Temperature-sensitive aqueous surfactant two-phase system formation in cationic-anionic surfactant systems

Temperature-induced aqueous surfactant two-phase system (T-ASTP), which was found to be of generic importance, was investigated in a series of conventional mixed cationic-anionic surfactant systems. On the basis of the investigations of turbidity, dynamic light scattering, transmission electron microscopy, and fluorescence resonance energy transfer, the formation of T-ASTP can be attributed to temperature-induced vesicle aggregation. Aggregated vesicles existed in the upper part, while the separated vesicles existed in the lower part. The phase separation temperature can be regulated by varying the surfactant composition or adding additives, such as d-sorbitol, urea, or NaBr. The hydrophobic interaction and cooperative effect between cationic and anionic surfactants played a significant role in the formation of T-ASTP.     

曲波域统计量自适应阈值探地雷达数据去噪技术

非线性、非平稳探地雷达数据常掺杂各种复杂噪声源,其对精确提取弱反射波信号、识别绕射波双曲线同相轴特征具有严重影响,忽略噪声影响给探地雷达探测数据全波形偏移成像及后续解译造成较大误差.采用传统阈值函数的曲波变换去噪需要根据数据噪声水平人为确定合理阈值控制系数.对此,本文开展自适应阈值函数的曲波变换去噪算法研究.引入块状复数域阈值函数算法,分析传统阈值函数曲波变换去噪的效果随阈值控制系数变化的规律;利用高阶统计量理论,对曲波变换系数在尺度、方向上进行相关性叠加,通过相关性统计量自适应确定有效信号在曲波变换系数分布尺度、旋转方向,由此确定清除噪声成分阈值范围,构建统计量自适应阈值函数曲波变换去噪算法.针对包含随机噪声、相关噪声合成探地雷达数据及实测探地雷达数据,采用传统阈值函数曲波变换去噪与本文提出去噪算法处理结果对比分析,检验了本文算法的有效性及可行性.研究成果对复杂探地雷达数据精确推断解译具有指导意义.     

A Semiconducting Organic–Inorganic Hybrid Perovskite‐type Non‐ferroelectric Piezoelectric with Excellent Piezoelectricity

Piezoelectric materials are a class of important functional materials applied in high‐voltage sources, sensors, vibration reducers, actuators, motors, and so on. Herein, [(CH₃)₃S]₃[Bi₂Br₉]( 1 ) is a brilliant semiconducting organic–inorganic hybrid perovskite‐type non‐ferroelectric piezoelectric with excellent piezoelectricity. Strikingly, the value of the piezoelectric coefficient d₃₃ is estimated as ≈18 pC N^?1. Such a large piezoelectric coefficient in non‐ferroelectric piezoelectric has been scarcely reported and is comparable with those of typically one‐composition non‐ferroelectric piezoelectrics such as ZnO (3pC N^?1) and much greater than those of most known typical materials. In addition, 1 exhibits semiconducting behavior with an optical band gap of ≈2.58 eV that is lower than the reported value of 3.37 eV for ZnO. This discovery opens a new avenue to exploit molecular non‐ferroelectric piezoelectric and should stimulate further exploration of non‐ferroelectric piezoelectric due to their high stability and low loss characteristics.     

Practical Security Analysis of Self-Referenced CV-QKD System in the Presence of Polarization Aberration

How to remove local oscillator (LO) side channel attacks has been a notoriously hard problem in continuous-variable quantum key distribution (CV-QKD). In the self-referenced CV-QKD schemes, the LO signal is locally generated at the receiver by an independent laser so that it is not co-transmitted with the quantum signal. This simple solution removes all LO side channels. However it also introduces some other practical vulnerabilities. Especially the polarization states of the quantum signal and LO signal may not be identical across the detector because of the presence of the polarization aberrations. Thus, the detection efficiency which is arguably the most critical experiment parameter of the practical implementation will be impaired. In this paper, we analyze the impact of polarization aberrations on the detection efficiency for CV-QKD and propose a self-referenced CV-QKD scheme in the presence of polarization aberrations by using an off-axis optical system. In the proposed scheme, the polarization states of the quantum signal would change with the off-axis optical system, thus impairing the heterodyne efficiency. Our security analysis shows a gap between the theory and practice of CV-QKD.

