环丙氟沙星荧光探针对小牛胸腺DNA相互作用的研究

使用紫外和荧光光谱法研究了环丙氟沙星(CIF)和小牛胸腺DNA(ctDNA)之间的相互作用。在pH 7.0磷酸盐缓冲液中,CIF在270 nm激发和在420 nm处有很强的荧光发射。它们间的沟槽作用导致小牛胸腺ctDNA对CIF的荧光存在着很强的猝灭作用,猝灭常数为2.64×104 mol-1L(25 ℃)。利用ctDNA对CIF的荧光猝灭作用建立了核酸测定的新方法,线性范围为80 nmol·L-1～45 μmol·L-1,对25 μmol·L-1ctDNA的相对标准偏差为4.2％。     

准气相反应法中煅烧温度对ZrO2微球结构特性的影响

采用新颖的准气相反应法, 合成出了球形度好、表面光滑的ZrO₂微球. 通过对产物的SEM, TEM和XRD表征, 研究了煅烧温度对ZrO₂球结构特性的影响. 结果表明: 经600～800 ℃煅烧后, 生长完好的ZrO₂球, 其显微结构为均匀多孔结构, 纳米晶粒呈花生样的长条形状; ZrO₂球的相由主要的立方相和少量的四方相组成.     

Ba0.95Ce0.9Y0.1O3-α固体电解质的氧离子导电性

Ba_0.95Ce_0.9Y_0.1O_3-α solid electrolyte was prepared by high temperature solid state reaction. The electrochemical oxygen permeation (oxygen pumping) rates and oxide ion transport number in this electrolyte were detected in the temperature of 600～1000℃ . It was found that this electrolyte exhibited the oxide ion conduction with the oxide ion transport number of 0.3～0.5.     

邻苯二酚紫修饰电极示差脉冲伏安法测定水中铝

利用吸附的方法在热解石墨电极上制得邻苯二酚紫(PCV)修饰电极。在NH~3.H~2O-NH~4Cl底液(pH8.5)中,该电极具有很好的电化学活性,其示差脉冲氧化峰电位为E~p~a=+80mV。对铝进行检测,只是峰电流降低,而峰电位不变,氧化峰电流的降低值与铝浓度在1×10^-^8-1×10^-^7mol.dm^-^3和1×10^-^7-1×10^-^6mol.dm^-^3范围内成正比,检测限为5×10^-^9mol.dm^-^3,标准偏差为5.0%(4×10^-^8mol.dm^-^3Al,n=8),对实际水样进行测定,结果令人满意。对其检测机理进行了研究后认为:(1)PCV修饰电极表面是PCV单分子层吸附,具有很好的电化学活性;(2)铝与PCV在电极表面形成一1:3的配合物,该配合物在修饰电极上本身没有电化学活性,仅覆盖住原有的PCV电活性点,从而使峰电流降低,而峰电位没有变化;因此,在有铝和无铝时,电极过程没有变化,都对应于PCV的电化学行为。我们用电化学方法、扫描电镜、X射线光电子能谱和X射线荧光光谱法对此进行了证明。     

矩形箱梁力学性能分析的修正计算方法

本文对矩形箱梁翼板设置了不同的剪滞翘曲位移差函数,继而综合考虑剪力滞效应、剪切变形以及剪滞翘曲应力和弯矩自平衡条件等因素,且以能量变分原理为基础建立了矩形箱梁的弹性控制微分方程和自然边界条件,基于此修正了现行薄壁结构分析方法。与传统剪滞理论相比,本文方法深刻反映了矩形箱梁的力学特性。研究表明,(1)由于剪滞翘曲应力和弯矩自平衡条件的引入,矩形箱梁力学性能分解为独立的初等梁理论和剪滞理论体系,且箱梁力学性能为两者的叠加效应;(2)矩形箱梁断面尺寸确定,剪滞效应对其正应力的影响值不变,即剪滞效应的竖向力学行为与箱梁跨径无关;(3)尽管矩形箱梁的梁高对箱形梁剪滞翘曲应力和初等梁理论的应力值皆有一定影响,但其剪力滞系数不变,因此剪力滞效应与梁高无关;(4)剪力滞效应不仅影响箱梁翼板力学性能,而且对其腹板力学行为的影响不可忽视。因而,与传统剪滞理论相比,本文修正法不仅计算精度明显提高,而且更能真实反映矩形箱梁的力学性能。     

