Initial stage of Si(001) surface oxidation from first-principles calculations

A comprehensive density-functional theory (DFT) study of the atomic structure, electronic properties, and optical response of the Si(001) surface at the initial stages of oxidation is presented. The most favored adsorption position of a single O atom on top of the (4 x 2)-reconstructed Si(001) surface is found at the back-bond of the "down" Si dimer atom. There is no energy barrier for oxygen insertion into this bond. The ionization energy of the surface reaches a maximum when the oxidation of the second Si monolayer starts. Oxidation leads to an increase of the energy gap between occupied and empty surface states. The calculated reflectance anisotropy spectroscopy (RAS) data in comparison with experiment suggest a considerable amount of surface disorder already after oxidation of the first monolayer.     

Passive and active oxidation of Si(100) by atomic oxygen: a theoretical study of possible reaction mechanisms

Reaction mechanisms for oxidation of the Si(100) surface by atomic oxygen were studied with high-level quantum mechanical methods in combination with a hybrid QM/MM (Quantum mechanics/Molecular Mechanics) method. Consistent with previous experimental and theoretical results, three structures, "back-bond", "on-dimer", and "dimer-bridge", are found to be the most stable initial surface products for O adsorption (and in the formation of SiO(2) films, i.e., passive oxidation). All of these structures have significant diradical character. In particular, the "dimer-bridge" is a singlet diradical. Although the ground state of the separated reactants, O+Si(100), is a triplet, once the O atom makes a chemical bond with the surface, the singlet potential energy surface is the ground state. With mild activation energy, these three surface products can be interconverted, illustrating the possibility of the thermal redistribution among the initial surface products. Two channels for SiO desorption (leading to etching, i.e., active oxidation) have been found, both of which start from the back-bond structure. These are referred to as the silicon-first (SF) and oxygen-first (OF) mechanisms. Both mechanisms require an 89.8 kcal/mol desorption barrier, in good agreement with the experimental estimates of 80-90 kcal/mol. "Secondary etching" channels occurring after initial etching may account for other lower experimental desorption barriers. The calculated 52.2 kcal/mol desorption barrier for one such secondary etching channel suggests that the great variation in reported experimental barriers for active oxidation may be due to these different active oxidation channels.     

Chemistry of O‐ and H‐Containing Species on the (001) Surface of Anatase TiO2: A DFT Study

The chemistry of oxygen, hydrogen, water, and other species containing both oxygen and hydrogen atoms on the anatase TiO₂ (001) surface is investigated by DFT. The adsorption energy of atoms and radicals depends appreciably on the position and mode of adsorption, and on the coverage. Molecular hydrogen and oxygen interact weakly with the clean surface. However, H₂O dissociates spontaneously to give two nonidentical hydroxyl groups, and this provides a model for hydroxylation of TiO₂ surfaces by water. The mobility of the hydroxyl groups created by water splitting is initially impeded by a diffusion barrier close to 1 eV. The O₂ adsorption energy increases significantly in the presence of H atoms. Hydroperoxy (OOH) formation is feasible if at least two H atoms are present in the direct vicinity of O₂. In the adsorbed OOH, the O? O bond is considerably lengthened and thus weakened.     

Structure and stability of oxygen adsorption on Si(n) (n = 5-10) clusters

The structures, binding energies, and electronic properties of one oxygen atom (O) and two oxygen atoms (2O) adsorption on silicon clusters Si(n) with n ranging from 5 to 10 are studied systematically by ab initio calculations. Twelve stable structures are obtained, two of which are in agreement with those reported in previous literature and the others are new structures that have not been proposed before. Further investigations on the fragmentations of Si(n)O and Si(n)O2 (n = 5-10) clusters indicate that the pathways Si(n)O --> Si(n-1) + SiO and Si(n)O2 --> Si(n-2) + Si2O2 are most favorable from thermodynamic viewpoint. Among the studied silicon oxide clusters, Si8O, Si9O, Si5O2 and Si8O2 correspond to large adsorption energies of silicon clusters with respect to O or 2O, while Si8O, with the smallest dissociation energy, has a tendency to separate into Si7 + SiO. Using the recently developed quasi-atomic minimal-basis-orbital method, we have also calculated the unsaturated valences of the neutral Si(n) clusters. Our calculation results show that the Si atoms which have the largest unsaturated valences are more attractive to O atom. Placing O atom right around the Si atoms with the largest unsaturated valences usually leads to stable structures of the silicon oxide clusters.     

