Controlled growth of Zn nano-dots on a Si(111)-7x7 surface saturated with C2H5OH

Metal atoms bonded with Si adatoms on the Si(111)-(7x7) surface undergo migration by hopping adjacent Si-rest atoms with dangling bond. By saturated adsorption of Si(111)-(7x7) surface with C(2)H(5)OH, the whole Si-rest atoms and a half of Si adatoms are occupied with Si-H and Si-OC(2)H(5), so that the Zn atoms adsorbed on this surface cannot migrate by hopping. When Zn atoms were deposited on this surface, ca. 5 nm Zn dots were grown in the hexagonal spacing of ca. 5.4 nm width around the corner holes, which work as a mold. This is quite different from the growth of honeycomb layers composed of Zn(3) clusters on the clean Si(111)-(7x7) surface. The dots grow up to nine (1.97 nm) to 13 layers (2.64 nm) by keeping their size, which implies a layer-by-layer growth of dots in the mold, where the growth is controlled by the kinetics instead of energetic feasibility.     

Molecular anchor Cu-S formed on a thiophene mediated Si(111)-(7x7) surface

Thiophene molecule selectively binds to the adjacent adatom-rest atom pair on the Si(111)-(7x7) surface through its alpha-carbon atoms, leading to the covalent attachment of a C-S-C linkage and remaining C=C (beta-carbon) bond onto the surface. Photoemission studies show that Cu atom readily adsorbs onto the S atom of the functional group to form the Cu-S molecular anchor in two forms: one points away from the thiophene C=C group; the other points toward the C=C group.     

Surface chemistry of five-membered aromatic ring molecules containing two different heteroatoms on Si(111)-7 x 7

The surface chemistry of three representative aromatic molecules containing two different heteroatoms isoxazole, oxazole, and thiazole on Si(111)-7 x 7 was studied. These molecules exhibit different competition and selectivity for multiple reaction channels with this surface, determined by a combination of molecular electronic and structural factors. Isoxazole is chemically attached to Si(111)-7 x 7 through both dative-bond addition and [4 + 2]-like cycloaddition. Oxazole chemisorbs on Si(111)-7 x 7 through both dative-bond addition and [2 + 2]-like cycloaddition. The kinetically favored [2 + 2]-like cycloadduct at low temperature is thermally converted into the thermodynamically preferred [4 + 2]-like cycloadduct at a temperature higher than 300 K. Thiazole is chemically bound to this surface only through formation of a Si...N dative bond at low temperature. This dative-bonded molecule is thermally converted into a [4 + 2]-like cycloadduct. The reaction channels of the three five-membered aromatic molecules containing two different heteroatoms (isoxazole, oxazole, and thiazole) and of the aromatic molecules containing only one heteroatom (pyridine, pyrrole, furan, and thiophene) are compared and analyzed for a thorough understanding of the reaction mechanisms of various heterocyclic aromatic molecules on this surface. The intrinsic connection between surface reaction mechanism and molecular electronic structure is demonstrated. This includes the distribution of electron density on the molecular ring determined by the geometric arrangement of the heteroatoms, the electronegativity of the heteroatoms, and the electronic contribution of the heteroatoms to formation of aromatic pi conjugation, as well as the molecular polarity.     

The interfacial properties of MgCl(2) thin films grown on Si(111)7 x 7

Photoelectron spectroscopy with synchrotron radiation and low energy electron diffraction (LEED) were used in order to study the MgCl(2)Si(111) system. At submonolayer coverage of MgCl(2), a new LEED pattern was observed corresponding to a (sqr rt 3 x sqr rt 3)R30 degrees overlayer superimposed on the underlying reconstructed Si(111)7 x 7. The surface species at this stage are mainly molecular MgCl(2) and MgCl(x) (x<2) or MgO(x)Cl(y) attached to the Si substrate through Cl bridges coexisting with monodentate SiCl. The interfacial interaction becomes more pronounced when the submonolayer coverage is obtained by annealing thicker MgCl(2) layers, whereby desorption of molecular MgCl(2) is observed leaving on the nonreconstructed silicon surface an approximately 0.2 ML thick MgCl(x) layer which again forms the (sqr rt 3 x sqr rt 3 )R30 degrees superstructure.     

Selective formation of cumulative double bonds (C[double bond]C[double bond]N) in the attachment of multifunctional molecules on Si(111)-7 x 7

The cumulative double bond (C[double bond]C[double bond]N), an important intermediate in synthetic organic chemistry, was successfully prepared via the selective attachment of acrylonitrile to Si(111)-7 x 7. The covalent binding of acrylonitrile on Si(111)-7 x 7 was studied using high-resolution electron energy loss spectroscopy (HREELS), X-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS), scanning tunneling microscopy (STM) and DFT calculations. The observation of the characteristic vibrational modes and electronic structures of the C[double bond]C[double bond]N group in the surface species demonstrates the [4 + 2]-like cycloaddition occurring between the terminal C and N atoms of acrylonitrile and the neighboring adatom-rest atom pair, consistent with the prediction of DFT calculations. STM studies further show the preferential binding of acrylonitrile on the center adatom sites of faulted halves of Si(111)-7 x 7 unit cells.     

