Facile preparation of BiVO4 thin film by screen-printing technique for its photocatalytic performance in the degradation of tetracycline under simulated sunlight irradiation

BiVO₄ films were prepared by a screen-printing technique on Corning glass substrate. The material employed to prepare the films was synthetized by the hydrothermal method. For comparative purposes, the BiVO₄ was synthesized via solid state reaction and deposited in film form by the same technique. From the X-ray diffraction structural characterization it has been stated that BiVO₄ films crystallized in the monoclinic structure. The characterization of BiVO₄ films was complemented with scanning electron microscopy, which revealed a morphology of irregular form and dendritic type depending on the starting material. The thickness of the BiVO₄ films were determined by profilometry. The film obtained from the hydrothermal method showed minor photoluminescence, i.e., the sample showed low recombination of electron–hole pairs. The highest photocatalytic activity in the degradation of tetracycline (TC) was presented for the BiVO₄ films obtained from hydrothermal powders under simulated sunlight irradiation; attributed mainly to the surface area value, smaller particle size and lower recombination of electron–hole pairs. Mineralization degree of TC by BiVO₄ films was determined by the total organic carbon analysis, reaching 50% after 24 h of irradiation. The main oxidizing species that was most influenced in the degradation of TC was the hydroxyl radical (OH^·).

     

(Ba<Subscript>0.93</Subscript>Nd<Subscript>0.07</Subscript>)TiO<Subscript>3</Subscript> thin films prepared by sol–gel method as a potential dielectric resonator antenna application

In this paper, we report the application of Neodymium (Nd) doped barium titanate thin films (Ba_1-xNd_x) TiO₃ with x = 0 and 0.07 as dielectric resonator antenna. The films were prepared using the sol–gel method and dip-coating technique. Barium acetate, titanium (IV) isopropoxide and neodymium (III) acetate hydrate were used as precursors while glacial acetic acid and acetylacetone were used as solvents. Si wafers were used as a substrate with dipping times varying from 10, 30, and 50 s. The 0.07 films were >800 nm thick and crystallized after being annealed at 800°C for 30 min. The films were tested as dielectric resonator antenna. It was found that, on the actual antenna circuit, the resonant frequency decreased as the (Ba_0.93Nd_0.07) TiO₃ films thickness increased (from 0.8379, to 5.4525 μm). All samples resonate in the range of 8.68–8.83 GHz with quasi omni-directional radiation patterns.     

Photocatalytic TiO2 Coatings: Effect of Substrate and Template

Summary. Transparent TiO₂ films with a high photodegradation activity towards an azo dye in aqueous solution were prepared by sol–gel processing. Films on soda–lime glass supports protected with a thin silica barrier layer exhibited better crystallization and monodisperse nanoparticles, higher absorption of light below 370 nm, and higher photocatalytic activity than those films deposited on bare glass supports proving the detrimental effect of interdiffused sodium ions on the development of the anatase nanostructure. The effect of substrate was more pronounced in thinner films (300 nm) than in thicker ones (1200 nm), which were achieved by adding a template (i.e. Pluronic F127) to the sol.     

Photocatalytic TiO2 Coatings: Effect of Substrate and Template

Transparent TiO₂ films with a high photodegradation activity towards an azo dye in aqueous solution were prepared by sol–gel processing. Films on soda–lime glass supports protected with a thin silica barrier layer exhibited better crystallization and monodisperse nanoparticles, higher absorption of light below 370 nm, and higher photocatalytic activity than those films deposited on bare glass supports proving the detrimental effect of interdiffused sodium ions on the development of the anatase nanostructure. The effect of substrate was more pronounced in thinner films (300 nm) than in thicker ones (1200 nm), which were achieved by adding a template (i.e. Pluronic F127) to the sol.     

The effect of different substrate temperatures on the structure and luminescence properties of Y2O3:Bi3+ thin films

Y₂O₃:Bi³⁺ phosphor thin films were prepared by pulsed laser deposition in the presence of oxygen (O₂) gas. The microstructure and photoluminescence (PL) of these films were found to be highly dependent on the substrate temperature. X-ray diffraction analysis showed that the Y₂O₃:Bi³⁺ films transformed from amorphous to cubic and monoclinic phases when the substrate temperature was increased up to 600 °C. At the higher substrate temperature of 600 °C, the cubic phase became dominant. The crystallinity of the thin films, therefore, increased with increasing substrate temperatures. Surface morphology results obtained by atomic force microscopy showed a decrease in the surface roughness with an increase in substrate temperature. The increase in the PL intensities was attributed to the crystallinity improvement and surface roughness decrease. The main PL emission peak position of the thin films prepared at substrate temperatures of 450 °C and 600 °C showed a shift to shorter wavelengths of 460 and 480 nm respectively, if compared to the main PL peak position of the powder at 495 nm. The shift was attributed to a different Bi³⁺ ion environment in the monoclinic and cubic phases.     

