石墨炔修饰的ZnO薄膜紫外探测器

制备了石墨炔修饰的金属-半导体-金属结构的ZnO紫外探测器,研究了不同旋涂次数的石墨炔修饰对探测器性能的影响。实验结果表明,石墨炔修饰的探测器比未修饰器件的光电流提高4倍,暗电流降低2个数量级,同时探测器的响应度和探测率也明显提高,其中旋涂2次的石墨炔修饰的器件特性为最优。在10 V偏压下,旋涂2次的石墨炔修饰的探测器响应度高达1759 A·W⁻¹,探测率高达4.23× 10¹⁵ Jones,这是迄今为止报导过的溶胶-凝胶法制备的ZnO紫外探测器的最高值。经过对探测器各项性能的测试分析可知,石墨炔修饰的ZnO探测器性能的提高归因于石墨炔良好的空穴传输特性。暗环境下ZnO与石墨炔界面处形成p-n结,使探测器的暗电流大幅降低;光照条件下光生空穴在石墨炔中聚集,减少了电子空穴对的复合,有效提高了器件的光电流。由于石墨炔修饰减少了ZnO表面的氧分子吸附和解吸附过程,器件的响应速度也明显加快。     

Ultraviolet photodetector based on ZnO nanorods grown on a flexible PDMS substrate

A flexible, reproducible, sensitive and low-cost ultraviolet (UV) detector has been fabricated based on zinc oxide (ZnO) nanorods grown on a patterned polydimethylsiloxane (PDMS) substrate. The substrate was seeded with ZnO nanoparticles synthesised via simple low-temperature hydrothermal method using pomegranate peel extract as a reducing agent. The produced ZnO-nanorods/PDMS (ZnO-NR/PDMS) samples were tested for their UV-sensing properties. Samples were characterised using scanning electron microscopy, X-ray diffraction, I–V characteristics, UV-Vis spectroscopy and photoluminescence measurements. The UV photoresponse mechanism of prototype UV detector was analysed. The detector exhibited quite high on/off ratios between photoresponse current and dark current. With the flexible PDMS substrate, the detector photoresponse was tested with and without bending and exhibited a very slight change in the photoresponse current. The detector current–time response was also tested under various UV light intensities for three test cycles to examine the detector stability, hysteresis behaviour and performance. It is anticipated that the fabrication of ZnO-NR/PDMS UV detector may have significant potential application in flexible optoelectronic devices.     

Studies of photosensitive alignment layer based on ladder‐like polysilsequioxane liquid‐crystal devices using atomic force microscopy/force curve

Atomic force microscopy (AFM)/force curve measurements were used to study the photochemical process of UV‐treated (0, 10, 20, 30 and 60 min) organic thin films that were prepared from azobenzene and cinnamate side‐chain co‐grafted ladder‐like polysilsequioxanes (LPS). The morphological data of the thin films describe the changing process on the surface of the thin film. The statistical results of the adhesion force of the thin films further demonstrate the intermolecular characteristics of the thin films. A photosensitive thin film after UV exposure for 20 min would be a better material with a preferred orientation that can be used to make liquid‐crystal devices. Copyright © 2003 John Wiley & Sons, Ltd.     

Reversible wettability of a chemical vapor deposition prepared ZnO film between superhydrophobicity and superhydrophilicity

A superhydrophobic ZnO thin film was fabricated by the Au-catalyzed chemical vapor deposition method. The surface of the film exhibits hierarchical structure with nanostructures on sub-microstructures. The water contact angle (CA) was 164.3 degrees, turning into a superhydrophilic one (CA < 5 degrees) after UV illumination, which can be recovered through being placed in the dark or being heated. The film was attached tightly to the substrate, showing good stability and durability. The surface structures were characterized by scanning electron microscopy and atomic force microscopy.     

一种新颖的ZnO纳米结构的自组装合成及发光性能

采用水热法制备了花生状ZnO微米棒, 通过XRD, EDX和FE-SEM等技术分析了其物相组成、形貌及尺寸; 通过变温荧光光谱测试及对所得谱图的高斯拟合研究了该ZnO微米棒的荧光性能, 并将其在300 K时所得的谱图与常规室温荧光谱图进行了比较. XRD, EDX及FE-SEM测试结果表明, 该产物为长约10 μm, 直径约2 μm的花生状六方纤锌矿ZnO微米棒; 荧光测试结果表明, 该ZnO微米棒有紫外峰、紫峰和绿峰3个发光峰, 当温度从8 K升至300 K时, 各峰的强度均有所减弱, 同时紫外峰出现蓝移, 绿峰出现红移, 紫峰峰位出现特殊的“S”形(红移-蓝移-红移)移动. 并对各峰的产生及随温度变化的规律进行了探讨.     

