Solid State Reactions in the Al‐Si‐C System

The study is aimed to prevent the formation of the aluminium carbide compound Al₄C₃ that negatively affects Al‐Si‐C based materials. The reaction products of elementary aluminium, silicon and graphite as well as aluminium with either β‐SiC or α‐SiC without and with graphite at temperatures 1200°‐2500 °C under different atmospheres and reaction times were characterized using powder X‐ray diffraction and scanning electron microscopy (SEM) with an energy dispersive X‐ray (EDX) analysis. The results of the powder diffraction study show that under the conditions (1450 °C; 8 h; vacuum) the formation of Al₄C₃ could be prevented. The reaction products at those conditions consist of the ternary compound Al₄SiC₄ besides SiC and residual carbon. The ternary aluminium silicon carbide Al₄SiC₄ crystallizes in a hexagonal crystal system with unit cell dimensions a = 327.64(4) pm, b = 2171.2(6) pm and space group P6₃mc (no. 186). The crystal structure of Al₄SiC₄ is isostructural with Al₅C₃N and consists of layers of Al₄C₃ and SiC.     

Template‐Synthesized Porous Silicon Carbide as an Effective Host for Zeolite Catalysts

A facile method has been developed for the fabrication of porous silicon carbide (SiC) by means of sintering a mixture of SiC powder and carbon pellets at a relatively lower temperature, that is, 1450 °C, in air. The pore density and the total pore volume of the resulting porous SiC could be tuned by changing the initial SiC/C weight ratio. The structure evolution and the associated property changes during the preparation were examined through X‐ray diffraction, scanning electron microscopy, thermogravimetric analysis, ²⁹Si magic‐angle spinning (MAS) NMR spectroscopy, and mercury‐intrusion porosimetry analyses. Silica and SiO_xC_y ceramics formed in situ during the calcination process acted as binders of the porous SiC grains. The porous SiC can be used as a host for the growth of ZSM‐5 zeolite crystals to form the ZSM‐5/porous‐SiC composite material. After loading another catalytic active component of molybdenum, a novel catalytic material, Mo‐ZSM‐5/porous‐SiC, was obtained, which exhibited improved catalytic activity in the methane dehydroaromatization reaction.     

Ion‐beam synthesis of 3C‐SiC surface layers on silicon

The attempt to grow 3C‐SiC thin films on silicon substrates has become an area of significant scientific interest, largely as a consequence of the impressive electrical properties that this polytype displays. In this paper, we have utilized low‐energy (20 keV) high‐fluence carbon implantation and a subsequent annealing step to form layers of 3C‐SiC directly on a silicon surface, and have investigated the effect of implantation fluence on the resultant materials properties. The quality of the Si/SiC interface is shown to be highly fluence‐dependent, with the formation of voids decreasing significantly with increased fluence. The conversion of carbon into 3C‐SiC is found to be most efficient at near‐stoichiometric concentrations, while at higher implantation fluences clusters of excess carbon are discovered to form within the silicon and to diffuse to the surface of the grown 3C‐SiC layer upon annealing. Copyright © 2011 John Wiley & Sons, Ltd.     

Identification of selective oxidation of TiC/SiC composite with X-ray diffraction and Raman spectroscopy

Open cell 3D titanium carbide/silicon carbide (TiC/SiC) composite was oxidised to titanium oxide/silicon carbide (TiO₂/SiC) following different temperature profiles in a thermal gravimetric analysis (TGA) instrument in continuous air-flow and static air (oven) environments. The TiC oxidation to anatase, starting at temperatures over 450°C, was confirmed by Raman spectroscopy and X-Ray diffraction (XRD). By increasing the temperature, the mass fraction of anatase diminished, while the mass fraction of rutile increased. SiC oxidation started at 650°C when a mixture of TiO₂/SiO₂/SiC could be observed by Raman, XRD and HRTEM.     