CO在CeO2(111)表面的吸附与氧化

采用密度泛函理论计算了CO在CeO2(111)表面的吸附与氧化反应行为. 结果表明, O2在洁净的CeO2(111)表面为弱物理吸附, 而在氧空位表面是强化学吸附, 且O2分子活化程度较大, O—O键长为0.143 nm. CO在CeO2(111)表面吸附行为的研究表明, CO在洁净表面及氧空位表面上为物理吸附, 吸附能均小于0.42 eV; 当表面氧空位吸附O2后, CO可吸附生成二齿碳酸盐中间体或直接生成CO2, 与原位红外光谱结果相一致. 表面碳酸盐物种脱附生成CO2的能垒仅为0.28 eV. 计算结果表明, 当CeO2表面存在氧空位时, Hubbard参数U对CO吸附能有一定的影响. CeO2载体在氧化反应中可能的催化作用为, 在氧气氛下, CeO2表面氧空位吸附O2分子, 形成活性氧物种, 参与CO催化氧化反应.     

Hydrogen desorption kinetics from the Si(1-x)Gex(100)-(2x1) surface

We study the influence of germanium atoms upon molecular hydrogen desorption energetics using density functional cluster calculations. A three-dimer cluster is used to model the Si((1-x))Ge(x)(100)-(2x1) surface. The relative stabilities of the various monohydride and clean surface configurations are computed. We also compute the energy barriers for desorption from silicon, germanium, and mixed dimers with various neighboring configurations of silicon and germanium atoms. Our results indicate that there are two desorption channels from mixed dimers, one with an energy barrier close to that for desorption from germanium dimers and one with an energy barrier close to that for desorption from silicon dimers. Coupled with the preferential formation of mixed dimers over silicon or germanium dimers on the surface, our results suggest that the low barrier mixed dimer channel plays an important role in hydrogen desorption from silicon-germanium surfaces. A simple kinetics model is used to show that reasonable thermal desorption spectra result from incorporating this channel into the mechanism for hydrogen desorption. Our results help to resolve the discrepancy between the surface germanium coverage found from thermal desorption spectra analysis, and the results of composition measurements using photoemission experiments. We also find from our cluster calculations that germanium dimers exert little influence upon the hydrogen desorption barriers of neighboring silicon or germanium dimers. However, a relatively larger effect upon the desorption barrier is observed in our calculations when germanium atoms are present in the second layer.     

Effect of Hydrogen on O2 Adsorption and Dissociation on a TiO2 Anatase (001) Surface

The effect of hydrogen on the adsorption and dissociation of the oxygen molecule on a TiO₂ anatase (001) surface is studied by first‐principles calculations coupled with the nudged elastic band (NEB) method. Hydrogen adatoms on the surface can increase the absolute value of the adsorption energy of the oxygen molecule. A single H adatom on an anatase (001) surface can lower dramatically the dissociation barrier of the oxygen molecule. The adsorption energy of an O₂ molecule is high enough to break the O?O bond. The system energy is lowered after dissociation. If two H adatoms are together on the surface, an oxygen molecule can be also strongly adsorbed, and the adsorption energy is high enough to break the O?O bond. However, the system energy increases after dissociation. Because dissociation of the oxygen molecule on a hydrogenated anatase (001) surface is more efficient, and the oxygen adatoms on the anatase surface can be used to oxidize other adsorbed toxic small gas molecules, hydrogenated anatase is a promising catalyst candidate.     

