径向剪切干涉法综合诊断光束质量研究

 为了解决高功率激光装置光束质量诊断系统的自验证问题，研究了基于空间相位调制的径向剪切干涉法综合诊断光束质量的实验应用。该方法理论上只需一台干涉仪且从单幅干涉图中获取光束的近场、相位和远场分布信息。实验结果表明，目前可以得到高分辨率的相位分布，由测量近场和相位恢复出的远场同CCD直接测量得到的远场形态相同，环围能量比曲线相当吻合，不足之处在于只能提取近场较低空间频率成分，还达不到CCD直接测量的空间分辨水平。     

线性互补问题的并行多分裂松弛迭代算法

运用矩阵多重分裂理论,同时考虑并行计算与松弛迭代法,得到一类求解线性互补问题的高效数值算法．当问题的系数矩阵为对角元为正的H-矩阵或对称半正定矩阵时,证明了算法的全局收敛性；该算法与已有算法相比,具有计算量小、计算速度快等特点,因而特别适于求解大规模问题．数值试验的结果说明了算法的有效性．     

Pt(110)表面自吸附原子能量和力的改进分析型嵌入原子法分析

采用改进分析型嵌入原子法计算了Pt(110)表面自吸附原子的能量和法向力.当Pt吸附原子位于Pt(110)表面第一层原子的二重对称洞位上0.11nm时最稳定.Pt吸附原子的最佳迁移路径是由一个二重对称洞位沿密排方向迁移到最近邻的另一个二重对称洞位.在吸附原子远离表面的过程中，将依次经过排斥、过渡和吸引等三个区域.在排斥区和过渡区，由于吸附原子与表面原子间强的相互作用势，吸附原子的能量和法向力的形貌图均为(110)面原子排列的复形，与对势理论和嵌入原子法得到的结果一致.在吸引区，由于多体相互作用及晶体中原子 关键词： 金属表面 自吸附 能量 力     

原子激光共振电离效率的估计

本文在比较严格条件下求解三能级原子系统的激光共振电离过程的速率方程,仔细分析和计算连续、准连续和脉冲激光激发与电离的效率,文中给出一些典型实验条件下的计算结果,以及电离效率随各种参数变化的趋势,本文给出的计算方法和所用的程序具有普遍的适用性,只要给出必要的参数,即可用该程序对具体的实验过程进行定量计算。 关键词：     

荧光波长对共焦显微镜成像特性的影响

导出了共焦显微镜中不同荧光波长情况下的荧光功率传输函数、三维脉冲响应函数（3D－PSF）和三维光学传递函数（3D－OTF）。结果表明，不同的荧光波长对共焦显微镜的空间截止频率、分辨率、光学传递函数存在明显的影响。当激发波长与荧光波长的比值下降到一定程度时，可以看到明显的失锥现象。     

浆纱工艺的优化和控制

应用微机现场检测、显示、采集浆纱生产过程工艺参数，采用ＳＮ比正交试验优化浆纱工艺，并对最佳工艺实施控制和生产工序进行科学管理，从而提高布机织造质量和效率，取得显著经济效益。     

Ohmic Radio-Frequency Synergy Current Drive and Transformer Recharging Experiments in the HT-7 Tokamak

Lower hybrid current drive (LHCD) experiments for investigating the interaction between lower hybrid (LH) wave and residual dc electric field were performed in extensive plasma parameter ranges in the HT-7 superconducting tokamak. The experimental results are well fitted to the Karney-Fisch theory on the efficiency of LH waves energy converted to poloidal magnetic field energy. The fraction of absorbed LH power is about 0.75 for the HT-7 machine, and the upshift of the LH-wave parallel refraction index during LHCD experiments have been derived by the optimizing fitting parameters. The LH wave is also used for the transformer recharging when the plasma current is maintained unchanged. The highest efficiency about 7% has been achieved in HT-7 machine.     

Fabrication and Characterization of Ni Thin Films Using Direct-Current Magnetron Sputtering

Ni films are deposited by using ultra high vacuum dc magnetron sputtering onto silicon substrates at room temperature, and the high-quality and high-density films are prepared. The parameters, such as thickness, density and surface roughness, are obtained by using small-angle x-ray diffraction (XRD) analyses with the Marquardt gradient-expansion algorithm. The deposition rate is calculated and the Ni single layer can be fabricated precisely. Based on the fitting results, we can find that the surface roughness of the Ni films is about 0.7nm, the densities of Ni films are around 97% and the deposition rate is 0.26nm/s. The roughness of the surface is also characterized by using an atomic force microscope (AFM). The changing trend of the surface roughness in the simulation of XRD is in good agreement with the AFM measurement.