Investigation on the growth of CaCu3Ti4O12 thin film and the origins of its dielectric relaxations

Using the radio frequency magnetron sputtering, CaCu₃Ti₄O₁₂ (CCTO) thin films were deposited on platinized silicon substrates. The influence of annealing temperature on structures and morphologies of the thin films was investigated. The high annealing temperature increased the crystallinity of the films. Temperature dependence of the dielectric constant revealed an amazing different characteristic of the dielectric relaxation at ∼10 MHz, whose characteristic frequency abnormally increased with the decrease of the measuring temperature unlike the relaxations due to extrinsic origins. Meanwhile, the dielectric constant at high frequencies was close to the value derived from the first principle calculation. All these gave the evidences to ascribe this relaxation to the intrinsic mechanism.     

ITO films on glass substrate by sol–gel technique: synthesis,characterization and optical properties

The present paper extensively demonstrates synthesis, characterization and optical properties of semiconductor indium tin oxide (ITO) thin films on glass substrate using sol–gel technique for gas sensor applications. Turbidity, pH values, wettability and rheological properties of the prepared solutions were measured to determine solution characteristics by turbidimeter, pH meter, contact angle goniometer and rheometer machines prior to coating process. Thermal, structural, microstructural, mechanical and optical properties of the coatings were characterized by differential thermal analysis–thermogravimetry (DTA/TG), fourier transform infrarared, X-ray diffraction (XRD), scanning electron microscopy, scratch tester, refractometer and spectrophotometer. Four different solutions were prepared by changing solvent concentration. Turbidity, pH, contact angle and viscosity values of the solutions were convenient for coating process. Glass substrates were coated using the solutions of InCl₃, SnCl₂, methanol and glacial acetic acid. The obtained gel films were dried at 300 °C for 10 min and subsequently heat-treated at 500 °C for 10 min in air. The oxide thin films were annealed at 600 °C for 60 min in air. DTA/TG results revealed that endothermic and exothermic reactions are observed at temperature between 70 and 560 °C due to solvent removal, combustion of carbon based materials and oxidation of Sn and In. The spectrum of ITO precursor film annealed at 500–600 °C shows an absence of absorption bands corresponding to organics and hydroxyls. In₂Sn₂O_7−x phase was dominantly found as well as SnO₂ with low intensity from XRD patterns. It was found that surface morphologies of the film change from coating island with homogeneous structures to regular surface and thinner film structures with increasing solvent concentration. The films prepared from the solutions with 8 mL methanol have better adhesion strength to the glass substrate among other coatings. Refractive index, thickness and band gap of ITO thin films were determined to be 1.3171, 0.625 μm and 3.67, respectively.     

Characteristics of SnO2 thin films prepared by SILAR

SnO₂ thin films were deposited on glass substrates by using Successive Ionic Layer Adsorption and Reaction (SILAR) method at room temperature. The film thickness effect on characteristic parameters such as structural, morphological, optical and electrical properties of the films was studied. Also, the films were annealed in oxygen atmosphere (400 °C, 30 min) and characteristic parameters of the films were investigated. The X-ray Diffraction (XRD) and Scanning Electron Microscopy (SEM) studies showed that all the films exhibited polycrystalline nature with tetragonal structure and were covered well on glass substrates. After the investigation of the crystalline and surface properties of the films, it was found that they were improving with increasing film thickness. Optical band gap decreased from 3.90 eV to 3.54 eV and electrical conductivity changed between 0.015–0.815 (Ω-cm)⁻¹ as the film thickness increased from 215 to 490 nm. The refractive index (n), optical static and high frequency dielectric constants (ɛ_o, ɛ_∞) values were calculated by using the optical band gap values as a function of the film thickness.     