Molecular beam investigation of hydrogen dissociation on Si(001) and Si(111) surfaces

The influence of molecular vibrations on the reaction dynamics of H2 on Si(001) as well as isotopic effects have been investigated by means of optical second-harmonic generation and molecular beam techniques. Enhanced dissociation of vibrationally excited H2 on Si(001)2 x 1 has been found corresponding to a reduction of the mean adsorption barrier to 390 meV and 180 meV for nu=1 and nu=2, respectively. The adsorption dynamics of the isotopes H2 and D2 show only small differences in the accessible range of beam energies between 50 meV and 350 meV. They are traced back to different degrees of vibrational excitation and do not point to an important influence of quantum tunneling in crossing the adsorption barrier. The sticking probability of H2 on the 7 x 7-reconstructed Si(111) surface was found to be activated both by H2 kinetic energy and surface temperature in a qualitatively similar fashion as H2/Si(001)2 x 1. Quantitatively, the overall sticking probabilities of H2 on the Si(111) surface are about one order of magnitude lower than on Si(001), the influence of surface temperature is generally stronger.     

Thermally activated mechanisms of hydrogen abstraction by growth precursors during plasma deposition of silicon thin films

Hydrogen abstraction by growth precursors is the dominant process responsible for reducing the hydrogen content of amorphous silicon thin films grown from SiH(4) discharges at low temperatures. Besides direct (Eley-Rideal) abstraction, gas-phase radicals may first adsorb on the growth surface and abstract hydrogen in a subsequent process, giving rise to thermally activated precursor-mediated (PM) and Langmuir-Hinshelwood (LH) abstraction mechanisms. Using results of first-principles density functional theory (DFT) calculations on the interaction of SiH(3) radicals with the hydrogen-terminated Si(001)-(2x1) surface, we show that precursor-mediated abstraction mechanisms can be described by a chemisorbed SiH(3) radical hopping between overcoordinated surface Si atoms while being weakly bonded to the surface before encountering a favorable site for hydrogen abstraction. The calculated energy barrier of 0.39 eV for the PM abstraction reaction is commensurate with the calculated barrier of 0.43-0.47 eV for diffusion of SiH(3) on the hydrogen-terminated Si(001)-(2x1) surface, which allows the radical to sample the entire surface for hydrogen atoms to abstract. In addition, using the same type of DFT analysis we have found that LH reaction pathways involve bond breaking between the silicon atoms of the chemisorbed SiH(3) radical and the film prior to hydrogen abstraction. The LH reaction pathways exhibit energy barriers of 0.76 eV or higher, confining the abstraction only to nearest-neighbor hydrogens. Furthermore, we have found that LH processes compete with radical desorption from the hydrogen-terminated Si(001)-(2x1) surface and may be suppressed by the dissociation of chemisorbed SiH(3) radicals into lower surface hydrides. Analysis of molecular-dynamics simulations of the growth process of plasma deposited silicon films have revealed that qualitatively similar pathways for thermally activated hydrogen abstraction also occur commonly on the amorphous silicon growth surface.     

Adsorption of atomic and molecular oxygen on the LaMnO3(001) surface: ab initio supercell calculations and thermodynamics

We present and discuss the results of ab initio DFT plane-wave supercell calculations of the atomic and molecular oxygen adsorption and diffusion on the LaMnO(3) (001) surface which serves as a model material for a cathode of solid oxide fuel cells. The dissociative adsorption of O(2) molecules from the gas phase is energetically favorable on surface Mn ions even on a defect-free surface. The surface migration energy for adsorbed O ions is found to be quite high, 2.0 eV. We predict that the adsorbed O atoms could penetrate the electrode first plane when much more mobile surface oxygen vacancies (migration energy of 0.69 eV) approach the O ions strongly bound to the surface Mn ions. The formation of the O vacancy near the O atom adsorbed atop surface Mn ion leads to an increase of the O-Mn binding energy by 0.74 eV whereas the drop of this adsorbed O atom into a vacancy possesses no energy barrier. Ab initio thermodynamics predicts that at typical SOFC operation temperatures (approximately 1200 K) the MnO(2) (001) surface with adsorbed O atoms is the most stable in a very wide range of oxygen gas pressures (above 10(-2) atm).     

