石墨相氮化碳的液相合成及光催化性能研究进展

石墨相氮化碳是类石墨层状聚合物材料,因其特殊的能带和电子结构,近年来成为功能材料研究领域的热点.液相合成法具有温和多变的特性,是石墨相氮化碳合成的重要途径.本文作者就现阶段液相介质合成氮化碳的主要方法进行了介绍,主要包括液相电沉积、脉冲激光烧蚀、溶剂热合成法等.介绍了不同液相介质和合成参数对制备氮化碳材料晶型、形貌等的影响.同时就溶剂热合成氮化碳在光催化领域的研究进展进行了总结.在未来的研究中,液相合成法将极大的丰富氮化碳材料结构优化的途径,有助于推动多功能聚合物材料的深入研究.     

脉冲激光沉积纳米NiO薄膜

Na Cl型 Ni O是一种 p型半导体 ,广泛用于传感器、催化剂、涂料、磁性材料及电极材料等领域[1～ 5] .最近 ,Poizot等 [6] 又报道了 Ni O可作为锂离子电池的阳极材料 ,使 Ni O成为又一新的研究热点 .纳米 Ni O粉末的制备方法有多种 ,主要包括化学沉淀法和沉淀转换法 ,Ni O薄膜的制备主要采用磁控溅射、化学气相沉积和电沉积等方法 [7～ 12 ] .脉冲激光沉积法具有操作简单和成膜纯净等优点 ,因此是制备薄膜的重要方法之一 .本文采用脉冲激光沉积 (PLD)法在氧气氛中使用金属镍作为靶材料 ,不锈钢作为基片 ,对 Ni O薄膜的制备进行了研究…     

光致变色WO3/4,4'-BPPOBp超晶格薄膜的制备

具有光致变色和电致变色特性的三氧化钨薄膜因其巨大的应用前景而倍受人们关注[1-4].其制备方法一般为物理沉积方法和化学沉积方法等.其中化学方法包括喷射裂解法[5],化学气相沉积法[6,7],电化学沉积法[8]和溶胶凝胶法[9]等.利用超分子化学自组装技术构建用有机组分调控的光致变色纳米超晶格薄膜材料,是研制光致变色功能薄膜材料的新方法.本文采用溶液中相反电荷聚电解质超分子自组装的方法(ＰＥｓ法)[10],制备了ＷＯ3/4,4′ＢＰＰＯＢｐ超晶格薄膜.采用紫外可见吸收光谱和小角Ｘ射线衍射谱对薄膜的结构和分子的排列方式进行了研究.1　实验…     

热处理对SILAR法制备CuInSe_2薄膜性能的影响

0引言铜铟硒(CIS)具有合适的带隙、高光吸收系数、适当的电荷密度和迁移率,是一种用于薄膜太阳能电池的备受关注的吸收材料[1]。目前CuInSe2薄膜已采用多种方法进行制备,如金属前驱体硒化法[2]、共沉积法[3]、溅射法[4]、电沉积法[5]和化学气相沉积法[6]等。这些方法都有各自的     

非晶氮化铁薄膜的生长机制传统动力学生长标度方法的适用性

采用动力学标度方法研究了磁控溅射沉积的非晶氮化铁薄膜的动力学生长机制, 结果表明, 具有连续类柱状岛形貌的非晶氮化铁薄膜具有标度不变的自仿射分形特点, 其粗糙度指数α=0.82±0.21, 生长指数β=0.44±0.07, 动力学标度指数1/z=0.54±0.07. 薄膜生长符合提出的热重新发射生长模型.     

AIN粉末合成新方法研究

氮化铝(AlN)是一种性能优异的工程材料.目前,AlN粉末的合成方法虽有多种,但真正能用于工业生产的只有铝粉直接氮化法和碳热还原法.其它方法如化学气相沉积法、裂解法和等离子化学法因生产成本非常昂贵,只能用于实验研究.即使是目前工业上常用的那两种方法,其本身也存在不少缺点.如铝粉直接氮化法反应时间较长,对工艺条件比较敏感,稍控制不当,铝即发生熔融,容易造成自烧结和产品质量不稳定.碳热还原法反应温度较高,而且需要二次除碳工艺,生产成本较高[1,2].因此,探索AlN粉末合成的新方法是很有必要的.     

