Optimizing the optical field distribution of solid immersion lens system by a continuous phase filter

In solid immersion lens (SIL) microscopy systems with high numerical aperture (NA), there always exists the aberration produced by Fresnel effects at the interface between SIL and the sample. This aberration may cause the degradation of the image of sample. We design a continuous phase filter and optimize the optical field distribution of SIL system. The numerical results show that when the continuous phase filter is used, the field distribution of SIL system can be optimized, and the focal depth and intensity of transmitted light can be increased. At the same time, the intensity of side-lobe and the resolution are kept almost unchanged.     

Photoacoustic spectroscopy for fast and sensitive ammonia detection

A photoacoustic (PA) spectrometer with H-type first longitudinal resonant cells for ammonia detection is developed. A new PA cell structure is designed to accelerate the drift velocity of the sample gas near the cell surface, so that the short response time at the flow rate of 100 sccm (standard cubic centimeter per minute) is achieved. The response time of 5 min and detection limit of 0.86 ppbv is reached for ammonia concentration measurement with a Teflon polytetrafluoroethylene (PTFE) cell. Further improvement could be expected when using a brass cell with a high quality Teflon fluorinated ethylene propylene (FEP) coating.     

光纤陀螺随机误差的滤波方案的探讨

范跃祖，宁文如，刘剑．光纤陀螺随机误差的滤波方案的探讨．数理统计与管理，１９９７，１６（４），２９～３２．光纤陀螺是新一代的光学陀螺仪，它的性能决定着惯性参照系统的精度。光纤陀螺的误差分为两大类。一类是有规律的，另一类是随机的。本文提出了两种新的用于光纤陀螺随机误差补偿的Ｋａｌｍａｎ滤波方案，考虑了两种随机模型：（Ⅰ）角速度变化为等随机的；（Ⅱ）角速度变化为等随机加速的。仿真结果表明，第二种方案对噪声起到了很好的抑制作用和滤波效果     

关于半线性热方程的死角性质

本文考虑下述问题：这里，．本文证明了在发生死角时只有有限个死角点．     

Carleman problem for two pairs of functions in a ring

We consider a particular case of the matrix Carleman problem for two pairs of functions in a ring and find a constructive solution of this problem. In addition, we propose an algorithm for the construction of solutions for two infinite systems of smooth transition and for a system of two singular equations of special type. Translated from Ukrainskii Matematicheskii Zhurnal, Vol. 49, No. 5, pp. 662–671, May, 1997     

Generalized factorized groups with dispersible subgroups

We generalize the well-known nition of complementability of subgroups. We describe the structure of nondispersible generalized factorized groups all subgroups of which are dispersible. Ukrainian Pedagogical University, Kiev. Translated from Ukrainskii Matematicheskii Zhurnal, Vol. 49, No. 8, pp. 1025–1031, August. 1997.     

粒子分辨CCT方法中的δ电子效应

提出了切伦科夫相关时间测量(CCT)中初始粒子在辐射体里产生的δ电子的干扰问题,以及降低干扰的方法. 通过模拟计算给出了北京τ-C工厂探测器初步设计中CCT的π/K分辨本领.     

Effect of p-toluensulfonic acid on oxidation of polyethylene and polyethylene-poly-p-methylstyrene blends

p-Toluensulfonic acid retards oxidation of polyethylene and, to a greater extent, of polyethylene-poly-p-methylstyrene blends. The real antioxidant is p-cresol, formed by p-toluensulfonic acid transformation in oxidizing polyethylene and, in blends, through peroxidation and subsequent acid-catalyzed decomposition of hydroperoxides of poly-p-methylstyrene.     

光放大器前置可调光学滤波器

介绍Ｆ－Ｐ干涉滤波器实现中心波长可调的两种机理，给出通过改变腔距来改变中心波工的滤波器的典型结构，并且给出了相应的电压驱动电路，实验表明选择合适的光放大器前置滤波器可以提高系统的灵敏度。     

On the validity of the amphoteric-defect model in gallium arsenide and a criterion for Fermi-level pinning by defects

Using the theoretically calculated point-defect total-energy values of Baraff and Schlüter in GaAs, anamphoteric-defect model has been proposed by Walukiewicz to explain a large number of experimental results. The suggested amphoteric-defect system consists of two point-defect species capable of transforming into each other: the doubly negatively charged Ga vacancyV _Ga ^2– and the triply positively charged defect complex (AS_Ga+V _As)³⁺, with As_Ga being the antisite defect of an As atom occupying a Ga site andV _As being an As vacancy. When present in sufficiently high concentrations, the amphoteric defect systemV _Ga ^2– /(As_Ga+V _As)³⁺ is supposed to be able to pin the GaAs Fermi level at approximately theE _v +0.6 eV level position, which requires that the net free energy of theV _Ga/(As_Ga+V _As) defect system to be minimum at the same Fermi-level position. We have carried out a quantitative study of the net energy of this defect system in accordance with the individual point-defect total-energy results of Baraff and Schlüter, and found that the minimum net defect-system-energy position is located at about theE _v +1.2 eV level position instead of the neededE _v +0.6 eV position. Therefore, the validity of the amphoteric-defect model is in doubt. We have proposed a simple criterion for determining the Fermi-level pinning position in the deeper part of the GaAs band gap due to two oppositely charged point-defect species, which should be useful in the future.