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81.
Selected imines and one bis-imine react via their enamine tautomers with terminal perfluorinated epoxides, e.g. hexafluoropropene oxide to produce fluorinated enamino ketones or imino ketones. In contrast, internal perfluorinated linear epoxides and one cyclic epoxide yield intermediate imino alcohols, which in one case added hexafluoroacetone, furnishing a new imino diol investigated by X-ray diffraction.  相似文献   
82.
One of the most interesting compounds in sulfur nitrogen fluorine chemistry is NSF2NS(O)F2 (3) (reported by Glemser and Höfer 30 years ago): in the NS backbone a triple and a double bond are connected by a single bond. Electrophiles (metal cations, fluoro Lewis acids, “CH3+”) attack this multifunctional system exclusively at the thiazyl nitrogen of the triple bond. [M(NSF2NS(O)F2)4][AsF6]2 (M = Ni (4b), Cu (4c)), [Re(CO)5(NSF2NS(O)F2)][AsF6] (5), F5A·NSF2NS(O)F2 (A = As (6), Sb (7)), F3B·NSF2NS(O)F2 (8) and [H3CNSF2NS(O)F2]+[AsF6] (9) were isolated. The X-ray structures of 4c, 6, 8 and 9 are reported, bonding in these complexes is compared with the recently reported related NSAr2NS(X)Ar2 (X = O, NH) species.  相似文献   
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The first AlkNSNHetF sulfur diimide 6 (Alk=adamant-1-yl, HetF=2,3,5,6-tetrafluoropyrid-4-yl) was prepared by trapping of the corresponding alkylthiazylamide [AlkNSN]3 with pentafluoropyridine, followed by X-ray structural characterization. For 6, the Z,E configuration was found. From the reaction of 3 with octafluoronaphthalene, hexafluorinated naphthothiadiazole 7 was isolated along with the parent AlkNH2.  相似文献   
86.
[1,2,5]Thiadiazolo[3,4-c][1,2,5]thiadiazole (1) is synthesized in 62% yield by fluoride ion-induced condensation of 3,4-difluoro-1,2,5-thiadiazole with (Me(3)SiN=)(2)S. The reversible electrochemical reduction of 1 leads to the long-lived [1,2,5]thiadiazolo[3,4-c][1,2,5]thiadiazolidyl radical anion (2) and further to the dianion (3). The radical anion 2 is also obtained by the chemical reduction of the precursor 1 with t-BuOK in MeCN. The radical anion 2 is characterized by ESR spectroscopy in solution and in the crystalline state. The stable salts [K(18-crown-6)][2] and [K(18-crown-6)][2].MeCN (8 and 9, respectively) are isolated from the spontaneous decomposition of the [K(18-crown-6)][PhXNSN] (6, X = S; 7, X = Se) salts in MeCN solution followed by XRD characterization. The radical anion 2 acts as a bridging ligand in 8 and as chelating ligand in 9. The structural changes observed by XRD in going from 1 to 2 are explained by means of DFT/(U)B3LYP/6-311+G calculations.  相似文献   
87.
The synthesis of TAS+ C3N3F4- (1) (TAS+ = (Me2N)3S+) and the reactions of 1 with Me3SiOSiMe3 and Me3SiCF3 to give TAS+ C3N3F2O- (2) and TAS+[(NCF)(NCCF3)(NC(CF3)(2)]- (4) are reported. An isomer of 4, TAS+[(NCCF3)2(NCFCF3)]-, compound 6, was obtained by fluoride ion addition to (CF3CN)3. From the reactions with Me3SiNMe2 neutral fluoroamino triazines C3N3Fn(NMe2)(n-1) (n = 1, 2) were isolated. Possible reaction pathways are discussed, the X-ray structures of 1, 2, 4 and 6 were determined.  相似文献   
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Abstract  

The crystal structures of 2,5-bis(trifluoroacetyl)cyclohexane-1,4-dione (1) and o,o′-bis(trifluoroacetyl)-p-cresol (2) is reported. The first compound crystallizes in monoclinic space group P21/n with a = 6.5040(10), b = 10.1610(10), c = 8.2420(10) ?, β = 91.690(10)° and V = 0.54445(12) nm3. Double enolization (U-structure) with a considerable electron density delocalization in the enolone backbone was established in this case. Phenol 2 crystallizes in triclinic space group P-1 with a = 7.0690(10), b = 9.4890(10), c = 9.8190(10) ?, α = 103.720(10), β = 110.760(10), γ = 102.150(10)° and V = 0.56598(12) nm3. In contrast to CDCl3 solution, a “bifurcate” structure of 2 with jumping OH proton is quenched: only one of both trifluoroacetyl moieties is bonded by intramolecular hydrogen bond.  相似文献   
90.
The self-organized growth of crystalline silicon nanodots and their structural characteristics are investigated. For the nanodot synthesis, thin amorphous silicon (a-Si) layers with different thicknesses have been deposited onto the ultrathin (2 nm) oxidized (111) surface of Si wafers by electron beam evaporation under ultrahigh vacuum conditions. The solid phase crystallization of the initial layer is induced by a subsequent in situ annealing step at 700 °C, which leads to the dewetting of the initial a-Si layer. This process results in the self-organized formation of highly crystalline Si nanodot islands. Scanning electron microscopy confirms that size, shape, and planar distribution of the nanodots depend on the thickness of the initial a-Si layer. Cross-sectional investigations reveal a single-crystalline structure of the nanodots. This characteristic is observed as long as the thickness of the initial a-Si layer remains under a certain threshold triggering coalescence. The underlying ultra-thin oxide is not structurally affected by the dewetting process. Furthermore, a method for the fabrication of close-packed stacks of nanodots is presented, in which each nanodot is covered by a 2 nm thick SiO2 shell. The chemical composition of these ensembles exhibits an abrupt Si/SiO2 interface with a low amount of suboxides. A minority charge carrier lifetime of 18 µs inside of the nanodots is determined.  相似文献   
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