In‐line monitoring of UV photopolymerization with a quartz crystal resonator

An in‐line monitoring device using a quartz crystal resonator for thin film polymerization was proposed, and its performance has been evaluated by implementing in the UV polymerization of 2‐hydroxyethyl methacrylate with a photoinitiator of 1‐chloroanthraquinone. Because the variation of resonant resistance of the resonator is proportional to the square root of viscosity change that is closely related to the polymerization degree, the resistance can be used as a measure of the polymerization degree. The resistance measurements were compared with the outcome of instrumental analyses of polymerization degree using an FTIR spectrometer and a gel permeation chromatograph. The experimental results showed that the resistance measurements were consistent with the experimental outcome of the instrumental analyses, and this indicates the effectiveness of the proposed device. Owing to the simplicity and availability of the resonator system, its wide utilization in the monitoring of a variety of film polymerization processes, including photoresistor application, is expected. © 2006 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 44: 2428–2439, 2006     

Measurement and prediction of solubilities and diffusion coefficients of carbon dioxide in starch–water mixtures at elevated pressures

The solubility and diffusion coefficient of carbon dioxide in intermediate‐moisture starch–water mixtures were determined both experimentally and theoretically at elevated pressures up to 16 MPa at 50 °C. A high‐pressure decay sorption system was assembled to measure the equilibrium CO₂ mass uptake by the starch–water system. The experimentally measured solubilities accounted for the estimated swollen volume by Sanchez–Lacombe equation of state (S‐L EOS) were found to increase almost linearly with pressure, yielding 4.0 g CO₂/g starch–water system at 16 MPa. Moreover, CO₂ solubilities above 5 MPa displayed a solubility increase, which was not contributed by the water fraction in the starch–water mixture. The solubilities, however, showed no dependence on the degree of gelatinization (DG) of starch. The diffusion coefficient of CO₂ was found to increase with concentration of dissolved CO₂, which is pressure‐dependent, and decrease with increasing DG in the range of 50–100%. A free‐volume‐based diffusion model proposed by Areerat was employed to predict the CO₂ diffusivity in terms of pressure, temperature, and the concentration of dissolved CO₂. S‐L EOS was once more used to determine the specific free volume of the mixture system. The predicted diffusion coefficients showed to correlate well with the measured values for all starch–water mixtures. © 2005 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 44: 607–621, 2006     

Local chemical distribution and electronic structure of Ge1−xTx DMS single crystals (T=Cr,Mn, Fe)

The spatial concentration distribution and local electronic structure of ferromagnetic Ge_1−xT_x (T=Cr, Mn, Fe) DMS single crystals have been investigated by using scanning photoelectron microscopy (SPEM), X-ray absorption spectroscopy (XAS), and photoemission spectroscopy (PES). It is found that doped T ions in Ge_1−xT_x crystals are chemically phase-separated, suggesting that the observed ferromagnetism arises from the phase-separated T-rich phases in Ge_1−xT_x.     

基于CT算法的束团横向相空间测量

精确测量束团的发射度和横向相空间, 在高亮度电子束的产生和应用中具有重要意义. 传统测量方法在测量发射度时需要对束团在相空间内分布进行初始假设, 且只能给出相椭圆的twiss参数;基于CT(computerized tomography)算法的束团横向相空间测量方法无需先验假设, 能给出粒子在相空间内的真实分布, 测量结果更为精确. 介绍了基于CT算法的束团横向相空间测量的原理和初步实验结果, 并与四极透镜扫描法测量的结果进行了比较.     

