ZnO掺杂的SnO_2纳米纤维的制备、表征及气敏机理(英文)

以二水氯化亚锡(SnCl2·2H2O)为盐原料,采用静电纺丝的方法制备了SnO2纳米纤维.为了研究ZnO掺杂对SnO2形貌、结构及化学成分的影响,分别制备了不同含量ZnO掺杂的SnO2/ZnO复合材料.利用热重-差热分析(TG-DTA)、X射线衍射(XRD)、傅里叶变换红外(FTIR)光谱仪、扫描电镜(SEM)及能量色散X射线(EDX)光谱对材料的结晶学特性及微结构进行了表征.制备的SnO2/ZnO复合材料是由纳米量级的小颗粒构成的分级结构材料.ZnO含量不同,对应的SnO2/ZnO复合材料结构不同.表征结果表明ZnO的掺杂量对SnO2材料的形貌及结构均起着重要作用.将制备的不同ZnO含量的SnO2/ZnO复合材料进行气敏测试,测试结果表明,Sn:Zn摩尔比为1:1制作的气敏元件对甲醇的灵敏度优于其它摩尔比的气敏元件.讨论了SnO2/ZnO复合材料气敏元件的敏感机理.同时针对Sn:Zn摩尔比为1:1时表现出最好的气敏响应,分析了其原因,包括Zn的替位式掺杂行为、ZnO的催化作用、过量ZnO对SnO2生长的抑制作用以及SnO2与ZnO晶粒界面处的异质结.     

纳米锡锌复合氧化物贮锂材料的合成和性质

用液相沉淀-热解法合成了一系列结构和组成不同的锂离子电池纳米锡锌复合氧化物贮锂材料, 通过XRD、TEM和电化学测试对材料进行了表征. 测试结果表明, 非晶态ZnSnO3负极材料的初始可逆贮锂容量为844 mA·h/g, ZnO·SnO2负极材料的初始可逆贮锂容量为845 mA·h/g, SnO2·Zn2SnO4复合物负极材料初始可逆贮锂容量为758 mA·h/g, 循环10周后, 三者的充电容量分别为695, 508和455 mA·h/g, 表明非晶态结构的锡锌复合氧化物具有较好的电化学性质, 随着样品中晶体的形成, 该类型负极材料的贮锂性能下降.     

透射电子显微镜原位观察Cu/ZnO甲醇催化剂前驱体的分解过程

本文通过透射电子显微镜原位研究了甲醇催化剂前驱体锌孔雀石的分解过程。HRTEM、电子衍射及STEM面扫元素分析结果显示锌孔雀石分解过程可大致分为四个阶段。分解首先同时引发于锌孔雀石晶体内部的随机区域和晶体外表面,导致局域结构塌陷形成内部孔洞和非晶表面扩散层;随后孔洞逐渐增多增大,表面扩散层进一步增厚,同时CuO在孔洞区域和表面扩散层区域逐步结晶形成小晶粒;最后锌孔雀石结构完全分解,形成相互交织的CuO和ZnO,其中CuO小晶粒被非晶态ZnO相互隔离;此后进一步加热,ZnO方逐步结晶得到相互交织的CuO晶粒和ZnO晶粒,即焙烧后催化剂的结构。本研究通过TEM直观观察了整个分解过程的结构变化,增进了对甲醇催化剂前驱体焙烧过程的理解,也将有助于优化催化剂焙烧条件。     

锌蒸气的氧化行为与氧化锌的结晶形貌

用热重法测定了不同气氛下锌蒸气的氧化动力学曲线,用扫描电镜跟踪观察分析了产物的结晶形貌,结果表明,氧化动力学遵守直线规律时,产物是无定形、颗粒状和单针状的ZnO;氧化动力学为抛物线规律时,产物是四针状或多针状的ZnO.动力学转变规律的原因是锌蒸气中气态锌原子与凝聚生成的锌液滴之间存在动态平衡,气态锌原子的氧化过程遵守直线规律;而锌液滴的氧化过程分为两个阶段,分别受收缩球状界面反应模型R₃和三维扩散模型D4动力学控制,表观活化能分别为106.3～108.2和114.2～117.3kJ/mol;扩散过程实际上是锌原子通过氧化膜层由里向外扩散,扩散系数D=2.46～9.70×10^-5cm²/s.     

