改进的遥感图像多种信息熵阈值分割算法

给出了一种新的图像信息量的表述方法,提出了五种基于信息熵的科学分割遥感图像的改进方法。用MATLAB对这些算法进行了实验仿真,并进行了算法性能优化。得出了各种不同算法的最佳阈值和耗时,并对它们进行了比较和分析。实验数据表明,新算法较以往的算法在分割效果和速度上都有明显的改善和提高。     

一个传送原子纠缠态的新方案

本文提出一个通过原子和腔场相互作用传送未知原子纠缠态的新方案,并且成功概率为100%.在这个方案里,我们主要利用两个原子用来接受被传送的原子纠缠态以及一个双模腔作为量子通道.由于腔场的两个模具有不同的频率和正交极化,因此这两个模能够被区分,并且处于腔场的不同区域.原子和腔场通过J-C哈密顿量发生共振相互作用,当原子和其中一个模相互作用时,另外一个模不受影响.该方案既不需要贝尔态测量,也不需要任何操作重构纠缠初态.这个方案也可以推广到传送N个原子的纠缠态.     

Optimization of Metamorphic InGaAs Quantum Wells on GaAs Grown by Molecular Beam Epitaxy

We investigate the molecular beam epitaxy growth of metamorphic InxGal-xAs materials （x up to 0.5） on GaAs substrates systematically. Optimization of structure design and growth parameters is aimed at obtaining smooth surface and high optical qualdty. The optimized structures have an average surface roughness of 0.9-1.8 nm. It is also proven by PL measurements that the optical properties of high indium content （55%） InGaAs quantum wells are improved apparently by defect reduction technique and by introducing Sb as a surfactant. These provide us new ways for growing device quality metamorphic structures on GaAs substrates with long-wavelength emissions.     

Noncontinuous Solitary Wave Solutions for Double sine-Gordon Equation

Using the tanh method and a variable separated ordinary difference equation method to solve the double sineGordon equation, we derive some new exact travelling wave solutions, especially a new type of noncontinuous solitary wave solutions. These noncontinuous solitary wave solutions are verified by using the conservation law theory.     

GaN MOS-HEMT Using Ultra-Thin A1203 Dielectric Grown by Atomic Layer Deposition

We report a GaN metal-oxide-semiconductor high electron mobility transistor （MOS-HEMT） with atomic layer deposited （ALD） Al2O3 gate dielectric. Based on the previous work [Appl. Phys. Lett. 86 （2005） 063501] of Ye et al. by decreasing the thickness of the gate oxide to 3.5nm and optimizing the device fabrication process, the device with maximum transconductance of 150mS/mm is produced and discussed in comparison with the result of lOOmS/mm of Ye et al. The corresponding drain current density in the 0.8-μm-gate-length MOS-HEMT is 800mA/mm at the gate bias of 3.0 V. The gate leakage is two orders of magnitude lower than that of the conventional A1GaN/GaN HEMT. The excellent characteristics of this novel MOS-HEMT device structure with ALD Al2O3 gate dielectric are presented.     

Gain Measurement and Anomalous Decrease of Peak Gain at Long Wavelength for InAs/GaAs Quantum-Dot Lasers

Mode gain spectrum is measured by the Fourier series expansion method for InAs/GaAs quantum-dot （QD） lasers with seven stacks of QDs at different injection currents. Gain spectra with distinctive peaks are observed at the short and long wavelengths of about 1210nm and 1300nm. For a QD laser with the cavity length of 1060μm, the peak gain of the long wavelength first increases slowly or even decreases with the injection current as the peak gain of the short wavelength increases quickly, and finally increases quickly before approaching the saturated values as the injection current further increases.     

三能级光纤激光器速率方程组的阈值解析解

 在考虑了泵浦损耗及激光损耗的情况下，解析求解了阈值泵浦下的三能级光纤激光器速率方程组，获得了泵浦功率阈值的显函数解析表达式，泵浦功率沿光纤变化的隐函数表达式，以及用功率变化表示的各个能级的粒子数密度随位置变化的显函数表达式。并利用这些表达式对光纤激光器的阈值特性进行了研究，研究表明：泵浦功率阈值随泵浦损耗系数增大而增大；激光上能级粒子数密度随归一化位置呈下降趋势，而下能级粒子数密度的变化与此相反；泵浦功率阈值越大(光纤长度越长),净增益系数随归一位置下降就越快。所获得的结果适用于单包层和双包层光纤激光器。     

基于多孔径闪烁的湍流强度廓线反演方法研究

以多孔径闪烁方法的理论为基础,分别讨论了孔径滤波函数和光谱响应函数对权重函数的影响.根据包括边界层项的Hufnagel-Valley 5/7模型得到的闪烁指数,采用奇异值分解法反演了垂直方向的湍流强度廓线,结果的量级介于10~(-15)~10~(-17)之间,并随高度的增加不断减小,在量级和趋势上与理论模型基本一致;同时结合Shack-Hartman的实际测量结果,反演了水平方向1 km传输路径上的湍流强度分布状况.水平方向反演结果的量级在10~(-14)~10~(-15)之间,随传播距离的变化趋势与实验场地的实际情况较为符合,随时间的变化趋势与合肥地区同期的统计结果基本一致.     

HNO与（HF）1≤n≤3分子间的蓝移与红移氢键

运用量子化学从头算方法研究了HNO与分子簇(HF)1≤n≤3形成的蓝移与红移氢键.在这些体系中,F…H-N都是蓝移氢键,重极化与重杂化和分子内超共轭导敛了氰键的蓝移;所有的X…H-F(X=O,N,F)氢键都是红移的,分子问超共轭导致了氢键的红移.在多分子体系形成的氢键链中,分子问超共轭作用呈现规律性递变,它导致了氢键强度与频率位移的规律性变化,电子密度拓扑分析结果反映和支持了这种规律性变化.