Chemical surface passivation of 3C‐SiC nanocrystals: A first‐principle study

The effect of the chemical surface passivation, with hydrogen atoms, on the energy band gap of porous cubic silicon carbide (PSiC) was investigated. The pores are modeled by means of the supercell technique, in which columns of Si and/or C atoms are removed along the [001] direction. Within this supercell model, morphology effects can be analyzed in detail. The electronic band structure is performed using the density functional theory based on the generalized gradient approximation. Two types of pores are studied: C‐rich and Si‐rich pores surface. The enlargement of energy band gap is greater in the C‐rich than Si‐rich pores surface. This supercell model emphasizes the interconnection between 3C‐SiC nanocrystals, delocalizing the electronic states. However, the results show a clear quantum confinement signature, which is contrasted with that of nanowire systems. The calculation shows a significant response to changes in surface passivation with hydrogen. The chemical tuning of the band gap opens the possibility plenty applications in nanotechnology. © 2010 Wiley Periodicals, Inc. Int J Quantum Chem 110:2455–2461, 2010     

Chemical etching of hot‐pressed p‐type polycrystalline SiC surfaces by HF/K2S2O8 solutions

In this work, an experimental study on the etching of p‐type hot‐pressed silicon carbide (SiC) was carried out in HF/K₂S₂O₈ solutions. The SiC wafers used in this work were p‐type polycrystalline materials, supplied by Goodfellow, with an acceptor concentration of 2.31 × 10¹² cm^?3. The SiC substrate was a hot‐pressed material, the latter realized from a mixture of 1 part of SiO₂ with 3 parts of C (carbon) ‘1SiO₂ + 3C’ heated in an oven at 2500 °C. In order to facilitate the chemical etching of the SiC substrate, a thin aluminium film was deposited on the SiC substrate. The morphology of the etched surface was examined with varying K₂S₂O₈ concentration. The surfaces of the etched samples were analysed using secondary ions mass spectrometry (SIMS), scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FT‐IR) and photoluminescence (PL). The surface morphology of the samples etched in HF/K₂S₂O₈ is shown to depend on the solution composition. The investigation of the effect of the HF/K₂S₂O₈ solution on SiC samples shows that as K₂S₂O₈ concentration increases, the chemical etching reveals defects with random geometry. Finally, chemical etching of p‐type SiC induces a decrease in the PL intensity, which indicates clearly the defects on the polycrystalline SiC surface. In addition, the result is very interesting, as to date no chemical etching solution at low temperature (<100 °C) has been developed for SiC. Finally, we have proposed a dissolution mechanism of SiC in 2HF/1K₂S₂O₈ solutions. Copyright © 2007 John Wiley & Sons, Ltd.     

Epitaxy‐like orientation of nanoscale Ag islands grown on air‐oxidized Si(110)‐(5 × 1) surfaces

Growth of Ag islands under ultra‐high vacuum condition on air‐oxidized Si(110)‐(5 × 1) surfaces has been investigated by in situ reflection high energy electron diffraction and ex situ scanning electron microscopy and cross‐sectional transmission electron microscopy. A thin oxide is formed on Si via exposure of the clean Si(110)‐(5 × 1) surface to air. The oxide layer has a short range order. Deposition of Ag at different thicknesses and at different substrate temperatures reveal that the crystalline qualities of the Ag film are almost independent of the thickness of the Ag layer and depend only on the substrate temperature. Ag deposition at room temperature leads to the growth of randomly oriented Ag islands while preferred orientation evolves when Ag is deposited at higher temperatures. For deposition at 550 °C sharp spots in the reflection high energy electron diffraction pattern corresponding to an epitaxial orientation with the underlying Si substrate are observed. The presence of a short range order on the oxidized surface apparently influences the crystallographic orientation of the Ag islands. Copyright © 2011 John Wiley & Sons, Ltd.     