SnO_2 Sb_2O_3中间层的制备条件对Ti/SnO_2 Sb_2O_3/PbO_2阳极性能的影响

研究了聚合前驱体制备的SnO2 Sb2 O3 中间层的焙烧温度、锑含量对Ti/SnO2 Sb2 O3 /PbO2 阳极性能的影响。用XRD、ESEM和探针法对锡锑中间层进行了表征 ,应用阳极寿命快速检测法测定了Ti/SnO2 Sb2 O3 /PbO2 电极在 1 0mol/LH2 SO4溶液中的寿命 ,并用极化曲线和电荷容量表征了锡锑中间层对钛基PbO2 阳极性能的影响。实验结果表明 ,聚合前驱体制备中间层的焙烧温度和锑含量对Ti/SnO2 Sb2 O3 /PbO2 电极的寿命和性能有显著的影响。在锡锑中间层的制备温度为 5 0 0℃、n(Sn)∶n(Sb) =9∶1时 ,制得的Ti/SnO2 Sb2 O3 /PbO2 电极用阳极寿命快速检测法测得的电极寿命达 30h ,具有良好的稳定性     

透射电镜原位观察Cu/ZnO甲醇催化剂前驱体的分解过程（英文）

本文通过透射电镜原位研究了甲醇催化剂前驱体锌孔雀石的分解过程。HRTEM、电子衍射及STEM面扫元素分析结果显示锌孔雀石分解过程可大致分为四个阶段:分解首先同时引发于锌孔雀石晶体内部的随机区域和晶体外表面,导致局域结构塌陷形成内部孔洞和非晶表面扩散层;随后孔洞逐渐增多增大,表面扩散层进一步增厚,同时CuO在孔洞区域和表面扩散层区域逐步结晶形成小晶粒;接着锌孔雀石结构完全分解,形成相互交织的CuO和ZnO,其中CuO小晶粒被非晶态ZnO相互隔离;此后进一步加热,ZnO逐步结晶得到相互交织的CuO晶粒和ZnO晶粒,即焙烧后催化剂的结构。本研究通过TEM直观观察了整个分解过程的结构变化,增进了对甲醇催化剂前驱体焙烧过程的理解,也有助于催化剂焙烧条件的优化。     

Sno2+Sb203中间层的制备条件对Ti/SnO2+Sb2O3/PbO2阳极性能的影响

研究了聚合前驱体制备的SnO2+Sb2O3中间层的焙烧温度、锑含量对Ti/SnO2+Sb2O3/PbO2阳极性能的影响. 用XRD、ESEM和探针法对锡锑中进行了表征,应用阳极寿命快速检测法测定了Ti/SnO2+Sb2O3/PbO2电极在1.0 mol/L H2SO4溶液中的寿命,并用极化曲线和电荷容量表征了锡锑中间层对钛基PbO2阳极性能的影响. 实验结果表明,聚合前驱体制备中间层的焙烧温度和锑含量对Ti/SnO2+Sb2O3/PbO2电极的寿命和性能有显著的影响. 在锡锑中间层的制备温度为500 ℃、n(Sn):n(Sb)=9:1时,制得的Ti/SnO2+Sb2O3/PbO2电极用阳极寿命快速检测法测得的电极寿命达30h,具有良好的稳定性.     

纳米片组装的Zn_2SnO_4空心八面体分级结构的制备与发光性能(英文)

以乙酸锌、四氯化锡、氢氧化钠为原料,在200℃用L-赖氨酸辅助合成纳米片组装的锡酸锌(Zn2SnO4)空心八面体分级结构。采用XRD、FESEM、TEM、HRTEM等对样品进行了表征,结果表明产物为立方相的Zn2SnO4,单个八面体的棱长在1～2μm,并且表面以及棱上长有许多尺寸在200～400nm的纳米片。此外,结果还表明,氢氧化钠和L-赖氨酸的加入量对八面体形状的形成起到了决定性的作用。产物的室温光致发光谱图说明所制备的产物在500～600nm有很强的发光性能。     

