导电聚合物有序超薄膜的合成及其作为有机电致发光器件空穴注入层

采用修饰多层LB膜的方法制备了导电聚合物聚-3,4-乙烯二氧噻吩/二十烷酸(PEDOT:AA)复合层状有序膜, 构筑了一种导电聚合物镶嵌的多层有序膜结构. 将这种导电聚合物有序薄膜沉积于ITO电极表面, 将其作为有机电致发光二极管(OLED)的空穴注入层, 并研究了ITO/(PEDOT:AA)/MEH-PPV/Al器件的性能. 研究结果表明, 与采用聚3,4-乙烯二氧噻吩/聚苯乙烯磺酸(PEDOT:PSS)自组装膜和旋涂膜作为空穴注入层的ITO/(PEDOT:PSS)/MEH-PPV/Al器件相比, 器件的发光效率增加, 起亮电压降低. 我们认为这是由于PEDOT:AA薄膜提供了一种有序层状结构后, 减小了ITO与MEH-PPV间的接触势垒, 改善了空穴载流子注入效率. 进一步的研究表明, 由于PEDOT:AA多层膜间靠较弱的亲水、疏水作用结合, 这种导电多层有序膜的热稳定性与普通LB膜相似, 在较高温度下发生从层状有序态到无序态的变化, 这是导致OLED器件性能发生劣化的主要原因.     

原位聚合聚(3,4-乙烯二氧噻吩):π共轭聚电解质应用于聚合物太阳能电池空穴传输层

以带磺酸基团的π共轭聚电解质为模板,采用化学氧化还原方法制备了在水相中稳定分散的聚(3,4-乙烯二氧噻吩)(PEDOT)与聚电解质的复合物,并用作聚合物太阳能电池的空穴传输层.通过傅里叶变换红外光谱(FTIR)、紫外可见光谱(UV-Vis)、紫外光电子能谱(UPS)、原子力显微镜(AFM)、透射电子显微镜(TEM)和接触角等对聚(3,4-乙烯二氧噻吩):聚苯乙烯磺酸(PEDOT:PSS)和复合物薄膜的形貌和光电性能进行测试与表征.结果表明,相比于PEDOT:PSS,PEDOT:聚电解质复合物作为空穴传输层,具有合适的能级结构、高达95%的透光率(30 nm)、更疏水的表面形貌以及更高的空穴迁移率,有利于与活性层形成欧姆接触并提高空穴的注入和收集效率,进而提高器件的光伏性能.     

基于WOx/PEDOT:PSS复合空穴传输层的高效稳定平面异质结钙钛矿太阳电池

在基于钙钛矿/富勒烯平面异质结的钙钛矿太阳电池中,PEDOT:PSS是最常使用的空穴传输材料. 但PEDOT:PSS呈酸性,会腐蚀金属氧化物透明电极,使器件的电极界面稳定性欠佳. 本文将高功函的氧化钨（WO_x）插入到PEDOT:PSS和FTO之间,形成WO_x/PEDOT:PSS复合空穴传输层,这样既可以避免PEDOT:PSS与FTO直接接触,提高器件的稳定性,又可以进一步降低电极界面的接触势垒,从而提升器件的性能. 作者研究了复合传输层对透光率、钙钛矿形貌、钙钛矿结晶、光伏性能及器件稳定性的影响. 基于WO_x/PEDOT:PSS复合空穴传输层的电池效率可以达到12.96%,比单纯的PEDOT:PSS的电池效率(10.56%)提升了22.7%,同时器件的稳定性也得到大幅改善.     

基于双极性小分子的单层非掺杂红色荧光有机发光二极管(英文)

以双极性小分子4,9-二(4-(2,2-二苯乙烯基)苯基)萘并[2,3-c][1,2,5]噻二唑(BDPNTD)为发光层,制备得到了单层非掺杂红色荧光有机发光二极管.通过在阳极ITO与有机层BDPNTD之间插入1nm厚的WO3或MoO3薄膜,获得了单层有机发光二极管:起亮电压为2.4V,最大发光亮度为4950cd·m-2,发光波长为636nm,CIE坐标约为(0.65,0.35).这证明了作为修饰层的WO3或MoO3薄膜可以改进ITO/BDPNTD界面的空穴注入,进而在器件中实现空穴与电子的平衡.     