催化超滑:金催化作用下非晶含氢碳薄膜的工程超滑

摩擦磨损是导致机械系统高能耗和失效的主要原因,降低摩擦系数、减小磨损,特别是实现超滑(超低摩擦,μ0.01)是解决上述困窘的有效方法.本文针对在工程尺度难以实现超滑应用的技术壁垒,将催化与摩擦学相结合,提出了金催化非晶含氢碳薄膜原位生成石墨烯纳米带实现工程超滑的新方法,即"催化超滑".本文采用等离子体化学气相沉积法(PECVD)和化学溶液镀膜法分别制备了所需非晶含氢碳薄膜和镀金钢球,以非晶含氢碳薄膜/镀金钢球构成滑动摩擦副,并进一步研究了其摩擦学行为.结果表明,与非晶含氢碳薄膜/轴承钢球摩擦副相比,含氢碳薄膜/镀金钢球摩擦副摩擦系数低至0.008,仅是含氢碳薄膜/轴承钢球摩擦副的25%左右;磨损深度仅为含氢碳薄膜/轴承钢球摩擦副的31%左右.这是因为摩擦过程中金在摩擦热和剪切力的作用下,原位催化诱导非晶碳发生向石墨烯的转变,石墨烯有序的结构利于形成非公度接触,可有效减小界面剪切力从而降低摩擦系数."催化超滑"的新方法在宏观尺度上实现了超滑,为解决超滑工程应用难的问题提供了新的思路.     

利用具有核壳结构的SiO2@PPy粒子制备SiC空心球

碳化硅(SiC)材料具有耐高温、 耐酸碱腐蚀和高机械强度等优异性能, 因此, 许多研究者都致力于制备优良的SiC材料以取代传统材料用作苛刻条件下催化剂的载体材料[1～4]. 研究结果表明, 具有高比表面积和空心核结构的载体材料可以负载更多的异质催化剂, 从而提高催化剂的催化性能. 因此, 制备同时具有高比表面积和空心核结构的SiC材料具有重要的应用价值. 传统的碳热还原反应、 自蔓延高温合成、 聚合物热分解等方法都不适合制备具有独特结构形貌的SiC材料[5～8]. 近年来, Ledoux等[1～4, 9]采用形状记忆合成(Shape memory synthesis)方法将不同形貌的固相碳材料与气相SiO蒸气反应, 成功地制备了不同形状的SiC材料, 比表面积在20～100 m2/g之间. Vix-Guterl等[10- 11]采用反应复制技术(Reactive replica technique)从C/SiO2材料制备了微米级的管状SiC材料. 另外, Tang等[12]采用水热合成法得到了纳米级的SiC空心球, 但产率不高. 本文利用具有核壳结构的SiO2@PPy粒子在1 300 ℃进行碳热还原反应, 成功制备同时具有较高比表面积和空心核结构的SiC空心球材料.     

低熔点晶体叠氮二乙基铝的合成和证明

叠氮二乙基铝（DEAA)是叠氮有机铝化合物中比较重要的一个化合物,但对DEAA的合成报道很少,还没有分离出纯的DEAA的报道。对它的研究有着重要的理论意义和应用价值。DEAA用作叠氮化试剂可用于多种叠氮化反应^[1-3];作为MOCVD前体物,由DEAA可制得性能优良的纳米级AIN材料,如AIN微晶薄膜^[4-6]和AIN粉末材料;DEAA是高含能材料,在国防和空间技术领域有着潜在的应用前景。文献报道的DEAA的合成方法按原料可分为三种^[7-10],其中以叠氮化钠和氯化二乙基铝（DEAC）为原料的合成方法应用较广,得到的DEAA为无色透明液体,熔点为－130℃^[11]。但笔者曾和到过固体DEAA^[12]。因此,本文将主要就DEAA的形态问题展开研究。     