Preparation and characterization of In<Subscript>2</Subscript>S<Subscript>3</Subscript> semiconductor thin films using the sol–gel method

This study describes the In₂S₃ semiconductor thin film coating on glass substrate by sol–gel method. The In₂S₃ thin film samples were prepared and examined by the X-ray diffraction (XRD), the UV–visible optical absorption and transmission study, and the Scanning Electron Microscope (SEM) image analyses. The XRD analysis results show that the In₂S₃ semiconductor thin films prepared by sol–gel method is formed at T~360–520 °C temperature interval. Band gap energy and optical absorption spectrum analysis of the In₂S₃ thin films reveal that Eg~2.51 eV for the In₂S₃ thin films. According to the EDX result the film was In-rich with the In/S = 1.42 ratio. The thickness of prepared In₂S₃ layer is about 400 nm.     

Silica-containing polyetherimide hybrid films based on methyltriethoxysilane as precursor of inorganic network

Polyetherimide hybrid films containing 5–40% silica were prepared through a sol-gel process and thermal imidization by using methyltriethoxysilane as precursor of the inorganic network and a poly(amic acid) resulting from polycondensation reaction of 2,2-bis[4-(4-aminophenoxy)phenyl]propane with 2,2-bis[(3,4-dicarboxyphenoxy)phenyl]propane dianhydride. The properties of these films, morphology, water vapor sorption capacity, free surface energy, mechanical, thermal and electrical characteristics, were studied. The films exhibited good thermal stability, having an initial decomposition temperature above 470 °C and glass transition temperature in the range of 187–200 °C. They showed low dielectric constant and low dielectric loss in a large frequency field. Gas permeation tests using small molecules (He, N₂, O₂ and CO₂) at 6 bar and 30 °C indicated that the hybrid films containing higher silica content showed higher permeability for all the tested gases.     

Preparation of nitrogen doped zinc oxide nanoparticles and thin films by colloidal route and low temperature nitridation process

Nitrogen doped zinc oxide (ZnO) nanoparticles have been synthesized using a colloidal route and low temperature nitridation process. Based on these results, 200 nm thick transparent ZnO thin films have been prepared by dip-coating on SiO₂ substrate from a ZnO colloidal solution. Zinc peroxide (ZnO₂) thin film was then obtained after the chemical conversion of a ZnO colloidal thin film by H₂O₂ solution. Finally, a nitrogen doped ZnO nanocrystalline thin film (ZnO:N) was obtained by ammonolysis at 250 °C. All the films have been characterized by scanning electron microscopy, X-ray diffraction, X-Ray photoelectron spectroscopy and UV–Visible transmittance spectroscopy.     

Visible light photocatalytic activity of BiVO4 particles with different morphologies

Bismuth vanadate (BiVO₄) particles with different morphologies were synthesized by a one-step hydrothermal process and their optical and photocatalytic properties were investigated. Their crystal structure and microstructures were characterized using X-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM). XRD patterns demonstrate that the as-prepared samples are monoclinic cell. FESEM shows that BiVO₄ crystals can be fabricated in different morphologies by simply manipulating the reaction parameters of hydrothermal process. The UV–visible diffuse reflectance spectra (UV–vis DRS) reveal that the band gaps of BiVO₄ photocatalysts are about 2.07–2.21 eV. The as-prepared BiVO₄ photocatalysts exhibit higher photocatalytic activities in the degradation of rhodamine B (Rh B) under visible light irradiation (λ > 420 nm) compared with traditional N-doped TiO₂ (N-TiO₂). Furthermore, wheat like BiVO₄ sample reveals the highest photocatalytic activity. Up to 100% Rh B is decolorized after visible light irradiation for 180 min. The reason for the difference in the photocatalytic activities for BiVO₄ samples obtained at different conditions were systematically studied based on their shape, size and the variation of local structure.     

The synthesis and properties of CaCu3Ti4O12 thin films

The CaCu₃Ti₄O₁₂ (CCTO) thin films were synthesized via a metal‐organic solution containing stoichiometric amounts of the metal cations at 700 °C for 1 h. The stable metal‐organic solution was prepared by dissolving calcium nitrate, copper nitrate, and tetrabuty titanate in grain alcohol. The phases, microstructures, and electric properties of CCTO thin films were characterized by X‐ray diffraction, scanning electron microscopy, atomic force microscope, and electric measurements. The results show that the CCTO thin films have homogeneous microstructure, smooth surface, low leakage current, and high values of dielectric constant. The low leakage current can be attributed to the small surface roughness. The high value of dielectric constant can be attributed to the internal barrier layer capacitor mechanism and metal‐insulator‐semiconductor junction of CCTO thin films. Copyright © 2013 John Wiley & Sons, Ltd.     

