首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   2458篇
  免费   148篇
  国内免费   16篇
化学   1925篇
晶体学   23篇
力学   82篇
数学   114篇
物理学   478篇
  2024年   3篇
  2023年   14篇
  2022年   21篇
  2021年   69篇
  2020年   43篇
  2019年   60篇
  2018年   41篇
  2017年   42篇
  2016年   95篇
  2015年   93篇
  2014年   118篇
  2013年   159篇
  2012年   270篇
  2011年   255篇
  2010年   151篇
  2009年   136篇
  2008年   189篇
  2007年   157篇
  2006年   146篇
  2005年   124篇
  2004年   100篇
  2003年   93篇
  2002年   87篇
  2001年   36篇
  2000年   21篇
  1999年   20篇
  1998年   8篇
  1997年   8篇
  1996年   5篇
  1995年   10篇
  1994年   4篇
  1993年   9篇
  1992年   3篇
  1991年   6篇
  1990年   3篇
  1989年   4篇
  1987年   2篇
  1986年   3篇
  1985年   3篇
  1984年   2篇
  1983年   3篇
  1982年   1篇
  1981年   2篇
  1979年   1篇
  1976年   1篇
  1969年   1篇
排序方式: 共有2622条查询结果,搜索用时 16 毫秒
131.
132.
133.
Organic semiconductors (OSCs) are strong contenders for use in printed, flexible electronics. Although organic electronic materials have been studied for many years, the physics of charge transport is still under investigation. This is in part due to variability resulting from the large variety of molecules that can be synthesized and inconsistency in electrical characterization due to device and processing conditions. Molecular ordering in OSCs is known to alter the charge transport characteristics and attention to long range and short range ordering provides clues as to the nature of transport pathways. Here, we study ordered regioregular poly(3‐hexylthiophene‐2,5‐diyl) films carefully prepared to obtain a set of three samples with incrementally increasing order on identical transistor architectures. Ordering was characterized using a variety of short and long range techniques to probe the coherence and number of crystallites formed during processing, and the correlation between these different measures of order are quantified. We observe three changes in transistor behavior that show a shift from non‐ideal to more textbook‐like characteristics with increasing order: reduction of the contact resistance, shift to field‐independent mobility, and a shift from a diode‐like (S‐shaped) to linear response at low lateral fields. © 2017 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2017 , 55, 1063–1074  相似文献   
134.
135.
Mössbauer spectroscopy, DSC and magnetic measurements have been used to study the influence of B and P on structural; magnetic properties and thermal stability of cast iron based alloys. Results reveal that addition of B and P affects appreciably: (1) the crystallization temperature and supercooled liquid region ranging between 690–781 and 53–81 K respectively; (2) the spin texture, disorder and (3) the obtained magnetization parameters. Coercive field values range between 10.09 and 16.37 A/m, with lowest value of 10.09 A/m obtained for Ci87.82B12.17. Saturation induction (B s) values vary between 1.32 and 1.85 T. Highest B s value of 1.85 T is obtained for the Ci95.65B4.32 alloy which is at the edge of glass forming ability, with only 4.32 at.% of boron was added to the cast iron composition. Losses (at 50 Hz and 0.32 kA/m) for the studied samples range between 0.43 and 0.82 W/kg. Lowest losses of 0.43 W/kg was obtained for the Ci91.3P4.35B4.35 alloy. Phosphorous and boron additions, helps in the bulk glass forming ability, suggesting perspective applications of these cheap cast iron based soft magnetic alloys as a substitute of the conventional materials.  相似文献   
136.
137.
138.
139.
140.
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号