Organic light‐emitting device dark spot growth behavior analysis by diffusion reaction theory

Dark spot growth rate tracing experiments performed on an organic light‐emitting device show that moisture entering into the device is relatively properly fitted by Fick's diffusion equation in the substrate/indium tin oxide (ITO)/hole transport layer (HTL)/silver (Ag) structure. It is believed that the moisture is dissolved into the polymer layer, which results in a decrease in the diffusion coefficient in the device with the substrate/ITO/HTL/electroluminescent (EL) polymer/Ag structure. The diffusion and chemical reaction occurring in the cathode layer further decreases the diffusion coefficient in the device with the substrate/ITO/HTL/EL polymer/calcium/Ag structure. Useful parameters, such as diffusion and solubility constants, describing possible mechanisms happening during dark spot growth on organic light‐emitting diode devices are extracted. © 2001 John Wiley & Sons, Inc. J Polym Sci Part B: Polym Phys 39: 1697–1703, 2001     

导电聚合物有序超薄膜的合成及其作为有机电致发光器件空穴注入层

采用修饰多层LB膜的方法制备了导电聚合物聚-3,4-乙烯二氧噻吩/二十烷酸(PEDOT:AA)复合层状有序膜, 构筑了一种导电聚合物镶嵌的多层有序膜结构. 将这种导电聚合物有序薄膜沉积于ITO电极表面, 将其作为有机电致发光二极管(OLED)的空穴注入层, 并研究了ITO/(PEDOT:AA)/MEH-PPV/Al器件的性能. 研究结果表明, 与采用聚3,4-乙烯二氧噻吩/聚苯乙烯磺酸(PEDOT:PSS)自组装膜和旋涂膜作为空穴注入层的ITO/(PEDOT:PSS)/MEH-PPV/Al器件相比, 器件的发光效率增加, 起亮电压降低. 我们认为这是由于PEDOT:AA薄膜提供了一种有序层状结构后, 减小了ITO与MEH-PPV间的接触势垒, 改善了空穴载流子注入效率. 进一步的研究表明, 由于PEDOT:AA多层膜间靠较弱的亲水、疏水作用结合, 这种导电多层有序膜的热稳定性与普通LB膜相似, 在较高温度下发生从层状有序态到无序态的变化, 这是导致OLED器件性能发生劣化的主要原因.     

Charge injection into disordered molecular films

Light‐emitting devices made by organic or inorganic dielectric films placed between two metal electrodes emit light because of the radiative recombination of positive and negative charge carriers entering the dielectric from the anode and cathode sides, respectively, under applied voltage. Standard vapor‐deposition technology of the device construction suggests the remarkable disordering at the metal dielectric interface and in the structure of dielectric film. The structural imperfections strongly affect carrier injection and transport, device efficiency, performance, and stability. In this article we describe the effect of disordering on the injection current through the dielectric layer and discuss the implications for the device performance. © 2003 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 41: 2601–2621, 2003     

High‐efficiency doped polymeric organic light‐emitting diodes

Fabrication of polymer light‐emitting diodes based on emission from the phosphorescent molecule fac‐tris(2‐phenylpyridine) iridium doped into a poly(N‐vinyl carbazole) host are reported. For single‐layered devices with magnesium‐silver cathodes, the luminance efficiency at 20 mA/cm² was measured as 8.7 cd/A. This efficiency could be increased by over a factor of two by incorporation of evaporated small‐molecule layers into the device structure. Significant increases in device efficiency were also obtained without these evaporated layers by modification of the electrodes. Incorporation of 3,4‐poly(ethylene dioxythiophene):poly(styrene sulfonate) at the anode improved the device efficiency but had little impact on drive voltage. Insertion of lithium fluoride at the cathode resulted in no improvement in performance for magnesium‐silver and aluminum cathodes, but a significant improvement was realized in efficiency and drive voltage for calcium‐aluminum cathodes. Excellent device performance was observed for all three cathode metals used in conjunction with cesium fluoride. Through optimization of the electrodes and emitter‐layer thickness, devices exhibiting efficiencies as high as 37.3 cd/A are realized. © 2003 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 41: 2715–2725, 2003     