Photoconductive UV Detectors Based on ZnO Films Prepared by Sol-Gel Method

Highly c-axis oriented ZnO thin films were deposited on single crystal Si (111) substrates by sol-gel method. The photoconductive UV detectors based on ZnO thin films, being a metal-semiconductor-metal (MSM) structure with interdigital (IDT) configuration, were fabricated by using Au as contact metal. The characteristics of dark and photocurrent of the UV detector, the UV photoresponse of the detector were investigated. The linear current-voltage (I-V) characteristics under both forward and reverse bias exhibit ohmic metal-semiconductor contacts. Under illumination using monochromatic light with a wavelength of 365 nm, photo-generated current arrived at 44.89 μ A at a bias of 6 V. The detector exhibits an evident wide-range spectral responsivity and shows a trend similar to that in photoluminescence (PL) spectrum. PL spectrum of detector exhibits two peaks, one is the near band edge emission, and another is the deep-level emission in the visible region.     

TiO2和ZnO表面CO光催化氧化活性研究

在TiO2和ZnO表面CO光催化氧化研究中发现,365 nm紫外光照下TiO2表面无活性,而ZnO表面却有明显的CO光催化氧化活性.研究表明,主要是由于紫外光照下,ZnO光分解而TiO2没有光分解,从而在表面产生不同吸附形态的氧所致.而且,ZnO表面CO光催化氧化反应活性可在27 h内保持稳定,暗示气相光催化反应中,ZnO不会因为光腐蚀而使其催化活性降低.     

Photoswitching of single association force between a pair of photoionizable spirobenzopyrans

We have measured the single intermolecular force of a typical photoionizable molecule, spirobenzopyran, by means of atomic force microscopy, which has proven to be useful in measuring directly single molecular forces. The spirobenzopyran moiety was immobilized covalently on both Au-coated probe tips and substrates by use of a self-assembled monolayer of a hexanethiol derivative incorporating a terminal spirobenzopyran moiety, 1'-(6'-mercaptohexyl)-3',3'-dimethylindolino-6-nitrospiro-(2H-1-benzopyran-2,2'-indoline). Force curve measurements were carried out using the spirobenzopyran-modified probe tip and substrate under dark conditions and in situ UV light irradiation. The adhesion force observed in a polar solvent (i.e., ethanol) was increased substantially under in situ UV light irradiation, which caused photoisomerization of the spirobenzopyran moiety bound to both tip and substrate from its electrically neutral spiropyran form to the corresponding zwitterionic merocyanine one. Statistical analyses of the observed force by autocorrelation technique have revealed that the photoionization enhanced by UV light caused a remarkable increase in the single intermolecular force of the photochromic compound.     

均匀沉淀法制备氧化锌纳米棒

采用均匀沉淀法制备了氧化锌纳米棒,用XRD,TEM,PL等检测手段对样品进行了表征.结果表明:所得样品为长约100 nm,宽约30 nm的纤锌矿结构氧化锌纳米棒,颗粒分布均匀.其在可见光区比紫外区的荧光发射显著增强.     

Local surface charge dissipation studied using force spectroscopy method of atomic force microscopy

We propose herein a method to study local surface charge dissipation in dielectric films using force spectroscopy technique of atomic force microscopy. By using a normalization procedure and considering an analytical expression of the tip‐sample interaction force, we could estimate the characteristic time decay of the dissipation process. This approach is completely independent of the atomic force microscopy tip geometry and considerably reduces the amount of experimental data needed for the calculation compared with other techniques. The feasibility of the method was demonstrated in a freshly cleaved mica surface, in which the local charge dissipation after cleavage followed approximately a first‐order exponential law with the characteristic time decay of approximately 7–8 min at 30% relative humidity (RH) and 2–3.5 min at 48% RH. Copyright © 2015 John Wiley & Sons, Ltd.     

Evolution of surface topography and optical band gap of ZnO film deposited on NiO/Si(100)

Evolution of surface features and optical band gap of ZnO thin films deposited on different NiO/Si(100) are reported. In order to create different initial microstructure, we first deposited NiO film on Si(100) at 3 different temperatures (400°C, 650°C, and 700°C) by pulsed laser deposition. These NiO/Si(100) films are used as substrate for the deposition of ZnO films. Combining the results obtained from grazing incidence X‐ray diffraction, atomic force microscope, and UV‐Visible characterization, our study indicated that the microstructure of the substrate takes the important role in dictating properties of the film. Our study also indicated that one needs to choose appropriate synthesis condition to achieve good quality ZnO films.     

