Fabrication of marker area to align TEM tomographic tilt series of rod-shaped specimens

In this study, we present a new method for placing markers for alignment of tomographic tilt-series of rod-shaped specimen before 3D reconstructions. By this method, markers (gold nanoparticles) were placed only on the carbon layer (referred to as the "marker area") deposited for protecting the specimen surface against ion beam irradiation; this placement was achieved by vacuum evaporation of gold with the help of a mask fabricated adjacent to the specimen. Experimental results showed that the use of the proposed method facilitates the identification of the markers in the alignment process, because the image of the marker area consists of simple high-contrast images of the gold nanoparticles on the carbon layer. The performance of the proposed method was successfully verified experimentally by applying it to a high-density Au/SiO? nanocomposite material as a test specimen.     

Gas by-products of CF3I under AC partial discharge

This paper presents the decomposition by-products of trifluro-iodo-methane and their relative proportions in the gas phase under the occurrence of partial discharge. The experiment was performed in the presence of water vapor from 250 to 400 ppm under a non-uniform electric field configuration. The experimental results reveal that the by-products of C₂F₆, C₂F₄, C₂F₅I with the amount of 1300, 200, and 55 (CH₃I) ppm, respectively, were produced for a cumulative charge of 161 mC. Other by-products, such as C₃F₈, CHF₃, C₃F₆ CH₃I were obtained at less than 30 ppm C₂F₆ was the dominant gas by-product of trifluro-iodo-methane suffering partial discharge.     

Non-decoupling effects in supersymmetric Higgs sectors

A wide class of Higgs sectors is investigated in supersymmetric standard models. When the lightest Higgs boson (h  ) looks the standard model one, the mass (mh$m_h$) and the triple Higgs boson coupling (the hhh   coupling) are evaluated at the one-loop level in each model. While mh$m_h$ is at most 120–130 GeV in the minimal supersymmetric standard model (MSSM), that in models with an additional neutral singlet or triplet fields can be much larger. The hhh coupling can also be sensitive to the models: while in the MSSM the deviation from the standard model prediction is not significant, that can be 30–60% in some models such as the MSSM with the additional singlet or with extra doublets and charged singlets. These models are motivated by specific physics problems like the μ-problem, the neutrino mass, the scalar dark matter and so on. Therefore, when h   is found at the CERN Large Hadron Collider, we can classify supersymmetric models by measuring mh$m_h$ and the hhh coupling accurately at future collider experiments.     

Indirect bounds on heavy scalar masses of the two-Higgs-doublet model in light of recent Higgs boson searches

We study an upper bound on masses of additional scalar bosons from the electroweak precision data and theoretical constraints such as perturbative unitarity and vacuum stability in the two-Higgs-doublet model taking account of recent Higgs boson search results. If the mass of the Standard-Model-like Higgs boson is rather heavy and is outside the allowed region by the electroweak precision data, such a discrepancy should be compensated by contributions from the additional scalar bosons. We show the upper bound on masses of the additional scalar bosons to be about 2 (1) TeV for the mass of the Standard-Model-like Higgs boson to be 240 (500) GeV.     

Solution‐processable colorless polyimides derived from hydrogenated pyromellitic dianhydride with controlled steric structure

This work presents novel colorless polyimides (PIs) derived from 1R,2S,4S,5R‐cyclohexanetetracarboxylic dianhydride (H″‐PMDA). Isomer effects were also discussed by comparing with PI systems derived from conventional hydrogenated pyromellitic dianhydride, that is, 1S,2R,4S,5R‐cyclohexanetetracarboxylic dianhydride (H‐PMDA). H″‐PMDA was much more reactive with various diamines than H‐PMDA, and the former led to PI precursors with much higher molecular weights. The results can be explained from the quite different steric structures of these isomers. The thermally imidized H″‐PMDA‐based films were colorless regardless of diamines because of inhibited charge‐transfer interaction. In particular, the H″‐PMDA/4,4′‐oxydianiline system simultaneously achieved a very high T_g exceeding 300 °C, high toughness (elongation at break > 70%), and good solution processability. In contrast, the H‐PMDA‐based counterparts were essentially insoluble. The outstanding solubility of the former probably results from disturbed chain stacking by its nonplanar steric structure. An advantage of chemical imidization process is also proposed. In some cases, a copolymerization approach with an aromatic tetracarboxylic dianhydride was effective to improve the thermal expansion property. The results suggest that the H″‐PMDA‐based PI systems can be promising candidates for novel high‐temperature plastic substrate materials in electronic paper displays. A potential application as optical compensation film materials in liquid crystal displays (LCD) is also proposed in this work. © 2012 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2013     

Reverse current reduction of Ge photodiodes on Si without post-growth annealing

A new approach to reduce the reverse current of Ge pin photodiodes on Si is presented, in which an i-Si layer is inserted between Ge and top Si layers to reduce the electric field in the Ge layer. Without post- growth annealing, the reverse current density is reduced to -10 mA/cm^2 at -1 V, i.e., over one order of magnitude lower than that of the reference photodiode without i-Si layer. However, the responsivity of the photodiodes is not severely compromised. This lowered-reverse-current is explained by band-pinning at the i-Si/i-Ge interface. Barrier lowering mechanism induced by E-field is also discussed. The presented ＂non-thermal＂ approach to reduce reverse current should accelerate electronics-photonics convergence by using Oe on the Si complementary metal oxide semiconductor （CMOS） platform.