Wavelength Conversion at 10 Gb/s Based on Cross-Gain Modulation of ASE Spectrum in SOA

A simple scheme for single to multi-channel wavelength conversion based on cross-gain modulation of amplified spontaneous emission (ASE) spectrum in semiconductor optical amplifier (SOA) is described. Single to 16-channel wavelength conversion at 10 Gb/s is first demonstrated without any additional probe lights, the modulation information carried by input signal could be converted into arbitrary many channels if only the demultiplexer with enough channels is exploited. Output performance and pattern effects are investigated experimentally.     

半导体激光器发射光谱实验仪

设计了一种半导体激光器发射光谱实验仪 ,可以用来观测LD发射的荧光光谱、激光光谱 ,以及了解光栅外腔选取单纵模、压窄线宽、波长调谐的机理 .该实验仪结构紧凑 ,物理概念清晰 ,适用于大专院校的光学实验教学     

Buckling of a stiff thin film on a compliant substrate in large deformation

A finite-deformation theory is developed to study the mechanics of thin buckled films on compliant substrates. Perturbation analysis is performed for this highly nonlinear system to obtain the analytical solution. The results agree well with experiments and finite element analysis in wavelength and amplitude. In particular, it is found that the wavelength depends on the strain. Based on the accurate wavelength and amplitude, the membrane and peak strains in thin films, and stretchability and compressibility of the system are also obtained analytically.     

Multi-layer thin films/substrate system subjected to non-uniform misfit strains

Current methodologies used for the inference of thin film stress through curvature measurement are strictly restricted to stress and curvature states that are assumed to remain uniform over the entire film/substrate system. These methodologies have recently been extended to a single layer of thin film deposited on a substrate subjected to the non-uniform misfit strain in the thin film. Such methodologies are further extended to multi-layer thin films deposited on a substrate in the present study. Each thin film may have its own non-uniform misfit strain. We derive relations between the stresses in each thin film and the change of system curvatures due to the deposition of each thin film. The interface shear stresses between the adjacent films and between the thin film and the substrate are also obtained from the system curvatures. This provides the basis for the experimental determination of thin film stresses in multi-layer thin films on a substrate.