Effects of gold‐induced crystallization process on the structural and electrical properties of germanium thin films

Gold‐induced (Au‐) crystallization of amorphous germanium (α‐Ge) thin films was investigated by depositing Ge on aluminum‐doped zinc oxide and glass substrates through electron beam evaporation at room temperature. The influence of the postannealing temperatures on the structural properties of the Ge thin films was investigated by employing Raman spectra, X‐ray diffraction, and scanning electron microscopy. The Raman and X‐ray diffraction results indicated that the Au‐induced crystallization of the Ge films yielded crystallization at temperature as low as 300°C for 1 hour. The amount of crystallization fraction and the film quality were improved with increasing the postannealing temperatures. The scanning electron microscopy images show that Au clusters are found on the front surface of the Ge films after the films were annealed at 500°C for 1 hour. This suggests that Au atoms move toward the surface of Ge film during annealing. The effects of annealing temperatures on the electrical conductivity of Ge films were investigated through current‐voltage measurements. The room temperature conductivity was estimated as 0.54 and 0.73 Scm⁻¹ for annealed samples grown on aluminum‐doped zinc oxide and glass substrates, respectively. These findings could be very useful to realize inexpensive Ge‐based electronic and photovoltaic applications.     

Non‐hydrogenated amorphous germanium carbide with adjustable microstructure and properties: a potential anti‐reflection and protective coating for infrared windows

Amorphous non‐hydrogenated germanium carbide (a‐Ge_1?xC_x) films have been deposited using magnetron co‐sputtering technique by varying the sputtering power of germanium target (P_Ge). The effects of P_Ge on composition and structure of the a‐Ge_1?xC_x films have been analyzed. The FTIR spectrum shows that the C–Ge bonds were formed in the a‐Ge_1?xC_x films according to the absorption peak at ~610 cm^?1. The Raman results indicate that the amorphous films also contain both Ge and C clusters. The XPS results reveal that the carbon concentration decreased as P_Ge increased from 40 to 160 W. The fraction of sp³ C–C bonds remains almost constant when increasing P_Ge from 40 to 160 W. The sp² C–C content of a‐Ge_1?xC_x film decreases gradually to 35.9% with P_Ge up to 160 W. Nevertheless, sp³ C–Ge sites rose with increasing P_Ge. Furthermore, the hardness and the refractive index gradually increased with increasing P_Ge. The excellent optical transmission of annealed a‐Ge_1–xC_x double‐layer coating at 400 °C suggests that a‐Ge_1?xC_x films can be used as an effective anti‐reflection coating for the ZnS IR window in the wavelength region of 8–12 µm, and can endure higher temperature than hydrogenated amorphous germanium carbide do. Copyright © 2012 John Wiley & Sons, Ltd.     

Rheological and thermal behaviours of a hyperbranched polycarbosilane

A hyperbranched polymer, a precursor of silicon carbide (SiC), was successfully synthesized using a hydrosilylation reaction with Karstedt's catalyst. This reaction was optimized with the use of a rheometer coupled with an infrared spectrometer. The polymeric precursor was characterized using NMR and Fourier transform infrared spectroscopies, and dynamic rheology. The polymerization reaction was followed in situ by combined rheological and infrared measurements, indicating a gel‐like behaviour for alkene conversions higher than 0.55. Overall second‐order kinetics was determined for the hydrosilylation reaction. Pyrolysis at 1400 °C led to porous materials with β‐SiC and free carbon.     

Functional copolymer/organo‐MMT nanoarchitectures. XIX. Nanofabrication and characterization of poly(MA‐alt‐1‐octadecene)‐g‐PLA layered silicate nanocomposites with nanoporous core–shell morphology