三种瓜环与4,4′-联吡啶及N,N′-二甲基4,4′-联吡啶盐酸盐相互作用的研究

以七元瓜环(Q[7])和新型椭圆型改性瓜环———对称四甲基取代六元瓜环(TM eQ[6])为主体,4,4′-联吡啶的盐酸盐(44)以及N,N′-二甲基4,4′-联吡啶的盐酸盐(dm44)为客体的主客体相互作用进行了考察.实验结果表明,Q[7]与客体44及dm44作用体系中,客体为了更有效地被主体Q[7]包结,在Q[7]内腔中呈倾斜状分布的几率最高.用核磁共振、循环伏安以及紫外吸收光谱对实验结果进行了印证和补充,验证了TM eQ[6]与客体44及dm44可发生较强的相互作用,形成一维的自组装超分子结构.核磁共振以及循环伏安方法的实验结果表明,没有观察到Q[6]与客体44及dm44的明显作用,而紫外吸收光谱方法证实,Q[6]与客体44确实存在一定的相互作用,比较主客体的结构特征,该作用体系也可能存在自组装的一维超分子结构等多种作用形式.     

Optical properties of In2O3 oxidized from InN deposited by reactive magnetron sputtering

Unintentionally doped and zinc-doped indium nitride (U-InN and InN:Zn) films were deposited on (0 0 0 1) sapphire substrates by radio-frequency reactive magnetron sputtering, and all samples were then treated by annealing to form In₂O₃ films. U-InN and InN:Zn films have similar photon absorption characteristics. The as-deposited U-InN and InN:Zn film show the absorption edge, ∼1.8-1.9 eV. After the annealing process at 500 °C for 20 min, the absorption coefficient at the visible range apparently decreases, and the absorption edge is about 3.5 eV. Two emission peaks at 3.342 eV (371 nm) and 3.238 eV (383 nm) in the 20 K photoluminescence (PL) spectrum of In₂O₃:Zn films were identified as the free-exciton (FE) or the near band-to-band (B-B) and conduction-band-to-acceptor (C-A) recombination, respectively.     

具有HfN/HfO2栅结构的p型MOSFET中的负偏置-温度不稳定性研究

研究了HfN/HfO₂高K栅结构p型金属-氧化物-半导体(MOS)晶体管(MOSFET)中，负 偏置-温度应力引起的阈值电压不稳定性(NBTI)特征.HfN/HfO₂高K栅结构的等效 氧化层厚度(EOT)为1.3nm，内含原生缺陷密度较低.研究表明，由于所制备的HfN/HfO₂ 高K栅结构具有低的原生缺陷密度，因此在p-MOSFET器件中观察到的NBTI属HfN/HfO2高K栅结构的本征特征，而非工艺缺陷引起的；进一步研究表明，该HfN/HfO₂高K栅结构中观察到的NBTI与传统的SiO₂基栅介质p-MOSFET器件中观察 到的NBTI具有类似的特征，可以被所谓的反应-扩散(R-D)模型表征： HfN/HfO₂ 栅结构p-MOSFET器件的NBTI效应的起源可以归为衬底注入空穴诱导的界面反应机理，即在负 偏置和温度应力作用下，从Si衬底注入的空穴诱导了Si衬底界面Si-H键断裂这一化学反应的 发生，并由此产生了Si^＋陷阱在Si衬底界面的积累和H原子在介质层内部的扩散 ，这种Si^＋陷阱的界面积累和H原子的扩散导致了器件NBTI效应的发生. 关键词： 高K栅介质 负偏置-温度不稳定性(NBTI) 反应-扩散(R-D)模型     

对薄层柱壳爆炸膨胀断裂过程的研究

 本文提出了一个用于描述动态破坏发展过程的损伤度函数。从这个损伤度函数出发,把材料特征性方程取为强化粘塑性本构方程形式,导出了薄层柱壳爆炸膨胀运动在两种近似下（恒定膨胀速度近似合恒定应变速率近似）断裂判据的解析表达式。结果分析表明,在上述条件下,存在着一个动态断裂“塑性峰”,在这个峰值条件的应变率下,柱壳出现贯穿断裂时刻的应变最大。以软钢为算例,本断裂判据可以比较好地解释Иванов和陈大年等给出的实验结果。这时,动态断裂“塑性峰”对应的应变率为4×10⁴ s^-1,相应的应变约为60%~80%。