二氧化锡填充多壁碳纳米管材料的制备及电化学性能

用硝酸氧化法处理多壁碳纳米管(MWCNTs), 使得MWCNTs端口打开, 长度变短, 表面得到改性. 通过二氯化锡与硝酸银反应, 过滤后的溶液在浓硝酸环境中, Sn2+在毛细作用下扩散进入碳纳米管管腔, 吸附、成核并在热处理作用下沉积, 从而制备出SnO2/MWCNTs纳米复合材料. XRD和TEM测试表明, 部分SnO2填充到MWCNTs管腔, 形成不连续的纳米颗粒. 电化学测试表明, SnO2填充的MWCNTs可以结合两者的优势, 使得复合材料的循环性能和比容量均有所改善.     

Zn_2SnO_4纳米材料制备及光致发光特性

以ZnO、SnO2和活性炭的混合物为原料,通过碳热还原热蒸发法无催化剂成功制备出Zn2SnO4纳米材料.借助X射线衍射仪(XRD)、拉曼光谱和扫描电子显微镜(SEM)对样品物相和形貌进行了表征,结果显示样品为面心立方结构的Zn2SnO4纳米链状棒,同时含有少量的ZnO物相.利用X射线光电子能谱(XPS)对Zn2SnO4样品表面各元素的化学状态及相互作用方式进行了测试,结果表明:样品中Zn和Sn分别是以+2价和+4价氧化态形式存在,其中Zn2p3/2电子有两个结合能,分别来自ZnO和Zn2SnO4,Zn2SnO4中Sn4+占据不同的格点位置.室温下光致发光谱(PL)结果显示,样品在紫外区域(320-450nm)和可见区域存在很强的发光带,其中紫外区域的宽发光带,经过高斯拟合可分为358和385nm两个发光峰,与同条件下制备得到的纯ZnO纳米材料发光谱比较,确认358nm发光峰是来自于Zn2SnO4的近带边复合发光.     

Large-scale synthesis and microstructure of SnO2 nanowires coated with quantum-sized ZnO nanocrystals on a mesh substrate

Large-quantity single-crystal SnO(2) nanowires coated with quantum-sized ZnO nanocrystals (nc-ZnO/SnO(2) nanowires) were directly synthesized by thermal evaporation of SnO powder and a mixture of basic ZnCO(3) and graphite powders. A common stainless steel mesh was used to collect the products. The microstructure and possible growth mechanism of the nc-ZnO/SnO(2) nanowires were investigated. Results showed that tetragonal structured SnO(2) nanowires were obtained, whose surfaces were coated with single-layer ZnO nanocrystals with an average diameter of less than 5 nm. The nanowires had cross-rectangle section with width-to-thickness aspect ratio ranging from 2:1 to 5:1. The lengths of the nanowires were several tens of micrometers. ZnO nanocrystals were single crystalline wurtzite structures, which coated the whole nanowires and distributed uniformly. The possible growth mechanism of the composite nanowires may be enucleated that Zn atoms in the source vapor will replace the Sn atoms on the surface of the formed SnO(2) nanowires due to the higher reducibility of Zn than Sn. Two strong Raman scattering peaks at 626 and 656 cm(-1) appeared in the micro-Raman spectrum of nc-ZnO/SnO(2) nanowires. The origins of the peaks were discussed. Most importantly, the method can be extended to other composite oxide nanowires that are synthesized by oxidizing two kinds of metals, such as high reducibility elements Mg, Al, Zn, and Ti, and low reducibility elements In, Ge, Ga, etc.     

Morphological and photoelectrochemical characterization of core-shell nanoparticle films for dye-sensitized solar cells: Zn-O type shell on SnO2 and TiO2 cores

Core-shell type nanoparticles with SnO2 and TiO2 cores and zinc oxide shells were prepared and characterized by surface sensitive techniques. The influence of the structure of the ZnO shell and the morphology ofnanoparticle films on the performance was evaluated. X-ray absorption near-edge structure and extended X-ray absorption fine structure studies show the presence of thin ZnO-like shells around the nanoparticles at low Zn levels. In the case of SnO2 cores, ZnO nanocrystals are formed at high Zn/Sn ratios (ca. 0.5). Scanning electron microscopy studies show that Zn modification of SnO2 nanoparticles changes the film morphology from a compact mesoporous structure to a less dense macroporous structure. In contrast, Zn modification of TiO2 nanoparticles has no apparent influence on film morphology. For SnO2 cores, adding ZnO improves the solar cell efficiency by increasing light scattering and dye uptake and decreasing recombination. In contrast, adding a ZnO shell to the TiO2 core decreases the cell efficiency, largely owing to a loss of photocurrent resulting from slow electron transport associated with the buildup of the ZnO surface layer.     

