Miniaturized electrochemical sensors and their point-of-care applications

Most of the current analytical methods depend largely on laboratory-based analytical techniques that require expensive and bullky equipment,potentially incur costly testing,and involve lengthy detection processes.With increasing requirements for point-of-care testing(POCT),more attention has been paid to miniaturized analytical devices.Miniaturized electrochemical(MEC)sensors,including different material-based MEC sensors(such as DNA-,paper-,and screen electrode-based),have been in strong demand in analytical science due to their easy operation,portability,high sensitivity,as well as their short analysis time.They have been applied for the detection of trace amounts of target through measuring changes in electrochemical signal,such as current,voltage,potential,or impedance,due to the oxidation/reduction of chemical/biological molecules with the help of electrodes and electrochemical units.MEC sensors present great potential for the detection of targets including small organic molecules,metal ions,and biomolecules.In recent years,MEC sensors have been broadly applied to POCT in various fields,including health care,food safety,and environmental monitoring,owing to the excellent advantages of electrochemical(EC)technologies.This review summarized the state-of-the-art advancements on various types of MEC sensors and their applications in POCT.Furthermore,the future perspectives,opportunities,and challenges in this field are also discussed.     

Machine Learning towards Screening Solid-state Lithium Ion Conductors

Machine learning is an emerging method to discover new materials with specific characteristics.An unsupervised machine learning research is highlighted to discover new potential lithium ionic conductors by screening and clustering lithium compounds,providing inspirations for the development of solid-state electrolytes and practical batteries.     

Surface defect-rich ceria quantum dots anchored on sulfur-doped carbon nitride nanotubes with enhanced charge separation for solar hydrogen production

Designing defect-engineered semiconductor heterojunctions can effectively promote the charge carrier separation.Herein,novel ceria(CeO2) quantum dots(QDs) decorated sulfur-doped carbon nitride nanotubes(SCN NTs) were synthesized via a thermal polycondensation coupled in situ depositionprecipitation method without use of template or surfactant.The structure and morphology studies indicate that ultrafine CeO2 QDs are well distributed inside and outside of SCN NTs offering highly dispersed active sites and a large contact interface between two components.This leads to the promoted formation of rich Ce³⁺ ion and oxygen vacancies as confirmed by XPS.The photocatalytic performance can be facilely modulated by the content of CeO2 QDs introduced in SCN matrix while bare CeO2 does not show activity of hydrogen production.The optimal catalyst with 10% of CeO2 loading yields a hydrogen evolution rate of 2923.8 μmol h-1 g-1 under visible light,remarkably higher than that of bare SCN and their physical mixtures.Further studies reveal that the abundant surface defects and the created 0 D/1 D junctions play a critical role in improving the separation and transfer of charge carriers,leading to superior solar hydrogen production and good stability.     

Superfast and solvent-free core-shell assembly of sulfur/carbon active particles by hail-inspired nanostorm technology for high-energy-density Li-S batteries

The demand on low-carbon emission fabrication technologies for energy storage materials is increasing dramatically with the global interest on carbon neutrality.As a promising active material for metal-sulfur batteries,sulfur is of great interest due to its high-energy-density and abundance.However,there is a lack of industry-friendly and low-carbon fabrication strategies for high-performance sulfur-based active particles,which,however,is in critical need by their practical success.Herein,based on a hail-inspired sulfur nano-storm(HSN)technology developed in our lab,we report an energy-saving,solvent-free strategy for producing core-shell sulfur/carbon electrode particles(CNT@AC-S)in minutes.The fabrication of the CNT@AC-S electrode particles only involves low-cost sulfur blocks,commercial carbon nanotubes(CNT)and activated carbon(AC)micro-particles with high specific surface area.Based on the above core-shell CNT@AC-S particles,sulfur cathode with a high sulfur-loading of 9.2 mg cm^-2 delivers a stable area capacity of 6.6 mAh cm^-2 over 100 cycles.Furthermore,even for sulfur cathode with a super-high sulfur content(72 wt%over the whole electrode),it still delivers a high area capacity of 9 mAh cm^-2 over50 cycles in a quasi-lean electrolyte condition.In a nutshell,this study brings a green and industryfriendly fabrication strategy for cost-effective production of rationally designed S-rich electrode particles.     