Novel bioengineering functional copolymer‐g‐biopolymer‐based layered silicate nanocomposites were fabricated by catalytic interlamellar bulk graft copolymerization of L‐lactic acid (LA) monomer onto alternating copolymer of maleic anhydride (MA) with 1‐octadecene as a reactive matrix polymer in the presence of preintercalated LA…organo‐MMT clay (reactive ODA‐MMT and non‐reactive DMDA‐MMT) complexes as nanofillers and tin(oct)₂ as a catalyst under vacuum at 80°C. To characterize the functional copolymer layered silicate nanocomposites and understand the mechanism of in situ processing, interfacial interactions and nanostructure formation in these nanosystems, we have utilized a combination of variuous methods such as FT‐IR spectroscopy, X‐ray diffraction (XRD), dynamic mechanical (DMA), thermal (DSC and TGA‐DTG), SEM and TEM morphology. It was found that in situ graft copolymerization occurred through the following steps: (i) esterification of anhydride units of copolymer with LA; (ii) intercalation of LA between silicate galleries; (iii) intercalation of matrix copolymer into silicate layers through in situ amidization of anhydride units with octadecyl amine intercalant; and (iv) interlamellar graft copolymerization via in situ intercalating/exfoliating processing. The main properties and observed micro‐ and nanoporous surface and internal core–shell morphology of the nanocomposites significantly depend on the origin of MMT clays and type of in situ processing (ion exchanging, amidization reaction, strong H‐bonding and self‐organized hydrophobic/hydrophilic interfacial interactions). This developed approach can be applied to a wide range of anhydride‐containing copolymers such as random, alternating and graft copolymers of MA to synthesize new generation of polymer‐g‐biopolymer silicate layered nanocomposites and nanofibers for nanoengineering and nanomedicine applications. Copyright © 2014 John Wiley & Sons, Ltd.     

The morphology of ceramic phases in BxC-SiC-Si infiltrated composites

The present communication is concerned with the effect of the carbon source on the morphology of reaction bonded boron carbide (B₄C). Molten silicon reacts strongly and rapidly with free carbon to form large, faceted, regular polygon-shaped SiC particles, usually embedded in residual silicon pools. In the absence of free carbon, the formation of SiC relies on carbon that originates from within the boron carbide particles. Examination of the reaction bonded boron carbide revealed a core-rim microstructure consisting of boron carbide particles surrounded by secondary boron carbide containing some dissolved silicon. This microstructure is generated as the outcome of a dissolution-precipitation process. In the course of the infiltration process molten Si dissolves some boron carbide until its saturation with B and C. Subsequently, precipitation of secondary boron carbide enriched with boron and silicon takes place. In parallel, elongated, strongly twinned, faceted SiC particles are generated by rapid growth along preferred crystallographic directions. This sequence of events is supported by X-ray diffraction and microcompositional analysis and well accounted for by the thermodynamic analysis of the ternary B-C-Si system.     

Low-temperature mechanochemical synthesis of nanosized silicon carbide

The methods of X-ray diffraction analysis, scanning electron microscopy, synchronous thermal analysis, and adsorption are used to study the mechanochemical synthesis of silicon carbide through the reaction Si + C → β-SiC. The reaction is found to take place in several stages. At the first stage, i.e., at activation doses below approximately 5 kJ/g, the powders of the components are independently ground to increase the specific surface area of the mixture to 145 m²/g, graphite is amorphized, and the sizes of the coherent-scattering regions of silicon drastically diminish. At the second stage (doses of 5–15 kJ/g), dense Si/C aggregates are formed and two fractions (coarse and fine) with different particle sizes arise in silicon crystallites. As the activation dose is enhanced, the amount of the fine fraction rises, while the sizes of coherent-scattering regions decrease to 2–3 nm. When samples are heated at 800°C, the fine fraction of silicon interacts with carbon to yield silicon carbide with crystallite sizes of 3–4 nm, whereas the coarse fraction of silicon recrystallizes. At the third stage, i.e., at doses of higher than 15 kJ/g, the mechanochemical synthesis of SiC occurs through the following scheme: fine fraction Si + C → amorphous SiC → crystallization of SiC.     

Ultrathin films of Ge on the Si(100)2 × 1 surface

The Ge/Si(100)2 × 1 interface was investigated by means of Auger electron spectroscopy, low‐energy electron diffraction, thermal desorption spectroscopy, and work function measurements, in the regime of a few monolayers. The results show that growth of Ge at room temperature forms a thermally stable amorphous interface without significant intermixing and interdiffusion into the substrate, for annealing up to ~1100 K. Therefore, the Ge‐Si interaction most likely takes place at the outmost silicon atomic plane. The charge transfer between Ge and Si seems to be negligible, indicating a rather covalent bonding. Regarding the Ge overlayer morphology, the growth mode depends on the substrate temperature during deposition, in accordance with the literature. Stronger annealing of the germanium covered substrate (>1100 K) causes desorption of not only Ge adatoms, but also SiGe and Ge₂ species. This is probably due to a thermal Ge‐Si interdiffusion. In that case, deeper silicon planes participate in the Ge‐Si interaction. Above 1200 K, a new Ge superstructure (4 × 4)R45^o was observed. Based on that symmetry, an atomic model is proposed, where Ge adatom pairs interact with free silicon dangling bonds.     