高温氮化热聚合法制备氮化碳框架材料用于可见光光催化反应

石墨相氮化碳是一种聚合物半导体材料(带隙宽度约为2.7 eV),具有独特的和可调控的光学和电子性质,能够作为半导体光催化剂用于驱动一系列光催化反应,在能源和环境领域具有潜在应用前景.利用简单的热聚合法,在空气或氮气中高温焙烧(500？700 oC)富氮前驱体可以合成氮化碳聚合物.通常,这些富氮前驱物含有三嗪单元(如三聚氰胺和三聚硫氰酸原料)或在热聚合过程中会生成三嗪单元(如氰胺和二聚氰胺原料).由于热聚合反应过程受到反应动力学限制,氮化碳半导体材料的聚合度和结晶度不高,且比表面积较小,使其在光催化反应过程中存在传质作用差、激子结合能高和光生载流子复合严重等问题,不利于光催化反应进行.本课题组发展了氮化碳光催化剂的合成新方法(高温氮化),该方法抑制了热聚合过程中三嗪中间体的快速分解,促进了氮化碳的聚合.我们将所制备的催化剂用于光催化分解水产氢反应,发现高温氮热反应制备的氮化碳样品(CNC)的催化性能显著优于传统氮化碳.傅立叶红外光谱(FT-IR)、X射线光电子能谱(XPS)和13C固体核磁共振谱(13C NMR)的表征结果表明, CNC光催化剂具有与传统氮化碳类似的化学结构和组成(七嗪基本结构单元).然而,对于高温氮化热聚合方法制备得到的七嗪基氮化碳聚合物光催化性能增强的原因并不清楚.基于此,本文采用X射线粉末衍射(XRD)、场发射透射电镜(FE-TEM)、原子力显微镜(AFM)和比表面积(BET)测试等手段研究了不同制备方法得到的氮化碳基光催化剂在可见光光催化分解水产氢反应中催化性能差异的原因. XRD结果表明, CNC系列样品的XRD谱与体相氮化碳相似,具有石墨相氮化碳特征的层间堆积(002)衍射峰和面内重复单元(100)衍射峰.与传统石墨相氮化碳相比, CNC在27o附近的衍射峰发生明显偏移.其(002)晶面衍射峰从27.5o增大到27.8o,使(002)晶面间距从0.325 nm减小到0.322 nm.进一步观察发现, CNC系列样品与体相氮化碳相比,其衍射峰出现明显窄化,且衍射强度增加,表明由高温氮化热聚合法制得的产物具有更好的结晶度.通常,半导体晶体结构缺陷会阻碍光生载流子的快速迁移和分离,提高氮化碳聚合物的结晶度可有效改善其光催化氧化还原反应. TEM结果表明,传统石墨相氮化碳是由大块的(厚重的)片层堆积形成,而高温氮化合成的CNC-3则是由纳米薄片组成,这种形貌差异可能是因为活性前驱体(氨气和三聚氰氯)的使用改善了反应动力学过程.另外, CNC-3纳米片上有一些地方发生卷曲,这种卷曲能够有效减小纳米片表面张力,降低其表面能,使纳米片结构稳定存在,类似于石墨烯中的碳卷曲行为. CNC-3的AFM结果进一步证实形成了纳米片结构,其厚度均匀,约为3–6 nm.我们构筑的这种纳米薄片结构具有高度敞开的平面结构,有利于光生电子-空穴从体相迁移到表面,可有效提高半导体的光催化性能. BET结果表明, CNC系列样品的比表面积均比传统g-C3N4的比表面积大,且随焙烧温度升高而增大. CNC光催化剂增大的比表面积改善了多相光催化反应的传质扩散过程,增加了表面反应活性位,有利于提高氮化碳聚合物的光催化活性.     

Nickel(II) complexes of N-(dialkylcarbamothioyl)-4-nitrobenzamide as single-source precursors for the deposition of nanostructured nickel sulfide thin films by chemical vapor deposition

Nickel(II) complexes of N-(di-alkyl-carbamothioyl)-4-nitrobenzamide (alkyl?=?ethyl or n-propyl) have been synthesized and characterized by infrared spectroscopy, elemental analysis, nuclear magnetic resonance spectroscopy, and mass spectrometry. The structures of bis[N-(diethylcarbamothioyl)-4-nitrobenzamide]nickel(II) (2a) and bis[N-(dipropylcarbamothioyl)-4-nitrobenzamide]nickel(II) (2b) have been determined by X-ray crystallography. FTIR and NMR of the nickel complexes showed the absence of the N–H proton resonance and the N–H stretch and shift of ν _C=O and ν _C=S as expected. Both complexes have been used as single-source precursors for the deposition of nickel sulfide nanostructured thin films by aerosol-assisted chemical vapor deposition. The nanostructured thin films were characterized by X-ray powder diffraction, scanning electron microscopy, energy dispersive X-ray analysis, and atomic force microscopy.     