等离子体增强MOCVD法生长ZnO薄膜

利用等离子体增强MOCVD法生长出 ZnO薄膜，用X射线衍射谱观察到位于 2θ34．56°处（0002）的衍射峰，表明ZnO沿c方向呈柱状生长．通过荧光光谱，观察到来自于激子的高强度的近带边紫外光发射（375um）．紫外发射光强度与深能级复合发射光强度比高达 193，显示出材料的高质量，并通过原子力显微镜加以验证．为了实现高阻ZnO薄膜，利用高温富氧分段退火和用N2 气进行掺氮两种方法生长高阻ZnO薄膜．结果表明，电阻率由0．65 Ω·cm分别升高到1100 Ω·cm（分段退火）和5×104Ω·cm（掺氮）．进一步比较发现，掺氮的样品不仅电阻率高，而且光荧光特性好，显示出更高的薄膜质量．     

An investigation of Zn/ZnO:Al/p-Si/Al heterojunction diode by sol–gel spin coating technique

Present study shows the structural, morphological, optical characterization of sol–gel spin coated ZnO:Al film and investigation of device efficiency of Zn/ZnO:Al/p-Si/Al heterojunction diode structure. X-ray diffraction study indicates that film has hexagonal polycrystalline structure with (002) preferential direction. Atomic force microscope and scanning electron microscope images exhibit that surface of ZnO:Al/p-Si consists of homogenously scattered nanoparticles. The surface roughness of ZnO:Al film is found to be 15.24 nm. The band gap value of ZnO:Al film deposited on glass substrate is calculated to be 3.34 eV. The electrical characterization of Zn/ZnO:Al/p-Si/Al heterojunction structure is made by current–voltage (I–V) and capacitance–voltage (C–V) measurements. From these measurements, the heterojunction structure shows a rectifying behavior under a dark condition. The ideality factor and barrier height of Zn/n-ZnO:Al/p-Si/Al structure are calculated as 3.23 and 0.68 eV. The heterojunction structure have diode characteristic with rectification ratio at 64.4 at +2.0 V in the dark. The results suggest that Zn/ZnO:Al/p-Si/Al heterojunction diode can be successfully used in many optoelectronic applications.     

Atomic force microscopy imaging of ZnO nanodots deposited on quartz by sparking off different tip shapes

We have demonstrated a simple method for depositing ZnO nanodots on quartz substrates by sparking off different tip shapes at voltages of 2, 4 and 6 kV in air at atmospheric pressure. A comparison was made among the three tip shapes: the sharp tip, the conical tip and the dull tip. The surface morphology was then observed by atomic force microscopy. The mean height of the randomly distributed dots of approximately 8 nm was successfully deposited from the sharp tip at 6 kV. Characterizations by UV–vis spectroscopy and Raman spectroscopy have confirmed the presence of ZnO and the quality improvement by annealing treatments. Moreover, a nucleation mechanism of the nanodot formation is discussed. Copyright © 2006 John Wiley & Sons, Ltd.     

ZnO/Ag复合膜的制备及其润湿性转换研究

利用溶胶-凝胶技术制备了ZnO/Ag复合膜. 采用X射线粉末衍射和扫描电子显微镜对其物相组成、 晶型结构以及表面形貌进行了表征, 采用接触角测试仪对其润湿性进行了表征, 并研究了紫外光照射下Ag的掺杂量对ZnO薄膜润湿性的影响. 结果表明, 当Ag掺杂量(摩尔分数)为5%时, 所得膜的润湿性转换速率最快, 紫外光照3 h后, 其润湿性由超疏水性转换为亲水性, 黑暗中放置5 d后, 亲水性再次转换为超疏水, 实现了润湿性的可逆转换.     

Reversible super-hydrophobicity to super-hydrophilicity transition of aligned ZnO nanorod films

Remarkable surface wettability transition occurs with an inducement of ultraviolet (UV) for aligned ZnO nanorod films. The inorganic oxide films, which show super-hydrophobicity (left), become super-hydrophilic (right) when exposed to UV illumination. After the films are placed in the dark, the wettability evolves back to super-hydrophobicity. This reversible effect is ascribed to the cooperation of the surface photosensitivity and the aligned nanostructure. Such special property will greatly extend the applications of ZnO films.     