Development of core‐shell structure aided by SiC‐coated MWNT in ABS/LCP blend

Agglomeration is an issue of major concern for unmodified multi‐walled carbon nanotubes (MWNTs)‐aided polymeric composites. To overcome the above‐mentioned problem, multi‐walled carbon nanotubes (MWNTs) are modified by polycarbosilane (PCS)‐derived Silicone carbide (SiC). Acrylonitrile Butadiene Styrene (ABS)/Liquid Crystalline polymer (LCP)/MWCNT nanocomposites are prepared through melt blending in a twin screw extruder. X‐Ray Diffraction (XRD) studies authenticate the creation of ß‐SiC particles. Field Emission Scanning Electron Microscopy (FESEM) and Transmission Electron Microscopy (TEM) studies reveal the formation of core–shell morphology involving MWNT as the core and SiC‐coated MWNT as the shell. The degree of dispersion of MWNT is far better when it has been coated with SiC. As viewed from Thermo‐gravimetric analysis (TGA), the thermal stability is substantially increased in SiC‐aided nanocomposite in comparison to ABS/LCP/unmodified CNT blend. Glass transition temperature as well as mechanical properties are improved significantly (in the presence of SiC‐coated MWNT) as a result of homogeneous dispersion exhibited by MWNT. Copyright © 2009 John Wiley & Sons, Ltd.     

Nanostructured ZrO2 and Zr‐C‐N Coatings from Chemical Vapor Deposition of Metal‐Organic Precursors

Nanocrystalline zirconium carbonitride (Zr‐C‐N) and zirconium oxide (ZrO₂) films were deposited by chemical vapor deposition (CVD) of zirconium‐tetrakis‐diethylamide (Zr(NEt₂)₄) and ‐tert‐butyloxide (Zr(OBu^t)₄), respectively. The films were deposited on iron substrates and characterized by scanning electron microscopy (SEM), X‐ray diffraction (XRD) and X‐ray photoelectron spectroscopy (XPS). The Zr‐C‐N films show blue, golden brown or bronze colours, with colour stability depending upon the precursor composition (pure metal amide or mixed with Et₂NH). The deposition temperature showed no pronounced effect on the granular morphology of the Zr‐C‐N films. The XRD data of the films correspond to the formation of carbonitride phase whereas the XPS analyses revealed a strong surface oxidation and incorporation of oxygen in the film. The films deposited using a mixture of Zr(NEt₂)₄ and Et₂NH showed higher N content, better adhesion and scratch resistance when compared to films obtained from the CVD of pure Zr(NEt₂)₄. Subject to the precursor composition and deposition temperature (550‐750 °C), the microhardness values of Zr‐C‐N films were found to be in the range 2.11‐5.65 GPa. For ZrO₂ films, morphology and phase composition strongly depend on the deposition temperature. The CVD deposits obtained at 350 °C show tetragonal ZrO₂ to be the only crystalline phase. Upon increasing the deposition temperature to 450 °C, a mixture of tetragonal and monoclinic modifications was formed with morphology made up of interwoven elongated grains. At higher temperatures (550 and 650 °C), pure monoclinic phase was obtained with facetted grains and developed texture.     