不同电子传输层的蓝光有机电致发光器件的性能研究

自从Tang等^[1]首次报道多层有机电致发光器件（OLED）以来,其在亮度和效率上有了质的飞跃,表明器件的结构对提高发光亮度和发光效率起着至关重要的作用,单层器件虽然具有制作简单的优点,但却存在明显缺点：（1）复合发光区靠近金属电极,该处缺陷很多,非辐射复合几率大,导致器件效率降低;（2）由于两种载流子注入不平衡,载流子的复合几率较低,因而影响器件的发光效率,要使发光层中具有高的载流子辐射复合效率,两种载流子的注入及传输能力应相当,否则传输快的一方就会直接穿过发光层到达对电极被猝灭,平衡电子和空穴的注入与传输可通过在电极和发光层之间加入载流子输运层或限制层制作多层器件的途径来实现,基于上述考虑,我们以PPCP为发光层（PPCP是一种荧光效率较高的蓝光材料^[2-4],对其进行深入研究尚未见有文献报道＿,设计了4种不同电子传输层（ETL)的三层 结构的OLED,为研究电子传输层对器件性能的影响,我们还制备了不含电子传输层的双层器件,结果表明,通过选择合适的ETL,OLED的发光亮度及发光效率会有很大程度的改善。     

Enhanced efficiency of polyfluorene derivatives: Organic–inorganic hybrid polymer light‐emitting diodes

Two novel organic–inorganic hybrid polyfluorene derivatives, poly{(9,9′‐dioctyl‐2,7‐fluorene)‐co‐(9,9′‐di‐POSS‐2,7‐fluorene)‐co‐[2,5‐bis(octyloxy)‐1,4‐phenylene]} (PFDOPPOSS) and poly{(9,9′‐dioctyl‐2,7‐fluorene)‐co‐(9,9′‐di‐POSS‐2,7‐fluorene)‐co‐bithiophene} (PFT2POSS), were synthesized by the Pd‐catalyzed Suzuki reaction of polyhedral oligomeric silsesquioxane (POSS) appended fluorene, dioctyl phenylene, and bithiophene moieties. The synthesized polymers were characterized with ¹H NMR spectroscopy and elemental analysis. Photoluminescence (PL) studies showed that the incorporation of the POSS pendant into the polyfluorene derivatives significantly enhanced the fluorescence quantum yields of the polymer films, likely via a reduction in the degree of interchain interaction as well as keto formation. Additionally, the blue‐light‐emitting polyfluorene derivative PFDOPPOSS showed high thermal color stability in PL. Moreover, single‐layer light‐emitting diode devices of an indium tin oxide/poly(3,4‐ethylene dioxythiophene):poly(styrene sulfonate)/polymer/Ca/Al configuration fabricated with PFDOPPOSS and PFT2POSS showed much improved brightness, maximum luminescence intensity, and quantum efficiency in comparison with devices fabricated with the corresponding pristine polymers PFDOP and PFT2. In particular, the maximum external quantum efficiency of PFT2POSS was 0.13%, which was twice that of PFT2 (0.06%), and the maximum current efficiency of PFT2POSS was 0.38 cd/A, which again was twice that of PFT2 (0.19 cd/A). © 2006 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 44: 2943–2954, 2006     

以C_(70)衍生物为电子受体的高效聚合物固体薄膜太阳能电池

以PC[70]BM(phenyl C71-butyric acid methyl ester)取代PC[60]BM(phenyl C61-butyric acid methyl ester)作为电子受体材料,以MEH-PPV(poly[2-methoxy-5-(2′-ethylhexyloxy)-1,4-phenylenevinylene])为电子给体材料,制成了本体异质结(bulk heterojunction,BHJ)聚合物太阳能电池.MEH-PPV/PC[70]BM器件在AM1.5G(80 mW/cm2)模拟太阳光的光照条件下得到了3.42%的能量转换效率,短路电流值达到了6.07 mA/cm2,开路电压0.85 V,填充因子为53%.通过紫外可见吸收光谱和外量子效率的研究,发现PC[70]BM作为电子受体,对扩大光谱的吸收范围和增加活性层的吸收系数有明显的作用.同时比较了不同溶剂对该体系器件性能的影响.通过原子力显微镜(AFM)、光暗导I-V曲线等研究,分析了1,2-二氯苯有利于给体相和受体相的微相分离和载流子的传输的原因.     

Hole injection/transport materials derived from Heck and sol-gel chemistry for application in solution-processed organic electronic devices

An organosilicate polymer, based on N,N'-diphenyl-N,N'-bis(4-((E)-2-(triethoxysilyl)vinyl)phenyl)biphenyl-4,4'-diamine (TEVS-TPD) with extended conjugation between the Si atom and the aromatic amine, was prepared under mild conditions via sequential Heck and sol-gel chemistry and used as an alternative to poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS), the most widely used planarizing hole injection/transport layer in solution-processed organic electronic devices. Spin-coating TEVS-TPD polymer solutions yield defect-free, uniform, thin films with excellent adhesion to the ITO electrode. Upon thermal cross-linking at 180 °C, the cross-linked polymer exhibits excellent solvent resistance and electrochemical stability. Solution-processed organic light emitting diode (OLED) devices using iridium-based triplet emitting layers and cross-linked TEVS-TPD films as a hole injection/transport layer show significantly improved performance including lower leakage current, lower turn-on voltage, higher luminance, and stability at high current density, as compared to the control device prepared with PEDOT:PSS.     