Origin of enhancement in open-circuit voltage by adding ZnO to nanocrystalline SnO2 in dye-sensitized solar cells

SnO2 + ZnO working electrodes for dye-sensitized solar cells were made by mixing a nanocrystalline SnO2 colloidal dispersion with ZnO or Zn(CH3COO)2. Addition of ZnO or Zn(CH3COO)2 enhanced the open-circuit voltage (V(oc)) of the cells with respect to cells containing only SnO2. Dependence of the electron lifetime in the electrodes on short-circuit photocurrent density (J(sc)) gave evidence against the assumption that the suppression of back electron transfer to the electrolyte is the origin for the V(oc) enhancement by addition of Zn. V(oc) dependence on temperatures indicated a decrease in the combined capacitance of the mixed electrode. The slope of the V(oc) dependence versus the logarithm of J(sc) indicated that the contribution of unpinning of the band to the enhancement of V(oc) could be neglected. From the cyclic voltammograms of the electrodes, the combined capacitance of the mixed electrode was 1 order of magnitude smaller than that of SnO2. The decrease in the combined capacitance in the mixed electrode could be explained by the decrease in the chemical capacitance of SnO2, thus the shift of the conduction band position toward the vacuum level. X-ray photoelectron spectra of Sn 3d(5/2) peaks showed a shift toward lower binding energy with an increasing amount of added Zn. This was attributed to an increase in the surface potential toward the negative direction, which might have resulted from a dipole moment formed by Zn on the surface of SnO2.     

Soft X-ray characterization of Zn(1-x)Sn(x)O(y) electronic structure for thin film photovoltaics

Zinc tin oxide (Zn(1-x)Sn(x)O(y)) has been proposed as an alternative buffer layer material to the toxic, and light narrow-bandgap CdS layer in CuIn(1-x),Ga(x)Se(2) thin film solar cell modules. In this present study, synchrotron-based soft X-ray absorption and emission spectroscopies have been employed to probe the densities of states of intrinsic ZnO, Zn(1-x)Sn(x)O(y) and SnO(x) thin films grown by atomic layer deposition. A distinct variation in the bandgap is observed with increasing Sn concentration, which has been confirmed independently by combined ellipsometry-reflectometry measurements. These data correlate directly to the open circuit potentials of corresponding solar cells, indicating that the buffer layer composition is associated with a modification of the band discontinuity at the CIGS interface. Resonantly excited emission spectra, which express the admixture of unoccupied O 2p with Zn 3d, 4s, and 4p states, reveal a strong suppression in the hybridization between the O 2p conduction band and the Zn 3d valence band with increasing Sn concentration.     

Incorporating Zn(2) SnO(4) Quantum Dots and Aggregates for Enhanced Performance in Dye-Sensitized ZnO Solar Cells

The performance of dye-sensitized ZnO solar cells was improved by a facile surface-treatment approach through chemical-bath deposition. After the surface treatment, the quantum dots of Zn(2) SnO(4) were deposited onto ZnO nanoparticles accompanied by the aggregations of Zn(2) SnO(4) nanoparticles. The ZnO film displayed a better resistance to acidic dye solution on account of the deposited Zn(2) SnO(4) nanoparticles. Meanwhile, the open-circuit photovoltage was greatly enhanced, which can be ascribed to the increased conduction-band edge of ZnO and inhibited interfacial charge recombination. Although the deposition of Zn(2) SnO(4) decreased the adsorption amounts of N719 dye, the aggregates of Zn(2) SnO(4) with a size of 350-450?nm acted as the effective light-scattering layer, thereby resulting in an improved short-circuit photocurrent. By co-sensitizing 10?μm-thick ZnO film with N719 and D131 dyes, a top efficiency of 4.38?% was achieved under the illumination of one sun (AM?1.5, 100?mW?cm(-2) ).     