     

Characterization of tunnel oxide passivated contact with n-type poly-Si on p-type c-Si wafer substrate

The junction properties of tunnel silicon oxide (SiO_x) passivated contact (TOPCon) with n-type poly-Si on p-type c-Si wafer are characterized using current-voltage (J-V) and capacitance-voltage (C-V) measurements. The dark J-V curves show a standard diode characteristic with a turn-on voltage of ～0.63 V, indicating a p-n junction is formed. While the C-V curve displays an irregular shape with features of 1) a slow C increase with the decrease of the magnitude of reverse bias voltage, being used to estimate the built-in potential (V_bi), 2) a significant increase at a given positive bias voltage, corresponding to the geometric capacitance crossing the ultrathin SiO_x, and 3) a sharp decrease to negative values, resulting from the charge tunneling through the SiO_x layer. The C of depleting layer deviates from the normal linear curve in the 1/C²-V plot, which is caused by the diffusion of P dopants from the n-type poly-Si into the p-type c-Si wafer as confirmed by the electrochemical capacitance-voltage measurements. However, the 1/C^2+γ-V plots with γ > 0 leads to linear curves with a proper γ and the V_bi can still be estimated. We find that the V_bi is the range of 0.75–0.85 V, increases with the increase of the doping ratio during the poly-Si fabrication process, and correlates with the passivation quality as measured by the reverse saturated current and implied open circuit voltage extracted from transient photoconductivity decay.     

Quantum Byzantine Agreement with Tripartite Entangled States

We present a quantum protocol for resolving the detectable Byzantine agreement (BA) problem using tripartite Greenberger–Horne–Zeilinger(GHZ)-like states and homodyne measurements in the continuous variable (CV) scenario. The protocol considers the simplest (i.e., three-player) BA problem involving one broadcaster and two receivers who jointly participant in the distribution, test, and agreement phases. The GHZ-like states provide the quantum resources for implementing the primitive of BA and satisfy a priori entanglement bound. Analyses demonstrate that the proposed quantum solution adheres to the agreement, validity, and termination criteria. Conveniently, the beam splitter strategy along with photon detection offers a method for comparing quantum messages. The paper shows that a potential high-efficiency CV-based BA protocol can be achieved using standard off-the-shelf components in quantum optics, maintaining the desirable characteristics of CVs when compared with discrete-variable BA protocol.

     

Spectral Characterization of Couplings in a Mixed Optomechanical Model *

Abstract:We study the spectrum of single-photon emission and scattering in a mixed optomechanical model which consists of both linear and quadratic optomechanical interactions. The spectra are calculated based on the exact long-time solutions of the single-photon emission and scattering processes in this system. We find that there exist some phonon sideband peaks in the spectra and there are some sub peaks around the phonon sideband peaks under proper parameter conditions. The correspondence between the spectral features and the optomechanical interactions is confirmed, and the optomechanical coupling strengths can be inferred by analyzing the resonance peaks and dips in the spectra.     

InGaZnO薄膜晶体管泄漏电流模型

研究了非晶氧化锌镓铟薄膜晶体管(amorphous InGaZnO thin-film transistor,InGaZnO TFT)的泄漏电流模型.基于Poole-Frenkel热发射效应和热离子场致发射效应的泄漏电流产生机制,分别得到了高电场和低电场条件下的载流子产生-复合率.在此基础上推导得到了InGaZnO TFT的分段式泄漏电流-电压数学模型,并利用平滑函数得到了关断区和亚阈区连续统一的泄漏电流模型.所提出的泄漏电流模型的计算值和TCAD模拟值与实验结果较为吻合.利用所提出的InGaZnO TFT泄漏电流模型和TCAD模拟,讨论了InGaZnO TFT不同的沟道宽度、沟道长度和栅介质层厚度对泄漏电流值的影响.研究结果对InGaZnO TFT集成传感电路的设计具有一定参考价值.     

基于地基观测的时序卫星红外光谱建模与分析

针对地基观测的卫星红外光谱受复杂因素的影响和外场试验对测量卫星物性信息的缺乏,无法解释卫星红外光谱反演出特征的有效性和具体物理意义的问题,提出了一种基于地基观测的卫星热红外光谱的建模和分析的方法.首先,考虑了太阳辐射、地球辐射、卫星各面对探测器的可见情况、地基探测器可探测卫星的范围、大气衰减等因素的影响,更加准确地建立卫星热红外光谱模型.然后,以风云三号卫星为例,利用该模型计算了在观测时序上卫星在地基探测器入瞳上的3—14μm红外光谱辐照度;分析了影响卫星红外光谱变化的主要因素.最后,利用普朗克函数拟合卫星红外光谱,提取出特征与卫星的物性比较,并对其进行分析.结果表明:在各种影响因素中,由卫星运动引起的对探测器可见情况的改变是影响卫星红外光谱数据的主要因素.等效温度和等效面积物理含义能被有效地解释,等效温度接近于太阳帆板的温度,温差仅在15 K左右,等效面积能表征卫星投影面积的变化;发现利用帆板和本体有较大的温差,能实现帆板和本体的分离,并实现新特征的提取.