The Lagrangian Globalization Method for Nonsmooth Constrained Equations

The difficulty suffered in optimization-based algorithms for the solution of nonlinear equations lies in that the traditional methods for solving the optimization problem have been mainly concerned with finding a stationary point or a local minimizer of the underlying optimization problem, which is not necessarily a solution of the equations. One method to overcome this difficulty is the Lagrangian globalization (LG for simplicity) method. This paper extends the LG method to nonsmooth equations with bound constraints. The absolute system of equations is introduced. A so-called Projected Generalized-Gradient Direction (PGGD) is constructed and proved to be a descent direction of the reformulated nonsmooth optimization problem. This projected approach keeps the feasibility of the iterates. The convergence of the new algorithm is established by specializing the PGGD. Numerical tests are given. This author's work was done when she was visiting The Hong Kong Polytechnic University. His work is also supported by the Research Grant Council of Hong Kong.     

具有HfN/HfO2栅结构的p型MOSFET中的负偏置-温度不稳定性研究

研究了HfN/HfO₂高K栅结构p型金属-氧化物-半导体(MOS)晶体管(MOSFET)中，负 偏置-温度应力引起的阈值电压不稳定性(NBTI)特征.HfN/HfO₂高K栅结构的等效 氧化层厚度(EOT)为1.3nm，内含原生缺陷密度较低.研究表明，由于所制备的HfN/HfO₂ 高K栅结构具有低的原生缺陷密度，因此在p-MOSFET器件中观察到的NBTI属HfN/HfO2高K栅结构的本征特征，而非工艺缺陷引起的；进一步研究表明，该HfN/HfO₂高K栅结构中观察到的NBTI与传统的SiO₂基栅介质p-MOSFET器件中观察 到的NBTI具有类似的特征，可以被所谓的反应-扩散(R-D)模型表征： HfN/HfO₂ 栅结构p-MOSFET器件的NBTI效应的起源可以归为衬底注入空穴诱导的界面反应机理，即在负 偏置和温度应力作用下，从Si衬底注入的空穴诱导了Si衬底界面Si-H键断裂这一化学反应的 发生，并由此产生了Si^＋陷阱在Si衬底界面的积累和H原子在介质层内部的扩散 ，这种Si^＋陷阱的界面积累和H原子的扩散导致了器件NBTI效应的发生. 关键词： 高K栅介质 负偏置-温度不稳定性(NBTI) 反应-扩散(R-D)模型     

热丝CVD生长金刚石薄膜喇曼散射研究

本文报道热丝化学气相沉积法（ＨＦＣＶＤ）生长金钢石薄膜的喇曼散射结果。选取多种峰型，对金钢石薄膜喇曼谱（１１０－１８００ｃｍ－１）采用最小二乘法进行非线性拟合，得到最佳拟合模型，其计算得到的拟合曲线怀实验谱图符合得较好。该模型揭示，石墨Ｄ峰（１３５５ｃｍ－１）是金刚石薄膜喇曼谱中不可缺少的一个组份，并且结合石墨Ｄ峰和金刚石喇曼的空间相关线型，可以解释金刚石喇曼区特殊峰形的物理机制，拟合参量的进一步     

Hamiltonian formulation of generalized quantum dynamics

The Hamiltonian formulation of the usual complex quantum mechanics in the theory of generalized quantum dynamics is discussed. After the total trace Lagrangian, total trace Hamiltonian and two kinds of Poisson brackets are introduced, both the equations of motion of some total trace functionals which are expressed by total trace Poisson brackets and the equations of motion of some operators which are expressed by the without-total-trace Poisson brackets are obtained. Then a set of basic equations of motion of the usual complex quantum mechanics are obtained, which are also expressed by the Poisson brackets and total trace Hamiltonian in the generalized quantum dynamics. The set of equations of motion are consistent with the corresponding Heisenberg equations. Project supported by Prof. T.D. Lee’s NNSC Grant, the National Natural Science Foundation of China, the Foundation of Ph. D. Directing Programme of Chinese University, and the Chinese Academy of Sciences.     

巯基丁二胺铜单层修饰金电极上HIV-p24抗原的电化学免疫检测

制备了用巯基丁二胺铜(CuL)修饰的金电极并用作HIV-p24抗原蛋白(简称p24)免疫检测的化学传感器。CuL通过单层自组装固定在金电极表面,其覆盖率为1.02×10-11mol.cm-2,在含有1.0 mmol.L-1过氧化氢并在pH 6.2的磷酸盐缓冲溶液中,制备的校正曲线的线性范围为0.5-150μg.L-1p24对相应的伏安响应,方法的检出限为0.2μg.L-1。在10μg.L-1p24浓度水平作精密度试验,得RSD值为3.5%,于试样中分别加入5,15,20及30μg.L-1p24进行回收率试验,所得结果在98%-102%之间。此方法毋需另加电子传递媒介体。应用此方法于临床血清分析,所得结果与放射性免疫法的结果一致,且所得RSD值均小于0.3%。     

健康促进对学龄前儿童铅中毒预防和控制的研究进展

综述了国内外学龄前儿童铅中毒的危害和防治现状,针对目前健康教育对降低铅暴露有效性的研究结果并不理想,而且部分研究尚存在设计缺陷的情形,提出了健康促进对学龄前儿童预防和控制铅中毒的必要性和科学根据。     

过渡金属催化的有机硼酸与不饱和键的加成反应

概述了过渡金属催化的有机硼酸与不饱和键的加成反应,包括铑催化、镍催化、钯催化三部分内容.     

（±）—Salvinolone的全合成研究

以２－（３，４－环己基类二氧－５－异丙基）苯基乙醇（２）和３－异丙氧基－５，５－二甲基－１，３－环己烯酮（４）为原料，利用羰基α－位的烷基化反应和分子内的Ｆｒｉｅｄｅｌ－Ｃａｒｆｔｓ反应为关键步骤，经９步反应，合成了多氧芳香型三环二萜类天然产物Ｓａｌｖｉｎｏｌｏｎｅ。     

电镀烧结法制备Ti/SnO2-Sb2O4电极的研究

The Ti/SnO₂-Sb₂O₄ electrode has been prepared by the electroplate-sinter method. The effect of SbCl₃ adding amount and sintering temperature on its electrode lifetime and oxygen evolution potential were investigated by means of EDX, SEM and XRD analysis. The results indicated that the electrode appeared the best performance when the SbCl₃ adding amounts was 0.2g and the sintering temperature was 550℃. In optimized conditions Ti substrate was entirely covered by SnO₂-Sb₂O₄ and the combinations among them were tight. Due to the use of electroplate method, the electrical conductivity, the oxygen evolution potential and the electrode lifetime were increased, so the elec-tro-catalytic activity and the electrochemical stability of the prepared electrode were found to be superior.     

二、三分枝甘露糖簇衍生物的合成

采取一种有效途径合成了二、三分支的甘露糖簇分子．甘露糖经烯丙苷化、乙 酰基保护后，将其烯丙基的双键氧化得到带有羧基连接臂的甘露糖衍生物，然后再 分别与l，6-己二胺和三(2-氨乙基)胺进行缩合反应，最后脱掉保护基，得到二分 枝甘露糖簇化合物6和三分枝甘露糖簇化合物8．