Transport properties and magnetoresistance in La0.8Te0.2MnO3/ZrO2 composites

The transport properties and magnetoresistance of electron-doped manganate / insulator composites (La_0.8Te_0.2MnO₃)_{1 - x}/(ZrO₂)_x (x=0, 0.3, and 0.5) are investigated. It is found that the metal-insulator transition temperature of this system shifts to a lower value as the ZrO₂ content increases. The introduction of ZrO₂ enhances both the domain scattering and electron relative scattering in the metal transport region. In the adiabatic small polaron hopping transport region, the thermal activation energy seems invariable regardless of the ZrO₂ content. The application of a magnetic field promotes the charge transportation capabilities of the composites, and the magnetoresistance is enhanced with an increase of the ZrO₂ content. This could be attributed to the more remarkable modification effect of magnetic field on ordering degree in the composites than in pure La_0.8Te_0.2MnO₃.     

Growth of SnO2 nanoparticles via thermal evaporation method

Tin oxide (SnO₂) nanoparticles were fabricated by evaporation of Sn powers at 1000 °C in air pressure. The as-deposited SnO₂ particles were single crystal structure, which were mostly spherical shape, the diameter of particles was ranging from 200 to 600 nm. The photoluminescence (PL) spectrum showed that a sharp emission peak at around 393 nm with the excitation wavelength at 325 nm, which suggested possible applications in nanoscaled optoelectronic devices. It was also found that the holding time affects the morphology of the products. The formation mechanism of SnO₂ particles was discussed.     

Beam controller using nonlinear embedded optical transformation

Flexible and adjustable beam splitters, expanders/compressors and the cloak are presented based on a universal two-dimensional transformation formula for the embedded transformation optics. Nonlinear transformation results by the suggested formula under different conditions reveal several interesting phenomena and potential applications. All beam controllers are achieved by the nonlinear coordinate transformation.     

Phase-change behavior in Si/Sb80Te20 nanocomposite multilayer films

Phase-change behavior in Si/Sb₈₀Te₂₀ nanocomposite multilayer films were investigated by utilizing in situ resistance measurements. It was found that the crystallization temperature increased firstly with increasing Si layer thickness within the multilayer films, and then remained almost unchanged at 170°C. The multilayer films have the merits of both good thermal stability and fast phase-change speed. An increase in crystallization temperature by around 95°C was observed for the multilayer films when the Sb₈₀Te₂₀ layer thickness was reduced to 3 nm. Cross-sectional transmission electron microscopy (TEM) observations revealed that Si/Sb₈₀Te₂₀ nanocomposite multilayer films had layered structures with clear interfaces. The reversible phase change between set and reset states was verified in phase-change random access memory (PCRAM) cell based on [Si (1 nm)/Sb₈₀Te₂₀ (5 nm)]₁₇ multilayer film.     

Neutrals ejection in intense femtosecond laser ablation

Time-resolved shadowgraphs and holograms of intense femtosecond laser ablation of aluminum are reported. The different bending trends of interference fringes are found in the ablations of aluminum and other materials at probe wavelengths of 400 and 800 nm, for the first time to our knowledge, which could be attributed to the ejection of massive neutral droplets induced by critical-point phase separation during the second material ejection.     

Magnetic characterization of dual phase FeZrB soft magnetic alloy

The magnetic properties and the annealing process of Fe₇₈Zr₇B₁₅ amorphous ribbons are investigated by X-ray diffraction (XRD), differential scanning calorimetry, and vibrating sample magnetometer. The fully amorphous structure of the as-quenched ribbons is confirmed by the XRD pattern. The Curie temperature and the saturation magnetization M_s of the ribbons are 305 °C and 124.3 emu/g, respectively. Annealing at 550 °C can result in an increase in M_s with annealing time due to the increasing crystallized volume fraction of α-Fe phase. The optimized annealing process is established at 550 °C for 20-30 min with maximum M_s of 146.6 emu/g. The morphology of the ribbons annealed at 550 °C is observed by scanning electron microscopy, showing that nanocrystalline α-Fe grains are dispersed in an amorphous matrix.     

The electronic transport properties in C60 molecular devices with different contact distances

By applying non-equilibrium Green?s functions in combination with the density-functional theory, we investigate the transport behavior of molecular devices composed by metal electrode-C₆₀ molecule-metal electrode. Our results show that the electronic transport properties are affected obviously by the different contact distances between the electrodes, and the tunneling current decreases approximately exponentially at a certain bias with the increasing of contact distances. The negative differential resistance is observed and the peak-to-valley ratio can be tuned by different contact distances. The mechanisms of the contact distance effect and the negative differential resistance behavior are proposed.     

Ultraviolet detection of amino acids based on their on-column conjugation with cupric cation using a disposable electrophoresis microdevice

A method for fast sensitive ultraviolet detection of amino acids was developed with a disposable electrophoresis microdevice. The microdevice was conveniently constructed by fixing a fused-silica capillary with a sampling fracture to a printed circuit board. During the separation process, the on-column conjugation of amino acids with cupric cation led to the ultraviolet absorption at 232 nm that could be directly used for fast analysis of amino acids. Using 20 mM boric acid (pH 5.3) containing 5 mM cupric cation and 0.015% Tween 20 as running buffer, this method could completely separate lysine, glutamine and serine at a sampling time of 2 s at +210 V and a separation voltage of +1800 V (240 V/cm). The theoretical plate numbers were from 140,000 to 205,000 plates/m. The linear ranges were from 10 to 500 μM for lysine, 20-1000 μM for glutamine and serine. The novel protocol had been successfully used to detect amino acids in beverage samples with recovery more than 85.0%, indicating its advantages and potential analytical application in different fields.     

The dielectric and leakage current behavior of CoFe2O4-BaTiO3 composite films prepared by combining method of sol-gel and electrophoretic deposition

Composite CoFe₂O₄-BaTiO₃ films were prepared by combining method of sol-gel and electrophoretic deposition. CoFe₂O₄ thick films were prepared by electrophoretic deposition method and then BaTiO₃ precursor solution was spin-coated on these thick films to obtain dense structure. X-ray diffraction indicated that the films consisted of both spinel CoFe₂O₄ and perovskite BaTiO₃ phase. Dielectric properties and leakage current conduction of the films were studied. Leakage current characterization of the films exhibits an Ohmic conduction behavior at lower electric field and space charge limited conduction behavior at higher electric field, respectively.     

Breakdown-quenching characteristics and mechanisms for silicon photomultipliers

Some deviant breakdown-quenching characteristics of silicon photomultipliers are demonstrated and their physical mechanisms are explored. “Twice breakdown” phenomenon, “flat-topped” avalanche pulses and the determination method of the real breakdown voltage of the detector are analyzed. These characteristics are explained by the integration model in terms of avalanche threshold current based on the Haitz's equivalent circuit model. The reasoning results show that the maximum over-voltage for a normal operating silicon photomultiplier equals the product of the avalanche threshold current and the quenching resistor of the avalanche photo-diode (APD) pixel, approximately. Moreover, the model and results can be extended to other small avalanche junctions with quenching resistor.