Control of cationic conjugated polymer performance in light emitting diodes by choice of counterion

Counterion exchange in cationic conjugated polyelectrolytes provides for a straightforward method to modulate the performance of these materials as the electron transport (injection) layer (ETL) in organic light emitting diodes. The bromide counterions of [(9,9-bis(6'-N,N,N-trimethylammonium)-hexyl)fluorene]bromide (PF-Br) can be easily replaced with trifluoromethylsulfonate (PF-CF3SO3), tetrakis(imidazolyl)borate (PF-BIm4) or tetrakis(3,5-trifluoromethylphenyl)borate (PF-BArF4) by a procedure that involves precipitation and washing. The performance of LEDs using MEH-PPV as the emissive layer, Al as the cathode, and the conjugated polyelectrolytes as the ETL varies in the order: PF-BIm4 > PF-CF3SO3 > PF-Br > PF-BArF4. In the case of PF-BIm4, the luminous efficiencies of the devices are similar to those of devices using Ba as the cathode. Thus, by properly choosing the counterion one can use higher work function metals that are more stable than lower work function metals without a substantial barrier to electron injection.     

聚合物电致发光二极管热特性研究

采用ANSYS有限元分析软件中热分析结构单元,对聚合物电致发光二极管(PLED)在光强为1000cd/m2时的热特性进行模拟,获得其温度场、热流分布及温度梯度的分布图,从仿真结果知PLED器件的最高温度为45.968℃,处于PFO-BT发光层,最低温度为45.95℃,处于石英玻璃基底末端.计算得出聚合物发光器件总热阻为1305℃/W,聚合物发光层至石英玻璃基底末端热阻为1℃/W.通过改变PLED器件输入功率、基底材料以及基底厚度3个参数,分别模拟得出其对PLED器件热特性的影响,仿真结果表明器件最高温度TH与输入功率P显现良好的线性关系;不同基底材料对器件温度影响小,负极端为器件主要散热通径;当基底厚度不断增加时,PLED器件最高温度随着增加,而最低温度不断减少,器件总热阻基本不变,发光层至石英基底末端热阻线性增大.     

Electrical and optical simulations of a polymer‐based phosphorescent organic light‐emitting diode with high efficiency

A comprehensive numerical device simulation of the electrical and optical characteristics accompanied with experimental measurements of a new highly efficient system for polymer‐based light‐emitting diodes doped with phosphorescent dyes is presented. The system under investigation comprises an electron transporter attached to a polymer backbone blended with an electronically inert small molecule and an iridium‐based green phosphorescent dye which serves as both emitter and hole transporter. The device simulation combines an electrical and an optical model. Based on the known highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) levels of all components as well as the measured electrical and optical characteristics of the devices, we model the emissive layer as an effective medium using the dye's HOMO as hole transport level and the polymer LUMO as electron transport level. By fine‐tuning the injection barriers at the electron and hole‐injecting contact, respectively, in simulated devices, unipolar device characteristics were fitted to the experimental data. Simulations using the so‐obtained set of parameters yielded very good agreement to the measured current–voltage, luminance–voltage characteristics, and the emission profile of entire bipolar light‐emitting diodes, without additional fitting parameters. The simulation was used to gain insight into the physical processes and the mechanisms governing the efficiency of the organic light‐emitting diode, including the position and extent of the recombination zone, carrier concentration profiles, and field distribution inside the device. The simulations show that the device is severely limited by hole injection, and that a reduction of the hole‐injection barrier would improve the device efficiency by almost 50%. © 2012 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys, 2012     

氟化吡唑啉蓝色电致发光器件的制备

自从Tang等[1]首次报道了多层有机电致发光器件以来, 人们研究了大量的新型材料[2,3], 其中较吸引人的方法是将高量子产率的荧光染料掺杂于传输层中制备电致发光器件[4～9]. 三芳基吡唑啉化合物具有较高的荧光产率和蓝色发射特性. 这些化合物具有分子内电荷传输性能, 在激发状态下分子可发生扭曲形成电子给体-受体结构[10], 因此在EL器件制备过程中既可以作为载流子传输材料, 又可以作为发光材料来应用. 虽然吡唑啉类化合物在固态下具有空穴传输特性[11], 也有较高的荧光产率, 但它们的玻璃转化转变温度较低, 在制备EL器件时, 如单独作为传输层或发射层时, 该类材料易于结晶, 从而使得器件的性能快速衰减. 如果将它们分散于聚合物等主体中, 就会避免重结晶问题. 我们在三苯基吡唑啉中引入强吸电子基团CF3, 导致分子的刚性增强和荧光强度增加, 熔点升高. 将氟化三苯基吡唑啉(FTPP)作为发光中心制作了两类EL器件, 均获得蓝光发射. FTPP分子结构见图1.     