Cu(CMQA)(H2O)配合物修饰电极作为识别和测定变性核酸的电化学探针

合成了N-羧甲基-L-蛋氨酸-N-′8-喹啉酰胺与铜(Ⅱ)的配合物[Cu(CMQA)(H2O)],并将它修饰于玻碳电极上。用循环伏安法检验了该修饰电极的电化学特性,发现在pH 5.0的乙酸盐缓冲底液中,电极对变性核酸(ssDNA)具有电化学活性;在循环伏安图上于(Epa)180 mV及(Epc)320 mV处出现氧化还原电位峰;并发现ssDNA的浓度变化引起其峰电流的变化。当用差示脉冲伏安法(DPV)试验ssDNA浓度与峰电流的关系时,结果表示随ssDNA浓度的增加,峰电流(ip)也随之增加,且ssDNA浓度在0.05~9.0 mg.L-1范围内与ip值的增加呈线性关系。但以小牛胸腺DNA(ctDNA)及鱼精RNA(yRNA)作试验时,其浓度变化不引起峰电流的变化,在此基础上建立了一种测定ssDNA的新方法。应用于合成试样分析时,根据结果算得方法的检出限(3σ)为25μg.L-1,回收率在95%~105%之间。     

Continuous non-autonomous memristive Rulkov model with extreme multistability

Based on the two-dimensional (2D) discrete Rulkov model that is used to describe neuron dynamics, this paper presents a continuous non-autonomous memristive Rulkov model. The effects of electromagnetic induction and external stimulus are simultaneously considered herein. The electromagnetic induction flow is imitated by the generated current from a flux-controlled memristor and the external stimulus is injected using a sinusoidal current. Thus, the presented model possesses a line equilibrium set evolving over the time. The equilibrium set and their stability distributions are numerically simulated and qualitatively analyzed. Afterwards, numerical simulations are executed to explore the dynamical behaviors associated to the electromagnetic induction, external stimulus, and initial conditions. Interestingly, the initial conditions dependent extreme multistability is elaborately disclosed in the continuous non-autonomous memristive Rulkov model. Furthermore, an analog circuit of the proposed model is implemented, upon which the hardware experiment is executed to verify the numerically simulated extreme multistability. The extreme multistability is numerically revealed and experimentally confirmed in this paper, which can widen the future engineering employment of the Rulkov model.     

基于SPR原理的葡萄糖浓度折射率特性矩阵测量（英文）

设计了一种简洁的角度扫描棱镜SPR传感系统,反射式平行光路设计简化了系统结构。其主要包括光源及光强感知、平行光路结构、电机与温度控制模块构成。通过单电机扫描入射角与温度控制,实现了对葡萄糖的折射率浓度特性有效测量。理论分析存在交叉灵敏度矩阵可同时度量温度及葡萄糖质量浓度共振角度的变化规律,且实验得其灵敏矩阵。为区分温度和质量浓度对共振角度的影响以及校正SPR温度漂移提供参考。     

Threshold flux-controlled memristor model and its equivalent circuit implementation

Modeling a memristor is an effective way to explore the memristor properties due to the fact that the memristor devices are still not commercially available for common researchers. In this paper, a physical memristive device is assumed to exist whose ionic drift direction is perpendicular to the direction of the applied voltage, upon which, corresponding to the HP charge-controlled memristor model, a novel threshold flux-controlled memristor model with a window function is proposed. The fingerprints of the proposed model are analyzed. Especially, a practical equivalent circuit of the proposed model is realized, from which the corresponding experimental fingerprints are captured. The equivalent circuit of the threshold memristor model is appropriate for various memristors based breadboard experiments.