Courants caractéristiques et analyse de SEREigen currents and RCS analysis

In this Note, we return to the theory of characteristic modes which was introduced 30 years ago for electromagnetic scattering problems. A simple mathematical framework is proposed and complete definitions are given. The potential interest of this theory in terms of Radar Cross Section (RCS) analysis is then discussed, especially in the low frequency case. Finally, a 3-D example is presented to illustrate the efficiency of this decomposition. To cite this article: Y. Morel et al., C. R. Mecanique 332 (2004).     

Space–time integrated least squares: a time‐marching approach

A time‐marching formulation is derived from the space–time integrated least squares (STILS) method for solving a pure hyperbolic convection equation and is numerically compared to various known methods. Copyright © 2004 John Wiley & Sons, Ltd.     

Photothermal microanalysis of thermal discontinuities in metallic samples

Modeling the behavior of a protective coating during a thermal shock not only requires the knowledge of its own thermophysical characteristics, but also those of the coating–substrate discontinuity. According to its nature, this discontinuity can be modeled as a zero-thickness interface (thermal contact resistance) or a finite thickness layer (thermal third body). This paper presents an experimental device and two associated thermal transfer models developed in view of the microscale characterization of such discontinuities.     

Geometric modeling of homoepitaxial CVD diamond growth: I. The {1 0 0}{1 1 1}{1 1 0}{1 1 3} system

Plasma-assisted CVD homoepitaxial diamond growth is a process that must satisfy many stringent requirements to meet industrial applications, particularly in high-power electronics. Purity control and crystalline quality of the obtained samples are of paramount importance and their optimization is a subject of active research. In the process of such studies, we have obtained high purity CVD diamond monocrystals with unusual morphologies, namely with apparent {1 1 3} stable faces. This phenomenon has led us to examine the process of CVD diamond growth and build up a 3D geometrical model, presented here, describing the film growth as a function of time. The model has been able to successfully describe the morphology of our obtained crystals and can be used as a predictive tool to predetermine the shape and size of a diamond crystal grown in a given process configuration. This renders accessible control of desirable properties such as largest usable diamond surface area and/or film thickness, before the cutting and polishing manufacture steps take place. The two latter steps are more sensitive to the geometry of the growth sectors, which will be addressed in a companion paper.Our model, applicable to the growth of any cubic lattice material, establishes a complete mapping of the final morphology state of growing diamond, as a function of the growth rates of the crystalline planes considered, namely {1 0 0}, {1 1 1}, {1 1 0}, and {1 1 3} planes, all of which have been observed experimentally in diamond films. The model makes no claim as to the stability of the obtained faces, such as the occurrence of non-epitaxial crystallites or twinning. It is also possible to deduce transient behavior of the crystal morphology as growth time is increased. The model conclusions are presented in the form of a series of diagrams, which trace the existence (and dominance) boundaries of each face type, in presence of the others, and where each boundary crossing represent a topology change in terms of number of faces, edges and vertices. We validate the model by matching it against crystals published in the literature and illustrate its predictive value by suggesting ways to increase usable surface area of the diamond film.     

Positive value of information in games

We exhibit a general class of interactive decision situations in which all the agents benefit from more information. This class includes as a special case the classical comparison of statistical experiments à la Blackwell. AMS 2000 Subject Classification:Primary 91A35.The work of Bruno Bassan and Marco Scarsini was partially supported by MIUR-COFIN. The authors express their thanks to Sylvain Sorin for enlightening comments.     

Properties of levels in22Ne

Levels up to 9.3 MeV excitation in²²Ne were studied with the¹⁹ F(α, pγ) ²²Ne reaction atE _α = 12 MeV. Level energies, branching ratios, mean lifetimes, spins and mixing ratios were obtained for a number of levels. Relevant results are compared with many-particle shell-model calculations.     

Access to Paullone Analogues by Intramolecular Heck Reaction

The syntheses of paullone ( 1a ) and three paullone derivatives, including a sulfur analogue ( 2a ), a tricyclic derivative ( 2b ), and a ring‐enlarged variant ( 2c ), are described, Pd‐catalyzed intramolecular Heck reaction being the key step. The kinase‐inhibitory properties of the novel paullone analogues were investigated.     

Optimal asset allocation for pension funds under mortality risk during the accumulation and decumulation phases

In a financial market with one riskless asset and n risky assets whose prices are lognormal, we solve in a closed form the problem of a pension fund maximizing the expected CRRA utility of its surplus till the (stochastic) death time of a representative agent. We consider a unique asset allocation problem for both accumulation and decumulation phases. The optimal investment in the risky assets must decrease during the first phase and increase during the second one. We accordingly suggest it is not optimal to manage the two phases separately, and outsourcing of allocation decisions should be avoided in both phases. JEL: G23, G11 MSC 2000: 62P05, 91B28, 91B30, 91B70, 93E20     

The ALTO project at IPN-Orsay

The availability of both a tandem deuteron beam and a linac electron beam, the latter converted into Bremsstrahlung, at the new ALTO facility at IPN-Orsay offers a unique opportunity to compare the performance of a laser ion guide under different regimes. The ALTO accelerator has delivered its first electron beam at the end of 2005 and a design for a gas-cell prototype is being studied.