Ab initio surface reaction energetics of SiH4 and Si2H6 on Si(001)-(2 x 2)

First-principles pseudopotential calculations, within a simple dynamically constrained scheme, have been performed to investigate the reaction of 0.25 ML coverage of SiH4 and Si2H6 with the Si(001)-(2 x 2) surface. The silane molecule (SiH4) is adsorbed on to the surface at a number of different sites (on dimer, interrow, or intrarow) with varying barrier heights. Two distinct structures, which are similar in energy, arise from the initial dissociative reaction SiH4-->SiH3(silyl) + H, where the dissociated species are adsorbed either on the same dimer components or on adjacent dimer components. Several further decays of silyl from SiH4 are presented in two separate regimes of high and low ambient hydrogen coverages. The decomposition of silyl can form two different bridging structures: an on top or an intrarow bridging structure in both of the two hydrogen coverage regimes. The disilane molecule (Si2H6) is also adsorbed upon this surface with varying energy barriers, resulting in a dissociation reaction where two SiH3 species are adsorbed on one dimer or in an adjacent dimer configuration. Plausible energy reaction paths for the above models are presented. The stability of the SiH2 species is also discussed.     

Positrons as probes of Si(100) surface with adsorbed hydrogen and oxygen

Positron annihilation induced Auger spectra from the Si(100) surface exposed to hydrogen and oxygen are analyzed by performing calculations of positron surface states and annihilation characteristics of surface trapped positrons. Positron binding energies and work functions are also computed. It is found that the adsorption of hydrogen and oxygen on the Si(100) surface leads to a displacement of the positron surface state wave function away from the substrate Si atoms. As a result of this displacement, the overlap of the positron wave function with Si core electrons and, consequently, the annihilation probability of Si core electrons reduce, in agreement with experimental data.     

Oxidation pattern of small silicon oxide clusters: structures and stability of Si6On (n = 1-12)

We have performed systematic ab initio calculations to study the structures and stability of Si(6)O(n)() clusters (n = 1-12) in order to understand the oxidation process in silicon systems. Our calculation results show that oxidation pattern of the small silicon cluster, with continuous addition of O atoms, extends from one side to the entire Si cluster. Si atoms are found to be separated from the pure Si cluster one-by-one by insertion of oxygen into the Si-O bonds. From fragmentation energy analyses, it is found that the Si-rich clusters usually dissociate into a smaller pure Si clusters (Si(5), Si(4), Si(3), or Si(2)), plus oxide fragments such as SiO, Si(2)O(2), Si(3)O(3), Si(3)O(4), and Si(4)O(5). We have also studied the structures of the ionic Si(6)O(n)(+/-) (n = 1-12) clusters and found that most of ionic clusters have different lowest-energy structures in comparison with the neutral clusters. Our calculation results suggest that transformation Si(6)O(n)+(a) + O --> Si(6)O(n+1)+(a) should be easier.     

Periodic density functional theory study of methane activation over La(2)O(3): activity of O(2-), O(-), O(2)(2-), oxygen point defect,and Sr(2+)-doped surface sites

Results of gradient-corrected periodic density functional theory calculations are reported for hydrogen abstraction from methane at O(s)(2-), O(s)(-), O(2)(s)(2-) point defect, and Sr(2+)-doped surface sites on La(2)O(3)(001). The results show that the anionic O(s)(-) species is the most active surface oxygen site. The overall reaction energy to activate methane at an O(s)(-) site to form a surface hydroxyl group and gas-phase (*)CH(3) radical is 8.2 kcal/mol, with an activation barrier of 10.1 kcal/mol. The binding energy of hydrogen at an site O(s)(-) is -102 kcal/mol. An oxygen site with similar activity can be generated by doping strontium into the oxide by a direct Sr(2+)/La(3+) exchange at the surface. The O(-)-like nature of the surface site is reflected in a calculated hydrogen binding energy of -109.7 kcal/mol. Calculations indicate that surface peroxide (O(2(s))(2-)) sites can be generated by adsorption of O(2) at surface oxygen vacancies, as well as by dissociative adsorption of O(2) across the closed-shell oxide surface of La(2)O(3)(001). The overall reaction energy and apparent activation barrier for the latter pathway are calculated to be only 12.1 and 33.0 kcal/mol, respectively. Irrespective of the route to peroxide formation, the O(2)(s)(2-) intermediate is characterized by a bent orientation with respect to the surface and an O-O bond length of 1.47 A; both attributes are consistent with structural features characteristic of classical peroxides. We found surface peroxide sites to be slightly less favorable for H-abstraction from methane than the O(s)(-) species, with DeltaE(rxn)(CH(4)) = 39.3 kcal/mol, E(act) = 47.3 kcal/mol, and DeltaE(ads)(H) = -71.5 kcal/mol. A possible mechanism for oxidative coupling of methane over La(2)O(3)(001) involving surface peroxides as the active oxygen source is suggested.     