Si-C(N) sigma linkages and N --> Si dative bonding at pyridine/Si(111)-7 x 7

We experimentally demonstrated that pyridine/Si(111)-7 x 7 can act as an electron donor/acceptor pair as a result of the charge transfer from the electron-rich N atom of pyridine to the electron-deficient adatom of the Si surface, evidenced by the upshift of 1.8 eV (state A) for the N(1s) core level upon the formation of a datively bonded complex compared to physisorbed molecules. Another state (B) whose N(1s) binding energy downshifts by 1.2 eV was assigned to an adduct through Si-C and Si-N covalent linkages, formed via a [4 + 2]-like addition mechanism on Si(111)-7 x 7. Binding molecules through the formation of the dative bond resulted from significant electron transfer opens a new approach for the creation of Si-based molecular architectures and modification of semiconductor interfacial properties with unsaturated organic molecules.     

Binding of glycine and L-cysteine on Si(111)-7 x 7

The adsorption of glycine and l-cysteine on Si(111)-7 x 7 was investigated using high-resolution electron energy loss spectroscopy (HREELS) and X-ray photoelectron spectroscopy (XPS). The observation of the characteristic vibrational modes and electronic structures of NH3+ and COO- groups for physisorbed glycine (l-cysteine) demonstrates the formation of zwitterionic species in multilayers. For chemisorbed molecules, the appearance of nu(Si-H), nu(Si-O), and nu(C=Omicron) and the absence of nu(O-H) clearly indicate that glycine and l-cysteine dissociate to produce monodentate carboxylate adducts on Si(111)-7 x 7. XPS results further verified the coexistence of two chemisorption states for each amino acid, corresponding to a Si-NH-CH2-COO-Si [Si-NHCH(CH2SH)COO-Si] species with new sigma-linkages of Si-N and Si-O, and a NH2-CH2-COO-Si [NH2CH(CH2SH)COO-Si] product through the cleavage of the O-H bond, respectively. Glycine/Si(111)-7 x 7 and l-cysteine/Si(111)-7 x 7 can be viewed as model systems for further modification of Si surfaces with biological molecules.     

Dissociation of N2 on a Si(111)-7x7 Surface at Room Temperature

We demonstrate that the strong N₂ bond can be efficiently dissociated at low pressure and ambient temperature on a Si(111)-7x7 surface. The reaction was experimentally investigated by scanning tunnelling microscopy and X-ray photoemission spectroscopy. Experimental and density functional theory results suggest that relatively low thermal energy collision of N₂ with the surface can facilitate electron transfer from the Si(111)-7x7 surface to the π*-antibonding orbitals of N₂ that significantly weaken the N₂ bond. This activated N₂ triple bond dissociation on the surface leads to the formation of a Si₃N interface.     

苯在Si(111)-7*7表面化学吸附的理论研究

采用两种大小不同的原子簇模型Si_(30)H_(28)和Si_(13)H_(16),分别用两层 ONIOM方法（对较大原子簇）和普通量子化学方法（对较小原子族）考察了苯分子 在Si(111)-7 * 7表面的化学吸附。对三种可能的吸附物种分别用DFT或HF方法进行 了计算。通过大小原子簇吸附物种的吸附能以及几何构型优化参数的比较发现,对 于稳定的吸附物种,较小的原子簇基本上可以代替较大的原子簇进行计算,而对于 不太稳定的吸附物种,就不得不考虑周边原子的影响。计算结果表明苯在Si(111)- 7 * 7表面的主要吸附种是双σ成键的1,4加成产物,不稳定的单吸附物种可能是 1,4加成物种的前驱态。     

Thermal and ion-induced surface reactions of 1,1-difluoroethylene on Si(111)7 x 7 and vitreous SiO2