Deposition of Silicon Carbide Thin Films from 1,1-Dimethyl-1-Silacyclobutane

1,1-Dimethyl-1-silacyclobutane was used as a single-source precursor to deposit SiC thin films on Si(100) and Si(111) by low-pressure chemical vapor deposition (LPCVD). Polycrystalline β-SiC thin films were grown at temperatures 1100 and 1200°C. At temperatures between 950 and 1100°C, amorphous thin films of silicon carbide were obtained. The films were studied by X-ray diffraction (XRD), infrared spectroscopy (IR), scanning electron microscopy (SEM), scanning transmission electron microscopy (STEM), and electron diffraction (ED).     

Synthesis, characterization and application of Ni(tta)2.tmeda to MOCVD of nickel oxide thin films

A novel nickel beta-diketonate adduct, Ni(tta)2.tmeda, has been synthesized using 2-thenoyltrifluoroacetone as the beta-diketonate and N,N,N,'N'-tetramethylethylendiamine as the Lewis base. It has been characterized by elemental analyses, IR, 1H NMR, 13C NMR spectroscopy and single-crystal X-ray diffraction studies. Physical and thermal properties of Ni(tta)2.tmeda precursor have been also extensively investigated. Its efficacy as a metal-organic chemical vapour deposition (MOCVD) precursor for the growth of nickel oxide films has been fully tested by applying it to the deposition of NiO films on quartz substrate. NiO thin films have been characterized by X-ray diffraction (XRD), scanning electron microscopy and UV spectroscopy.     

衬底温度对Fe3N薄膜生长和磁性的影响

采用直流磁控溅射方法, 以Si(100) 单晶片为衬底, 在衬底温度为150～450 ℃的范围内得到了ε-Fe3N薄膜样品. 利用 XRD, SEM和VSM等表征手段, 研究了衬底温度对ε-Fe3N薄膜的生长和磁性的影响. 实验结果表明, 随着衬底温度的升高, 薄膜的生长速率、晶粒尺寸和单位质量磁化强度均增大, 而矫顽力呈现先增加后减小的变化趋势, 当衬底温度为350 ℃时, 矫顽力达到最大值18.72 kA/m, 可以认为此时薄膜样品的晶粒尺寸接近于交换作用长度.     

Chemical interactions in the layered system BC x N y /Ni(Cu)/Si, produced by CVD at high temperature

Layered samples Si(100)/C/Ni/BC(x)N(y) and Si(100)/C/Cu/BC(x)N(y) were produced by physical vapor deposition of a metal (Ni, Cu, resp.) and low-pressure chemical vapor deposition of the boron carbonitride on a Si(100) substrate. Between the Si and the Ni (Cu) and on the surface of the Ni (Cu) layer, thin carbon layers were deposited, as a diffusion barrier or as a protection against oxidation, respectively. Afterwards, the surface carbon layer was removed. As precursor, trimethylamine borane and, as an auxiliary gas, H(2) and NH(3) were used, respectively. The chemical compositions of the layers and of the interfaces in between were characterized by total-reflection X-ray fluorescence spectrometry combined with near-edge X-ray absorption fine-structure spectroscopy, X-ray photoelectron spectroscopy, and secondary ion mass spectrometry. The application of H(2) yielded the BC(x)N(y) compound whereas the use of NH(3) led to a mixture of h-BN and graphitic carbon. At the BC(x)N(y)/metal interface, metal borides could be identified. At the relatively high synthesis temperature of 700 °C, broad regions of Cu or Ni and Si were observed between the metal layer and the substrate Si.     

