Stroke-Based Surface Reconstruction

In this paper, we present a surface reconstruction via 2D strokes and a vector field on the strokes based on a two-step method. In the first step, from sparse strokes drawn by artists and a given vector field on the strokes, we propose a nonlinear vector interpolation combining total variation (TV) and $H^1$ regularization with a curl-free constraint for obtaining a dense vector field. In the second step, a height map is obtained by integrating the dense vector field in the first step. Jump discontinuities in surface and discontinuities of surface gradients can be well reconstructed without any surface distortion. We also provide a fast and efficient algorithm for solving the proposed functionals. Since vectors on the strokes are interpreted as a projection of surface gradients onto the plane, different types of strokes are easily devised to generate geometrically crucial structures such as ridge, valley, jump, bump, and dip on the surface. The stroke types help users to create a surface which they intuitively imagine from 2D strokes. We compare our results with conventional methods via many examples.     

聚噻吩制备条件对其结构和导电性能的影响

通过改变聚噻吩合成条件(温度、浓度、反应时间)得到各种不同样品, 用FESEM, FTIR光谱, Raman光谱, XRD, UV-Vis光谱和TG等手段对样品进行研究. 结果表明, 不同的制备条件会影响噻吩环的连接方式, 直接影响聚噻吩结构的分布. 导电性能研究表明, 聚噻吩的结构差异和其导电性能直接相关, 实验证明以α-α相连接的聚噻吩有更高的电导率.     

Influence of structural parameters on the immunity of short-channel effects in grooved-gate nMOSFET

This paper presents the influences of structural parameters on the immunity of short-channel effects in grooved-gate n-channel metal－oxide－semiconductor field effect transistor (nMOSFET) using the simulator PISCES-II. The zero or negative groove-junction depth is beneficial to the improvement of the threshold characters, but there exists a limited range. The doping concentration of both substrate and channel has a significant influence on the threshold characters as well as on the device transconductance. Thus, the variation in these adjustable parameters may help to optimize the device design.     

聚噻吩/多壁碳纳米管复合材料结构与导电机理的研究

从结构和相互作用方面对聚噻吩(PTh)/多壁碳纳米管(MWNTs)复合材料进行了研究, 结果表明: 一方面聚噻吩本身的结构对其导电性能有一定的影响, 另一方面MWNTs作为一种掺杂剂, 和聚噻吩之间存在强的相互作用, 电子从MWNTs转移到聚噻吩. MWNTs和它周围被掺杂的聚噻吩通过π-π共轭作用形成相对独立的导电单元, 在复合材料的导电体系中起到主要作用, 随着这种导电单元数量的增加直至相互接触, 形成大的导电体系, 复合材料的电导率达到最大值.     

A Level Set Representation Method for N-Dimensional Convex Shape and Applications

In this work,we present a new method for convex shape representation,which is regardless of the dimension of the concerned objects,using level-set approaches.To the best of our knowledge,the proposed prior is the first one which can work for high dimensional objects.Convexity prior is very useful for object completion in computer vision.It is a very challenging task to represent high dimensional convex objects.In this paper,we first prove that the convexity of the considered object is equivalent to the convexity of the associated signed distance function.Then,the second order condition of convex functions is used to characterize the shape convexity equivalently.We apply this new method to two applications:object segmentation with convexity prior and convex hull problem(especially with outliers).For both applications,the involved problems can be written as a general optimization problem with three constraints.An algorithm based on the alternating direction method of multipliers is presented for the optimization problem.Numerical experiments are conducted to verify the effectiveness of the proposed representation method and algorithm.     

高速数字全息测量乙醇喷雾火焰中液滴三维位置、粒径及蒸发率

喷雾蒸发燃烧的研究对指导发动机燃烧系统设计具有重要意义。本文搭建了高速数字全息系统,在线测量乙醇喷雾火焰中液滴的粒径、三维位置、速度及蒸发率。对喷雾火焰中的液滴进行了统计分析,得到液滴粒径及三维空间分布。燃烧喷雾场液滴的平均粒径为68μm;非燃烧火焰测试区液滴数量多且较密集,燃烧火焰测试区液滴数量少且稀疏.追踪单液滴并处理得到湍流火焰中液滴的运动轨迹及速度。通过研究粒径的平方D2随停留时间ts的变化,测得液滴平均蒸发率为-3.343×10-7 m2/s.     

荧光检测镉对黑斑蛙精子的毒性效应

用不同剂量的镉对雄性黑斑蛙(Rananigromaculata)成体隔日进行皮肤染毒,处理7d后,采用吖啶橙荧光染色法对用镉处理后的黑斑蛙成体的精子进行染色,荧光显微镜下对不同处理组的黑斑蛙精子进行观察.结果表明,与对照相比,0.5、1和2mg/kg组黑斑蛙的双链DNA精子数减少,而0.05mg/kg组反而增加.说明一定剂量的镉对雄性黑斑蛙成体精子具有毒性效应.     

新型槽栅nMOSFET凹槽拐角效应的模拟研究

应用二维器件仿真程序PISCES Ⅱ，模拟计算了新型槽栅结构器件中凹槽拐角效应的影响与作用，讨论了槽栅结构MOSFET的沟道电场特征及其对热载流子效应、阈值电压特性等的影响.槽栅结构的凹槽拐角效应对抑制短沟道效应和抗热载流子效应是十分有利的，并且拐角结构在45°左右时拐角效应最大.调节拐角与其他结构参数，器件的热载流子效应、阈值电压特性、亚阈值特性、输出特性等都会有较大的变化. 关键词： 槽栅MOSFET 拐角效应 阈值电压 热载流子退化     

Rate of Convergence for some constraint decomposition methods for nonlinear variational inequalities

Summary. Some general subspace correction algorithms are proposed for a convex optimization problem over a convex constraint subset. One of the nontrivial applications of the algorithms is the solving of some obstacle problems by multilevel domain decomposition and multigrid methods. For domain decomposition and multigrid methods, the rate of convergence for the algorithms for obstacle problems is of the same order as the rate of convergence for jump coefficient linear elliptic problems. In order to analyse the convergence rate, we need to decompose a finite element function into a sum of functions from the subspaces and also satisfying some constraints. A special nonlinear interpolation operator is introduced for decomposing the functions. Received December 13, 2001 / Revised version received February 19, 2002 / Published online June 17, 2002 This work was partially supported by the Norwegian Research Council under projects 128224/431 and SEP-115837/431.     

4H-SiC纳米薄膜的微结构及其光电性质研究

采用新设计的电极结构的等离子体增强化学气相沉积(PECVD)技术,在高功率密度、高氢稀释比、低温、偏压及低反应气压的条件下,在衬底表面形成双等离子流,增加了衬底表面SiC的成核概率,增强成核作用,形成纳米晶.采用高H2等离子体刻蚀弱的、扭曲的、非晶Si—C及Si—Si和Si—H等键时,由于H等离子体对纳米SiC晶粒与非晶态键的差异刻蚀作用,产生自组织生长,发生晶化.Raman光谱和透射电子衍射(TEM)的测试结果表明,纳米晶SiC是4HSiC多型结构.电子显微照片表明平均粒径为16nm,形状为微柱体.实验结果指出,SiC纳米晶的形成必须经过偏压预处理成核,并且其晶化存在一个功率密度阈值;当低于这一功率密度阈值时,晶化消失;当超过这一阈值时,纳米晶含量随功率密度的提高而增加.随着晶化作用的加强,电导率增加. 关键词： 4H-SiC PECVD 纳米结构 多型薄膜 纳米电子学