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971.
The stable site of Si substitutional impurities in GaAs and AlAs at T=0 K is determined on the basis of an analysis of the energy of solution of silicon, and of the energies of formation of intrinsic defects and the reaction energies of their interaction obtained by calculating the total energy of the disordered compounds. These calculations indicate that amphotericity and vacancies have an effect on the distribution of Si. At low Si concentrations, Si in GaAs is located on the sublattice of the group III element, and in AlAs, on the sublattice of the group V element. Fiz. Tverd. Tela (St. Petersburg) 39, 264–266 (February 1997)  相似文献   
972.
We consider a nonlinear system of difference equations. This system corresponds to chains of N symmetrically connected oscillators with sufficiently general type of connection, which includes, among others, local and global connection. We prove a theorem on the existence and stability of space-time periodic solutions of such systems for sufficiently small values of the parameter of connection ?.  相似文献   
973.
974.
975.
976.
Using high-dimensional quantum error-avoiding code, we present two new quantum key distribution protocols over a collective noisy channel, i.e. six-photon and five-photon quantum error-avoiding codes. Compared with the previous protocols using four-photon and three-photon quantum error-avoiding code, the qubit efficiencies of the new protocols have increases of 16.67% and 5% respectively. In addition, the security of these protocols is analysed with a conclusion that the new protocols are much more secure than the four-photon and three-photon ones.  相似文献   
977.
One important goal of the ILIMA project at FAIR is the study of masses and decay properties of relativistic isomeric beams stored and cooled in the planned storage-ring complex. A new scheme is described, where a storage-cooler ring is used for high-resolution mass separation. Experimental results on the separation of the isobaric pair 140Pr-140Ce are presented. P. Beller, deceased.  相似文献   
978.
Capabilities of the imaging techniques, in which X-rays are converted to electrons and then the emitted electrons are registered by means of an electron microscope, are analyzed, the focus being on the factors limiting lateral resolution at the stage of electron emission. Bearing in mind the tendency to use harder synchrotron X-rays for some combined X-ray-electron microscopy methods, calculations were made for two significantly different X-ray energies: E = 1.828 keV (K-edge of Si) and E = 11.923 keV (L3-edge of Au). By using Monte Carlo simulations of the electron trajectories beneath the surface of the sample we show that the radius of the spot from which photoelectrons are emitted could be as small as 1 nm. However, when proper account is taken of an entire electron cascade associated with the re-building of electron shells after photoelectron emission, spots more than one order of magnitude larger result, limiting the best lateral resolution to 20–30 nm.  相似文献   
979.
根据密度泛函理论对钴掺硫化锌周围的品格进行了结构优化,计算得到了钴杂质周围的晶体结构、电子态密度分布和吸收光谱.计算结果表明,由于Co原子掺入ZnS晶格常数减小,导致晶格畸变;带隙变窄;吸收峰展宽至更长波长区域.  相似文献   
980.
Institute of Mechanics, Academy of Sciences of the Ukrainian SSR, Kiev. Translated from Prikladnaya Mekhanika, Vol. 27, No. 7, pp. 103–109, July, 1991.  相似文献   
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