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91.
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By using the pulse propagation equation in the nonlinear dispersive medium, the effects of second- and third-order group-velocity dispersion on pulse evolution in the stretching, amplification and compressing are studied when chirped pulse am-plification is applied to the pulses of a width <30fs, and the optimum dispersion-compensated conditions among the stretcher, amplifier and compressor are deter-mined. From the standpoint of dispersion compensation and control and the com-pressor adjustment, it is proposed that low-groove-density gratings (≤800 line/mm) are the better choices for stretching and compressing the pulses of a width <30fs in chirped-pulse amplification. It is also shown that, with a proper adjustment of the compressor incident angle and grating separation, an exact null in both second- and third-order dispersions can be achieved without any additional dispersion- compensated elements. 相似文献
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In a novel parametrization of neutrino mixing and in the approximation of т-lepton dominance, we show that the one-loop renormalization-group equations (RGEs) of Dirac neutrinos are different from those of Majorana neutrinos even if two Majorana CP-violating phases vanish. As the latter can keep vanishing from the electroweak scale to the typical seesaw scale, it makes sense to distinguish between the RGE running effects of neutrino mixing parameters in Dirac and Majorana cases. The differences are found to be quite large in the minimal supersymmetric standard model with sizable tanβ, provided the masses of three neutrinos are nearly degenerate or have an inverted hierarchy. 相似文献
97.
为了满足惯性约束聚变(ICF)和状态方程(EOS)实验以及靶装配工艺的需要,在薄膜轧制过程中间以及轧制工艺完成以后需要对镍膜进行热处理来改善其组织结构和力学性能。对多辊轧机冷轧的方法制备的厚11 mm镍膜中间退火工艺进行了研究,根据确定的合适的退火工艺退火后继续轧制得到成品镍膜厚7 mm,表面粗糙度小于50 nm,基本满足目前状态方程实验对箔膜的要求。金相显微照片表明镍膜晶粒经500 ℃保温1 h退火由轧制前的条带状变为等轴晶;镍膜硬度经500 ℃退火后由4 GPa降低到了2.3 GPa左右;XRD衍射测试表明镍膜经500 ℃以上温度退火后,高角度的衍射峰开始出现,织构得到一定程度的改善。由此可以确定镍膜合适的中间退火温度为520 ℃保温1 h。 相似文献
98.
Electronic properties of both Pb and S vacancy defects in PbS(1^-00) have been studied using the first-principles density functional theory (DFT) calculations with the plane-wave pseudopotentials. It is found that the density of states (DOS) near the top of the valence band and the bottom of the conduction band is significantly modified by these defects. Our calculation indicates that in the case of S vacancy defects the Fermi energy shifts to the conduction band making it as an n-type PbS (donor). However, in the case of Pb vacancy, because of the appreciable change of the DOS, the system acts as a p-type PbS (accepter). In addition, the structural relaxation shows that the defect leads to outward relaxation of the nearest-neighbouring atoms and inward relaxation of the next-nearest neighbouring atoms. 相似文献
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