Unraveling the stabilization mechanism of solid electrolyte interface on ZnSe by rGO in sodium ion battery

Transition metal selenides have been widely studied as anode materials of sodium ion batteries(SIBs),however,the investigation of solid-electrolyte-interface(SEI)on these materials,which is critical to the electrochemical performance of SIBs,remains at its infancy.Here in this paper,ZnSe@C nanoparticles were prepared from ZIF-8 and the SEI layers on these electrodes with and without reduced graphene oxide(rGO)layers were examined in details by X-ray photoelectron spectroscopies at varied charged/discharged states.It is observed that fast and complicated electrolyte decomposition reactions on ZnSe@C leads to quite thick SEI film and intercalation of solvated sodium ions through such thick SEI film results in slow ion diffusion kinetics and unstable electrode structure.However,the presence of rGO could efficiently suppress the decomposition of electrolyte,thus thin and stable SEI film was formed.ZnSe@C electrodes wrapped by rGO demonstrates enhanced interfacial charge transfer kinetics and high electrochemical performance,a capacity retention of 96.4%,after 1000 cycles at 5 A/g.This study might offer a simple avenue for the designing high performance anode materials through manipulation of SEI film.     

CXN天然沸石的研究2: 吸附性质

采用N~2,NH~3,CO~2,乙烯,丙烯,水,甲醇,乙醇,丙醇等作为吸附剂,研究了由我国CXN天然沸石改性制得的H-STI和Na-STI沸石的吸附性质,H-STI和Na-STI沸石的BET表面积及微孔孔体积约为420m^2/g和0.20m^3/g。根据NH~3和CO~2在H-STI沸石上的吸附等温线计算得到它们的吸附热分别为44.8和26.5kJ/mol。乙烯,丙烯,甲醇,乙醇,丙醇等在Na-STI沸石上的吸附等温线表明该沸石对有机分子的吸附具有链长选择性。在低分压下水相对于甲醇的吸附量表明沸石具有一定的疏水性质。     

常温常湿条件下Au/MeO~x催化剂上CO氧化性能

利用共沉淀法制备了Au/MeO~x催化剂(Me=Al,Co,Cr,Cu,Fe,Mn,Ni,Zn)。在常温常湿条件下,考察了不同氧化物负载的金基催化剂的CO氧化性能。结果表明,氧化物种类对催化剂的活性和稳定性均有较大的影响。Cu,Mn,Cr等氧化物负载的金基催化剂的活性较差,而Zn,Fe,Co,Ni,Al等金属氧化物负载的金基催化剂可将CO完全氧化,又具有一定的稳定性,在相同反应条件下,CO完全转化时的稳定性顺序为Au/ZnO>Au/α-Fe~2O~3>Au/Co~3O~4>Au/γ-Al~2O~3≈Au/NiO。还发现水对Au/MnO~x催化剂的活性和稳定性有负作用,而对180℃焙烧制备的Au/ZnO-180催化剂的活性和稳定性均有明显的湿度增强作用。     

Boost oxygen reduction reaction performance by tuning the active sites in Fe-N-P-C catalysts

Cost-effective atomically dispersed Fe-N-P-C complex catalysts are promising to catalyze the oxygen reduction reaction(ORR)and replace Pt catalysts in fuel cells and metal-air batteries.However,it remains a challenge to increase the number of atomically dispersed active sites on these catalysts.Here we report a highly efficient impregnation-pyrolysis method to prepare effective ORR electrocatalysts with large amount of atomically dispersed Fe active sites from biomass.Two types of active catalyst centers were identified,namely atomically dispersed Fe sites and Fe_xP particles.The ORR rate of the atomically dispersed Fe sites is three orders of magnitude higher than it of Fe_xP particles.A linear correlation between the amount of the atomically dispersed Fe and the ORR activity was obtained,revealing the major contribution of the atomically dispersed Fe to the ORR activity.The number of atomically dispersed Fe increases as the Fe loading increased and reaching the maximum at 1.86 wt%Fe,resulting in the maximum ORR rate.Optimized Fe-N-P-C complex catalyst was used as the cathode catalyst in a homemade Zn-air battery and good performance of an energy density of 771 Wh kgZn^-1,a power density of 92.9 m W cm^-2 at 137 m A cm^-2 and an excellent durability were exhibited.     

