准一维电子通道中声电电流的理论计算

表面声波在GaAs/Al _x Ga_1-x As异质结表面上沿由分裂门产生的准一维电子通道方向传 播时，在通道中诱导产生声电电流.采用WKB近似，计算了只有一个电子被量子阱俘获时的声电电流；并在此基础上，详细讨论了表面声波的频率和功率，以及门电压和源漏偏压对声电电流的影响. 关键词： 表面声波 准一维电子通道 量子阱 声电电流     

基于Schrdinger方程的耦合常数解析延拓方法

基于Schr¨odinger方程 ,利用耦合常数解析延拓方法研究了球对称的方势阱、Woods Saxon势和谐振子势中的单粒子共振态的能量与宽度 .分析了耦合常数的取值区间和Pad啨多项式阶数对计算结果的影响 .结果发现 ,在适当的耦合常数取值范围内 ,随着Pad啨多项式阶数的增加可以得到稳定和收敛的单粒子共振态能量与宽度 .     

Nonlinear rheological behavior of silica filled solution‐polymerized styrene butadiene rubber

The reinforcement and nonlinear viscoelastic behavior have been investigated for silica (SiO₂) filled solution‐polymerized styrene butadiene rubber (SSBR). Experimental results reveal that the nonlinear viscoelastic behavior of the filled rubber is similar to that of unfilled SSBR, which is inconsistent with the general concept that this characteristic comes from the breakdown and reformation of the filler network. It is interesting that the curves of either dynamic storage modulus (G′) or loss tangent (tan δ) versus strain amplitude (γ) for the filled rubber can be superposed, respectively, on those for the unfilled one, suggesting that the primary mechanism for the Payne effect is mainly involved in the nature of the entanglement network in rubbery matrix. It is believed there exists a cooperation between the breakdown and reformation of the filler network and the molecular disentanglement, resulting in enhancing the Payne effect and improving the mechanical hysteresis at high strain amplitudes. Moreover, the vertical and the horizontal shift factors for constructing the master curves could be well understood on the basis of the reinforcement factor f(φ) and the strain amplification factor A(φ), respectively. The surface modification of SiO₂ causes a decrease in f(φ), which is ascribed to weakeness of the filler–filler interaction and improvement of the filler dispersion. However, the surface nature of SiO₂ hardly affects A(φ). © 2007 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 45: 2594‐2602, 2007     

流通池—介质交换—阳极溶出伏安法同时测定铜,锑,铋

本文研究了同时测定Ｃｕ（Ⅱ）Ｓｂ（Ⅲ）Ｂｉ（Ⅲ）的方法。在盐酸溶液中对Ｃｕ（Ⅱ），Ｓｂ（Ⅲ），Ｂｉ（Ⅲ）进行预电解富集，经介质交换在选定的丙二酸－盐酸溶液中进行了差示脉冲阳极溶出伏安法（ＤＰＡＳＶ）测定，相邻溶出峰的△Ｆｐ＞８０ｍＶ，波形完好。     

Multiple-State Storage Capability of Stacked Chalcogenide Films （Si16Sb33Te51/Si4Sb45Te51/Si11Sb39Te50） for Phase Change Memory

The multiple-state storage capability of phase change memory （PCM） is confirmed by using stacked chalcogenide films as the storage medium. The current-voltage characteristics and the resistance-current characteristics of the PCM clearly indicate that four states can be stored in this stacked film structure. Qualitative analysis indicates that the multiple-state storage capability of this stacked film structure is due to successive crystallizations in different Si-Sb-Te layers triggered by different amplitude currents.     

第Ⅰ种强度不对称三态叠加多模叠加态光场N次方Y压缩—第一正交相位分量的压缩情况

根据量子力学中的线性叠加原理,构造了由三个强度不等的多模相干态光场|{Z_j^(A)}>_q、|{Z_j^(B)}>_q和|{Z_j^(C)}>_q的线性叠加所组成的第Ⅰ种强度不对称三态叠加多模叠加态光场|ψ_l^(ABC)>_q.利用多模压缩态理论,研究了态|ψ_l^(ABC)>_q的第一正交方分量(即磁场分量)的广义非线性等幂次N次方Y压缩特性.结果发现:①在上述各多模相干态光场中各模的强度和各模的初始相位各不相等的情况下,态|ψ_l^(ABC)>_q的第一正交分量-磁场分量在一定的条件下,总可呈现出周期性变化的、任意等幂次的N次方Y压缩效应;②当上述各多模相干态光场的强度和各模的初始相位相等时,态|ψ_l^(ABC)>_q的磁场分量的N次方Y压缩现象消失,态|ψ_l^(ABC)>_q可恒处于等幂次N-Y最小测不准态.     

采用Authorware 5制作现代光学实验多媒体课件

我们采用目前最流行的多媒体制作软件Authorware 5开发工具，把现代光学实验原理，公式推导，实验内容，步骤等字材料，以及用CCD采集的干涉图像，优美的背景音乐及解说词等多种数学信息，制作成多媒体课件，可直接用于远程教育，有较大的实用价值。     

YZr2OZr3:Er3+纳米晶anti-Stokes发光性质的研究

采用均相沉积法制备了不同Er³⁺离子浓度掺杂的Y₂O₃纳米晶, 应用XRD，SEM和PL光谱对该体系材料进行了表征.在Y₂O₃:Er³⁺纳米材料体系中, 观察和研究了Stokes及anti-Stokes PL谱强度与Er³⁺离子摩尔浓度变化的关系, 当Er³⁺离子浓度为2.0mol%时, anti-Stokes PL强度最强.粉末X 关键词： 氧化钇纳米晶 anti-Stokes PL 双光子吸收