Electrical Resistivity Training Effect in the Exchange-Biased GdBaCo2O5.5 Cobaltite

Journal of Experimental and Theoretical Physics - The nature of the training effect in exchange-biased compounds is studied. This effect consists in a decrease in the exchange bias field (HEB)...     

Synthesis,characterization, and transport properties of Nafion-polypyrrole membrane for direct methanol fuel cell (DMFC) application

Journal of Solid State Electrochemistry - Due to their distinctive chemical, electronic, and environmental properties, polypyrrole is used as a blocking barrier for methanol leakage in direct...     

On Anomalous Dissipation in the Plasma of the Dusty Lunar Exosphere

JETP Letters - One of the main features of the dusty plasma compared to the conventional plasma (without charged dust particles is anomalous dissipation that is caused by the charging of dust...     

Function of the Non-Crystalline X-Ray Amorphous Phase of Highly Dispersed Powder of CaO in Adsorption of CO2 and H2O

Russian Journal of General Chemistry - Highly dispersed CaO has been synthesized by heating an aqueous solution of calcium nitrate and D-glucose up to 800°C. Calcium oxide is formed with an...     

Chiral 7-Oxabicyclo[2.2.1]heptane Building Blocks for Prostanoids

Russian Journal of Organic Chemistry - Methyl (Z)-3-[(2R,3R,4S,5S)-5-(2-methoxy-2-oxoethyl)-3,4-(isopropylidenedioxy)tetrahydrofuran-2-yl]-prop-2-enoate was synthesized, and its intramolecular...     

Metamorphic InAs(Sb)/InGaAs/InAlAs nanoheterostructures grown on GaAs for efficient mid-IR emitters

High-efficiency semiconductor lasers and light-emitting diodes operating in the 3–5?μm mid-infrared (mid-IR) spectral range are currently of great demand for a wide variety of applications, in particular, gas sensing, noninvasive medical tests, IR spectroscopy etc. III-V compounds with a lattice constant of about 6.1?Å are traditionally used for this spectral range. The attractive idea to fabricate such emitters on GaAs substrates by using In(Ga,Al)As compounds is restricted by either the minimum operating wavelength of ～8?μm in case of pseudomorphic AlGaAs-based quantum cascade lasers or requires utilization of thick metamorphic In_xAl_1-xAs buffer layers (MBLs) playing a key role in reducing the density of threading dislocations (TDs) in an active region, which otherwise result in a strong decay of the quantum efficiency of such mid-IR emitters. In this review we present the results of careful investigations of employing the convex-graded In_xAl_1-xAs MBLs for fabrication by molecular beam epitaxy on GaAs (001) substrates of In(Ga,Al)As heterostructures with a combined type-II/type-I InSb/InAs/InGaAs quantum well (QW) for efficient mid-IR emitters (3–3.6?μm). The issues of strain relaxation, elastic stress balance, efficiency of radiative and non-radiative recombination at T?=?10–300?K are discussed in relation to molecular beam epitaxy (MBE) growth conditions and designs of the structures. A wide complex of techniques including in-situ reflection high-energy electron diffraction, atomic force microscopy (AFM), scanning and transmission electron microscopies, X-ray diffractometry, reciprocal space mapping, selective area electron diffraction, as well as photoluminescence (PL) and Fourier-transformed infrared spectroscopy was used to study in detail structural and optical properties of the metamorphic QW structures. Optimization of the growth conditions (the substrate temperature, the As₄/III ratio) and elastic strain profiles governed by variation of an inverse step in the In content profile between the MBL and the InAlAs virtual substrate results in decrease in the TD density (down to 3?×?10⁷ cm^?2), increase of the thickness of the low-TD-density near-surface MBL region to 250–300?nm, the extremely low surface roughness with the RMS value of 1.6–2.4?nm, measured by AFM, as well as rather high 3.5?μm-PL intensity at temperatures up to 300?K in such structures. The obtained results indicate that the metamorphic InSb/In(Ga,Al)As QW heterostructures of proper design, grown under the optimum MBE conditions, are very promising for fabricating the efficient mid-IR emitters on a GaAs platform.     

Synthesis of Polyol Tetrabromophthalate and Its Use as a Component for Preparing Foamed Polyurethanes of Reduced Flammability

A procedure was suggested for preparing brominated polyols of reduced viscosity for the synthesis of foamed polyurethanes of reduced flammability. The flame-retarding action of the synthesized polyol tetrabromophthalate in polyurethane was studied in comparison with that of other widely used flame retardants. Evaluation of the effect exerted on the flammability of the polurethane compound by the polyol tetrabromophthalate synthesized, melamine, and aluminum hydroxide shows that all the samples containing flame retardants are self-extinguishing. The shortest combustion time was observed for the sample containing 6% polyol tetrabromophthalate synthesized. The sample containing as a flame retardant additive solely the synthesized polyole tetrabromophthalate also exhibits the highest performance as a heat-insulating material from the viewpoint of thermal conductivity.

     

Nanostructured Crystals of Fluorite Phases Sr1 – xRxF2 + x (R Are Rare-Earth Elements) and Their Ordering. 13: Crystal Structure of SrF2 and Concentration Dependence of the Defect Structure of Nonstoichiometric Phase Sr1 – xLaxF2 + x As Grown (x = 0.11, 0.20, 0.32, 0.37, 0.47)

Crystallography Reports - The defect structure of as-grown SrF2 and nonstoichiometric phases Sr1 – xLaxF2 + x (x = 0.11, 0.20, 0.32, 0.37, 0.47) single...     

Integral Representations of a Pulsed Signal in a Waveguide

Acoustical Physics - The problem of pulsed excitation of an acoustic waveguide with a constant cross section is considered. Absorption is ignored. As the most general model of such a waveguide,...     

Formation and Characterization of Concentration Inhomogeneities in Melt-Grown Crystals

Crystallography Reports - The specific features of the formation of concentration inhomogeneities in crystals grown by the Czochralski method (GaSb:Te, Ge:Ga) and by the Bridgman method...