Nanocomposite of CeVO4/BiVO4 Loaded on Reduced Graphene Oxide for the Photocatalytic Degradation of Methyl Orange

A facile procedure, involving one-pot synthesis of CeVO₄/BiVO₄ and in-situ reduction of graphene oxide (GO), has been used to prepare CeVO₄/BiVO₄/rGO nanocomposites. Different ratios of the CeVO₄–BiVO₄ were prepared to afford composites represented as CBVG3, CBVG5, and CBVG7. The ternary nanocomposite materials were characterized by using powder X-ray diffractometer (XRD), scanning electron microscopy (SEM), transmission electron microscope (TEM), photoluminescence and UV–vis spectroscopic techniques. Photocatalytic efficiency of the as-prepared ternary nanocomposites was investigated through the photo degradation of methyl orange under a visible light irradiation at 470 nm. The photocatalytic performance was enhanced by loading the CeVO₄/BiVO₄ nanoparticles on reduced graphene oxide (rGO), given MO degradation rate of 57, 65, 80, and 90% for BVG, CBVG3, CBVG5, and CBVG7, respectively after exposure to visible light for 120 min. Effects of experimental process parameters including initial dye concentration, catalysts loading and effect of different modification regimes were studied using CBVG7, which exhibited the highest efficiency. The improvement in the photocatalytic efficiency may be attributed to increased surface area of the nanocomposites, enhanced light absorption capacity and improved charge separation. The study showed a one-pot synthesis route to prepare promising CeVO₄/BiVO₄/GO nanocomposites for the photo-enhanced degradation of dye contaminants.

     

Dielectric behavior of some aromatic polyimide films

Aromatic polyimides were prepared by polycondensation reaction of two aromatic diamines, such as 4,4′-diaminodiphenylmethane (DDM) and 3,3′-dimethyl-4,4′-diaminodiphenylmethane (MDDM), with aromatic dianhydrides, such as 4,4′-isopropylidene-diphenoxy-bis(phthalic anhydride) (6HDA), benzophenonetetracarboxylic dianhydride (BTDA) and hexafluoroisopropylidene-bis (phthalic anhydride) (6FDA). These polymers are soluble in polar aprotic solvents and can be cast into thin films from such solutions. The polyimides show high thermal stability, with decomposition temperature being above 430 °C in air, and high glass transition temperature being in the range of 200–287 °C. The free standing films, having the thickness of tens of micrometers, exhibited good mechanical and electrical insulating properties. The dielectric constant, molecular mobility and AC conductivity of thin films prepared from these polymers were investigated in detailed. The study of their dielectric behavior evidenced low dielectric constant values, in the range of 2.88–3.48 at 1 Hz at room temperature, and three relaxation processes (γ,β₁ and β₂) were observed at sub-glass temperatures for polyimides based on 6HDA and 6FDA and only two (γ and β) relaxations were detected for polyimides based on BTDA. The cooperativity of the molecular motions associated with the relaxation processes was discussed.     

Optical and electrical properties of barium titanate-hydroxyapatite composite screen-printed thick films

In this paper we will study the effect of the presence of hydroxyapatite (HA—Ca₁₀(PO₄)₆(OH)₂) on the dielectric permittivity and losses of the barium titanate (BTO—BaTiO₃) thick films. These films were prepared in two layers geometry using the screen printing technique on Al₂O₃ substrates. Mechanical alloying has been used successfully to produce nanocrystalline powders of hydroxyapatite (HA) used in the films. We also look for the effect of the grain size of the BTO and HA on the final properties of the film. The samples were studied using X-ray diffraction, scanning electron microscopy (SEM), Raman and infrared spectroscopies, dielectric permittivity and losses measurements. The study of the dielectric permittivity and losses was done in the radio-frequency range (100 Hz–10 MHz). The role played by the firing process in the film preparation and the crystallite size of HA and BTO on the dielectric constant and structural properties of the films are discussed.     