Regulation of carbon distribution to construct high-sulfur-content cathode in lithium-sulfur batteries

Lithium-sulfur(Li-S)battery is regarded as one of the most promising next-generation energy storage systems due to the ultra-high theoretical energy density of 2600 Wh kg^-1.To address the insulation nature of sulfur,nanocarbon composition is essential to afford acceptable cycling capacity but inevitably sacrifices the actual energy density under working conditions.Therefore,rational structural design of the carbon/sulfur composite cathode is of great significance to realize satisfactory electrochemical performances with limited carbon content.Herein,the cathode carbon distribution is rationally regulated to construct high-sulfur-content and high-performance Li-S batteries.Concretely,a double-layer carbon(DLC)cathode is prepared by fabricating a surface carbon layer on the carbon/sulfur composite.The surface carbon layer not only provides more electrochemically active surfaces,but also blocks the polysulfide shuttle.Consequently,the DLC configuration with an increased sulfur content by nearly 10 wt%renders an initial areal capacity of 3.40 mAh cm^-2 and capacity retention of 83.8%during 50 cycles,which is about two times than that of the low-sulfur-content cathode.The strategy of carbon distribution regulation affords an effective pathway to construct advanced high-sulfur-content cathodes for practical high-energy-density Li-S batteries.     

Confined Ni-In intermetallic alloy nanocatalyst with excellent coking resistance for methane dry reforming

Carbon dioxide and methane are two main greenhouse gases which are contributed to serious global warming.Fortunately,dry reforming of methane(DRM),a very important reaction developed decades ago,can convert these two major greenhouse gases into value-added syngas or hydrogen.The main problem retarding its industrialization is the seriously coking formation upon the nickel-based catalysts.Herein,a series of confined indium-nickel(In-Ni)intermetallic alloy nanocatalysts(In_xNi@SiO₂)have been prepared and displayed superior coking resistance for DRM reaction.The sample containing 0.5 wt.%of In loading(In_0.5Ni@SiO₂)shows the best balance of carbon deposition resistance and DRM reactivity even after 430 h long term stability test.The boosted carbon resistance can be ascribed to the confinement of core–shell structure and to the transfer of electrons from Indium to Nickel in In-Ni intermetallic alloys due to the smaller electronegativity of In.Both the silica shell and the increase of electron cloud density on metallic Ni can weaken the ability of Ni to activate C–H bond and decrease the deep cracking process of methane.The reaction over the confined InNi intermetallic alloy nanocatalyst was conformed to the Langmuir-Hinshelwood(L-H)mechanism revealed by in situ diffuse reflectance infrared Fourier transform spectroscopy(in-situ DRIFTS).This work provides a guidance to design high performance coking resistance catalysts for methane dry reforming to efficiently utilize these two main greenhouse gases.     

砷化镓半导体表面自然氧化层的X射线光电子能谱分析

用X射线光电子能谱(XPS)，测量了Ga3d和As3d光电子峰的结合能值，指认了砷化镓(GaAs)晶片表面的氧化物组成，计算了表面氧化层的厚度，定量分析了表面的化学组成；比较了几种不同的砷化镓晶片表面的差异。结果表明：砷化镓表面的自然氧化层主要由Ga2O3、As2O5、As2O3和单质As组成，表面镓砷比明显偏离理想的化学计量比，而且，氧化层的厚度随镓砷比的增大而增加；溶液处理后，砷化镓表面得到了改善。讨论了可能的机理。     

Synchrotron-induced photoemission of GaAs electrodes after electrochemical treatment in aqueous electrolytes

Electrochemically-induced oxidation and reduction reactions of UHV-cleaved GaAs(110) surfaces have been studied after emersion under potential control using high resolution synchrotron-induced photoelectron spectroscopy. High quality spectra of the As and Ga core 3d lines and the valence band region have been obtained. The spectra of the anodic oxide show strong emission of bulk-like Ga(2)O(3) and some As(2)O(3) with the admixture of suboxides and hydroxides. Ga(2)O(3) and As(2)O(3) are cathodically reduced leaving the GaAs surface covered mostly with elemental As, some As-H and remnants of Ga-suboxides and -hydroxides.     

铈钼氧化物表面氧性质和催化性能

在甲苯选择性氧化制苯甲醛反应中,Mo基氧化物是一类重要的催化剂[1]．通常的认识是反应物与催化剂表面晶格氧作用,并通过催化剂本身的还原和氧化的循环过程促使反应进行。生成产物．因此,催化剂表面不同氧物种的热脱附性能应与催化反应性能密切相关．对于Ce-Mo氧化物的TPD-MS研究,尚未见文献报导．为了能获得该方面的信息,本文应用程序升温脱附-质谱检测（TP-MS）联用技术,对Ce-Mo氧化物样品进行了表面氧TPD谱测定和动力学参量等计算,并试图与其催化性能进行关联．1实验部分1．1样品的制备和表征分别将一定质量的硝酸铈铵和仲…     