SnO2(110)弛豫表面构型与电子结构的第一性原理研究

采用基于第一性原理的密度泛函方法对SnO₂(110)表面的构型和电子结构进行了系统研究. 结果表明, 与理想表面相比, 表面弛豫导致表层五配位Sn原子向体相方向位移, 六配位Sn原子以及表面氧原子往真空方向移动, 而桥氧原子位置基本保持不变. 当表面厚度小于3 nm时, 表面能和表层原子的弛豫大小随着层数的增加出现振荡现象. 由能带计算结果得知, 以桥氧的2p_y/2i>p_z轨道为主要成分的能带出现在体相的带隙中. 进一步考察了弛豫对表面电子结构的影响.     

Tin oxide dependence of the CO2 reduction efficiency on tin electrodes and enhanced activity for tin/tin oxide thin-film catalysts

The importance of tin oxide (SnO(x)) to the efficiency of CO(2) reduction on Sn was evaluated by comparing the activity of Sn electrodes that had been subjected to different pre-electrolysis treatments. In aqueous NaHCO(3) solution saturated with CO(2), a Sn electrode with a native SnO(x) layer exhibited potential-dependent CO(2) reduction activity consistent with previously reported activity. In contrast, an electrode etched to expose fresh Sn(0) surface exhibited higher overall current densities but almost exclusive H(2) evolution over the entire 0.5 V range of potentials examined. Subsequently, a thin-film catalyst was prepared by simultaneous electrodeposition of Sn(0) and SnO(x) on a Ti electrode. This catalyst exhibited up to 8-fold higher partial current density and 4-fold higher faradaic efficiency for CO(2) reduction than a Sn electrode with a native SnO(x) layer. Our results implicate the participation of SnO(x) in the CO(2) reduction pathway on Sn electrodes and suggest that metal/metal oxide composite materials are promising catalysts for sustainable fuel synthesis.     

Electrochemical insertion of lithium in mechanochemically synthesized Zn2SnO4

We studied the electrochemical insertion of Li in mechanochemically prepared Zn(2)SnO(4). The mechanism of the electrochemical reaction was investigated by using X-ray diffraction, nuclear magnetic resonance spectroscopy, and M?ssbauer spectroscopy. Changes in the morphology of the Zn(2)SnO(4) particles were studied by in situ scanning electron microscopy. The results were compared with mixtures of SnO(2) + ZnO and with Zn(2)SnO(4) prepared by conventional solid-state synthesis and showed that the mechanochemically prepared Zn(2)SnO(4) exhibits the best cyclic stability of these samples.     

Structural characterizations and electronic properties of Ti-doped SnO2(110) surface: a first-principles study

The Ti-doped SnO2(110) surface has been investigated by using first-principles method with a slab model. The geometrical optimizations and band-structure calculations have been performed for four possible doping models. Our results indicate that the substitution of Ti for sixfold-coordinated Sn atom at the top layer is most energetically favorable. Compared to the undoped surface, those Sn and O atoms located above Ti atom tend to move toward the bulk side. Besides the surface relaxations, the doping of Ti has significant influences on the electronic structures of SnO2(110) surface, including the value and position of minimum band gap, the components of valence and conduction bands, the distributions of the charge densities, and the work function of the surface. Furthermore, the effects introduced by the substitution of Ti atom observed in the experiments can be well explained when the sixfold-coordinated Sn atom at the first layer is replaced by Ti atom.     

Electronic structure of the doped SnO_2

SnO2 doped with La, Ce, Sm, Zn, Ca, Al and Sb was prepared by sol-gel technique and characterized by TEM, BET, XPS and XAES. The effect of the dopants on the grain sizes of SnO2 was described and especially the effect of dopants on the distribution of the electronic state density (DESD) of Sn4d orbital was studied deeply by using X-ray-induced Auger electron spectros-copy (XAES). It was observed that the dopants could influence not only the grain sizes of SnO2 but also electronic structure of SnO2, as well as the stability of the doped SnO2 samples. The experiment results indicated that the structure and stability of SnO2 film could be improved by the chemical modification of the dopants.