The concentration quenching and crystallographic sites of Eu²⁺ in Ca₂BO₃Cl

A yellow phosphor, Ca2BO3 Cl:Eu2+ , is prepared by the high-temperature solid-state method. Under the condition of excitation sources ranging from ultraviolet to visible light, efficient yellow emission can be observed. The emission spectrum shows an asymmetrical single intensive band centred at 573 nm, which corresponds to the 4f 6 5d 1 →4f 7 transition of Eu2+ . Eu2+ ions occupy two types of Ca2+ sites in the Ca2BO3 Cl lattice and form two corresponding emission centres, respectively, which lead to the asymmetrical emission of Eu2+ in Ca2 BO 3 Cl. The emission intensity of Eu2+ in Ca2BO3 Cl is influenced by the Eu2+ doping concentration. Concentration quenching is discovered, and its mechanism is verified to be a dipole–dipole interaction. The value of the critical transfer distance is calculated to be 2.166 nm, which is in good agreement with the 2.120 nm value derived from the experimental data.     

荧光粉Ca4Y6O(SiO4)6:Dy3+的制备与发光特性

采用高温固相法制备了Ca<,4>Y<,6>O(SiO<,4>)<,6>:Dy<'3+>荧光材料,通过样品的XRD谱证明了Ca<,4>Y<,6>O(SiO<,4>)<,6>:Dy<'3+>荧光材料是纯相的结构材料,通过发射光谱和激发光谱等发光特性的研究发现该荧光粉材料有多个发射峰,分别位于480 nm和573 nm处.监...     

LiBaPO4:Eu3+材料的制备及发光特性

采用高温固相法制备了LiBaPO4:Eu3+红色发光材料,研究了Eu3+掺杂浓度、电荷补偿剂等对材料发光性质的影响.结果显示,在401nm近紫外光激发下,材料呈多峰发射,分别由Eu3+的5Do→7FJ(J=0,1,2,3,4)能级跃迁产生,主峰位于619 nm;监测619 nm发射峰,所得激发光谱由O2- →Eu3+电...     

KBaPO4:Eu3+红色发光材料的光谱特性

采用高温固相法制备了KBaPO4:Eu3+红色发光材料,研究了Eu3+掺杂浓度、电荷补偿剂等对材料发光性质的影响,并利用X射线衍射及光谱等技术对材料的性能进行了表征.研究结果显示:在400 nm近紫外光激发下,材料呈多峰发射,分别由Eu3+的5D0→7FJ(J=0,1,2,3,4)能级跃迁产生,主峰位于621 nm;监...     

白光L ED s用新型荧光粉的研究进展

评述了光转换型白光L ED s用黄色荧光粉、 三基色荧光粉及白色荧光粉的研究进展, 并预测了该方向 的发展前景     

共沉淀法制备Y2O2S：Eu3+,Mg2+,Ti4+红色长余辉材料

用共沉淀法制备了Y₂O₂S:Eu³⁺,Mg²⁺,Ti⁴⁺红色长余辉材料。测量了材料的电子显微形貌、晶体结构和发射光谱。通过与固相法制备的Y₂O₂S:Eu³⁺,Mg²⁺,Ti⁴⁺长余辉材料比较,发现两种方法都可以制备粒度基本相同的纯相Y₂O₂S基质晶体,但共沉淀法样品的颗粒结构更松散。研究了Eu³⁺浓度对两种方法制备样品的谱线发射强度的影响,通过比较共沉淀法和高温固相法制备的样品中Eu³⁺的⁵D₁→⁷F₃较高能级跃迁的587.6nm谱线强度随Eu³⁺浓度的变化,发现共沉淀法更有利于Eu³⁺均匀进入Y₂O₂S基质晶格而形成有效的发光中心。     

Energy Transfer from Ce^3＋ to Eu^2＋ in LiSrBO3 and Its Potential Application in UV-LED-Based White LEDs

Ce3＋/Eu2＋ codoped LiSrBO3 phosphor is synthesized, and its luminescent characteristics are investigated. LiSrBO3：Ce3＋,Eu2＋ phosphor exhibits varied hues from blue to white and eventually to yellow by resonance-type energy transfer from Ce3＋ ion to Eu2＋ ion and tuning the relative proportion of Ce3＋/Eu2＋ properly. Energy transfer mechanism in LiSrBOa：Ce3＋, Eu2＋ phosphor is dominated by the dipole-dipole interaction, and the critical distance of the energy transfer is estimated to be about 2 nm by both spectral overlap and concentration quenching methods. Under UV radiation, white light is generated by coupling 436 and 565nm emission bands attributed to Ce3＋ and Eu2＋ radiations, respectively.     

Dy~(3+)激活的LiSrBO_3材料光谱特性研究

研究了Dy~(3+)激活的LiSrBO_3材料的光谱特性。材料的发射光谱为一多峰宽谱,主峰分别为486,578和668 nm;监测578 nm发射峰时所得材料的激发光谱为一多峰宽谱,主峰分别为331,368,397,433,462和478 nm。研究了Dy~(3+)掺杂浓度对材料发射光谱的影响,结果显示,随Dy~(3+)浓度的增大,黄、蓝发射峰强度比(Y/B)逐渐增大;同时材料的发光强度随Dy~(3+)浓度的增大呈现先增大后减小的趋势,在Dy~(3+)浓度为3 mol%时到达峰值,其浓度猝灭机理为电偶极·偶极相互作用。引入Li~+,Na~+和K~+均可提高材料的发射强度。     

写入光偏振态对Ce:KNSBN晶体衍射特性的影响

采用非同时读出条件下晶体两波耦合实验装置,以单束光入射Ce:KNSBN光折变晶体,通过改变抽运光偏振方向和品体c轴的夹角φ.系统记录了不同φ角下的抽运光透射光强I',随时间的变化情况.实验结果表明,当φ≤30°时,基本没有光扇效应;实验研究了正交偏振光写入下Ce:KNSBN晶体的两波耦合动态过程,并与e光写入下两波耦合动态过程进行了比较,发现正交偏振光写入时光扇噪声得到了明显抑制,在相同的写入参量条件下光栅的衍射效率明显提高.     

入射光参量对Ce∶KNSBN晶体中光扇效应的影响

采用非同时读出条件下晶体两波耦合实验装置,研究了入射光强度及光入射角对Ce∶KNSBN晶体中光扇效应的影响.结果表明,光扇效应存在明显的入射光强度阈值特性,入射光强度阈值为38.2 mW/cm2.对应相同的入射光强度,光入射角θ为15°时稳态光扇强度Ifsat最强,如:入射光强度为38.2 mW/cm2时,Ifsat最大为0.7 mW/cm2;入射光强度为57.3 mW/cm2时,Ifsat最大为1.8 mW/cm2.