极小孔半导体激光器近场区光场分布研究

利用时域有限差分法(FDTD)计算和分析了极小孔半导体激光器输出光端面附近的光场分布,指出小孔激光器近场区域光场分布的特点,讨论了小孔大小和金属厚度对光场分布和光源分辨率的影响,得到设计和制备极小孔半导体激光器的优化方法.     

一维接触过程的光滑性与稳定性

本文证明了一维接触过程在适当的小扰动下，其极点平稳分布除在临界点λ＿ｃ处外总是光滑的．特别，一维接触过程本身的极点平稳分布关于其参数除在临界点处外总是光滑的．     

Existence of weak solution and semiclassical limit for quantum drift-diffusion model

The existence and semiclassical limit of the solution to one-dimensional transient quantum drift-diffusion model in semiconductor simulation are discussed. Besides the proof of existence of the weak solution, it is also obtained that the semiclassical limit of this solution solves the classical drift-diffusion model. The key estimates rest on the entropy inequalities derived from separation of quantum quasi-Fermi level.     

用于双光子激发荧光寿命显微成像的高重复频率皮秒扫描相机

建立了一台基于新研制的高重复频率皮秒扫描相机的双光子激发荧光寿命显微成像系统,重点介绍所研制的高重复频率皮秒扫描相机。为了在高时间分辨力的同时扩大时间测量范围,实现大面积两维空间高时间分辨取样测量,从而提高采样速率和更有效地发挥扫描相机的作用,设计和研制了一种大面积、高时间分辨力扫描变像管和一种重复频率高达1MHz的斜坡电压扫描电路。基于上述关键部件所研制的扫描相机具有重复频率高、扫描速度可调、时间分辨力高、工作面积大、非线性低、触发晃动小等优点。用钛宝石飞秒激光器作为激光脉冲源,通过脉冲提取器将76MHz的高重复频率降低为1MHz,采用可调延时器和标准具对扫描相机的时间分辨力、扫描速度和非线性进行标定。该系统的时间分辨力达到6.5ps,非线性为2.60%,可测量的时间范围从十几皮秒到几十纳秒。测量了若丹明6G和香豆素314两种标准荧光染料的荧光寿命,取得了与参考文献一致的实验结果。     

Structure for a graph with average genus

In [2], Chen et al. showed that the average genus for a graph of maximum degree at most 3 is at least 1/2 its maximum genus. In this paper, the structure for a graph of maximum degree at most 3 with average genus equal to 1/2 its maximum genus is described. Furthermore, LetH be a subgraph ofG and γ_avg(G) = γ_avg(H). It’s shown thatG can be obtained by a series operations of type I and II onH.     

Diffusion study of multi-organic layers in OLEDs by ToF-SIMS

A model organic light-emitting diodes (OLEDs) with structure of tris(8-hydroxyquinoline) aluminum (Alq₃)/N,N′-diphenyl-N,N′-bis[1-naphthy-(1,1′-diphenyl)]-4,4′-diamine (NPB)/indium tin oxide (ITO)-coated glass was fabricated for diffusion study by ToF-SIMS. The results demonstrate that ToF-SIMS is capable of delineating the structure of multi-organic layers in OLEDs and providing specific molecular information to aid deciphering the diffusion phenomena. Upon heat treatment, the solidity or hardness of the device was reduced. Complicated chemical reaction might occur at the NPB/ITO interface and results in the formation of a buffer layer, which terminates the upper diffusion of ions from underlying ITO.     

大非线性相移下光学非线性Z扫描特性的研究

采用高斯分解法(GD)对大非线性相移下的Z扫描特性进行了分析，通过对数值算法的优化，将GD推广到对脉冲入射激光下大非线性相移下的Z扫描理论分析.对不同条件下大非线性相移Z扫描曲线峰谷结构的比较，发现在大非线性相移的情况下，Z扫描曲线的峰和谷随透过光阑或入射光强变化表现出某些新的特性.随着透过光阑孔径的增加，Z扫描曲线峰的变化要明显快于谷的变化，而且在谷明显存在的情况下，峰很快消失.采用皮秒脉冲激光下的纯二硫化碳实验对理论结果加以验证，实验结果和理论分析相一致.我们的分析结果对大非线性相移下Z扫描测量有一定的指导性意义，避免在大非线性相移下对Z扫描结果产生错误的分析. 关键词： 大非线性相移 高斯分解法 Z扫描     

多级轴流压气机全工况特性计算

本文使用三维粘性流动计算软件Fine／Numeca,对某十五级轴流压气机进行了内流流场和全工况特性的数值计算尝试。分析了该压气机在设计工况和非设计工况的性能,同时把整机计算结果和前七级叶片的计算结果进行了比较。计算结果表明,当计算的级数较少时,目前的软件和硬件平台可以比较合理地预测压气机的全工况特性;而当计算的级数较多时,准确的数值模拟仍需要更为准确的多级模型和数值方法。