水平管外强化凝结传热的数值解

以Nusselt理论为基础,运用三维坐标建立了肋片侧面的冷凝传热模型,对肋片侧面的冷凝传热机理进行了分析,得出了肋片侧面表面传热系数的积分表达式。利用此法对水平环肋单管表面传热系数进行计算并将结果与传统解法进行比较。     

大焦深成像系统仿真实验研究

如何增大非相干光学成像系统的焦深是应用光学研究领域的热点问题.本文对采用高次非球面光学掩模板与图像处理相结合增大成像光学系统焦深的新方法进行了深入分析,建立了大焦深成像系统仿真实验模型,并进行了大焦深成像系统仿真实验.实验结果证明了该方法在维持原相对孔径的同时使光学系统在较大的离焦范围内有好的成像质量.实际应用中还要综合考虑模板参量、信噪比等关键因素.     

丹聂耳电池电动势产生的机理

 1836年,英国化学家丹聂耳(Daniell)发明了一种原理上最简单的化学电池,通常称之为丹聂耳电池。电动势是化学电池的一个重要的性能参数。而电动势等于单位正电荷由负极通过电池内部移到正极时电池内非静电力(化学力)所做的功。它取决于电极材料的化学性质,与电池的大小无关。因此,本文就从物理化学角度来探讨丹聂耳电池电动势产生的机理。丹聂耳电池的结构如图1所示。电池的两个电极锌板和铜板分别浸在ZnSO₄溶液和CuSO₄溶液中。     

Analysis of Three Coupled Defects in One-Dimensional Photonic Bandgap Structure

The mutual interaction of three different defects in photonic crystals is studied theoretically. A theoretical model based on the classical wave analogue of the tight-binding （TB） picture is applied to the structure. We obtain analytic expressions for the eigenfrequencies and eigenmodes, from which the transmissions at resonance are derived. Based on this, a new type of the photonic quantum-well structure is investigated and its possible application is discussed. The TB predictions are compared with the transfer matrix method simulation results.     

空间雷电探测实时采集定位系统

星载雷电探测定位系统是利用光学探测器探测闪电事件的地理位置和光脉冲波形，系统采用CPLD+DSP的数字图像处理方案，利用了CPLD复杂逻辑可编程特性将系统的部分或全部功能集成在一片CPLD上，减小了系统硬件复杂程度，节省了印制版空间.利用DSP高速数字信号处理特性完成实时处理图像数据的功能.系统用CPLD完成图像信号的采集、编码和存储控制,缩小了星载设备体积，简化了电路结构；用DSP完成大量图像数据处理工作，提高了系统工作的实时性.     

Laves相贮氢合金及其在Ni／MH电池中的研究进展

Ｌａｖｅｓ相贮氢合金是目前贮氢材料研究与开发的热点之一。本文概述了Ｌａｖｅｓ相合金的结构、贮氢机理、贮氢性能以及它在Ｎｉ／ＭＨ电池应用中的最新进展。     

Effects of Dual-Electrode Biasing on Er in a Toroidal Plasma

Two externally biased electrodes were inserted into the plasma on the KT-5C tokamak to test the effects on modifying the radial electric field Er, other than single biasing. Using various combinations of biasing voltage,the influences of double biasing are compared with the single biasing. It turns out that the effect of dual-biasing is also effective as a single one, but the outer electrode seems to be shielded by the inner one and show less influence. The results clearly show that the radial electric field Er changed by external biasing is intrinsically an effect localized at the edge of the plasma, which is caused by the electrode induced radial current; and dualelectrode biasing using the method similar to the single biasing seems not to be able to increase more distinctly the peaking effect on Er than the single biasing.     

Reduction of Dislocations in GaN Epilayer Grown on Si （111） Substrates using a GaN Intermedial Layer

GaN intermedial layers grown under different pressures are inserted between GaN epilayers and AIN/Si（111） substrates. In situ optical reflectivity measurements show that a transition from the three-dimensional （3D） mode to the 2I） one occurs during the GaN epilayer growth when a higher growth pressure is used during the preceding GaN intermedial layer growth, and an improvement of the crystalline quality of GaN epilayer will be made. Combining the in situ reflectivity and transmission electron microscopy （TEM） measurements, it is suggested that the lateral growth at the transition of growth mode is favourable for bending of dislocation lines, thus reducing the density of threading dislocations in the epilayer.