Theoretical calculation of the dehydrogenation of ethanol on a Rh/CeO2(111) surface

We applied periodic density-functional theory (DFT) to investigate the dehydrogenation of ethanol on a Rh/CeO2 (111) surface. Ethanol is calculated to have the greatest energy of adsorption when the oxygen atom of the molecule is adsorbed onto a Ce atom in the surface, relative to other surface atoms (Rh or O). Before forming a six-membered ring of an oxametallacyclic compound (Rh-CH2CH2O-Ce(a)), two hydrogen atoms from ethanol are first eliminated; the barriers for dissociation of the O-H and the beta-carbon (CH2-H) hydrogens are calculated to be 12.00 and 28.57 kcal/mol, respectively. The dehydrogenated H atom has the greatest adsorption energy (E(ads) = 101.59 kcal/mol) when it is adsorbed onto an oxygen atom of the surface. The dehydrogenation continues with the loss of two hydrogens from the alpha-carbon, forming an intermediate species Rh-CH2CO-Ce(a), for which the successive barriers are 34.26 and 40.84 kcal/mol. Scission of the C-C bond occurs at this stage with a dissociation barrier Ea = 49.54 kcal/mol, to form Rh-CH(2(a)) + 4H(a) + CO(g). At high temperatures, these adsorbates desorb to yield the final products CH(4(g)), H(2(g)), and CO(g).     

Pt/Cu(001)-p(2×2)-O表面吸附结构的总能计算

采用密度泛函理论(DFT)研究了氧吸附后Pt/Cu(001)表面合金的原子结构和表面性质. 计算结果表明, 在Pt/Cu(001)-p(2×2)-O表面最稳定结构中, 衬底表面原子层不发生再构, 氧原子吸附于4重对称的Pt原子谷位, 每个氧原子吸附能约为2.303 eV. 吸附结构的Cu—O和Pt—O键键长分别为0.202和0.298 nm, 氧原子的吸附高度ZCu—O约为0.092 nm. 吸附前后Pt/Cu(001)-1ML(monolayer)表面合金的表面功函数分别为4.678和5.355 eV. 吸附表面氧原子和衬底的结合主要来自氧原子2p轨道和衬底金属原子d轨道的杂化作用, 氧原子吸附形成的表面电子态主要位于费米能级以下约-2.7 eV 处.     

Pt原子在γ-Al2O3(001)表面的吸附及迁移

采用密度泛函理论(DFT)中广义梯度近似(GGA)方法, 对Pt原子与γ-Al₂O₃(001)面的相互作用及迁移性能进行了研究. 分析了各种可能吸附位及吸附构型的松弛和变形现象, 吸附能和迁移能垒的计算结果表明: Pt团簇能够稳定吸附在该表面. Pt原子在表面O位的吸附能明显较高, 这主要是由Pt向基底O原子转移了电子所致. 电荷布居分析表明, Pt原子显电正性, Pt和Al原子之间存在排斥作用, 导致与Al原子产生较弱相互作用. 计算的平均吸附能大小依赖于Pt团簇的大小和形状, 总体趋势是随着Pt原子数增多, 吸附能降低. Pt原子在γ-Al₂O₃(001)表面迁移过程所需克服的迁移能垒最高值为0.51 eV. 随着吸附的Pt原子数增多,更倾向于形成Pt团簇. 因此, Pt原子在γ-Al₂O₃(001)表面的吸附演变不可能形成光滑、均匀平铺的吸附构型, 而在一定条件下容易出现团聚.     