Formation of alkane‐phosphonic acid self‐assembled monolayers on alumina: an in situ SPR study

The formation process of n‐alkane phosphonic acid CH₃ (CH₂)_n?1 PO(OH)₂ (n = 10,12,14,18) self‐assembled monolayers (SAMs), deposited from ethanol solutions on aluminum oxide, has been monitored in situ using surface plasmon resonance (SPR) spectroscopy. In addition, the two‐solvent approach is used to obtain both film thickness and refractive index of the fully formed adsorbed layers. A densely packed adsorbed layer is formed only for the longest molecules with n = 18. The chain length and solution concentration dependence of formation kinetics are studied, and the existence of two distinct kinetic steps is revealed. Fittings of the experimental results with various kinetic models are performed. Our analysis suggests that during the first kinetic step, a transition from a lying‐down to a standing‐up phase takes place, and the growth of this standing‐up phase is governed by second‐order kinetics. The second slow kinetic step is described by a modified first‐order Langmuir law. Copyright © 2009 John Wiley & Sons, Ltd.     

Behavior of HfB<Subscript>2</Subscript>-SiC (10, 15, and 20 vol %) ceramic materials in high-enthalpy air flows

HfB₂–SiC ceramic samples containing 10, 15, and 20 vol % silicon carbide were prepared by spark plasma sintering. The samples were characterized by X-ray powder diffraction, SEM, and other methods. Their densities and calculated porosities were determined. The behavior of the materials under heating by a subsonic dissociated air flow was studied on a VGU-4 high-frequency inductive plasmatron. The average surface temperatures of the 10 and 15 vol % SiC samples were shown to increase up to 2550–2675°C during heating, due to the generation of surface localities having temperatures of 2600–2700°C (the initial surface temperature was ~1700–1900°C) and the progressive growth of these regions in area. The overall time during which the average surface temperatures of these samples were higher than 2000°C, was about 31–32 min. For the 20 vol % SiC sample, heat removal (when the sample touched a water-cooled holder) was shown to influence the surface temperature and surface temperature distribution. The variation in gas-phase composition over the central area of the sample surface during an experiment was studied using emission spectroscopy. Explanations are proposed to the variation of boron and silicon concentrations in the course of exposure to high-enthalpy flows. The elemental and phase compositions were determined and the microstructures were studied on the surface and sections of samples after long-term (~40-min) exposure to high-enthalpy air flows.     

The high‐temperature tribological properties of Si‐DLC films

The tribological properties of Silicon‐containing diamond‐like‐carbon (Si‐DLC) films, deposited by magnetron sputtering Si target in methane/argon atmosphere, were studied in comparison with diamond‐like‐carbon (DLC) films. The DLC films disappeared because of the oxidation in the air at 500 °C, whereas the Si‐DLC films still remained, implying that the addition of Si improved significantly the thermal stability of DLC films. Retarded hydrogen release from DLC film at high temperature and silicon oxide on the surface might have contributed to lower friction coefficient of the Si‐DLC films both after annealing treatment and in situ high‐temperature environment. Copyright © 2012 John Wiley & Sons, Ltd.     

Compositional and structural characterization of alloyed carbide by 3D atom probe and high‐resolution TEM

During tempering of solute supersaturated ferrous martensite, the face‐centered cubic MC‐type carbides (M is alloy elements) such as VC and NbC phases usually co‐precipitate on crystal defects such as dislocation and take on plate‐like morphology. Over‐tempering makes the plate‐like shape change to spherical shape because of Ostwald coarsening. The coarsening process strongly correlates to the diffusion behaviors of the carbon and carbide‐forming elements, and consequently inhomogeneous compositional and structural distribution in the carbides is formed. Three‐dimensional atom probe and high‐resolution transmission electron microscopy have been proved useful methods to characterize the composition, morphology and nanostructure of the carbides that precipitate in a quench‐tempered micro‐alloyed steel. Depending on the actual affinity with C and the diffusion behavior, Si and Al are rejected from the alloy carbide, whereas Mn, V and Nb are inhomogeneously enriched in it. The morphology and structure change with the compositional redistribution. During the coarsening process of the pre‐existing plate‐like carbide, transition carbide that is semi‐coherent with ferritic matrix is formed because of the disparity in diffusion ratio of different solutes. A core–shell complex nanostructure is consequently formed in the coarsening carbide, and the core and shell are identified as V₈C₇ enriched in Mn, Mo and Mo₂C, respectively. Copyright © 2013 John Wiley & Sons, Ltd.