The quest for the best nonpolarizable water model from the adaptive force matching method

The recently introduced adaptive force matching (AFM) method is used to develop a significantly improved pair‐wise nonpolarizable potential for water. A rigid version of the potential is also presented to enable larger time steps for biological simulations. In this work, it is demonstrated that the AFM method can be used to systematically assess the importance of each functional term during the construction of a force field. For a water potential, it is established that a single off‐atom charge center (M) in the plane of water outperforms two out‐of‐plane charge sites for reproducing intermolecular forces. The four‐site pair‐wise nonpolarizable force field developed in this work rivals some of the most sophisticated polarizable models in terms of reproducing accurate ab initio forces. The force fields are parameterized to perform best in the temperature range from 0 to 40°C. Equilibrium and dynamical properties calculated with the flexible and rigid force fields are in good agreement with experimental results. For the flexible model, the agreement improves when path integral simulation is performed. These force fields provide high‐quality results at a very low computational cost and are thus well suited to atomistic scale biological simulations. The AFM method provides a mechanism for selecting important terms in force field expressions and is a very promising tool for producing accurate force fields in condensed phases. © 2010 Wiley Periodicals, Inc. J Comput Chem, 2011     

ZnO纳米环的可控合成

以六次甲基四胺(Hexamethylenetetramine, C6H12N4)和水合硝酸锌[Zn(NO3)2·2H2O]为原料, 表面活性剂聚丙烯酰胺-氯化二烯丙基二甲基铵[poly(acrylamide-co-diallyldimethylammonium chloride, 缩写为PAM-CTAC]为形貌控制剂, 采用液相沉淀法合成了ZnO纳米环. 产物的结构与形貌经X射线粉末衍射(XRD)和扫描电子显微镜(SEM)表征. 研究了不同实验条件(如表面活性剂的浓度、反应物浓度、反应温度和反应时间等)对产物形貌与尺寸的影响. 讨论了PAM-CTAC作用下ZnO纳米环可能的形成机理. 结果表明, 合成产物为六方Wurtzite型结构的ZnO纳米环, 环内径约为220 nm, 壁厚约为70 nm. 反应物浓度、反应温度对ZnO纳米环的形成以及纳米环的尺寸都有一定的影响, 但起关键作用的是PAM-CTAC. 通过改变PAM-CTAC的浓度, 能有效地实现ZnO纳米环的可控合成. 室温荧光光谱显示, ZnO纳米环的紫外发射峰具有较窄的半高宽(FWHM)(约7 nm), 表明合成产物具有较窄的尺寸分布.     

Development and testing of a general amber force field

We describe here a general Amber force field (GAFF) for organic molecules. GAFF is designed to be compatible with existing Amber force fields for proteins and nucleic acids, and has parameters for most organic and pharmaceutical molecules that are composed of H, C, N, O, S, P, and halogens. It uses a simple functional form and a limited number of atom types, but incorporates both empirical and heuristic models to estimate force constants and partial atomic charges. The performance of GAFF in test cases is encouraging. In test I, 74 crystallographic structures were compared to GAFF minimized structures, with a root-mean-square displacement of 0.26 A, which is comparable to that of the Tripos 5.2 force field (0.25 A) and better than those of MMFF 94 and CHARMm (0.47 and 0.44 A, respectively). In test II, gas phase minimizations were performed on 22 nucleic acid base pairs, and the minimized structures and intermolecular energies were compared to MP2/6-31G* results. The RMS of displacements and relative energies were 0.25 A and 1.2 kcal/mol, respectively. These data are comparable to results from Parm99/RESP (0.16 A and 1.18 kcal/mol, respectively), which were parameterized to these base pairs. Test III looked at the relative energies of 71 conformational pairs that were used in development of the Parm99 force field. The RMS error in relative energies (compared to experiment) is about 0.5 kcal/mol. GAFF can be applied to wide range of molecules in an automatic fashion, making it suitable for rational drug design and database searching.     

Piezoelectricity of ZnO Films Prepared by Sol-Gel Method

"ZnO piezoelectric thin films were prepared on crystal substrate Si(111) by sol-gel technology, then characterized by scanning electron microscopy, X-ray diffraction and atomic force microscopy (AFM). The ZnO films characterized by X-ray diffraction are highly oriented in (002) direction with the growing of the film thickness. The morphologies, roughness and grain size of ZnO film investigated by AFM show that roughness and grain size of ZnO piezoelectric films decrease with the increase of the film thickness. The roughness dimension is 2.188-0.914 nm. The piezoelectric coeocient d33 was investigated with a piezo-response force microscope (PFM). The results show that the piezoelectric coeocient increases with the increase of thickness and (002) orientation. When the force reference is close to surface roughness of the films, the piezoelectric coefficient measured is inaccurate and fluctuates in a large range, but when the force reference is big, the piezoelectric coeocient d33 changes little and ultimately keeps constant at a low frequency."