一类求解线性约束非线性规划问题的可行方向法

Wilson,Han和Powell提出的序列二次规划方法(简称SQP方法)是求解非线性规划问题的一个著名方法,这种方法每次迭代的搜索方向是通过求解一个二次规划子问题得到的,本文受[1]启发,得到二次规划子问题的一个近似解,进而给出了一类求解线性约束非线性规划问题的可行方向法,在约束集合满足正则性的条件下,证明了该算法对五种常用线性搜索方法具有全局收敛性。     

加权Herz—type Triebel—Lizorkin空间的特征及应用

当s∈ R,0,〈q, p〈∈∞,0,〈β≤∞且 max{-n/q,-nδ2/qδ1}〈a时，定义了加权Herz—type　Triebel-Lizorkin空间kq^q,pF^s β（R^n,ω1，ω2）和Kq^a,pF^sβ（R^n，ω1，ω2），并给出这些空间的一些特征及在这些空间上的Hard—Littlewood极大算子不等式．     

第一讲中子散射与散裂中子源

中子散射是研究物质微观结构和动态的理想工具之一,广泛地应用于凝聚态物质研究和应用的众多学科领域.散裂中子源能是新一代的加速器基脉冲中子源,能为中子散射提供高通量的脉冲中子.文章简明地介绍了中子散射的特点和它作为物质结构和动态探针的优越性,以及散裂中子源的基本原理、发展状况和多学科的应用优势.我国计划建设的散裂中子源CSNS中,靶站将由多片钨靶、铍/铁反射体和铁/重混凝土生物屏蔽体组成.质子束功率100kW下,脉冲中子通量约为2.4×1016n/cm2/s.第一期将设计建造高通量粉末衍射仪、高分辨粉末衍射仪、小角散射仪、多功能反射仪和直接几何非弹性散射仪等五台典型的中子散射谱仪,以覆盖大部分的中子散射研究领域.     

近场光学显微技术

本文在介绍近场光学显微镜原理的基础上，对近场光学显微技术进行了一定深度的探讨，并着重研究了纳米级探针的制作和纳米级样品与探针间距的控制这两个近场光学显微技术中的关键问题，说明了近场光学显微探针的工作方式，阐述了近场光学成像的衬度类型，介绍了近场光学显微技术在多个领域的应用。在参考大量国内外最新研究成果的基础上，提出了一些个人的见解。     

中物院远红外自由电子激光实验研究

中国工程物理研究院基于射频直线加速器技术的远红外自由电子激光(FIR-FEL)实验取得阶段性进展,于2005年3月24晚8时30分首次出光, 并多次重复. 中心波长115μm, 谱宽1%.介绍了实验系统的主要组成部分和主要实验结果.     

Effects of Si doping on the structural and electrical properties of Ge2Sb2Te5 films for phase change random access memory

The effects of Si doping on the structural and electrical properties of Ge₂Sb₂Te₅ film are studied in detail. Electrical properties and thermal stability can be improved by doping small amount of Si in the Ge₂Sb₂Te₅ film. The addition of Si in the Ge₂Sb₂Te₅ film results in the increase of both crystallization temperature and phase-transition temperature from face-centered cubic (fcc) phase to hexagonal (hex) phase, however, decreases the melting point slightly. The crystallization activation energy reaches a maximum at 4.1 at.% and then decreases with increasing dopant concentration. The electrical conduction activation energy increases with the dopant concentration, which may be attributed to the increase of strong covalent bonds in the film. The resistivity of Ge₂Sb₂Te₅ film shows a significant increase with Si doping. When doping 11.8 at.% of Si in the film, the resistivity after 460 °C annealing increases from 1 to 11 mΩ cm compared to the undoped Ge₂Sb₂Te₅ film. Current-voltage (I-V) characteristics show Si doping may increase the dynamic resistance, which is helpful to writing current reduction of phase-change random access memory.     

Investigation of laminar plasma remelting/cladding processing

Investigation of remelting and cladding processing with laminar plasma jets on several metals has been conducted looking for possible development of a new surface modification technique. The remelting tests illustrated that the new method could evidently improve the material microstructure and properties of cast iron. The cladding was done with Al₂O₃ ceramic powder on stainless steel. The energy dispersive spectra (EDS) analysis was used to determine the distribution of the major cladding element in the plasma-processed layers, for which the microstructure observations and hardness measurements were also performed.     

Effect of end groups on complexation kinetics between cyclodextrins and guest polymers

α‐Cyclodextrin (α‐CD) has been complexed with various poly(ethylene glycol) (PEG) derivatives in aqueous solution. It has been found that the end groups of PEG derivatives affect the complexation kinetics greatly, but have only a little influence on the thermodynamic behavior. By increasing the hydrophobicity of end groups, the complexation speeds up rapidly. On the other hand, the bulky end groups slow down the threading of polymeric guests into the cavity of CD. By changing the hydrophobicity and the size of end groups, the complexation rate can be adjusted in the range of several orders of magnitudes, which should be quite useful in the design of new supramolecular systems. © 2006 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 44: 2050–2057, 2006     

原子核电荷半径的新公式

结合原子核的电荷半径的实验数据,详细分析了描述原子核电荷半径的经验公式,表明电荷半径的Z^1/3律优于A^1/3律.更细致的考察发现,对于远离β稳定线的核素,电荷半径具有近似线性的同位旋相关性.由此得到的同位旋相关的Z^1/3公式更适合描述原子核的电荷半径.     

二维正方各向异性碲圆柱光子晶体完全禁带中缺陷模的FDTD计算分析和设计

用FDTD方法计算了二维正方晶胞各向异性碲圆柱光子晶体的点缺陷模.为了得到TE,TM模式在完全禁带中具有相同共振频率的缺陷模,对中心点缺陷半径Rd以及中心附近对称位置的点缺陷半径Rn做了一系列微调.计算表明,TM模对于Rn的变化不敏感,而TE模随着Rn的改变出现了明显的规则的移动趋势.通过计算分析,发现对应于f=0.4的背景(R=0.3568a),当Rd=0.55a,Rn=0.26a时在完全禁带中TE和TM的缺陷模具有相同的共振频率ω0=0.2466ωe(其中ωe=2πca,a为晶格常数) 关键词： 时域有限差分法 光子晶体 缺陷模 各向异性