Initial oxidation of a Rh(110) surface using atomic or molecular oxygen and reduction of the surface oxide by hydrogen

The formation conditions, morphology, and reactivity of thin oxide films, grown on a Rh(110) surface in the ambient of atomic or molecular oxygen, have been studied by means of laterally resolved core level spectroscopy, scanning tunneling microscopy and low energy electron diffraction. Exposures of Rh(110) to atomic oxygen lead to subsurface incorporation of oxygen even at room temperature and facile formation of an ordered, laterally uniform surface oxide at approximately 520 K, with a quasi-hexagonal structure and stoichiometry close to that of RhO(2). In the intermediate oxidation stages, the surface oxide coexists with areas of high coverage adsorption phases. After a long induction period, the reduction of the Rh oxide film with H(2) is very rapid and independent of the coexisting adsorption phases. The growth of the oxide film by exposure of a Rh(110) surface to molecular oxygen requires higher pressures and temperatures. The important role of the O(2) dissociation step in the oxidation process is reflected by the complex morphology of the oxide films grown in O(2) ambient, consisting of microscopic patches of different Rh and oxygen atomic density.     

Soft X-ray characterization of Zn(1-x)Sn(x)O(y) electronic structure for thin film photovoltaics

Zinc tin oxide (Zn(1-x)Sn(x)O(y)) has been proposed as an alternative buffer layer material to the toxic, and light narrow-bandgap CdS layer in CuIn(1-x),Ga(x)Se(2) thin film solar cell modules. In this present study, synchrotron-based soft X-ray absorption and emission spectroscopies have been employed to probe the densities of states of intrinsic ZnO, Zn(1-x)Sn(x)O(y) and SnO(x) thin films grown by atomic layer deposition. A distinct variation in the bandgap is observed with increasing Sn concentration, which has been confirmed independently by combined ellipsometry-reflectometry measurements. These data correlate directly to the open circuit potentials of corresponding solar cells, indicating that the buffer layer composition is associated with a modification of the band discontinuity at the CIGS interface. Resonantly excited emission spectra, which express the admixture of unoccupied O 2p with Zn 3d, 4s, and 4p states, reveal a strong suppression in the hybridization between the O 2p conduction band and the Zn 3d valence band with increasing Sn concentration.     

Chemically resolved scanning tunneling microscopy imaging of Al on p-type Al0.1Ga0.9As(001)-c(2x8)(2x4)

The ability to chemically differentiate individual subsurface Al and Ga atoms, when imaging the Al0.1Ga0.9As(001)-c(2x8)(2x4) surface with scanning tunneling microscopy (STM), has been observed for the first time. In filled-state STM images first layer As atoms bonded to second layer Al atoms appear brighter than those bonded to second layer Ga atoms. This effect is only observed experimentally with p-type Al0.1Ga0.9As grown on p-type GaAs substrates and has been computationally modeled with density functional theory (DFT) calculations. It is hypothesized that chemical specificity is not observed on n-type material because the extra surface charge given to first layer As atoms by second layer Al atoms adds negligibly to the filled-state density of the surface, thus preventing the visualization of chemical specificity with filled-state STM imaging. The ability to distinguish whether first layer As atoms are bonded to second layer Ga and/or Al atoms in STM images shows that small differences in bond ionicity affect the local electronic structure of the material.     

Adsorption of phenylphosphonic acid on GaAs (100) surfaces

The adsorption of phenylphosphonic acid (PPA) on GaAs (100) surfaces from solutions in acetonitrile/water mixtures was studied using Fourier transform infrared spectroscopy in attenuated total reflection in multiple internal reflections (ATR/MIR), X-ray photoelectron spectroscopy (XPS), high-resolution electron energy loss spectroscopy (HREELS), and atomic force microscopy (AFM). ATR/MIR in situ showed that the accumulation of PPA molecules near the GaAs surface increased with the water concentration in the solution. For water contents lower than 4%, ATR/MIR and XPS results are consistent with the formation of a low-density monolayer. A mechanism is proposed for H2O percentages lower than 4% involving the creation of interfacial bonds through a Br?nsted acid-base reaction, which involves the surface hydroxyl groups most probably bound to Ga. It was found that the morphology of the final layer depended strongly on the water concentration in the adsorbing solution. For water concentrations equal to or higher than 5%, the amount of adsorbed molecules drastically increased and was accompanied by modifications in the infrared spectral region corresponding to P-O and P=O. This sudden change indicates a deprotonation of the acid. XPS studies revealed the presence of extra oxygen atoms as well as gallium species in the layer, leading to the conclusion that phosphonate and hydrogenophosphonate ions are present in the PPA layer intercalated with H3O+ and Ga3+ ions. This mechanism enables the formation of layers approximately 10 times thicker than those obtained with lower H2O percentages. HREELS indicated that the surface is composed of regions covered by PPA layers and uncovered regions, but the uncovered regions disappeared for water contents equal to or higher than 5%. XPS results are interpreted using a model consisting of a monolayer partially covering the surface and a thick layer. This model is consistent with AFM images revealing roughness on the order of 7 nm for the thick layer and 0.2-0.5 nm for the thin layer. Sonication proves to be an effective method for reducing layer thickness.     

