红外波片相位延迟的测试方法及精度分析

通过全面分析光强随波片方位角的变化从中优化出可适用于红外波段的确定波片延迟的方法。此方法只需读取输出光强的最大值和最小值,通过简单运算得到所测波片的相位延迟。以此为理论基础,建立了一套红外波片检测系统,此系统使用元件的数量较少,操作简单,重复性好,易于得到较高的测试精度。此外,从系统光源、光学元件到接收器件等组成部分分析了整个系统中各种误差源对测试精度的影响。结果表明,该系统的检测精度与波片延迟有关,并给出其关系曲线,由该曲线可知,当所测波片的延迟大于40ο时,该系统的仪器相对误差在1%之内,对于常用1/4和1/2波片,仪器相对误差分别为0.2%和0.01%。该检测系统的测试精度在可见和近红外波段基本保持不变。     

气相色谱-三重四极杆质谱法测定植物源性食品中棉隆及其代谢物异硫氰酸甲酯残留北大核心CSCD

基于气相色谱-三重四极杆质谱建立了同时快速测定植物源性食品中棉隆及其代谢物异硫氰酸甲酯残留量的方法。对样品前处理及色谱条件进行了优化,蔬菜、水果、谷物、坚果、茶叶和香辛料样品经乙酸乙酯提取,离心后上清液经乙二胺-N-丙基硅烷化硅胶、石墨化炭黑、十八烷基键合硅胶和无水硫酸镁分散固相萃取净化,经DB-17MS色谱柱(30 m×0.25 mm×0.25μm)分离,采用EI源,在多反应监测(MRM)模式下检测,基质匹配外标法定量。在优化实验条件下,目标化合物在0.005~1 mg/L范围内的线性关系良好,相关系数均大于0.99,方法定量限为0.01 mg/kg。空白样品在4个添加水平下的平均回收率为74.2%~117.2%,相对标准偏差(n=6)为2.8%~9.0%,方法的准确度和精密度符合农药残留测定要求。应用建立的方法对实验室日常样品大白菜、韭菜、豇豆、油麦菜、茄子、姜、芹菜、马铃薯、橙、猕猴桃、西红柿、辣椒、大米、茶叶、杏仁和孜然各6个进行检测,均未检出目标物。该方法具有操作简单、快速、灵敏、准确的特点,解决了已有方法中需采用两种前处理方法、两套设备进行检测的不足,能满足植物源食品中棉隆及其代谢物异硫氰酸甲酯的检测要求。     

反位缺陷对碳化硅纳米管电子结构和光学性质影响研究

采用基于密度泛函理论的第一性原理计算对含有反位缺陷（5,5）单壁碳化硅纳米管的电子结构和光学性质进行了研究.纳米管进行结构优化的结果显示,C_Si缺陷在纳米管表面形成了凹陷,Si_C缺陷形成了凸起;反位缺陷在纳米管的导带底附近形成了缺陷能级,使纳米管表现出n型导电的特点,由价带顶到缺陷能级的跃迁,在垂直和平行于纳米管管轴方向上形成了新的介电峰.     

Effect of Sb-doping on the morphology and dielectric properties of chrysanthemum-like ZnO nanowire clusters

Chrysanthemum-like ZnO nanowire clusters with different Sb-doping concentrations were prepared using a hydrothermal process. The microstructures, morphologies, and dielectric properties of the as-prepared products were characterized by X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), field emission environment scanning electron microscope (FEESEM), and microwave vector network analyzer respectively. The results indicate that the as-prepared products are Sb-doped ZnO single crystallines with a hexagonal wurtzite structure, the flower bud saturation degree F d is obviously different from that of the pure ZnO nanowire clusters, the good dielectric loss property is found in Sb-doped ZnO products with low density, and the dielectric loss tangent tanδ e increases with the increase of the Sb-doping concentration in a certain concentration range.     

