香菇生物质基氮掺杂微孔碳材料的制备及其在超级电容器中的应用

采用简易浸泡法和一步碳化/活化法制备香菇生物质基氮掺杂微孔碳材料(NMCs),利用扫描电子显微镜(SEM)、透射电子显微镜(SEM)、X射线衍射(XRD)和X射线光电子能谱(XPS)对材料的结构形貌进行表征,并研究了其超级电容特性。测试结果表明,NMCs的微孔比表面积高达1 594 m~2·g~(-1),且拥有更高数量的含氮官能团,其吡啶型含氮官能团比例也有所提高,展现出优异的超级电容特性。在0.5 A·g~(-1)的电流密度下,其比容量高达325 F·g~(-1),当电流密度上升到20 A·g~(-1)时,其比电容仍然高达180 F·g~(-1),表现出优异的倍率性能;同时,在5 A·g~(-1)的电流密度下,电极经历5 000次充放电循环后具有97.7%的比容量保持率,展现出优异的循环稳定性。这主要归因于NMCs超高的微孔比表面积和丰富的含氮官能团。     

内积在溶液浓度测定中的应用

提出内积的溶液浓度测定方法。该方法计算已知浓度溶液透光率曲线与0号溶液（浓度最低的溶液）透光率曲线的内积ρ,确定溶液的ρ-C曲线,然后测定未知溶液的透光率曲线,计算其与0号溶液透光率曲线的内积,并利用已建立好的ρ-C曲线进行插值以估计溶液浓度。由于该方法利用了透光率曲线的全部信息,因此对溶液浓度的估计精度较高。对K2Cr2O7溶液浓度的测定实验结果表明,该方法对溶液浓度的估计相对误差小于1.00%。     

Effect of double AlN buffer layer on the qualities of GaN films grown by radio-frequency molecular beam epitaxy

This paper reports that the GaN thin films with Ga-polarity and high quality were grown by radio-frequency molecular beam epitaxy on sapphire （0001） substrate with a double A1N buffer layer. The buffer layer consists of a high-temperature （HT） A1N layer and a low-temperature （LT） A1N layer grown at 800℃ and 600℃, respectively. It is demonstrated that the HT-A1N layer can result in the growth of GaN epilayer in Ga-polarity and the LT-A1N layer is helpful for the improvement of the epilayer quality. It is observed that the carrier mobility of the GaN epilayer increases from 458 to 858cm^2/V.s at room temperature when the thickness of LT-A1N layer varies from 0 to 20nm. The full width at half maximum of x-ray rocking curves also demonstrates a substantial improvement in the quality of GaN epilavers by the utilization of LT-A1N layer.     

通信网络动态优化与控制研究

引入现代控制科学,建立了一般通信网络的状态控制模型与目标控制模型,利用庞特李亚金极大值原理,研究通信网络最优控制的基本条件、本质意义与一般实现途径,证明了哈密尔顿函数协状态变量稳定解的性质及其在通信网动态优化与控制中的作用与地位。     

用于白光LED的单一基质白光荧光粉Ca2SiO3Cl2:Eu2+，Mn2+的发光性质

用高温固相法合成了Eu²⁺，Mn²⁺共激活的Ca₂SiO₃Cl₂高亮度白色发光材料，并对其发光性质进行了研究. 该荧光粉在近紫外光激发下发出强的白色荧光，Eu^{2+中心形成峰值为419 nm和498 nm的特征宽带，通过Eu2+中心向Mn2+中心的能量传递导致了峰值为578 nm的发射，三个谱带叠加从而在单一基质中得到了白光. 激发光谱均分布在250—415 nm的波长范围，红绿蓝三个发射带的激发谱峰值分别位于385 nm，412 nm，370 nm和396 nm处，可以被InGaN管芯产生的紫外辐射有效激发. Ca₂SiO₃Cl₂:Eu2+，Mn2+是一种很有前途的单一基质白光LED荧光粉.}     

金刚石中氦、氢含量的变化及在金刚石生长中的意义

天然金刚石自中心至边缘的显微傅里叶变换红外光谱研究表明:氮和氢在金刚石中的分布是不均匀的,这说明金刚石在整个生长过程中的物质环境是有差异的;中心至边缘的含氮总量、C-H键含量的总体降低趋势表明金刚石的生长过程是一个氮、氢的消耗过程,而中部的升高变化说明金刚石生长环境中存在氮、氢的补充,但氮补充得比氢更早一些.据此,可以将金刚石的生长过程划分为早期成核与长大、中期长大及末期长大三个阶段,其中早期和末期是氮和氢的消耗阶段,中期需要进行氮和氢的补充,且氮应该更早补充.氢对金刚石的生长是有利的,氢和氮不是以氮氢化合物的形式存在于金刚石生长的物质环境中,这暗示着在高温高压合成金刚石中欲引入氢,应当避免氮氢化合物的形成.     

Effect of Reactor Pressure on Qualities of GaN Layers Grown by Hydride Vapour Phase Epitaxy

The influence of reactor pressure on GaN layers grown by hydride vapour phase epitaxy （HVPE） is investigated. By decreasing the reactor pressure from0. 7 to 0.5 mm, the GaN layer growth mode changes from the island-like one to the step flow. The improvements in structural and optical properties and surface morphology of GaN layers are observed in the step flow growth mode. The results clearly indicate that the reactor pressure, similarly to the growth temperature, is One of the important parameters to influence the qualities of GaN epilayers grown by HVPE, due to the change of growth mode.     

Effect of Temperature on the Void Growth in Pure Aluminium at High Strain-Rate Loading

With the environment temperature varying from 273 K to 773 K, the dynamic process of void growth in pure aluminium at high strain-rate loading is calculated based on the dynamic growth equation of a void with internal pressure. The result shows that the effect of temperature on the growth of void should be emphasized. Because the initial pressure of void with gas will increase and the viscosity of materials will decrease with the rising of temperature, the growth of void is accelerated. Furthermore, material inertia restrains the growth of void evidently when the diameter exceeds 10 μm. The effect of surface tension is very weak in the whole process of void growth.     

Measurement and Analysis of Spall Characteristics of High-Pure Aluminium at One-Dimensional Strain Loading

With an impact velocity varying from 196.9m/s to 317.9m/s and ratios of flyer/sample thickness of 2：4 and 3：6, the free-surface velocity profiles of the shock compressed high purity aluminium （HPA 99.999%） samples are measured with a velocity interferometer system for any reflector. Based on the vibrating features of the velocity profiles, the damage behaviour of HPA is analysed. The results indicate that the vibrating amplitude increases with increasing shock stress, and the subsequent reverberations describing the spall become more obvious. When the shock stress in the material is below a critical or smaller than the threshold level, the free-surface velocity profile replicates virtually the form of the compression pulse inside the sample. When the impact stress exceeds a critical value （1.4 GPa）, the micro damage would appear, and the free-surface velocity profile changes significantly, showing a series of short-duration reverberations in the profile. When the impact stress exceeds the threshold of damage, a compressive disturbance called the ＂spall pulse＂ appears in the free-surface velocity profile, and the subsequent reverberation becomes regular again. The measured spall strength of HPA is much higher than those of commercially pure aluminium reported in many references. In addition, the strength of HPA is similar to that of single-crystal aluminium.     

R（L）弱诱导空间及其连通性

本文研究了R(L)弱诱导空间的性质及其与R(L)底空间在连通性方面的关系.利用文献[4]中I(L)弱诱导空间引入了R(L)弱诱导空间概念,得到了R(L)弱诱导空间的本质刻划定理.它表明:R(L)弱诱导空间是连通的当且仅当其R(L)底空间是连通的.