通过聚(3,4-乙烯二氧噻吩)-聚苯乙烯磺酸改性实现高性能蓝色钙钛矿发光二极管

金属卤化物钙钛矿材料因其独特的光电特性,在光电器件领域引起了相当大的关注和研究.特别是近年来,绿色和红色钙钛矿发光二极管(PeLEDs)研究取得了显著进展.然而,蓝色PeLEDs的发展落后于绿光和红光PeLEDs,效率也要低得多.其中一个主要原因是空穴传输层与蓝色钙钛矿材料的能级不匹配.在这项研究中,通过使用聚(4-苯乙烯磺酸钠)(PSS-Na)和溴化钾(KBr)改性空穴传输层材料聚(3,4-乙烯二氧噻吩)-聚苯乙烯磺酸(PEDOT:PSS),抑制PEDOT:PSS与钙钛矿材料界面之间的非辐射复合.并通过降低膜的粗糙度来提高钙钛矿膜的质量.结果表明,PSS-Na和KBr有效地提高了空穴传输能力,从而提高了PeLEDs器件的整体性能.通过PSS-Na改性PEDOT:PSS制备的蓝色PeLEDs具有低启亮电压(仅为3.3V)和高外量子效率(EQE)(达到4.12%).随着PEDOT:PSS中进一步加入KBr,蓝色PeLEDs最大EQE达到6.25%,启亮电压降至3 V.此外,与其他蓝光钙钛矿器件相比,该器件在不同电压下也表现出了良好的光谱稳定性.说明通过改性空穴传输层,可以提高钙钛矿发光器...     

以铱配合物为核、3,6-咔唑为枝的超支化电磷光聚合物的合成与发光性能

采用Suzuki缩聚反应制备了以铱配合物为核、3,6-咔唑为枝的超支化电磷光聚合物(PCzIrMppy1和PCzIrMppy3). 超支化聚合物PCzIrMppy3的光致发光量子效率为62%, HOMO能级为-5.22 eV, 接近阳极ITO/PEDOT∶PSS的能级(-5.20 eV), 表明其优异的空穴注入性能. 以PCzIrMppy3聚合物为发光层制备的绿光电磷光电致发光器件ITO/PEDOT∶PSS/Emissive layer/CsF/Al的最大电流效率为10.4 cd/A, 最大亮度为34758 cd/m². 此外, 器件的效率随电流密度的衰减较慢, 说明这种超支化结构可有效减少高电流密度下的浓度猝灭.     

基于激子和电致激基复合物双重发光的白光OLED

基于四苯基乙烯衍生物设计合成了两种蓝光材料TPE-4Br和TPE-3Br,并将其作为有机发光二极管(OLED)器件的发光层,研究发现其可与合适的邻层(空穴传输层/电子传输层)形成电致激基复合物。利用材料的本征激子发光及其电致激基复合物发光,可以得到理想的白光电致发光。将TPE-4Br和TPE-3Br掺杂于mCP中作为发光层,以TAPC和TmPyPB分别作为空穴传输层和电子传输层分别制备器件A和器件B,所得器件在操作电压为9 V时的色坐标分别为(0.32,0.33)和(0.31,0.34)。其中器件B的最大亮度和最大电流效率分别为364.66 cd?m~(-2)与0.79 cd?A~(-1)。     

一种具有稳定发射光谱的高效率白色有机电致发光器件

报道一种具有稳定发射光谱的新型白色有机电致发光器件. 选择DCJTB 作为红光染料将其掺入空穴传输材料NPB 中作为空穴传输层和第一发光层, 提供蓝光和红光; 选择AlQ 作为电子注入敏化剂, 将其掺入NPB 中作为第二发光层, 提供蓝光和绿光. DCJTB和AlQ 的掺杂浓度分别被优化为0.4%和1.4%, 第二发光层的厚度被优化为3 nm. 最终,得到了纯白色发射的有机电致发光器件; 该器件启亮电压仅3.1 V, 最大亮度高达32749 cd/m², 器件的最大电流效率为8.67 cd/A, 器件的最大功率效率为8.78 lm/W. 而且, 空穴型主体材料的选择导致该器件的色稳定性非常理想. 随着电流密度的提高, 该器件的色坐标始终稳定在(0.343, 0.342)到(0.328, 0.336)的范围内.     

