基于最小二乘拟合的波片相位延迟测量

提出一种精密测量波片相位延迟的新方法.将待测波片置于起偏器和检偏器之间,通过步进电机控制波片匀速旋转,基于最小二乘法拟合出射光强随波片方位角变化的曲线,进而得到波片延迟.根据上述原理,建立了一套波片延迟测量系统,并分析了系统的稳定性、可测量的延迟范围、接收器件的非线性效应、系统误差源这4个影响测量精度的主要方面.结果表...     

First-Principles Study of Fe-Doped ZnO Nanowires

Using first-principles theory,we predict magnetic,electronic and optical properties in Fe-doped ZnO nanowires.The results show that ferromagnetic(FM)coupling of...     

Fast high-resolution nuclear magnetic resonance spectroscopy through indirect zero-quantum coherence detection in inhomogeneous fields

In many cases, high-resolution nuclear magnetic resonance （NMR） spectra are virtually impossible to obtain by con- ventional nuclear magnetic resonance methods because of inhomogeneity of magnetic field and inherent heterogeneity of sample. Although conventional intramolecular zero-quantum coherence （ZQC） can be used to obtain high-resolution spectrum in inhomogeneous field, the acquisition takes rather long time. In this paper, a spatially encoded intramolecular ZQC technique is proposed to fast acquire high-resolution NMR spectrum in inhomogeneous field. For the first time, the gradient-driven decoding technique is employed to selectively acquire intramolecular ZQC signals. Theoretical analyses and experimental observations demonstrate that high-resolution NMR spectral information can be retrieved within several scans even when the field inhomogeneity is severe enough to erase most spectral information. This work provides a new way to enhance the acquisition efficiency of high-resolution intramolecular ZQC spectroscopy in inhomogeneous fields.     

反位缺陷对碳化硅纳米管电子结构和光学性质影响研究

采用基于密度泛函理论的第一性原理计算对含有反位缺陷（5,5）单壁碳化硅纳米管的电子结构和光学性质进行了研究.纳米管进行结构优化的结果显示,C_Si缺陷在纳米管表面形成了凹陷,Si_C缺陷形成了凸起;反位缺陷在纳米管的导带底附近形成了缺陷能级,使纳米管表现出n型导电的特点,由价带顶到缺陷能级的跃迁,在垂直和平行于纳米管管轴方向上形成了新的介电峰.     

Fabrication and characteristics of lateral Ti/4H-SiC Schottky barrier diodes

This paper describes the fabrication and characteristics of the lateral Ti/4H-SiC Schottky barrier diodes (SBDs). SBDs are fabricated by nitrogen ion implantation into p-type 4H-SiC epitaxial layer. The implant depth profile is simulated using the Monte Carlo simulator TRIM. Measurements of the reverse I－V characteristics demonstrate a low reverse current, that is good enough for many SiC-based devices such as SiC metal-semiconductor field-effect transistors, and SiC static induction transistors. The parameters of the diodes are extracted from the forward I－V characteristics. The barrier height φ_b of Ti/4H-SiC is 0.95 eV.     

中国化学物相分析研究的新成就(上)

分两部分介绍了我国化学物相分析近十余年来研究的新成就。第一部分首先概述其前沿领域研究进展,继而对物料物质组成的相态与元素(Ag、Al、As、Au、B、Ba、Br、C、Ca、 Mg、Cd、Ce、Cl、Co、Ni、Cr、Cu、Pb和Zn等)价态分析的研究现状,分别予以简要评述。引用文献99篇。     

超高效液相色谱-四极杆/静电场轨道阱高分辨质谱法测定动物源性产品中氟吡草酮及其代谢物残留量

建立了超高效液相色谱-四极杆/静电轨道阱高分辨质谱法检测动物源性产品中氟吡草酮及其代谢物残留量的方法。样品经甲酸-乙腈溶液提取，分散固相萃取净化，以甲醇-0.2%甲酸水溶液为流动相进行梯度洗脱分离，采用高分辨质谱平行反应监测扫描模式，以正离子模式进行定性定量分析，基质匹配外标法定量。结果表明，氟吡草酮在0.002～0.2μg/L范围、其代谢物SYN503780和代谢物CSCD686480在0.1～10μg/L范围线性关系良好，相关系数均大于0.995。空白样品在低、中、高3个加标水平下的平均回收率为84.5%～107.9%,相对标准偏差(RSD,n=6)为3.5%～8.6%;方法定量限为0.01～0.5μg/kg。该方法可应用于动物源性产品中氟吡草酮及其代谢物的快速检测。