Grazing incidence X-ray photoemission spectroscopy of SiO2 on Si

We have applied grazing incidence X-ray photoemission spectroscopy to the determination of the thickness of SiO₂ layers on Si, as well as surface carbon that is present. The measurements take advantage of the different optical constants of the layers. X-rays incident on the surface at grazing angle undergo total external reflection, where the fields in each layer are subject to highly non-linear changes as a function of incidence angle. X-ray photoemission excited by these fields gives information on atomic species, chemical state, and layer thickness. Simultaneous fits are made to the photoemission spectra in each layer. The method is illustrated for a thermally grown oxide layer and a native oxide on Si.     

Synchrotron photoemission analysis of semiconductor/electrolyte interfaces by the frozen-electrolyte approach: interaction of HCl in 2-propanol with GaAs(100)

Perspectives of a new approach for the synchrotron photoemission spectroscopic analysis of chemical processes at solid/liquid interfaces under UHV conditions have been explored. A thin layer of HCl-2-propanol solution was frozen-in on the semiconductor GaAs(100) wafer surface by cooling the substrate to liquid nitrogen temperature after etching off the native oxide layer under N2 atmosphere. Chemical reactions induced in situ by exposure to synchrotron radiation (SR) and by stepwise heating have been monitored. Right after etching and freezing, the surface is covered by gallium chlorides with 1, 2, 3, and 4 Cl ions attached and lattice back-bonded to As atoms, as well as by elemental arsenic As0 and 2-propanol. Exposure to SR at low temperature produces surface As chlorides at the expense of As0. The GaCl3 and GaCl2 emissions diminish while GaCl is enhanced. On the other hand, heating the sample to approximately 130 K just above H2O desorption causes the thermodynamically expected reaction of AsCl3 with the substrate GaAs to form Ga chloride species and As0. Heating the sample to room temperature leaves only As0 on the surface and for gallium the content of all surface chlorides is drastically reduced. By further heating to 400 K elemental arsenic starts to desorb and the Ga chloride surface content is reduced. Using different excitation energies the depth composition of the reaction products has been monitored indicating a tendency of decreasing chlorination numbers and increasing Ga vs As chloride content toward the pristine substrate at each stage of the reaction.     

Reactivity of hydrogen species on oxide surfaces

Hydrogen species on oxides are widely involved in oxides-catalyzed reactions such as H_2/hydrocarbon oxidation, hydrogenation/dehydrogenation, water-gas shift, and water-splitting reactions. Thus identifications of hydrogen species on oxide surfaces and their reactivity are important for fundamental understanding of these oxides-catalyzed reactions. In this Feature Article, we briefly review our research progress on the reactivity of various hydrogen species on oxides, including surface hydroxyl species,hydride species and hydrated protons. We have successfully developed effective strategies of using gas-phase atomic H to controllably create oxygen vacancies and prepare various hydrogen species on oxide model catalysts under ultra-high vacuum(UHV) conditions and using well-defined oxide nanocrystals with different surface structures and oxygen vacancy concentrations to study the H_2-oxide interaction under ambient or even higher H_2 pressures. Reactivity of various hydrogen species on oxide surfaces has been identified, including local oxygen vacancy-controlled reactivity of OH species, oxygen vacancystabilized hydride species, homolytic dissociation of H2 at oxygen vacancies of reduced oxide surfaces into hydride species accompanied by surface oxidation, photoexcited holes-stimulated desorption of hydride species, electron-stimulated desorption of hydride and OH species, and photoexcited electrons-stimulated desorption of hydrated protons. Strong influences of oxygen vacancies in oxides on both stability and reactivity of various hydrogen species on oxide surfaces are highlighted.