基于动态网络模型的研发团队隐性知识转移研究

隐性知识在研发团队成员中迅速和有效的共享，对于企业开发新产品和获取竞争优势有重要意义。本文构建了研发团队隐性知识转移的动态网络模型，探讨了团队成员构成的群体网络的结构特征，对研发团队整体知识水平和知识转移速度产生的影响。并利用系统仿真，对模型的主要参数进行分析。模型为企业有效促进研发团队的隐性知识转移提供了建议。     

Electronic structure and optical properties of Nb-doped Sr2TiO4 by density function theory calculation

This paper investigates the effect of Nb doping on the electronic structure and optical properties of Sr2TiO4 by the first-principles calculation of plane wave ultra-soft pseudo-potential based on density functional theory(DFT).The calculated results reveal that due to the electron doping,the Fermi level shifts into conduction bands(CBs) for Sr2 Nb x Ti1 x O4 with x=0.125 and the system shows n-type degenerate semiconductor features.Sr2TiO4 exhibits optical anisotropy in its main crystal axes,and the c-axis shows the most suitable crystal growth direction for obtaining a wide transparent region.The optical transmittance is higher than 90% in the visible range for Sr2 Nb 0.125Ti0.875O4.     

Fermi Level Unpinning and Schottky Barrier Modification by Ti, Sc and V Incorporation at NiSi2/Si Interface

A new method is proposed to modify the Schottky barrier height （SBH） for nickel silicide/Si contact. Chemical and electrical properties for NiSi2/Si interface with titanium, scandium and vanadium incorporation are investigated by first-principles calculations. The metal/semiconductor interface states within the gap region are greatly decreased, which is related to the diminutions of junction leakage when Ti-cap is experimentally used in nickel silicide/Si contact process. It leads to an unpinning metal/semiconductor interface. The SBH obeys the Schottky-Mort theory. Compared to Ti substitution, the SBH for electrons is reduced for scandium and increases for vanadium.     

Zn1-xMgxO和Zn1-xMnxO薄膜的制备及其发光性能

采用溶胶-凝胶技术,在Si(110)衬底上制备了Mg、Mn掺杂外延生长的Zn_1-xMg_xO和Zn_1-xMn_xO薄膜,通过XRD、AFM、PL等考察不同杂质浓度对薄膜结晶质量和发光性能的影响。结果表明:Zn_1-xMg_xO和Zn_1-xMn_xO薄膜均具有较高的T_c(002)结构系数和较为光滑、平整的表面形貌。掺杂使得薄膜的紫外发光峰向短波方向移动至365 nm左右,同时Zn_1-xMn_xO薄膜的室温可见光发射得以有效地钝化,使其近带边紫外光发射与深能级可见光发射比例高达56,极大地提高了薄膜紫外发光性能。并对掺杂薄膜紫外发光蓝移和Zn_1-xMn_xO薄膜室温可见光发射的猝灭机理进行了深入探讨,得出掺杂组分为Zn_0.85Mg_0.15O、Zn_0.97Mn_0.03O时,薄膜具有最强的紫外光发射性能。     

GaN薄膜的溶胶-凝胶法制备及其表征

采用溶胶凝胶法成功地制备出氮化镓薄膜.以单质镓为镓源制备镓盐溶液、柠檬酸为络合剂制备出前驱体溶胶,再甩胶于Si(111) 衬底上,在氨气氛下热处理制备出GaN薄膜.X射线衍射（XRD）分析及选区衍射分析（SAED）表明所制备的薄膜是六角纤锌矿结构GaN薄膜;XPS分析其表面,结果显示样品中的镓元素、氮元素均以化合态存在,且Ga：N约为1：1;PL谱分析结果表明所制备的薄膜具有优良的发光性能.     

掺氮碳化硅纳米管电子结构的第一性原理研究

采用基于密度泛函理论的第一性原理计算,对本征碳化硅纳米管和掺氮碳化硅纳米管的电子结构进行了计算.计算表明本征（8,0）碳化硅为直接带隙半导体,能带间隙为0.94 eV;掺氮浓度为1.56%和3.12％的碳化硅纳米管的能带间隙减小为0.83 eV和0.74 eV.从差分电荷密度可以看出,能带间隙的减小是氮硅键与碳硅键相比共价成键能力降低的结果. 关键词： 碳化硅纳米管 掺氮 第一性原理 电子结构