Thermal and ion-induced reactions of 1,1-difluoroethylene (1,1-C2H2F2 or iso-DFE) on Si(111)7 x 7 and vitreous SiO2 surfaces have been investigated by vibrational electron energy loss spectroscopy and thermal desorption spectrometry. Like ethylene, iso-DFE predominantly chemisorbs via a [2 + 2] cycloaddition mechanism onto the 7 x 7 surface as a di-sigma-bonded difluoroethane-1,2-diyl adstructure, which undergoes H abstraction and defluorination, producing hydrocarbon fragments and SiF(x) (x = 1-3) upon annealing to >700 K. Ion irradiation of Si(111)7 x 7 in iso-DFE at 50 eV impact energy appears to substantially enhance the production of hydrocarbon fragments and SiF(x)(), leading to stronger SiF4 desorption products over an extended temperature range (400-900 K). The observed SiC and SiF(x) produced on the 7 x 7 surface by ion irradiation in iso-DFE are found to be similar to those obtained by ion irradiation in the fluoromethane homologues, CF4 and CH2F2. The production of higher relative concentrations for the larger SiF(x) and C2-containing fragments is evidently favored on the 7 x 7 surface. On a vitreous SiO2 surface, ion irradiation in iso-DFE, unlike that in CF4 and CH2F2, appears to produce less SiF(x) than that on the 7 x 7 surface, which indicates that surface O does not interact strongly with the C2-containing fragments. The presence or absence of a C=C bond and the relative F-to-C ratio of the sputtering gas could therefore produce important effects on the resulting surface products obtained by low-energy ion irradiation.     

Binding mechanisms of methacrylic acid and methyl methacrylate on si(111)-7 x 7 -- effect of substitution groups

The interaction of methacrylic acid and methyl methacrylate with Si(111)-7 x 7 has been investigated using high-resolution electron energy loss spectroscopy (HREELS) and X-ray photoelectron spectroscopy (XPS). While methacrylic acid chemisorbs dissociatively through O-H bond cleavage, methyl methacrylate is covalently attached to the silicon surface via a [4+2] cycloaddition. The different reaction pathways of these two compounds on Si(111)-7 x 7 demonstrate that the substitution groups play an important role in determining the reaction channels for multifunctional molecules, leading to the desired flexibility in the organic modification of silicon surfaces.     

Studies of chemisorbed tetracene on si(111)-7x7

The chemisorption of tetracene on the Si(111)-7x7 surface was studied using scanning tunneling microscopy (STM) and density functional theory (DFT) calculations. On the basis of the STM results and dimension analysis, two types of binding configurations were proposed. One of the configurations involves the di-sigma reaction between two C atoms of an inner ring with an adatom-rest atom pair on the substrate to give rise to an unsymmetrical butterfly structure. Tetracene in another configuration possesses four C-Si bonds that are formed via di-sigma reactions between the C atoms at the terminal rings with two center adatom-rest atom pairs within one-half of the surface unit cell. Besides, two other binding modes were proposed based on the dimension compatibility between the tetracene C and the substrate Si dangling bonds even though their identifications through the STM images are nonexclusive. Structural modeling and adsorption energies calculations were carried out using the DFT method. Factors affecting the relative thermodynamic stabilities based on the calculation results and the relative populations of tetracene in the different binding configurations as observed experimentally were discussed.     

Formation of molecular templates containing cumulative double bonds (C=C=C) at organic/silicon hybrid interfaces

The cumulative double bond (C=C=C), an important intermediate in synthetic organic chemistry, was successfully prepared via the selective attachment of acetylethyne to Si(111)-7 x 7. The experimental observation of the characteristic vibrational modes and electronic structures of the C=C=C group in the surface species demonstrates the [4 + 2]-like cycloaddition occurring between the terminal O and C atoms of acetylethyne and the neighboring Si adatom-rest atom pair, consistent with the prediction of density functional theory calculations. Scanning tunneling microscopy images further reveal that the molecules selectively bind to the adjacent adatom-rest atom pairs on Si(111)-7 x 7.     

Molecular beam investigation of hydrogen dissociation on Si(001) and Si(111) surfaces

The influence of molecular vibrations on the reaction dynamics of H2 on Si(001) as well as isotopic effects have been investigated by means of optical second-harmonic generation and molecular beam techniques. Enhanced dissociation of vibrationally excited H2 on Si(001)2 x 1 has been found corresponding to a reduction of the mean adsorption barrier to 390 meV and 180 meV for nu=1 and nu=2, respectively. The adsorption dynamics of the isotopes H2 and D2 show only small differences in the accessible range of beam energies between 50 meV and 350 meV. They are traced back to different degrees of vibrational excitation and do not point to an important influence of quantum tunneling in crossing the adsorption barrier. The sticking probability of H2 on the 7 x 7-reconstructed Si(111) surface was found to be activated both by H2 kinetic energy and surface temperature in a qualitatively similar fashion as H2/Si(001)2 x 1. Quantitatively, the overall sticking probabilities of H2 on the Si(111) surface are about one order of magnitude lower than on Si(001), the influence of surface temperature is generally stronger.     

