论曲线的全曲率(Ⅲ)

本文中,我们证明了如下的定理: 设l是曲线c=AB的长度,φ是曲线c在A,B两点的切向量的交角,则c的全曲率其中ρ=AB/l。 本定理推广了Fenchel的定理。     

锰矿石中有效氧的快速测定

锰矿石中有效氧(通常均以MnO_2表示)的测定,前人虽进行过广泛研究,但至今似仍未找到一个简便快速与准确可靠兼有的方法。其中如应用最广的草酸盐法,不仅测定周期较长,而且由于在溶样过程中常引起草酸分解,故不易获可靠结果。文献推荐的亚铁盐法,虽优于前者,但因其均采用加热溶样的程序,必须在惰性气体保护下操作,测定条件要求较严,故未能普遍推广使用。同时,常与锰矿石相伴生的磁铁矿等,也有严重干扰。本文研究了亚铁盐-硫酸溶液在室温     

Dynamical Lie algebra method for highly excited vibrational state of asymmetric linear tetratomic molecules

The highly excited vibrational states of asymmetric linear tetratomic molecules are studied in the framework of Lie algebra. By using symmetric groupU ₁(4)U ₂(4)⊗U ₃(4), we construct the Hamiltonian that includes not only Casimir operators but also Majorana operators M₁₂, M₁₃ and M₂₃, which are useful for getting potential energy surface and force constants in Lie algebra method. By Lie algebra treatment, we obtain the eigenvalues of the Hamiltonian, and make the concrete calculation for molecule C₂HF.     

单双层共轭系统的共轭高度对等晕角的影响

 简要介绍了传统自适应光学系统的局限性和多层共轭自适应光学基本原理。模拟了单双层共轭校正系统的共轭高度，并结合平程与垂程(HV模型)两种传输状态对系统等晕角增益作了进一步的分析。对单层共轭系统，在20 km的传输距离内，在平程中整个区域都属于等晕角放大区，共轭高度的最佳位置在传输距离的中间（约10 km处），等晕角取极大值，增益效果较好；但垂程中增益效果变差，且等晕角放大区也仅在3.6 km之内。对双层共轭系统来说，第1层共轭高度的变形镜主要对近距离畸变波前进行校正，并对整个传输距离的等晕角影响很大，是双层共轭系统的关键因素；第2层共轭高度对远距离等晕角影响较大。     

Coherent Scattering of Light by Bose-Einstein Condensation in a Tight Confinement

We have observed strong scattering of a probe light by dilute Bose-Einstein condensate （BEC） ^87Rb gas in a tight magnetic trap. The scattering light forms fringes at the image plane. It is found that we can infer the real size of the condensation and the number of the atoms by modelling the imaging system. We present a quantitative calculation of light scattering by the condensed atoms. The calculation shows that the experimental results agree well with the prediction of the generalized diffraction theory, and thus we can directly observe the phase transition of BEC in a tight trap.     

Semiconductor-Optical-Amplifier-Based Inverted and Non-Inverted Wavelength Conversion at 40 Gb/s Using a Detuning Optical Bandpass Filter

We experimentally demonstrate 40Gb/s semiconductor-optical-amplifier-based tunable wavelength conversion （WC） using a detuning optical bandpass filter. Both inverted and non-inverted WCs are obtained by shifting the filter central wavelength with respect to the probe wavelength. When the filter is red shifted by 0.4nm or blue shifted by 0.3nm, the WC is non-inverted. However, when the filter is blue shifted by 0.1 nm, the WC is inverted. It is experimentally demonstrated that the WC has a tunable range covering the C-band.     

先进的微生物芯片检测系统及其应用

发展了一种先进的微生物芯片检测方法,并研制用于芯片检测的新型数字化成像扫描检测系统。采用激光诱导荧光的检测原理设计一种新颖的CCD数字化成像扫描检测系统结构,荧光信号采集端的数值孔径NA=0．72,工作距离3．22 mm,系统检测灵敏度小于每平方微米1个荧光分子。以微生物大肠杆菌和黄单胞菌检测为例,设计基因芯片,并应用所研制的芯片检测系统实现了微生物的正确鉴定,提供了一种高效的食品安全检测整体解决方法。实验结果表明两种微生物的芯片检测实验结果稳定可靠,与国外共焦扫描仪检测的结果完全一致。     

All-Optical RZ-to-NRZ Format Conversion with a Tunable Fibre Based Delay Interferometer

All-optical format conversion from return-to-zero （RZ） to non-return-to-zero （NRZ） is demonstrated with temperaturecontrolled all-fibre delay interferometer （DI） at 20 Gb/s. The operation principle is theoretical analysed with the help of numerical simulation and spectra analysis. Theoretical analysis results are consistent well with the experimental results. The format conversion can be achieved with power penalty of 0.54 dB and with output extinction ratio 20 dB.     

Growth and Characterization of A1GaN/A1N/GaN HEMT Structures with a Compositionally Step-Graded A1GaN Barrier Layer

A new A1GaN/A1N/GaN high electron mobility transistor （HEMT） structure using a compositionally step-graded A1GaN barrier layer is grown on sapphire by metalorganic chemical vapour deposition （MOCVD）. The structure demonstrates significant enhancement of two-dimensional electron gas （2DEG） mobility and smooth surface morphology compared with the conventional HEMT structure with high A1 composition A1GaN barrier. The high 2DEG mobility of 1806 cm2/Vs at room temperature and low rms surface roughness of 0.220 nm for a scan area of 5μm×5 μm are attributed to the improvement of interracial and crystal quality by employing the stepgraded barrier to accommodate the large lattice mismatch stress. The 2DEG sheet density is independent of the measurement temperature, showing the excellent 2DEG confinement of the step-graded structure. A low average sheet resistance of 314.5Ω/square, with a good resistance uniformity of 0.68%, is also obtained across the 50 mm epilayer wafer. HEMT devices are successfully fabricated using this material structure, which exhibits a maximum extrinsic transconductance of 218 mS/ram and a maximum drain current density of 800 mA/mm.     

Ab Initio Comparative Study of Zincblende and Wurtzite ZnO

By employing the first-principles pseudopotential plane-wave method, the physical properties of zincblende ZnO are investigated in comparison with those of the common wurtzite structure. Zincblende ZnO is predicted to be a direct gap semiconductor. Compared to the wurtzite structure, the zincblende ZnO is characterized by smaller bandgap and pressure coefficient, larger electron effective mass, increasing static dielectric constants and more covalent bonding. Furthermore, the optical properties including dielectric function and energy loss function of zincblende ZnO were obtained and analysed with some features. These aspects reveal promising applications of zincblende ZnO in optoelectronic devices.