《影像科学与光化学》征稿简则

<正>《影像科学与光化学》由中同科学院理化技术研究所与中国感光学会联合主办。读者对象是科研及生产单位的科研人员、工程技术人员及大专院校的师生。本刊为双月刊,邮发代号2-383,国内外公开发行。学报现已被国外,如《Chemical Abstracts))(CA,核心期刊)、《剑桥科学文摘》(CSA     

只有“千虑” 才能“少失”——对数学改编试题的分析和思考

充分研究陈题,充分利用陈题,充分开发陈题,把它们改编成新的试题,这是我们编制试题的一种常见方法,也是数学教师进行教学研究、提高专业素养的一条重要途径《.中学数学教学参考》(中旬)2011年第8期刊登了刘     

Calculations on polarization properties of alkali metal atoms using Dirac–Fock plus core polarization method

A semi-empirical atomic structure model method is developed in the framework of a relativistic case. This method starts from Dirac-Fock calculations using B-spline basis set. The core-valence electron correction is then treated in a semiempirical core polarization potential. As an application, the polarization properties of alkali metal atoms, including the static polarizabilities and long-range two-body dispersion coefficients, have been calculated. Our results are in good agreement with the results obtained from ab initio relativistic many-body perturbation method and the available experimental measurements.     

以四乙基氢氧化铵为模板并通过转晶法合成高硅铝比的SSZ⁃13沸石分子筛

使用四乙基氢氧化铵为有机模板剂,以低硅铝比(nSiO2/nAl2O3)的Y分子筛为铝源,通过转晶法制备结晶度良好的SSZ?13沸石分子筛。从凝胶配比方面考察了不同原料组成对分子筛合成的影响,并通过X射线衍射(XRD)、扫描电子显微镜(SEM)及电感耦合等离子体(ICP)表征水热反应过程中的物相、形貌、硅铝比等变化,揭示分子筛合成过程。氨选择性催化还原(NH3?SCR)反应显示该分子筛具有优异的催化活性,为其工业上的广泛应用提供了可能性。     

New bifurcations of basin boundaries involving Wada and a smooth Wada basin boundary

This paper demonstrates and analyses double heteroclinic tangency in a three-well potential model, which can produce three new types of bifurcations of basin boundaries including from smooth to Wada basin boundaries, from fractal to Wada basin boundaries in which no changes of accessible periodic orbits happen, and from Wada to Wada basin boundaries. In a model of mechanical oscillator, it shows that a Wada basin boundary can be smooth.     

(一)-△~(9(12))-CapneUene类的合成中间体——光学活性5-甲基-8-羟基双环[3,3,0]2一辛酮的不对称合成研究

通过手性硝基烯胺(4)与α-甲基-δ-戊内酯烯醇锌盐发生加成消除反应解决了倍半萜Capnellene类合成中构筑不对称季碳这个难题,对映体过量(e. e. )为94％。由L-脯氨酸经14步实现了(一)-△~(9(12))-Capnellene类的合成中间体——光学活性5-甲基-8-羟基双环[3 3,0]-2-辛酮(13)的对映选择合成。     

Growth and Characterization of A1GaN/A1N/GaN HEMT Structures with a Compositionally Step-Graded A1GaN Barrier Layer

A new A1GaN/A1N/GaN high electron mobility transistor （HEMT） structure using a compositionally step-graded A1GaN barrier layer is grown on sapphire by metalorganic chemical vapour deposition （MOCVD）. The structure demonstrates significant enhancement of two-dimensional electron gas （2DEG） mobility and smooth surface morphology compared with the conventional HEMT structure with high A1 composition A1GaN barrier. The high 2DEG mobility of 1806 cm2/Vs at room temperature and low rms surface roughness of 0.220 nm for a scan area of 5μm×5 μm are attributed to the improvement of interracial and crystal quality by employing the stepgraded barrier to accommodate the large lattice mismatch stress. The 2DEG sheet density is independent of the measurement temperature, showing the excellent 2DEG confinement of the step-graded structure. A low average sheet resistance of 314.5Ω/square, with a good resistance uniformity of 0.68%, is also obtained across the 50 mm epilayer wafer. HEMT devices are successfully fabricated using this material structure, which exhibits a maximum extrinsic transconductance of 218 mS/ram and a maximum drain current density of 800 mA/mm.     

关于数列{2~n}

易知等比数列{2~n}前n项的和为S_n=a_(n+1)-2。对于这个关系式,我们有三点联想。 (一)简便求和。若a_5=32,则S_4=30。 (二)判定由关系式a_(n+1)=rS_n+S给出的数列是否为等比数列。事实上a_(n+1)=rS_n+S (1) a~n=rS_(n-1)+S (2) (1)-(2)得a_(n+1)-a_n=r(s_n-S_(n-1))=ra_n a_(n+1)/a_n=r+ 因此,r≠-1,a_1=S,{a_n}为等比数列。 (三)等比数列前n项和公式的新法推导。     

图形处理器并行计算用于离子发动机粒子模拟

 为了研究离子发动机羽流对航天器的影响,采用质点网格-蒙特卡罗碰撞方法对离子发动机羽流中的交换电荷离子进行了模拟。利用计算设备统一架构技术,开发出一套基于图形处理器的并行粒子模拟程序。随机数生成采用并行MT19937伪随机数生成器算法,电场方程使用完全近似存储格式的代数多重网格法求解。r-z轴对称坐标系中,在z=0 m处获得的电流密度均值为4.5×10^-5 A/m²,图形处理器所得结果与中央处理器模拟结果吻合。在16核心的NVIDIA GeForce 9400 GT图形显示卡上,取得相对于Intel Core 2 E6300中央处理器4.5~10.0倍的加速比。