Orthogonal self-assembly of interconnected one-dimensional inorganic and organic nanostructures on the Si(100) surface

Orthogonal, interconnected inorganic and organic one-dimensional nanostructures have been fabricated by parallel self-assembly on the Si(100) surface and investigated using room temperature ultrahigh vacuum scanning tunneling microscopy. In particular, bismuth nanowires were self-assembled on the clean Si(100)-2 x 1 surface perpendicular to the Si dimer rows, followed by hydrogen passivation of the surrounding Si surface. Styrene molecular chains were then self-assembled on the H-passivated Si(100)-2 x 1 surface to intersect perpendicularly with the Bi nanowires. This general approach can likely be applied to the wide range of inorganic and organic species that spontaneously form one-dimensional nanostructures on the Si(100) surface.     

Nucleation and growth of Ge nanoclusters on the Si(111)‐(7 × 7) surface studied by scanning tunneling microscopy

Nucleation and growth of two‐dimensional Ge nanoclusters on the Si(111)‐(7 × 7) surface at elevated substrate temperatures have been studied using scanning tunneling microscopy. The uniformity of the Ge nanoclusters is improved with the increase of substrate temperature, and ordered Ge nanoclusters are formed on the faulted and unfaulted halves of (7 × 7) unit cell at substrate temperature of 200 °C. It is proposed that the Ge nanoclusters consist of six Ge atoms with three on top of the center adatoms and others on the rest atoms within one half of a unit cell. Copyright © 2014 John Wiley & Sons, Ltd.     

Electron correlation effects at semiconductor surfaces and interfaces: Si(111)-5x5, Si(111)-7x7 and Sn/Ge(111)

Electron correlation effects associated with the dangling bond surface states of Si(111)-5×5, Si(111)-7×7 and Sn/Ge(111)-3×3 are analyzed. In all the cases, extensive LDA-calculations are performed and effective two-dimensional Hamiltonians are deduced. Our analysis of these Hamiltonians shows that: (a) the Si(111)-5×5 surface states exhibits a metal-insulator transition; (b) the Si(111)-7×7 surface shows important similarities with the Si(111)-5×5 case, but it has a dangling bond surface band having a metallic character; (c) finally, the Sn/Ge(111)-3×3 dangling bond surface bands also shows important correlation effects that are found, however, not to affect the metallic character of the surface bands.     

Controlled fabrication of 1D molecular lines across the dimer rows on the Si(100)-(2 x 1)-H surface through the radical chain reaction

Current interest in the fabrication of organic nanostructures on silicon surface is focused on the self-directed growth of 1D molecular lines with predefined position, structure, composition, and the length on the H-terminated Si(100)-(2 x 1) surface. To date, no studies have succeeded in growing the molecular line across the dimer rows on Si(100)-(2 x 1)-H, which is highly desirable. Using scanning tunneling microscopy (STM), we studied a new molecular system (allyl mercaptan, CH2=CH-CH2-SH) that undergoes chain reaction across the dimer row on the Si(100)-(2 x 1)-H surface at 300 K and produces covalently bonded 1D molecular lines. In combination with the previous findings of chain reaction along the rows, the present observations of self-directed growth of 1D molecular lines across the dimer rows on the Si(100)-(2 x 1)-H surface provide a means to connect any two points (through molecular lines) on a 2D surface.     

Secondary oxidation product on Si(111)-(7 x 7) characterized by isotope-labeled vibrational spectroscopy

The reaction of O(2) with Si(111)-(7 x 7) has been studied by electron energy-loss spectroscopy at 82 K. In addition to the losses due to Si-O-Si configurations, we observed two Si-O stretch modes depending on the coverage. A 146-meV peak appears at the initial reaction stage and was ascribed to a metastable product with one oxygen atom bonding on top of Si adatom and the other inserted into the backbond. The initial product is further oxidized to produce the second Si-O stretch peak at 150 meV. The secondary product was partially substituted with isotopes and analyzed with a simple model of coupled oscillators. The vibrational spectra reflect dynamical couplings between the isotopes, which is consistent with those predicted from the tetrahedral SiO(4) structure with one on top and three inserted oxygen atoms.     

Low-temperature STM images of methyl-terminated Si(111) surfaces

Low-temperature scanning tunneling microscopy (STM) has been used to image CH(3)-terminated Si(111) surfaces that were prepared through a chlorination/alkylation procedure. The STM data revealed a well-ordered structure commensurate with the atop sites of an unreconstructed 1 x 1 overlayer on the silicon (111) surface. Images collected at 4.7 K revealed bright spots, separated by 0.18 +/- 0.01 nm, which are assigned to adjacent H atoms on the same methyl group. The C-H bonds in each methyl group were observed to be rotated by 7 +/- 3 degrees away from the center of an adjacent methyl group and toward an underlying Si atom. Hence, the predominant interaction that determines the surface structure arises from repulsions between hydrogen atoms on neighboring methyl groups, and secondary interactions unique to the surface are also evident.