Modulating the reactivity of Ni-containing Pt(111)-skin catalysts by density functional theory calculations

We present here a first principles density functional theory investigation of the reactivity of Pt(111)-skin catalysts, which are varied from surface alloys with Ni to bulk PtxNi 1-x (x=0.25,0.50,0.75) alloys. Molecule (CO, O, and H) adsorption and oxidation of CO+O and H+O reactions were studied and analyzed in detail. Independent of the adsorbates, the interaction between adsorbates and substrates becomes weakened with increase in Ni, due to the downshift of d-band center of surface Pt atoms. Moreover, activation barriers of CO and H oxidation toward atomic oxygen gradually decrease. In term of CO preferential oxidation (PROX) in excess of hydrogen, it turns out that the overall reactivity and selectivity rely on the optimum of various elementary steps involved such as competitive molecular (dissociative) adsorption and oxidation reaction. The present calculations show that Pt3Ni(111) with Pt overlayer is an optimum catalyst for CO PROX in excess of hydrogen.     

Desorption related to adsorption of hydrogen via detailed balance on the Si(1 0 0) surfaces

Recent progress on desorption and adsorption dynamics of hydrogen (deuterium) on monohydride and dihydride Si(1 0 0) surfaces is reviewed and discussed. The dynamics experiments reveal that the desorption dynamics of hydrogen is well related to the adsorption dynamics via detailed balance. Dependence of time-of-flight (TOF) distributions of desorbed molecules on H(D) coverage is noticed to be important in understanding the kinetics mechanism of the adsorption/desorption reactions of hydrogen on the Si(1 0 0) surface. The desorption dynamics varies from the situation of strongly translational heating to the other situation of less translational heating with D coverage. This trend seems to be consistent with the 2H/3H/4H interdimer mechanism. However, despites by far the richest 4H configuration at high H coverage, the 2H desorption prevails over the 4H desorption already at 0.8 ML. To reconcile this unexpected desorption kinetics, a diffusion-promoted desorption mechanism is proposed. Height of the adsorption barriers for the 2H and 3H pathways could be reduced by the H-atom diffusion along the Si dimer rows, but that for the 4H pathway could not be the case because of no capability of diffusion on the H saturated surface. The desorption dynamics of hydrogen from the (3 × 1) dihydride surface is also reviewed and compared with the case on the monohydride surface. The sticking coefficients of hydrogen molecules onto the monohydride surfaces are evaluated from the TOF curves and found to be strongly activated by the kinetic energy. Not only the degrees of freedom of the molecules but also the vibrational degrees of freedom of substrate Si atoms determine the barrier height for adsorption. The desorption dynamics of hydrogen from the monohydride and dihydride surfaces appears to be quite similar, but the dynamics of substrate Si atoms is expected to be quite dissimilar between the two desorption pathways.     

The interaction of oxygen with TiC(001): photoemission and first-principles studies

High-resolution photoemission and first-principles density-functional slab calculations were used to study the interaction of oxygen with a TiC(001) surface. Atomic oxygen is present on the TiC(001) substrate after small doses of O(2) at room temperature. A big positive shift (1.5-1.8 eV) was detected for the C 1s core level. These photoemission studies suggest the existence of strong O<-->C interactions. A phenomenon corroborated by the results of first-principles calculations, which show a CTiTi hollow as the most stable site for the adsorption of O. Ti and C atoms are involved in the adsorption and dissociation of the O(2) molecule. In general, the bond between O and the TiC(001) surface contains a large degree of ionic character. The carbide-->O charge transfer is substantial even at high coverages (>0.5 ML) of oxygen. At 500 K and large doses of O(2), oxidation of the carbide surface occurs with the removal of C and formation of titanium oxides. There is an activation barrier for the exchange of Ti-C and Ti-O bonds which is overcome only by the formation of C-C or C-O bonds on the surface. The mechanism for the removal of a C atom as CO gas involves a minimum of two O adatoms, and three O adatoms are required for the formation of CO(2) gas. Due to the high stability of TiC, an O adatom alone cannot induce the generation of a C vacancy in a flat TiC(001) surface.