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以硝酸钴、碳酸钠、尿素为原料,泡沫镍为基体,采用水热和煅烧相结合的二步法制备了一种多级花状Co_3O_4/Ni异质结构的无酶葡萄糖传感器。通过X射线衍射与扫描电镜对Co_3O_4/Ni电极的成分及形貌进行了表征,并采用循环伏安法在1mol/L KOH溶液中测试了Co_3O_4/Ni异质结构葡萄糖传感器电极的电化学性能。结果表明,通过二步法在泡沫镍表面制备的Co_3O_4呈现多级花状纳米纤维结构。将制备的Co_3O_4/Ni异质结构作为电极构建的无酶葡萄糖传感器表现出响应时间快(低于5s)、检测灵敏度高(7.4m A·(mmol/L)~(-1)·cm~(-2))、检出限低(1.17μmol/L,S/N=3)和线性检测范围宽(0~5 mmol/L)的特点。进一步的抗干扰性检测表明所制备的传感器在+0.44V vs.SCE对葡萄糖表现出良好的选择性。本文所制备的多级花状Co_3O_4基电极在无酶葡萄糖传感器的发展中有着很大的应用潜力。 相似文献
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高分子化学是研究聚合反应机理和聚合方法的一门科学,是高分子科学的基础。基本概念确切,公式应用的条件明确,有助于学生对基本概念和基本理论的深入理解,有助于高分子设计和高分子合成的科学研究。 相似文献
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Temperature dependence of biaxial strain and its influence on phonon and band gap of GaN thin film
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Hexagonal GaN epilayer grown on sapphire substrate by metal organic
chemical vapour deposition (MOCVD) is studied using Raman scattering
and photoluminescence in a temperature range from 100\,K to 873\,K.
The model of strain (stress) induced by the different lattice
parameters and thermal coefficients of epilayer and substrate as a
function of temperature is set up. The frequency and the linewidth of
$E_2^{\rm high}$ mode in a GaN layer are modelled by a theory with
considering the thermal expansion of the lattice, a symmetric decay
of the optical phonons, and the strain (stress) in the layer. The
temperature-dependent energy shift of free exciton A is determined by
using Varshni empirical relation, and the effect of strain (stress)
is also investigated. We find that the strain in the film leads to a
decreasing shift of the phonon frequency and an about
10meV-increasing shift of the energy in a temperature range from
100\,K to 823\,K. 相似文献
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