基于N-对甲氧苯基咔唑-2-乙烯基-8-羟基喹啉锌的白色和黄色有机电致发光器件的性能

通过研究新型荧光染料N-对甲氧苯基咔唑-2-乙烯基-8-羟基喹啉锌(MoBCzHQZn)的电致发光(EL)特性, 发现MoBCzHQZn具有较强的发光特性和空穴传输特性, 利用此特性制备了非掺杂型的有机电致白光器件和掺杂型的有机电致黄光器件. 白光器件的结构为ITO/2T-NATA(20 nm)/MoBCzHQZn(25 nm)/NPBX(13 nm)/BCP(8nm)/Alq3(34 nm)/LiF(0.5 nm)/Al, 器件在15 V电压下实现了白光发射, 色坐标为(0.3719, 0.3275), 最大发光亮度为3414 cd·m-2, 在14 V 电压下的最大发光效率为1.69 cd·A-1、黄光器件的结构为ITO/2T-NATA(20 nm)/CBP:6%Ir(ppy)3:10%MoBCzHQZn(25 nm)/TPBi:6%Ir(ppy)3(47 nm)/LiF(0.5 nm)/Al, 器件在15 V电压下实现了黄绿光发射, 色坐标为(0.3590, 0.5787), 最大发光亮度为11073 cd·m-2, 在9 V电压下的最大发光效率为2.51 cd·A-1.     

改善有机光伏器件性能的新型缓冲层

通过热蒸发在ITO阳极和聚3,4-乙撑二氧噻吩:聚苯乙烯磺酸(PEDOT:PSS)层之间引入一层聚四氟乙烯（PTFE）缓冲层,研究聚四氟乙烯缓冲层对基于聚3-己基噻吩:6,6-苯基-C61丁酸甲酯(P3HT:PCBM)的有机光伏器件光电特性影响。与使用PEDOT:PSS作为缓冲层的器件相比,使用聚四氟乙烯缓冲层的有机光伏器件开路电压、短路电流和光电转换效率均有所提高。器件光电性能提高的原因是由于PTFE缓冲层大量带负电荷的氟离子在ITO/PTFE界面处形成偶极子层, 改善了内建电场,从而使得空穴电荷的收集更加有利。     

Hole injection/transport materials derived from Heck and sol-gel chemistry for application in solution-processed organic electronic devices

An organosilicate polymer, based on N,N'-diphenyl-N,N'-bis(4-((E)-2-(triethoxysilyl)vinyl)phenyl)biphenyl-4,4'-diamine (TEVS-TPD) with extended conjugation between the Si atom and the aromatic amine, was prepared under mild conditions via sequential Heck and sol-gel chemistry and used as an alternative to poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS), the most widely used planarizing hole injection/transport layer in solution-processed organic electronic devices. Spin-coating TEVS-TPD polymer solutions yield defect-free, uniform, thin films with excellent adhesion to the ITO electrode. Upon thermal cross-linking at 180 °C, the cross-linked polymer exhibits excellent solvent resistance and electrochemical stability. Solution-processed organic light emitting diode (OLED) devices using iridium-based triplet emitting layers and cross-linked TEVS-TPD films as a hole injection/transport layer show significantly improved performance including lower leakage current, lower turn-on voltage, higher luminance, and stability at high current density, as compared to the control device prepared with PEDOT:PSS.     

