Evolution of Weighted Networks by Duplication-Divergence Mechanism

The duplication and divergence process is ubiquitous in nature and man-made networks. Motivated by the duplication-divergence mechanism which depicts the growth of protein networks, we propose a weighted network model in which topological evolution is coupled with weight dynamics. Large scale numerical results indicate that our model can naturally generate networks with power-law-like distributions of degree, strength and weight. The degree-strength correlation is illustrated as well. These properties are in agreement well with empirical data observed in real-world systems. Furthermore, by altering the retention probability δ, weighted, structured exponential networks are realized.     

落球法测液体粘度实验公式中两补正系数的实验求法

当半径为r0的光滑小圆球,以速度v在均匀的无限宽广的液体中运动时,若速度不大,球也很小,在液体中不产生涡流的情况下,根据斯托克斯公式,球在液体中所受到的阻力F为F=6πηvr (1)式中η为液体的粘度.     

空心材料导热性能预测研究

本文建立了一种预测空心材料导热性的方法。研究了空习材料的导热性。用柱形空心材料分析了体分比和孔洞的排列方式对整体材料导热性的影响，用圆柱形，方柱形空心材料和含裂纹材料，分析了空心形状对材料导热性的影响。同他人的实验结果和某些现有的理论模型比较表明，本文方法是有效的。本文的结果很好地解释实验结果。     

一个包含Smarandache函数的方程

对于任意正整数n,我们用S(n)表示Smarandache函数,即S(n)=min{m:n|m!}.本文的主要目的是运用初等方法研究方程∑_(d|n)S(d)=n的可解性,并给出它的所有正整数解.     

低通量慢中子对Bi系超导体的辐照效应

本文研究低通量慢中子对Bi系超导体的辐照效应。实验结果表明:(1)Bi系超导体在适量慢中子辐照后,临界电流密度J_c和零电阻温度T_c0都有不同程度提高;(2)低通量慢中子和高通量快中子对Bi系超导体具有相似的辐照效应。 关键词：     

CoNiZ系列合金的结构和马氏体相变性质

利用X射线衍射研究了CoNiZ(Z=Si,Sb,Sn,Ga等)合金在不同热处理条件下的相组成.当Z元素为Sn,Sb时,材料是完全的B2结构;但Z为Si时,材料变成面心立方的γ相.形成B2还是γ相由电子浓度和原子尺寸效应两种因素共同决定.而CoNiGa的研究结果表明,在合金中除了形成B2结构的同时还容易形成γ相,常表现出两相共存的特性.对材料进行不同方式的热处理可以使合金中两相的含量有所消长,γ相含量的多少对CoNiGa合金的马氏体相变有很大的影响.分析指出,两相共存及其所带来的物性变化是CoNiGa铁磁性形状记忆合金非常有利用价值的物理性质.     

衡量网络可靠性的新模型

本文分析了传统的网络可靠性优化设计方法所存在的问题 ,给出了网络的通信通路数的定义 ,并基于网络的通信通路数给出了更能反映网络运行的实际情况的网络可靠性的定量模型 ,从而解决了传统网络可靠性优化设计方法所存在的问题 .     

珠心算手工拟题方法（一）

中国珠算协会于1999年颁发了《中国珠算协会珠算式心算鉴定标准》，其中：普通级分为十个级别，即10～1级，10级最低，1级最高。段位也分十个段位，初段～10段，初段最低，10段最高。     

Design and Fabrication of 1.06 μm Resonant-Cavity Enhanced Reflective Modulator with GaInAs/GaAs Quantum Wells

A resonant-cavity enhanced reflective optical modulator is designed and fabricated, with three groups of three highly strained InGaAs/GaAs quantum wells in the cavity, for low voltage and high contrast ratio operation. The quantum wells are positioned in antinodes of the optical standing wave. The modulator is grown in a single growth step in an molecular beam epitaxy system, using GaAs/AlAs distributed Bragg reflectors as both the top and bottom mirrors. Results show that the reflection device has a modulation extinction of 3 dB at -4.5 V bias.     

Reduction of Dislocations in GaN Epilayer Grown on Si （111） Substrates using a GaN Intermedial Layer

GaN intermedial layers grown under different pressures are inserted between GaN epilayers and AIN/Si（111） substrates. In situ optical reflectivity measurements show that a transition from the three-dimensional （3D） mode to the 2I） one occurs during the GaN epilayer growth when a higher growth pressure is used during the preceding GaN intermedial layer growth, and an improvement of the crystalline quality of GaN epilayer will be made. Combining the in situ reflectivity and transmission electron microscopy （TEM） measurements, it is suggested that the lateral growth at the transition of growth mode is favourable for bending of dislocation lines, thus reducing the density of threading dislocations in the epilayer.