The diffusion of Pt in BST films on Pt/Ti/SiO2/Si substrate by sol-gel method

Barium strontium titanate (Ba_0.65Sr_0.35TiO₃) ferroelectric thin films have been prepared by sol-gel method on Pt/Ti/SiO₂/Si substrate. The X-ray diffraction (XRD) pattern indicated that the films were a polycrystalline perovskite structure and the atomic force microscope (AFM) image showed that the crystallite size and the root mean square roughness (RMS) were 90 nm and 3.6 nm, respectively. The X-ray photoelectron spectrum (XPS) images showed that Pt consisting in BST thin films was the metallic state, and the Auger electron spectroscopy (AES) analysed the Pt concentration in different depth profiles of BST thin films. The result displayed that the Pt diffusion in BST thin film is divided into two regions: near the BST/Pt interface, the diffusion type was volume diffusion, and far from the interface correspondingly, the diffusion type became grain boundary diffusion. In this paper, the previous researcher’s result was used to verify our conclusion.     

CO-sensing properties of undoped and doped tin oxide thin films prepared by electron beam evaporation

Undoped thin films of tin oxide and those doped with indium oxide and nickel oxides were deposited by electron beam evaporation. The effects of the film thickness and preparation conditions (films prepared with or without the presence of oxygen environment during deposition) on the optical and carbon monoxide sensing properties of the films were studied. The films were characterized using X-ray diffraction and X-ray photoelectron spectroscopy and optical spectroscopy techniques. All the films were found to be amorphous. It was found that the sensitivity of the films to CO increased with the thickness and the porosity of the films. It was found that their selectivity to CO gas relative to CO₂ and SO₂ gases could be improved upon doping the films with indium (or nickel) oxide.     

Preparation of nitrogen doped zinc oxide nanoparticles and thin films by colloidal route and low temperature nitridation process

Nitrogen doped zinc oxide (ZnO) nanoparticles have been synthesized using a colloidal route and low temperature nitridation process. Based on these results, 200 nm thick transparent ZnO thin films have been prepared by dip-coating on SiO₂ substrate from a ZnO colloidal solution. Zinc peroxide (ZnO₂) thin film was then obtained after the chemical conversion of a ZnO colloidal thin film by H₂O₂ solution. Finally, a nitrogen doped ZnO nanocrystalline thin film (ZnO:N) was obtained by ammonolysis at 250 °C. All the films have been characterized by scanning electron microscopy, X-ray diffraction, X-Ray photoelectron spectroscopy and UV–Visible transmittance spectroscopy.     

Deposition of Diamond-like Carbon Films using Graphite Sputtering in Neon Dense Plasma

This paper reports the deposition of diamond-like carbon (DLC) films on Si <100>, using a low energy (1.45 kJ) dense plasma focus assisted sputtering of graphite insert at the tip of the tapered anode. The substrates are placed in front of the anode at different axial and angular positions and are exposed to multiple focus shots. The information regarding the DLC structure is acquired by using Raman spectroscopy. The spectra are characterized by two broad bands known as “G-band” and “D-band”. The results point towards the formation of DLC films with both sp³ (diamond like) and sp² (graphite like) domains. In X-ray diffraction (XRD) pattern, no additional peak is observed except a peak at 2θ = 69° which corresponds to the silicon (Si) substrate. The intensity of Si peak is reduced after treatment indicating the deposition of amorphous carbon. Scanning electron microscopy (SEM) results demonstrate that the smoothness of the film increases with increasing the substrate angular positions with respect to the anode axis. Energy dispersive X-ray (EDX) analysis reveals that the films deposited at lower axial and angular positions are thicker which is complemented by the cross-sectional views of the films.     

Effect of substrate temperature on morphology and electrochemical performance of radio frequency magnetron sputtered lithium nickel vanadate films used as negative electrodes for lithium microbatteries

Lithium nickel vanadate thin films were prepared by radio frequency magnetron sputtering at various substrate temperatures (Ts). These thin films have been investigated as anode electrode material in the use of microbatteries. Films were characterized by Rutherford backscattering spectroscopy, nuclear reaction analysis, Auger electron spectroscopy, glancing-incidence X-ray diffraction analysis, Raman spectroscopy, scanning electron microscopy, atomic force microscopy, and high-resolution transmission electron microscopy techniques. The anodic electrochemical performances of the films have been evaluated by cyclic voltammetry at a scan rate of 1 mV/s and by galvanostatic cycling, with lithium metal as the counter and the reference electrode, and cycled in the range of 0.02-3.0 V at a current density of 75 microA/cm2. Thin films prepared at a Ts of 650 degrees C show a discharge capacity at the 20th cycle of 1100 (+/-10) mAh/g, which exhibited excellent capacity retention with a small capacity fade.