AC conductivity and dielectric properties of 2-(2,3-dihydro-1,5-dimethyl-3-oxo-2-phenyl-1H-pyrazol-4-ylimino)-2-(4-nitrophenyl)acetonitrile thin films

The dark AC conductivity and dielectric properties of thermally evaporated 2-(2,3-dihydro-1,5-dimethyl-3-oxo-2-phenyl-1H-pyrazol-4-ylimino)-2-(4-nitrophenyl)acetonitrile (DOPNA) thin films in sandwich structure employing symmetrical gold ohmic contacts have been investigated as function of temperature (303–443 K) and frequency (100 Hz–5 MHz). The AC conductivity, σ_AC(ω), is found to obey Jonscher’s universal power law, σ_AC(ω)=Aω^s (ω is the angular frequency). The AC conductivity of DOPNA thin films has been analyzed with reference to various theoretical models. The correlated barrier hopping is found to be the dominant conduction mechanism for charge carrier transport; the maximum barrier height, hopping length and the density of localized states are estimated. The temperature dependence of the AC conductivity shows Arrhenius type with two thermal activation energies. The activation energies are determined as a function of frequency. The behavior of the real and imaginary parts of the dielectric constant as a function of both temperature and frequency is discussed.     

Influence of YSZ buffer layer on the electric properties of compositionally graded (Ba,Sr)TiO<Subscript>3</Subscript> thin film

Compositionally graded Ba_1−x Sr _x TiO₃ (BST) (0 ≤ x ≤ 0.4) thin films were fabricated on Pt/Ti/SiO₂/Si and YSZ/Pt/Ti/SiO₂/Si substrates by a modified sol–gel technique. The YSZ buffer layer was prepared by RF magnetron sputtering. The microstructure of the graded BST films was investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM). The results showed that all the films have uniform and crack-free surface with a perovskite structure. The graded BST film with an YSZ buffer layer has larger dielectric constant and lower dielectric loss. The leakage current density of the graded BST film with an YSZ buffer layer lowers two orders than the film without buffer layer. The improved electric properties of the graded films with an YSZ buffer layer was attributed to the YSZ buffer layer act as an excellent seeding layer to enhance the graded BST film growth.     

Excellent photocatalytic reduction of nitroarenes to aminoarenes by BiVO4 nanoparticles grafted on reduced graphene oxide (rGO/BiVO4)

A novel heterogeneous composite material based on reduced graphene oxide (rGO) and bismuth vanadate (BiVO₄) was prepared and characterized by various techniques such as powder XRD, HRTEM, EADX, UV–Vis‐DRS, FT‐IR, Raman, BET and XPS analyses. The characterization results reveal that the rGO well decorated by BiVO₄. The electrochemical impedance spectroscopy (EIS) shows the increasing of charge transfer of rGO/BiVO₄ in presence of light irradiation. In this research, the pure BiVO₄ and rGO/BiVO₄ composite have been explored for photocatalytic reduction of nitroarenes. Among the prepared nanocomposites, rGO loaded with 10% BiVO₄ catalyst (noted as rGO/BiVO₄–10%) shows the best performance for the photo‐reduction of various nitroaromatic molecules to their corresponding amine compounds under visible‐light irradiation at room temperature. The catalyst exhibited in particular excellent photocatalytic activity for the conversion of 1,4‐dinitrobenzene to 4‐nitroanilline (100% conversion) in 20 min, 4‐chloronitrobenzene to 4‐chloroaniline and 2‐nitrophenol to 2‐aminophenol (100% conversion) in only 30 min. In addition, the conversion of 4‐bromonitrobenzene, 4‐iodonitrobenzene to their corresponding amine compounds (100% conversion) was achieved in 60 min. The catalyst was recovered for several times and reused without decreasing of its efficiency.     

Microstructure,dielectric properties and optical band gap control on the photoluminescence behavior of Ba[Zr<Subscript>0.25</Subscript>Ti<Subscript>0.75</Subscript>]O<Subscript>3</Subscript> thin films

Ba[Zr_0.25Ti_0.75]O₃ (BZT) thin films were synthesized by the complex polymerization method and heat treated at 400 °C for different times and at 700 °C for 2 h. These thin films were analyzed by X-ray diffraction (XRD), Fourier-transform infrared (FT-IR) spectroscopy, field emission gun-scanning electron microscopy (FEG-SEM) and atomic force microscopy (AFM), Ultraviolet–visible (UV–vis) absorption spectroscopy, electrical and photoluminescence (PL) measurements. FEG-SEM and AFM micrographs showed that the microstructure and thickness of BZT thin films can be influenced by the processing times. Dielectric constant and dielectric loss of BZT thin films heat treated at 700 °C were approximately 148 and 0.08 at 1 MHz, respectively. UV–vis absorption spectra suggested the presence of intermediary energy levels (shallow and deep holes) within the band gap of BZT thin films. PL behavior was explained through the optical band gap values associated to the visible light emission components.