三重态发光材料Cu4掺杂的PVK发光器件及特殊的发光增强机理研究

多种有机发光材料已被应用于电致发光（EL）器件的制备,其荧光效率远比无机发光材料高。与光激发直接产生单重态洋鬼子不同,电致发光过程是电子空穴分别由相反极性的电极注入（非成对电子注入）,三重态和单重态激子同时生成,按自旋统计理论预测,三重态和单重态子的比例为3：1。由于三重态的跃迁是自旋禁阻的,大部分有机分子的三重态激子发光效率极低,有机电致发光器件的最高交率限制在25％（对于光致发光效率100％的理想情况）。为进一步提高器件效率,人们开始设想和实施对通常认为是无效激发的75％的三重激发态进行利用,其关键是筛选出适于器件应用的高效率三重态发光材料,据此我们选择过渡金属配合物Cu4(C≡CPh4)4L2[L=1,8-bis9diphenyl phosphino)-3,6-dioxaoctane]（以下简称Cu4）进行了器件性能研究。     

8-羟基喹啉镧两亲性配合物LB膜的双层电致发光器件

以具有不同层数的两亲配合物二[2-(N-十六烷基氨基甲酰基)-8-羟基喹啉]合镧[La(HQ)₂Cl]的LB膜为发光层,PBD为电子传输层,制备了双层结构的电致发光(EL)器件:ITO/LB膜/PBD/Al.器件产生黄绿色注入式发光.LB膜的层数和沉积压对器件的性能具有重要影响.在16V激发电压下,5,11和21层LB膜双层EL器件的电流密度分别为48,29和16.4mA/cm²,启亮电压阀值为7.5,8.5和9.5V.器件的亮度随电流密度和驱动电压的增加而增加.在相同偏压下,21层LB膜EL器件的亮度大于5和11层LB膜的器件.在25mN/m沉积的LB膜制备的EL器件具有较高的亮度(1219cd/m₂)和击穿电压.     

Charge injection and photooxidation of single conjugated polymer molecules

The complex, coupled mechanisms of charge transfer and oxidative damage in organic electronic devices (such as organic light-emitting diodes (OLED), solar cells, etc.) have been elucidated by a new technique that combines single-molecule spectroscopy with charge injection from a metal electrode. The experiments employed a sandwich device architecture (Au/TPD/MEH-PPV:PMMA/SiO2/ITO), essentially a modified OLED with a charge-blocking layer (SiO2) to suppress charge injection at the ITO electrode. The fluorescence (photoluminescence) of isolated MEH-PPV conjugated polymer molecules imbedded in the device was observed to exhibit diverse time- and electrical bias-dependent effects. These include: (i) fluorescence quenching due to interactions between MEH-PPV and holes in the TPD hole-transport layer; (ii) fluorescence quenching, or "photobleaching", due to chemical defects at MEH-PPV generated by photooxidation; and (iii) a novel process, reductive "repair" of the oxidative chemical defects by externally injected carriers. These results demonstrate a very different mechanism for photobleaching of organic conjugated materials than is generally assumed to operate and, furthermore, suggest an intimate relationship among photobleaching, charge transport, and persistent photoconductivity in organic materials.     

PANI-CSA: An Easy Method to Avoid ITO Photolithography in PLED Manufacturing

In order to optimize polymer light emitting diode (PLED) performances, devices with holes injected through an Indium Tin Oxide (ITO) / Polyaniline (PANI) electrode into the polymer are much more efficient than devices fabricated with the anode made only by ITO. We demonstrated that by using doped PANI as hole injection layer in a polymer light emitting diode the manufacturing process can become simpler. Indeed, the pattern of conductive layer can be produced without ITO photolithography by UV exposition. As hole transporter layer, Poly(N-vinylcarbazole) (PVK) was spin coated over the doped PANI layer and a layer of tris (8-hydroxy) quinoline aluminum (Alq₃) was then thermally evaporated so as to form the electron transport layer. To complete the device structure, Aluminum contacts were deposited onto the organic layers by vacuum evaporation at low pressure. The layers were characterized by X-ray small-angle diffraction, IR Raman and UV-Vis spectroscopies. Devices without PANI and with PANI as HIL were studied.     