Cascade hole transport in efficient green phosphorescent light‐emitting devices achieved by layer‐by‐layer solution deposition using photocrosslinkable‐conjugated polymers containing oxetane side‐chain moieties

A hole‐injection/transport bilayer structure on an indium tin oxide (ITO) layer was fabricated using two photocrosslinkable polymers with different molecular energy levels. Two photoreactive polymers were synthesized using 2,7‐(or 3,6‐)‐dibromo‐9‐(6‐((3‐methyloxetan‐3‐yl)methoxy)hexyl)‐9H‐carbazole) and 2,4‐dimethyl‐N,N‐bis(4‐ (4,4,5,5‐tetramethyl‐1,3,2‐dioxaborolan‐2‐yl)phenyl)aniline via a Suzuki coupling reaction. When the oxetane groups were photopolymerized in the presence of a cationic photoinitiator, the photocured film showed good solvent resistance and compatibility with a poly(N‐vinylcarbazole) (PVK)‐based emitting layer. Without the use of a conventional hole injection layer (HIL) of poly(3,4‐ethylenedioxythiophene)/(polystyrenesulfonate) (PEDOT:PSS), the resulting green light‐emitting device bearing PVK: 5‐4‐tert‐butylphenyl‐1,3,4‐oxadiazole (PBD):Ir(Cz‐ppy)3 exhibited a maximum external quantum efficiency of 9.69%; this corresponds to a luminous efficiency of 29.57 cd/A for the device K‐4 configuration ITO/POx‐I/POx‐II/PVK:PBD:Ir(Cz‐ppy)3/triazole/Alq3/LiF/Al. These values are much higher than those of PLEDs using conventional PEDOT:PSS as a single HIL. The significant improvement in device efficiency is the result of suppression of the hole injection/transport properties through double‐layered photocrosslinked‐conjugated polymers. © 2011 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2012     

可溶液加工的蒽醌/芴类双极性荧光材料的合成及其光电性质

通过Suzuki反应合成得到了一种可溶液加工的蒽醌/芴类双极性荧光材料2-蒽醌基-9, 9'-二异辛基芴（FAA）,利用紫外吸收光谱和荧光发射光谱对其光物理性质进行了初步研究,并采用密度泛函理论计算方法分析了分子光物理性质的本质。通过单载流子器件的性能测试,证实了FAA具有较好的双极性传输特性。进而研究了该材料的电致发光性能,将其掺杂于主体材料1, 3-双（9-咔唑基）苯（mCP）中,利用旋涂法制备了结构为ITO（氧化铟锡）/PEDOT：PSS（聚3, 4-乙撑二氧噻吩：聚苯乙烯磺酸盐）/mCP：FAA/TmPyPb（1, 3, 5-三[（3-吡啶基）-3-苯基]苯）/LiF/Al的有机发光二极管。器件的启亮电压约为7.4 V,最大亮度为1719 cd·m^-2,最大电流效率和最大功率效率分别为1.66 cd·A^-1和0.56 lm·W^-1;同时,结合器件各功能层的能级结构图,探讨了其电致发光机制。     

Novel Hyperbranched Phthalocyanine as a Hole Injection Nanolayer in Organic Light‐Emitting Diodes

A novel organic hyperbranched copper phthalocyanine was synthesized for use as a hole injection nanolayer on ITO in organic light‐emitting diodes (OLEDs). This material is soluble in organic solvents which allows for processing under anhydrous conditions, unlike water based conventional polymer hole injection layer materials such as poly(3,4‐ethylenedioxythiophene)(PEDOT)/polystyrene sulfonate (PSS). The hyperbranched layer increased the luminous efficiency and brightness of single layer OLED devices, in addition to reducing current leakage which causes crosstalk in panel devices, compared to devices prepared from PEDOT/PSS. Therefore, this material is more suitable for OLED applications due to its processing and performance advantages over conventional commercial conducting polymer compositions.

     

Thermally crosslinkable hole‐transporting poly(fluorene‐co‐triphenylamine) for multilayer polymer light‐emitting diodes

