Crystal Structures of Two Potential Tumor Imaging Agents and Therapeutic Agents Copper（Ⅱ） Ternary Complexes with Salicylidene-tyrosinato Schiff Base and Nitrogen-donor Chelating Lewis Base

The crystal structures of two potential tumor imaging agents and therapeutic agents -copper(Ⅱ) complexes with salicylidene-tyrosinato Schiff base and nitrogen-donor chelating Lewis base, [Cu(sal-tyr)(bipy)] 1 and [Cu(sal-tyr)(phen)]2CH3OH 2 are presented. Our work is helpful to get deep understanding of novel 64Cu tumor imaging agents and therapeutic agents.     

恒载超声雾化制取金属粉末的改进方法

本文提出一种改进的超声雾化制取金属粉末方法。克服了因变幅杆负载变化所引起的粉末产率的周期变化，给出装置的框图及有关的参数和实验结果。     

Determination of tyrosine traces by adsorption voltammetry of its copper (II) complex

The electrochemical behavior of the copper-tyrosine complex has been studied by linear-sweep adsorption voltammetry. In 0.02 mol/L Na₂HPO₄ buffer solution (pH=9.6), the complex can be adsorped on a hanging mercury drop electrode and reduced at a peak potential of about –0.42 V (vs. SCE). The secondary derivative peak height is linear proportional to the concentration of tyrosine in the range 1.0×10^–7–5.0×10^–5 mol/L. The detection limit is 5×10^–8 mol/L.Project supported by the Provincial Science Foundation of Shandong Province     

混沌的模糊神经网络逆系统控制

提出用Sugeno型的模糊推理神经网络建立混沌系统的逆系统模型,并采用逆系统方法进行混沌的控制.这种方法的特点是可以不必建立混沌系统的解析模型,通过模糊神经网络学习混沌系统的运动规律,通过学习获得的规律对混沌进行有效的控制,并且该控制方法可以控制混沌系统以一定精度跟踪连续变化的给定信号.理论分析及针对虫口模型和Henon模型仿真研究证明了该方法的有效性 关键词： 混沌 模糊神经网络 逆系统控制     

Windows CE.Net嵌入式操作系统本地化研究及实现

本文对嵌入式Windows CE.Net操作系统的主要体系结构进行剖析.研究设计出了维吾尔文本地化环境,利用资源编译器编译和反编译功能,构建了基于Windows CE.Net平台的维吾尔文图形用户界面资源库,实现Windows CE.Net的界面维文化和基于Windows CE.Net的应用程序的维文支持;开发了输入法程序,实现Windows CE.Net的维吾尔文字键盘输入和软键盘输入;通过编制维吾尔文字库,为Windows CE.Net平台下维吾尔文字的显示、打印提供了基础.     

四（对-羟基苯基）卟啉氧合配合物的室温固相合成，表征及氧合能力

采用固相反应合成了四羟基苯基卟啉与与Fe^2＋,Co^2＋金属离子的配合物,在室温下,将其与分子O2作用,提纯后得到两种固态氧合配合物．通过元素分析、红外光谱（IR）、核磁共振氢谱（^1HNMR）、电导、热分析（TG／DTA）、紫外光谱（UV）等测试手段确定了氧合配合物的组成为[Co·THPP·O2]（NO3）2·2H2O、[Fe·THPP·O2]Cl2·2H2O]，可知1mol配合物吸收了1molO2,采用失重法测定了氧合配合物中的配位氧,确定1mol金属配合物吸收1molO2形成超氧配合物．     

Interfacial structure and electrical properties of LaAlO3 gate dielectric films on Si by metalorganic chemical vapor deposition

LaAlO₃ (LAO) gate dielectric films were deposited on Si substrates by low-pressure metalorganic chemical vapor deposition. The interfacial structure and composition distribution were investigated by high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), secondary-ion mass spectroscopy (SIMS), and Auger-electron spectroscopy (AES). HRTEM confirms that there exists an interfacial layer between LAO and Si in most samples. AES, SIMS, and XPS analyses indicate that the interfacial layer is compositionally graded La–Al silicate and the Al element is severely deficient close to the Si surface. Electrical properties of LAO films were evaluated. No evident difference in electrical properties between samples with and without native SiO₂ layers was observed. The electrical properties are discussed in terms of LAO growth mechanisms, in relation to the interfacial structure. PACS 73.40.Qv; 81.15.Gh; 77.55.+f; 68.35.-p     

高折射率芯Bragg光纤的色散特性研究

应用超格子模型分析了高折射率芯Bragg光纤的色散特性，讨论了Bragg光纤的色散的比例性质以及光纤的芯径、包层周期、填充率与波导色散的关系，并利用这些关系举例实现了Bragg光纤在1.55μm附近的宽带色散平坦. 关键词： Bragg光纤 模式 色散 波导色散     

Champ de vitesse dans un échangeur à vortex en régime turbulentHeat exchanger velocity field with turbulent inlet condition

We consider the isothermal flow through a cylindrical flat chamber, a model of some particular heat exchanger, for which LDV measurements and a numerical simulation have been performed. Experimental results show the establishment of an important vortex zone, the secondary flow extending all along the chamber radius. This observation leads to an expected significant increase of the fluid mixing. Results issued from the numerical simulation appear to be in close agreement with experimental data. Nevertheless, the k–ε model used here must be improved to obtain a better approach near the vortex centre. To cite this article: S. Petitot et al., C. R. Mecanique 330 (2002) 593–599.