Electronic and conformational properties of the conjugated polymer MEH-PPV at a buried film/solid interface investigated by two-dimensional IR-visible sum frequency generation

We present the first measurement of the buried surface electronic states of the conjugated polymer poly[2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylenevinylene] (MEH-PPV) using two-dimensional (2D) IR-visible sum frequency generation (SFG). SFG electronic spectra were obtained by scanning the frequencies of both incident visible and IR beams and used to study the surface electronic transitions associated with the C-C stretching of benzene rings located at the backbone of MEH-PPV. Because of the surface confinement effects, the polymer conformation, and consequently the electronic states, at the film/solid interface are different from those of the bulk film. Theoretical analysis based on an oligomer model was employed to estimate the conjugation-length distributions of MEH-PPV at interfaces. Assuming a Gaussian conjugation-length distribution, it was found that the conjugation-length distribution at the MEH-PPV/solid interface was centered at 5.8 monomer units. Similar surface effects were also observed at the air/polymer interface, with a shorter average conjugation length of 5.1 monomer units.     

Synthesis of new polyfluorene copolymers with a comonomer containing triphenylamine units and their applications in white‐light‐emitting diodes

Novel conjugated polyfluorene copolymers, poly[9,9‐dihexylfluorene‐2,7‐diyl‐co‐(2,5‐bis(4′‐diphenylaminostyryl)‐phenylene‐1,4‐diyl)]s (PGs), have been synthesized by nickel(0)‐mediated polymerization from 2,7‐dibromo‐9,9‐dihexylfluorene and 1,4′‐dibromo‐2,5‐bis(4‐diphenylaminostyryl)benzene with various molar ratios of the monomers. Because of the incorporation of triphenylamine (TPA) moieties, PGs exhibit much higher HOMO levels than the corresponding polyfluorene homopolymers and are able to facilitate hole injection into the polymer layer from the anode electrode in light‐emitting diodes. Conventional polymeric light‐emitting devices with the configuration ITO/PEDOT:PSS/polymer/Ca/Al have been fabricated. A light‐emitting device produced with one of the PG copolymers (PG10) as the emitting layer exhibited a voltage‐independent and stable bluish‐green emission with color coordinates of (0.22, 0.42) at 5 V. The maximum brightness and current efficiency of the PG10 device were 3370 cd/m² (at 9.6 V) and 0.6 cd/A, respectively. To realize a white polymeric light‐emitting diode, PG10 as the host material was blended with 1.0 wt % of a red‐light‐emitting polymer, poly[9,9‐dioctylfluorene‐2,7‐diyl‐alt‐2,5‐bis(2‐thienyl‐2‐cyanovinyl)‐1‐(2′‐ethylhexyloxy)‐4‐methoxybenzene‐5′,5′‐diyl] (PFR4‐S), and poly[2‐methoxy‐5‐(2′‐ethylhexyloxy)‐1,4‐phenylenevinylene] (MEH‐PPV). The device based on PG10:PFR4‐S showed an almost perfect pure white electroluminescence emission, with Commission Internationale de l'Eclairage (CIE) coordinates of (0.33, 0.36) at 8 V; for the PG10:MEH‐PPV device, the CIE coordinates at this voltage were (0.30, 0.40) with a maximum brightness of 1930 cd/m². Moreover, the white‐light emission from the PG10:PFR4‐S device was stable even at different driving voltages and had CIE coordinates of (0.34, 0.36) at 6 V and (0.31, 0.35) at 10 V. © 2007 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 45: 1199–1209, 2007     

以膦酸酯聚芴作为阴极界面修饰层的高效聚合物红光电致发光器件

以膦酸酯聚芴为阴极界面修饰层, 高功函金属铝为阴极, 制备了一种高效聚合物红光电致发光器件. 通过X射线光电子能谱(XPS)的表征, 分析了经真空蒸镀沉积在膦酸酯聚芴表面的Al原子与下层的膦酸酯聚芴在有机物-金属界面处的作用情况, 结果表明, 在真空蒸镀金属Al的过程中, 在有机物-金属界面处形成了一种氧/铝复合物. 研究了这种氧/铝复合物对器件光电性能的影响, 结果表明, 氧/铝复合物的产生提高了阴极电子的注入, 使器件效率得到了很大提高. 与以Ca/Al为阴极的传统器件相比, 以膦酸酯聚芴/Al为阴极的聚合物电致发光器件的效率提高了75%, 达到7.0 cd/A.