This article reports the synthesis and characterization of a novel thermally crosslinkable hole‐transporting poly (fluorene‐co‐triphenylamine) (PFO‐TPA) by Suzuki coupling reaction, followed with its application in the fabrication of multilayer light‐emitting diodes by wet processes. The thermal, photophysical, and electrochemical properties of PFO‐TPA were investigated by differential scanning calorimeter, thermogravimetric analysis, optical spectroscopy, and cyclic voltammetry, respectively. Thermally crosslinked PFO‐TPA, through pendant styryl groups, demonstrates excellent thermal stability (T_d > 400 °C, T_g = 152 °C), solvent resistance, and film homogeneity. Its highest occupied molecular orbital level (?5.30 eV) lies between those of PEDOT:PSS (?5.0 ～ ?5.2 eV) and poly(9,9‐dioctylfluorene) (PFO: ?5.70 eV), forming a stepwise energy ladder to facilitate hole injection. Multilayer device with crosslinked PFO‐TPA as hole‐injection layer (HIL) (ITO/PEDOT:PSS/HIL/PFO/LiF/Ca/Al) was readily fabricated by successive spin‐coating processes, its maximum luminance efficiency (3.16 cd/A) were about six times higher than those without PFO‐TPA layer (0.50 cd/A). The result of hole‐only device also confirmed hole‐injection and hole‐transport abilities of crosslinked PFO‐TPA layer. Consequently, the device performance enhancement is attributed to more balanced charges injection in the presence of crosslinked PFO‐TPA layer. The thermally crosslinkable PFO‐TPA is a promising material for the fabrication of efficient multilayer polymer light‐emitting diodes because it is not only a hole‐transporting polymer but also thermally crosslinkable. © 2010 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2011     

Performance Improvement of Organic Light Emitting Diodes Using Poly(N-vinylcarbazole) (PVK) as a Blocking Layer

High efficiency organic light‐emitting‐devices (OLED) have been fabricated by incorporation of a polymeric layer as a controller of the unbalanced charge. In device configuration of ITO/PEDOT:PSS/PVK/Alq₃/LiF:Al, poly(N‐vinylcarbazole) (PVK) was selected as a block‐ing layer (BL) because it has a hole transporting property and a higher band gap, especially a lower LUMO level than the emitting layer (Alq₃) and a higher HOMO level than the hole injection layer (PEDOT: PSS). As a result, the optimal structure with this bl layer showed a peak efficiency of 6.89 cd/A and 2.30 lm/W compared to the device without the PVK layer of 1.08 cd/A, 0.27 lm/W. This result shows that the PVK layer could effec‐tively block the electrons from metal cathode and confine them in the emitting layer and accomplish the charge balance, which leads to enhanced hole‐electron balance for achieving high recombination efficiency.     

Improving Efficiency of Organic Photovoltaic Cells Using PEDOT:PSS and MWCNT Nanocomposites as a Hole Conducting Layer

In this study, polymeric nanocomposites of poly(3,4-ethylenedioxythiophene): poly(styrene sulfonate) (PEDOT:PSS) and functionalized multi-walled carbon nanotubes (MWCNTs) were spin coated on a pre-patterned ITO glass and used as a hole conducting layer in organic photovoltaic cells. The multi-layered ITO/MWCNT-PEDOT:PSS/CuPc/C60/Al devices were fabricated to investigate the current density-voltage characteristics and power conversion efficiency. The power conversion efficiency obtained from the device with a concentration of 1.0 wt% MWCNT in the PEDOT:PSS layer was increased twice as those adopted from device without MWCNT doping in the PEDOT:PSS layer and current density-voltage characteristics was also improved well with incorporation of MWCNTs.     

用CdSe/ZnS量子点提高体异质结有机太阳电池的效率

通过掺杂吸收光谱在可见光波段的量子点可提高聚合物对可见光的吸收,因此掺杂CdSe/ZnS核-壳结构量子点(CQDs)能提高聚(3-己基噻吩):[6,6]-苯基-C61-丁酸甲酯(P3HT:PCBM)体异质结太阳电池的能量转换效率.本文研究了CdSe/ZnS量子点在P3HT:PCBM中的不同掺杂比例及其表面配体对太阳电池光伏性能的影响,优化器件ITO(氧化铟锡)/PEDOT:PSS(聚(3,4-乙撑二氧噻吩:聚苯乙烯磺酸)/P3HT:PCBM:(CdSe/ZnS)/Al的能量转换效率达到了3.99%,与相同条件下没有掺杂量子点的参考器件ITO/PEDOT:PSS/P3HT:PCBM/Al相比,其能量转换效率提高了45.1%.